Abstract: A differential logic circuit (20, 120, 220, 320, 420 and 520) designed to ensure stability of the output of the circuit. The logic circuit includes a differential load structure (22, 122, 222, 322, 422) that is connected to evaluate transistors (50, 52, 54, 56). In several embodiments, the outputs of the load transistors (30, 32) in the differential load structure are connected to the bodies of the evaluate transistors. In the other embodiments, the outputs of the load transistors in the differential structure are connected to one of the gates of a double-gated evaluate transistors. Level-shifting output buffers (160, 178) are used in connection with the embodiments of the invention that do not include double-gated evaluate transistors.

Abstract: A circuit includes a resistance-capacitance (RC) structure connected to a first set of transistors and a second set of transistors that perform the same logical function as the first set of transistors. The first set of transistors have thinner gate oxides than the second set of transistors. The RC structure drains an electric field from the first set of transistors, such that the first set of transistors are on only during initial transistor switching. In other words, the RC structure turns off the first set of transistors after transistor switching is completed. Also, the first set of transistors and the second set of transistors share common inputs and outputs. The first set of transistors exhibit higher tunneling currents than the second set of transistors. The thinner gate oxides of the first set of transistors cause the first set of transistors to exhibit higher device currents than the second set of transistors.

Abstract: Disclosed is an integrated circuit device, comprising: a first power rail for supplying power to first latch and a circuit during a first clock phase; a second power rail for supplying power to a second latch during a second clock phase; and the circuit coupled between an output of the first latch and an input of the second latch.

Abstract: A design and burn-in technique that effectively reduces power consumption during burn-in for devices with high power consumption as a result of shrinking voltages, high instantaneous current, subthreshold leakage and high currents at stress conditions. Three methods of reducing power consumption during burn-in are disclosed in detail: (1) completely separate power grids, (2) isolated grids during burn-in, and (3) isolated grids for MTCMOS used during burn-in. Each technique provides a method of segmenting the power supply of a chip and controlling which segment of the chip is stressed based on which segment is ‘powered on’. Those segments not being stressed are ‘shutoff’ so as to reduce power consumption.

Abstract: A multigated FET having reduced diffusion capacitance, self-compensating effective channel length, improved short channel effects control, and enhanced density. Forming the FET by providing a plurality of separated insulated gates on a substrate, including forming insulating material on at least four surfaces of each of the gates, forming a dielectric layer on the substrate between the insulated gates, depositing and planarizing a layer of conductive material on and between the insulated gates down to the insulating material on the top surface of the insulated gates, and implanting diffusion regions into the substrate, adjacent to and beneath a portion of two distal ones of the plurality of insulated gates.

Abstract: A circuit for maintaining the threshold voltages of transistors implemented in a dynamic CMOS circuit. A plurality of transistors have source drain connections connected between the body contacts of transistors in the dynamic CMOS circuits, and the constant voltage potential. When operating the dynamic CMOS circuit in the precharge phase, the body of each of the CMOS circuit transistors is maintained at the constant voltage potential. During the evaluate phase, the body potential is permitted to float to its precharge state. The initial reference level voltage established during a precharge phase maintains the transistor gate-source threshold voltage at a constant value, eliminating both bipolar effects and history effects which accompanying a changing body potential.

Abstract: A method of forming a silicon on insulator (SOI) body contact at a pair of field effect transistors (FETs), a sense amplifier including a balanced pair of such FETs and a RAM including the sense amplifiers. A pair of gates are formed on a SOI silicon surface layer. A dielectric bridge is formed between a pair of gates when sidewall spacers are formed along the gates. Source/drain (S/D) conduction regions are formed in the SOI surface layer adjacent the sidewalls at the pair of gates. The dielectric bridge blocks selectively formation of S/D conduction regions. A passivating layer is formed over the pair of gates and the dielectric bridge. Contacts are opened partially through the passivation layer. Then, a body contact is opened through the bridge to SOI surface layer and a body contact diffusion is formed. Contact openings are completed through the passivation layer at the S/D diffusions. Tungsten studs are formed in the contact openings.

Abstract: A method of forming a silicon on insulator (SOI) body contact at a pair of field effect transistors (FETs), a sense amplifier including a balanced pair of such FETs and a RAM including the sense amplifiers. A pair of gates are formed on a SOI silicon surface layer. A dielectric bridge is formed between a pair of gates when sidewall spacers are formed along the gates. Source/drain (S/D) conduction regions are formed in the SOI surface layer adjacent the sidewalls at the pair of gates. The dielectric bridge blocks selectively formation of S/D conduction regions. A passivating layer is formed over the pair of gates and the dielectric bridge. Contacts are opened partially through the passivation layer. Then, a body contact is opened through the bridge to SOI surface layer and a body contact diffusion is formed. Contact openings are completed through the passivation layer at the S/D diffusions. Tungsten studs are formed in the contact openings.

Abstract: A DTCMOS circuit produces an output based on a logical combination of input logic signals. The circuit includes input transistors which receive on a respective gate a respective logic signal. The transistors have a body contact which is connected to the gate of another transistor. Transistors which are receiving later arriving logic signals therefore have a threshold voltage lowered by an earlier arriving logic signal. By coupling the earlier arriving logic signal with a body contact of another input transistor, the threshold voltage may be lowered prior to processing of the subsequently arriving logic signal. The DTCMOS circuit may be implemented in SOI with the attendant benefits of a lower supply made possible by the lowered voltage threshold each of the transistors without sacrificing leakage current inherent in DTCMOS circuits.

Abstract: A top clock stacked circuit is provided that substantially prevents charge sharing and that prevents any deleterious bipolar effect. The top clock stacked circuit comprises a primary pre-charge circuit coupled to a primary node, a first device coupled between the primary node and a first secondary node, and a second device coupled between the first secondary node and a second secondary node. A second pre-charge circuit is coupled to the first secondary node and a pre-discharge circuit is coupled to the second secondary node. In response to a first clock polarity, the primary and the second pre-charge circuits pre-charge the primary and the first secondary nodes, respectively, and the pre-discharge circuit pre-discharges the second secondary node. Thereafter, in response to a second clock polarity, the first device creates a path between the primary node and the first secondary node. Because both nodes are pre-charged to the same voltage, charge sharing is substantially prevented.

Abstract: A circuit for selectively controlling the slew rate of a signal on a data line. A capacitor is connected at one end to a common terminal of a power supply and to a switching circuit. The switching circuit advantageously connects the capacitor to the data line in response to a control pulse, capacitively loading the data line so that slew rate is decreased. When the control pulse assumes a different state, the capacitor is connected by the switching circuit to a terminal of a power supply, and acts as a decoupling capacitor. The dual role of the capacitor provides for efficient circuit layout by utilizing one component in two functions.

Abstract: A domino circuit design for handling high stress conditions. The domino logic circuit includes a programmable mechanism for choosing whether the circuit is operating during normal operations or during a stress test, such as a burn-in procedure. In particular, the circuit includes a dual purpose transistor that is controllable by either a precharge signal or an output signal, and includes a mechanism for selecting whether the precharge signal or the output signal is to control the gate input of the dual purpose transistor. Accordingly, the dual purpose transistor will either act in parallel with the precharge device, or a keeper device depending on the mode of operation chosen.

Abstract: A self-timed circuit for use a clocked logic system is disclosed that comprises a timing detection device for detecting a timing margin of a critical path, the critical path being a path that limits the speed of the system. The circuit further comprises increase logic for increasing the speed of the system clock if the timing margin allows it, and decrease logic for decreasing the speed of the system clock if the timing margin indicates such a need. The increase and decrease logic comprise threshold generator and reset logic, and clock control logic.

Abstract: A circuit and method are provided for reducing the DC power consumption of clocked ratioed digital logic circuits. The circuit includes switching circuitry designed to analyze the voltage transitions of a ratioed digital logic circuit and based on such transitions, control the DC current flow through the entire circuit. Through the regulation of DC current flow through a digital logic circuit, the present invention reduces the detrimental effects of hot-electron effects and electromigration concerns which cause digital circuitry to fail. The circuit and method are illustrated by way of a ratioed logic NOR function employing MOSFET technology.