Patents by Inventor Nozomu Akagi
Nozomu Akagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8022477Abstract: A semiconductor apparatus comprises: a semiconductor substrate; and a lateral type MIS transistor disposed on a surface part of the semiconductor substrate. The lateral type MIS transistor includes: a line coupled with a gate of the lateral type MIS transistor; a polycrystalline silicon resistor that is provided in the line, and that has a conductivity type opposite to a drain of the lateral type MIS transistor; and an insulating layer through which a drain voltage of the lateral type MIS transistor is applied to the polycrystalline silicon resistor.Type: GrantFiled: February 21, 2008Date of Patent: September 20, 2011Assignee: DENSO CORPORATIONInventors: Nozomu Akagi, Shigeki Takahashi, Takashi Nakano, Yasushi Higuchi, Tetsuo Fujii, Yoshiyuki Hattori, Makoto Kuwahara
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Publication number: 20110210766Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.Type: ApplicationFiled: May 11, 2011Publication date: September 1, 2011Applicant: DENSO CORPORATIONInventors: Takaaki AOKI, Shoji Mizuno, Shigeki Takahashi, Takashi Nakano, Nozomu Akagi, Yoshiyuki Hattori, Makoto Kuwahara, Kyoko Okada
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Patent number: 7911023Abstract: A semiconductor apparatus is disclosed. The semiconductor apparatus includes a semiconductor substrate that has a first surface and a second surface opposite to each other. The semiconductor apparatus further includes multiple double-sided electrode elements each having a pair of electrodes located respectively on the first and second surfaces of the semiconductor substrate. A current flows between the first and second electrode. Each double-sided electrode element has a PN column region located in the semiconductor substrate. The semiconductor apparatus further includes an insulation trench that surrounds each of multiple double-sided electrode elements, and that insulates and separates the multiple double-sided electrode elements from each other.Type: GrantFiled: November 4, 2008Date of Patent: March 22, 2011Assignee: Denso CorporationInventors: Nozomu Akagi, Hitoshi Yamaguchi, Tetsuo Fujii
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Patent number: 7893458Abstract: A semiconductor device includes: a semiconductor substrate; a lateral MOS transistor disposed in the substrate; a Zener diode disposed in the substrate; and a capacitor disposed in the substrate. The transistor includes a drain and a gate, and the diode and the capacitor are coupled in series between the drain and the gate. This device has minimized dimensions and high switching speed. Further, both of a switching loss and a surge voltage are improved.Type: GrantFiled: August 28, 2007Date of Patent: February 22, 2011Assignee: DENSO CORPORATIONInventors: Shigeki Takahashi, Takashi Nakano, Nozomu Akagi, Yasushi Higuchi, Tetsuo Fujii, Yoshiyuki Hattori, Makoto Kuwahara, Kyoko Okada
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Patent number: 7858475Abstract: A manufacturing method of a semiconductor device includes: forming multiple trenches on a semiconductor substrate; forming a second conductive type semiconductor film in each trench to provide a first column with the substrate between two trenches and a second column with the second conductive type semiconductor film in the trench, the first and second columns alternately repeated along with a predetermined direction; thinning a second side of the substrate; and increasing an impurity concentration in a thinned second side so that a first conductive type layer is provided. The impurity concentration of the first conductive type layer is higher than the first column. The first column provides a drift layer so that a vertical type first-conductive-type channel transistor is formed.Type: GrantFiled: November 9, 2009Date of Patent: December 28, 2010Assignee: DENSO CORPORATIONInventors: Hitoshi Yamaguchi, Takeshi Miyajima, Nozomu Akagi
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Publication number: 20100295170Abstract: A semiconductor device includes a multilayer wiring substrate and a double-sided multi-electrode chip. The double-sided multi-electrode chip includes a semiconductor chip and has multiple electrodes on both sides of the semiconductor chip. The double-sided multi-electrode chip is embedded in the multilayer wiring substrate in such a manner that the double-sided multi-electrode chip is not exposed outside the multilayer wiring substrate. The electrodes of the double-sided multi-electrode chip are connected to wiring layers of the multilayer wiring substrate.Type: ApplicationFiled: May 24, 2010Publication date: November 25, 2010Applicant: DENSO CORPORATIONInventors: Atsushi KOMURA, Yasuhiro Kitamura, Nozomu Akagi, Yasutomi Asai
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Patent number: 7833876Abstract: In a manufacturing of a semiconductor device, at least one of elements is formed in each of element formation regions of a substrate having a main side and a rear side, and the substrate is thinned by polished from a rear side of the substrate, and then, multiple trenches are formed on the rear side of the substrate, so that each trench reaches the main side of the substrate. After that, an insulating material is deposited over an inner surface of each trench to form an insulating layer in the trench, so that the element formation regions are isolated. Thereby, generation of cracks and structural steps in the substrate and separation of element formation regions from the substrate can be suppressed.Type: GrantFiled: August 26, 2008Date of Patent: November 16, 2010Assignee: DENSO CORPORATIONInventors: Nozomu Akagi, Yasuhiro Kitamura, Tetsuo Fujii
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Patent number: 7829971Abstract: A semiconductor apparatus is disclosed. The semiconductor apparatus includes an SOI substrate including an active layer, a buried insulation film and a support substrate; a low potential reference circuit part located in the active layer and operable at a first reference potential; a high potential reference circuit part located in the active layer and operable at a second reference potential; a level-shifting element forming part located in the active layer and for providing a level-shift between the first and second reference potentials; and an insulation member insulating first and second portions of the support substrate from each other, wherein locations of the first and second portions respectively correspond to the low and high potential reference circuit parts.Type: GrantFiled: December 11, 2008Date of Patent: November 9, 2010Assignee: DENSO CORPORATIONInventors: Hiroki Sone, Akira Yamada, Satoshi Shiraki, Nozomu Akagi
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Publication number: 20100112765Abstract: A manufacturing method of a semiconductor device includes: forming multiple trenches on a semiconductor substrate; forming a second conductive type semiconductor film in each trench to provide a first column with the substrate between two trenches and a second column with the second conductive type semiconductor film in the trench, the first and second columns alternately repeated along with a predetermined direction; thinning a second side of the substrate; and increasing an impurity concentration in a thinned second side so that a first conductive type layer is provided. The impurity concentration of the first conductive type layer is higher than the first column. The first column provides a drift layer so that a vertical type first-conductive-type channel transistor is formed.Type: ApplicationFiled: November 9, 2009Publication date: May 6, 2010Applicant: DENSO CORPORATIONInventors: Hitoshi Yamaguchi, Takeshi Miyajima, Nozomu Akagi
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Publication number: 20100102857Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.Type: ApplicationFiled: December 17, 2009Publication date: April 29, 2010Applicant: DENSO CORPORATIONInventors: Takaaki Aoki, Shoji Mizuno, Shigeki Takahashi, Takashi Nakano, Nozomu Akagi, Yoshiyuki Hattori, Makoto Kuwahara, Kyoko Okada
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Patent number: 7671636Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.Type: GrantFiled: March 22, 2007Date of Patent: March 2, 2010Assignee: DENSO CORPORATIONInventors: Takaaki Aoki, Shoji Mizuno, Shigeki Takahashi, Takashi Nakano, Nozomu Akagi, Yoshiyuki Hattori, Makoto Kuwahara, Kyoko Okada
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Publication number: 20090152668Abstract: A semiconductor apparatus is disclosed. The semiconductor apparatus includes an SOI substrate including an active layer, a buried insulation film and a support substrate; a low potential reference circuit part located in the active layer and operable at a first reference potential; a high potential reference circuit part located in the active layer and operable at a second reference potential; a level-shifting element forming part located in the active layer and for providing a level-shift between the first and second reference potentials; and an insulation member insulating first and second portions of the support substrate from each other, wherein locations of the first and second portions respectively correspond to the low and high potential reference circuit parts.Type: ApplicationFiled: December 11, 2008Publication date: June 18, 2009Applicant: DENSO DORPORATIONInventors: Hiroki Sone, Akira Yamada, Satoshi Shiraki, Nozomu Akagi
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Publication number: 20090127624Abstract: A semiconductor device includes: a SOI substrate including a support layer, a first insulation film and a SOI layer; a first circuit; a second circuit; and a trench separation element. The SOI substrate further includes a first region and a second region. The first region has the support layer, the first insulation film and the SOI layer, which are stacked in this order, and the second region has only the support layer. The trench separation element penetrates the support layer, the first insulation film and the SOI layer. The trench separation element separates the first region and the second region. The first circuit is disposed in the SOI layer of the first region. The second circuit is disposed in the support layer of the second region.Type: ApplicationFiled: November 4, 2008Publication date: May 21, 2009Applicant: DENSO CORPORATIONInventors: Masakiyo Sumitomo, Makoto Asai, Nozomu Akagi, Yasuhiro Kitamura, Hiroki Nakamura, Tetsuo Fujii
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Publication number: 20090121290Abstract: A semiconductor device includes a high-breakdown-voltage transistor having a semiconductor layer. The semiconductor layer has an element portion and a wiring portion. The element portion has a first wiring on a front side of the semiconductor layer and a backside electrode on a back side of the semiconductor layer. The element portion is configured as a vertical transistor that causes an electric current to flow in a thickness direction of the semiconductor layer between the first wiring and the backside electrode. The backside electrode is elongated to the wiring portion. The wiring portion has a second wiring on the front side of the semiconductor layer. The wiring portion and the backside electrode provide a pulling wire that allows the electric current to flow to the second wiring.Type: ApplicationFiled: November 6, 2008Publication date: May 14, 2009Applicant: DENSO CORPORATATIONInventors: Akira Yamada, Nozomu Akagi
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Publication number: 20090114985Abstract: A semiconductor apparatus is disclosed. The semiconductor apparatus includes a semiconductor substrate that has a first surface and a second surface opposite to each other. The semiconductor apparatus further includes multiple double-sided electrode elements each having a pair of electrodes located respectively on the first and second surfaces of the semiconductor substrate. A current flows between the first and second electrode. Each double-sided electrode element has a PN column region located in the semiconductor substrate. The semiconductor apparatus further includes an insulation trench that surrounds each of multiple double-sided electrode elements, and that insulates and separates the multiple double-sided electrode elements from each other.Type: ApplicationFiled: November 4, 2008Publication date: May 7, 2009Applicant: DESNO CORPORATIONInventors: Nozomu Akagi, Hitoshi Yamaguchi, Tetsuo Fujii
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Publication number: 20090057812Abstract: In a manufacturing of a semiconductor device, at least one of elements is formed in each of element formation regions of a substrate having a main side and a rear side, and the substrate is thinned by polished from a rear side of the substrate, and then, multiple trenches are formed on the rear side of the substrate, so that each trench reaches the main side of the substrate. After that, an insulating material is deposited over an inner surface of each trench to form an insulating layer in the trench, so that the element formation regions are isolated. Thereby, generation of cracks and structural steps in the substrate and separation of element formation regions from the substrate can be suppressed.Type: ApplicationFiled: August 26, 2008Publication date: March 5, 2009Applicant: DENSO CORPORATIONInventors: Nozomu Akagi, Yasuhiro Kitamura, Tetsuo Fujii
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Publication number: 20080230834Abstract: A semiconductor apparatus comprises: a semiconductor substrate; and a lateral type MIS transistor disposed on a surface part of the semiconductor substrate. The lateral type MIS transistor includes: a line coupled with a gate of the lateral type MIS transistor; a polycrystalline silicon resistor that is provided in the line, and that has a conductivity type opposite to a drain of the lateral type MIS transistor; and an insulating layer through which a drain voltage of the lateral type MIS transistor is applied to the polycrystalline silicon resistor.Type: ApplicationFiled: February 21, 2008Publication date: September 25, 2008Applicant: DENSO CORPORATIONInventors: Nozomu Akagi, Shigeki Takahashi, Takashi Nakano, Yasushi Higuchi, Tetsuo Fujii, Yoshiyuki Hattori, Makoto Kuwahara
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Publication number: 20080185629Abstract: A semiconductor device includes: a semiconductor substrate; multiple MOS type first transistors coupled in parallel with a current path; and a nonvolatile memory for memorizing operating information. Each transistor includes first and second electrodes and a gate electrode for controlling current flowing therebetween. Based on the operating information, each first transistor is selectively set to an active state. When the transistors provide a single transistor, an effective channel width of the single transistor is variable in accordance with the number of the first transistors under the active state.Type: ApplicationFiled: March 13, 2007Publication date: August 7, 2008Applicant: DENSO CORPORATIONInventors: Takashi Nakano, Mitsuhiro Kanayama, Tooru Itabashi, Shigeki Takahashi, Nozomu Akagi
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Publication number: 20080054325Abstract: A semiconductor device includes: a semiconductor substrate; a lateral MOS transistor disposed in the substrate; a Zener diode disposed in the substrate; and a capacitor disposed in the substrate. The transistor includes a drain and a gate, and the diode and the capacitor are coupled in series between the drain and the gate. This device has minimized dimensions and high switching speed. Further, both of a switching loss and a surge voltage are improved.Type: ApplicationFiled: August 28, 2007Publication date: March 6, 2008Applicant: DENSO CORPORATIONInventors: Shigeki Takahashi, Takashi Nakano, Nozomu Akagi, Yasushi Higuchi, Tetsuo Fujii, Yoshiyuki Hattori, Makoto Kuwahara, Kyoko Okada
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Publication number: 20080012610Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.Type: ApplicationFiled: March 22, 2007Publication date: January 17, 2008Applicant: DENSO CORPORATIONInventors: Takaaki Aoki, Shoji Mizuno, Shigeki Takahashi, Takashi Nakano, Nozomu Akagi, Yoshiyuki Hattori, Makoto Kuwahara, Kyoko Okada