Abstract: A design structure for a static random access memory (SRAM) circuit includes first SRAM cell and a second SRAM cell that are configured to operate in a shared mode and/or an independent mode. In one example, a shared mode includes the sharing of a memory node of a first SRAM cell. In another example, an independent mode includes isolating a first SRAM cell from a second SRAM cell such that they operate independently.

Abstract: A method, system, and computer program for using an array of networked 3D voltage regulation modules (VRMs) to optimize power usage by components on a voltage island in real time is presented. The networked VRM devices work in parallel to supply adequate power to connected voltage islands, and to supplement other VRMs in the system that may require additional power in the case of a critical event.

Abstract: An SOI integrated circuit includes ESD protection on an SOI chip. A first power domain and a second power domain are provided in the SOI chip. In one embodiment, a charge modulation network in the SOI chip between the first power domain and the second power domain mitigates accumulation of electrical charge in an electrically isolated region of the SOI chip. In another embodiment, an ESD protection device in the SOI chip electrically connects the first power domain and the second power domain via a low metal layer to provide a discharge path for accumulated charge.

Abstract: The invention includes a design structure embodied in a computer readable medium for performing a method for inserting a scan chain into a VLSI circuit design. The scan chain structure, or structures, are included in the design structure for the VLSI circuit design. The scan chain structure includes a first flip-flop (L1) and a second flip-flop (L2) configured to operate the first flip-flop (L1) in normal mode operation, in scan mode operation, in initialization mode and in low leakage power mode operation. A buffer circuit is electrically connected between the scan-out output of the second flip-flop (L2) and the scan-in input of the first flip-flop (L1) for the next latch in the scan chain. Buffer circuit control elements control the first flip-flop (L1) to switch between scan mode or low power leakage mode. The switching occurs in only one clock cycle.

Abstract: A design structure for a static random access memory (SRAM) circuit includes first SRAM cell and a second SRAM cell that are configured to operate in a shared mode and/or an independent mode. In one example, a shared mode includes the sharing of a memory node of a first SRAM cell. In another example, an independent mode includes isolating a first SRAM cell from a second SRAM cell such that they operate independently.

Abstract: A design structure for a circuit for inline testing of memory devices which provides information on the variation of the threshold voltage. The design structure for the circuit includes an array of ring oscillators with a series of inverters, which already exist in the memory device. A control logic systematically steps through all of the ring oscillators by enabling each inverter and toggling the input. The mean frequency and its distribution is measured and recorded in an output circuit. The threshold voltage variation in the memory device is deduced from the ring oscillators. The circuit additionally includes two inverters place external of the memory device. Each ring oscillator is coupled to an inverter. The inverter preconditions the elements of the ring oscillator to prevent a resistive divider between the two transistors.

Abstract: An integrated circuit includes a plurality of processor cores and a readable non-volatile memory that stores information expressive of at least one operating characteristic for each of the plurality of processor cores. Also disclosed is a method to operate a data processing system, where the method includes providing a multicore processor that contains a plurality of processor cores and a readable non-volatile memory that stores information, determined during a testing operation, that is indicative of at least a maximum operating frequency for each of the plurality of processor cores. The method further includes operating a scheduler coupled to an operating system and to the multicore processor, where the scheduler is operated to be responsive at least in part to information read from the memory to schedule the execution of threads to individual ones of the processor cores for a more optimal usage of energy.

Abstract: A static random access memory (SRAM) circuit includes first SRAM cell and a second SRAM cell that are configured to operate in a shared mode and/or an independent mode. In one example, a shared mode includes the sharing of a memory node of a first SRAM cell. In another example, an independent mode includes isolating a first SRAM cell from a second SRAM cell such that they operate independently.

Abstract: The invention includes an error correcting logic system that allows critical circuits to be hardened with only one redundant unit and without loss of circuit performance. The system provides an interconnecting gate that suppresses a fault in one of at least two redundant dynamic logic gates that feed to the interconnecting gate. The system is applicable to dynamic or static logic systems. The system prevents propagation of a fault, and addresses not only soft errors, but noise-induced errors. Also, there is provided a design structure embodied in a machine readable medium used in a design process, and which includes such error correcting logic system.

Abstract: The invention includes an error correcting logic system that allows critical circuits to be hardened with only one redundant unit and without loss of circuit performance. The system provides an interconnecting gate that suppresses a fault in one of at least two redundant dynamic logic gates that feed to the interconnecting gate. The system is applicable to dynamic or static logic systems. The system prevents propagation of a fault, and addresses not only soft errors, but noise-induced errors.

Abstract: A static random access memory (SRAM) circuit includes first SRAM cell and a second SRAM cell that are configured to operate in a shared mode and/or an independent mode. In one example, a shared mode includes the sharing of a memory node of a first SRAM cell. In another example, an independent mode includes isolating a first SRAM cell from a second SRAM cell such that they operate independently.

Abstract: The invention includes a novel scan chain structure for LSSD or GSD IC operation. The scan chain structure includes a first flip-flop (L1) and a second flip-flop (L2) configured to operate the first flip-flop (L1) in normal mode operation, in scan mode operation, in initialization mode and in low leakage power mode operation, wherein each flip-flop within a long scan chain of latches includes a data input, data output, a clock input, a scan-in input and a scan-out output, arranged for normal mode operation. A buffer circuit is electrically connected between the scan-out output of the second flip-flop (L2) and the scan-in input of the first flip-flop (L1) for the next latch in the scan chain, the buffer circuit including a control element that controls the operation the first flip-flop (L1) to scan mode or low power leakage mode. The first flip-flop (L1) is set to a data output value upon exit from low power leakage mode that is the same value that it is set to at initialization during normal mode operation.

Abstract: A computer system for designing a low leakage monotonic CMOS logic circuit. The system performing the computer implements steps of: (a) specifying a reference PFET having its threshold voltage and its gate dielectric thickness and a reference NFET having its threshold voltage and its gate dielectric thickness; (b) synthesizing a schematic circuit design with standard design elements, the standard design elements including one or more reference PFETS and one or more reference NFETs; (c) analyzing one or more circuits for logic stages having predominantly high input logic states or predominantly low input logic states; (d) selecting one or more logic stages determined to have predominantly high input logic states or predominantly low input logic states; and (e) replacing the standard design elements of the selected logic stages with reduced current leakage elements.

Abstract: A method, system and computer program product for estimating a static power consumption of an integrated circuit are disclosed. The static power consumption of a cell of the integrated circuit is characterized based on contributions of an input node(s) and an output node(s) of the cell. A contribution considers a leakage weight and a leakage probability of a node. A logic template of the cell may be created to better represent a contribution of an internal node to the static power consumption of the cell.

Abstract: A low leakage monotonic CMOS logic circuit and a method, a method of design and a system for designing such circuits. The circuit, including: one or more logic stages, at least one of the logic stages having a predominantly high input state or having a predominantly low input state; wherein the logic stages having the predominantly high input state, comprise one or more thin gate dielectric and high threshold voltage PFETs with respect to a reference PFET and one or more thick gate dielectric and low threshold voltage NFETs with respect to a reference NFET; and wherein the logic stages having the predominantly low input state, comprise one or more thick gate dielectric and low threshold voltage PFETs with respect to the reference PFET and one or more thin gate dielectric and high threshold voltage NFETs with respect to the reference NFET.

Abstract: A circuit for inline testing of memory devices which provides information on the variation of the threshold voltage. The circuit includes an array of ring oscillators with a series of inverters, which already exist in the memory device. A control logic systematically steps through all of the ring oscillators by enabling each inverter and toggling the input. The mean frequency and its distribution is measured and recorded in an output circuit. The threshold voltage variation in the memory device is deduced from the ring oscillators. The circuit additionally includes two inverters place external of the memory device. Each ring oscillator is coupled to an inverter. The inverter preconditions the elements of the ring oscillator to prevent a resistive divider between the two transistors.

Abstract: The invention includes an error correcting logic system that allows critical circuits to be hardened with only one redundant unit and without loss of circuit performance. The system provides an interconnecting gate that suppresses a fault in one of at least two redundant dynamic logic gates that feed to the interconnecting gate. The system is applicable to dynamic or static logic systems. The system prevents propagation of a fault, and addresses not only soft errors, but noise-induced errors.

Abstract: A static random access memory (SRAM) circuit includes first SRAM cell and a second SRAM cell that are configured to operate in a shared mode and/or an independent mode. In one example, a shared mode includes the sharing of a memory node of a first SRAM cell. In another example, an independent mode includes isolating a first SRAM cell from a second SRAM cell such that they operate independently.

Abstract: A circuit for inline testing of memory devices which provides information on the variation of the threshold voltage. The circuit includes an array of ring oscillators with a series of inverters, which already exist in the memory device. A control logic systematically steps through all of the ring oscillators by enabling each inverter and toggling the input. The mean frequency and its distribution is measured and recorded in an output circuit. The threshold voltage variation in the memory device is deduced from the ring oscillators. The circuit additionally includes two inverters place external of the memory device. Each ring oscillator is coupled to an inverter. The inverter preconditions the elements of the ring oscillator to prevent a resistive divider between the two transistors.

Abstract: The present invention provides a 6T-SRAM semiconducting structure including a substrate having an SOI region and a bulk-Si region, wherein the SOI region and the bulk-Si region have a same or differing crystallographic orientation; an isolation region separating the SOI region from the bulk-Si region; and at least one first device located in the SOI region and at least one second device located in the bulk-Si region. The SOI region has an silicon layer atop an insulating layer. The bulk-Si region further comprises a well region underlying the second device and a contact to the well region, wherein the contact stabilizes floating body effects. The well contact is also used to control the threshold voltages of the FETs in the bulk-Si region to optimized the power and performance of the SRAM cell built from the combination of the SOI and bulk-Si region FETs.