Abstract: A photoelectric conversion element includes a first electrode, a second electrode facing the first electrode, and a photosensitive layer between the first electrode and the second electrode. At least one selected from the group consisting of the first electrode and the second electrode transmits light. The photosensitive layer contains a quantum dot and a semiconducting carbon nanotube that absorbs the light. The quantum dot has a higher absolute value of electron affinity than the semiconducting carbon nanotube.

Abstract: An imaging device includes a pixel electrode, a counter electrode that faces the pixel electrode, a first photoelectric conversion layer that is located between the pixel electrode and the counter electrode and that generates first signal charge, a second photoelectric conversion layer that is located between the first photoelectric conversion layer and the pixel electrode and that generates second signal charge, a first barrier layer that is located between the first photoelectric conversion layer and the second photoelectric conversion layer and that forms a first heterojunction barrier against the first signal charge in the first photoelectric conversion layer, and a charge accumulator that is electrically connected to the pixel electrode and that accumulates the first signal charge and the second signal charge.

Abstract: A photoelectric conversion element includes a photoelectric conversion layer, a first electrode that collects holes generated in the photoelectric conversion layer, and a second electrode that is positioned opposite to the first electrode with the photoelectric conversion layer being disposed therebetween and that collects electrons generated in the photoelectric conversion layer. The photoelectric conversion layer includes a first quantum dot layer including first quantum dots each having a surface modified with a first ligand and includes a second quantum dot layer including second quantum dots each having a surface modified with a second ligand different from the first ligand. The second quantum dot layer has an ionization potential greater than an ionization potential of the first quantum dot layer. A second value that represents a particle diameter distribution of the second quantum dots is less than a first value that represents a particle diameter distribution of the first quantum dots.

Abstract: An organic device includes at least one electrode, an insulating layer adjacent to the at least one electrode in a plan view, and an organic layer that is continuously in contact with an upper surface of the at least one electrode and an upper surface of the insulating layer. The organic layer contains a polymer of an organic material. The organic material contains a basic molecular skeleton and a polymerizable functional group. In the polymer, the organic material is polymerized through the polymerizable functional group.

Abstract: An imaging device includes a pixel electrode, a counter electrode that faces the pixel electrode, a first photoelectric conversion layer that is located between the pixel electrode and the counter electrode and that generates first signal charge, a second photoelectric conversion layer that is located between the first photoelectric conversion layer and the pixel electrode and that generates second signal charge, a first barrier layer that is located between the first photoelectric conversion layer and the second photoelectric conversion layer and that forms a first heterojunction barrier against the first signal charge in the first photoelectric conversion layer, and a charge accumulator that is electrically connected to the pixel electrode and that accumulates the first signal charge and the second signal charge.

Abstract: An imaging device includes: a semiconductor substrate; pixel electrodes located above the semiconductor substrate and each electrically connected to the semiconductor substrate; a counter electrode located above the pixel electrodes; a first photoelectric conversion layer located between the counter electrode and the pixel electrodes; and at least one first light-shielding body located in or above the first photoelectric conversion layer. The first photoelectric conversion layer contains a semiconducting carbon nanotube that absorbs light in a first wavelength range and an organic molecule that covers the semiconducting carbon nanotube, absorbs light in a second wavelength range, and emits fluorescence in a third wavelength range. The at least one first light-shielding body absorbs or reflects light with a wavelength in at least part of the second wavelength range.

Abstract: An imaging device includes a pixel electrode, a counter electrode, a first quantum dot that includes a first core which generates first signal charge and a first shell, a second quantum dot that includes a second core which generates second signal charge and a second shell. In a case where the potential difference between the pixel electrode and the counter electrode is a first potential difference, the first signal charge does not pass through the first shell and is held in the first core and the second signal charge passes through the second shell and is collected by the pixel electrode. In a case where the potential difference between the pixel electrode and the counter electrode is a second potential difference which is larger than the first potential difference, the first signal charge passes through the first shell and is collected by the pixel electrode.

Abstract: A method for producing the photoelectric conversion element includes, in carbon nanotubes including semiconducting carbon nanotubes having different chiralities from each other and metallic carbon nanotubes, changing a chirality distribution in the semiconducting carbon nanotubes, separating the carbon nanotubes into the semiconducting carbon nanotubes and the metallic carbon nanotubes after changing the chirality distribution, covering the semiconducting carbon nanotubes with a polymer after performing separating, and forming a photoelectric conversion film including the semiconducting carbon nanotubes between a pair of electrodes after performing covering with the polymer.

Abstract: A method for producing the photoelectric conversion element includes, in carbon nanotubes including semiconducting carbon nanotubes having different chiralities from each other and metallic carbon nanotubes, changing a chirality distribution in the semiconducting carbon nanotubes, separating the carbon nanotubes into the semiconducting carbon nanotubes and the metallic carbon nanotubes after changing the chirality distribution, covering the semiconducting carbon nanotubes with a polymer after performing separating, and forming a photoelectric conversion film including the semiconducting carbon nanotubes between a pair of electrodes after performing covering with the polymer.

Abstract: A method of selectively arraying ferritin and inorganic particles on a silicon oxide substrate at regions having vanadium, niobium or tantalum. An aspect of the method includes steps of: preparing a solution which contains ferritin modified at an N-terminal part of a subunit with a peptide set out in SEQ ID NO: 1, and from 0.01 v/v % to 10 v/v % of a nonionic surfactant and having a pH of from 7.4 to 8.2; and a binding step of bringing the solution in contact with regions of the substrate having vanadium, niobium, or tantalum to selectively array peptide-modified ferritin to vanadium, niobium or, tantalum portion. The method may also include a step of selectively arraying ferritin modified with the peptide set out in SEQ ID NO: 1, and the inorganic particles contained in ferritin at the vanadium, niobium, or tantalum portion by removing the solution.

Abstract: A method of selectively arraying ferritin and inorganic particles on a silicon oxide substrate having a chromium, niobium or tungsten portion. An aspect of the method includes steps of: preparing a solution which contains ferritin modified at an N-terminal part of a subunit with a peptide set out in SEQ ID NO: 1, and a nonionic surfactant; and a binding step of bringing the solution in contact with the silicon oxide substrate to selectively array peptide-modified ferritin to the chromium, niobium or, tungsten portion. Another aspect of the method includes selectively arraying ferritin modified with the peptide set out in SEQ ID NO: 1, and the inorganic particles contained in ferritin at the chromium, niobium, or tungsten portion by removing the solution.

Abstract: A method for producing a thin oxidized carbon film according to the present disclosure includes: a first step of preparing a thin carbon film and a copper oxide being in contact with the thin carbon film and containing a mixture of Cu2O and CuO; and a second step of applying a voltage or a current between the thin carbon film and the copper oxide, with an electrical potential of the thin carbon film being positive relative to that of the copper oxide, and thereby oxidizing and converting a contact area of the thin carbon film with the copper oxide into an oxidized portion composed of oxidized carbon so as to form a thin oxidized carbon film having the oxidized portion.

Abstract: The present disclosure provides a spin device including: a graphene; a first ferromagnetic electrode and a second electrode that are in electrical contact with and sandwich the graphene; a third ferromagnetic electrode and a fourth electrode that sandwich the graphene at a position apart from the first and second electrodes in electrical contact with the graphene; a current applying portion that applies an electric current between the first ferromagnetic electrode and the second electrode; and a voltage-signal detecting portion that detects spin accumulation information as a voltage signal via the third ferromagnetic electrode and the fourth electrode. The spin accumulation information is generated, by application of the electric current, in a part of the graphene that is sandwiched between the third and fourth electrodes. The first and third ferromagnetic electrodes are disposed on the same surface of the graphene, and the second and fourth electrodes are non-magnetic or ferromagnetic electrodes.

Abstract: A production method of the present disclosure includes: a first step of preparing a multi-layer graphene, and an iron oxide that is a ferromagnetic material contacting the graphene and containing Fe3O4; and a second step of applying a voltage or a current between the graphene and the iron oxide with an electric potential of the graphene being positive relative to that of the iron oxide, so as to oxidize a part of the graphene or oxidize a part of the graphene and a part of Fe3O4, and thus to form a barrier layer composed of oxidized graphene or of oxidized graphene and Fe2O3 between the graphene and the iron oxide, and thereby forming a spin injection electrode that includes the graphene, the iron oxide, and the barrier layer located at an interface between the graphene and the iron oxide, and that allows spins to be injected into the graphene from the iron oxide via the barrier layer.

Abstract: A film structure (carbon material-insulating film structure) of the present invention includes a carbon material and an insulating film disposed on the carbon material and composed of fluorine-added magnesium oxide. The amount of added fluorine in the magnesium oxide is 0.0049 atomic percent or more and 0.1508 atomic percent or less. This film structure facilitates the realization of an electronic device, such as a spin device, which uses a carbon material such as graphene. This film structure is formed, for example, by sputtering using a target containing magnesium oxide and magnesium fluoride.

Abstract: A method for producing a thin oxidized carbon film according to the present disclosure includes: a first step of preparing a thin carbon film and a copper oxide being in contact with the thin carbon film and containing a mixture of Cu2O and CuO; and a second step of applying a voltage or a current between the thin carbon film and the copper oxide, with an electrical potential of the thin carbon film being positive relative to that of the copper oxide, and thereby oxidizing and converting a contact area of the thin carbon film with the copper oxide into an oxidized portion composed of oxidized carbon so as to form a thin oxidized carbon film having the oxidized portion.

Abstract: The production method for the oxidized carbon thin film of the present disclosure includes: a first step of preparing a carbon thin film and iron oxide that is in contact with the carbon thin film and contains Fe2O3; and a second step of forming an oxidized carbon thin film having an oxidized portion composed of oxidized carbon by applying a voltage or current between the carbon thin film and the iron oxide with the carbon thin film side being positive and thereby oxidizing a contact portion of the carbon thin film with the iron oxide to change it into the oxidized portion. This production method allows a pattern of nanometer order to be formed on a carbon thin film represented by graphene. The method causes less damage to the formed pattern and has high affinity with a semiconductor process, thereby enabling a wide range of applications as a process technique for producing an electronic device.

Abstract: The present invention relates to a method for detecting an antigen with use of an antibody and an enzyme. Specifically, the present invention provides a method for detecting an antigen without use of a labeled-antibody. the method comprises immersing particles in a first buffer solution which is predicted to contain the antigen; wherein an antibody and a multi-copper oxidase CueO are immobilized on each surface of the particles, and the antibody reacts specifically with the antigen. The method further comprises the following steps recovering the obtained particles; mixing the particles recovered, an oxidation-reduction indicator (reductant), and a second buffer solution so as to prepare a reaction solution; measuring an activity degree of the multi-copper oxidase CueO contained in the reaction solution; determining that the first buffer solution contains the antigen based on the above activity degree.

Abstract: The magnetic tunnel junction device of the present invention includes a first ferromagnetic layer, a second ferromagnetic layer, an insulating layer formed between the first ferromagnetic layer and the second ferromagnetic layer. The insulating layer is composed of fluorine-added MgO. The fluorine content in the insulating layer is 0.00487 at. % or more and 0.15080 at. % or less. This device, although it includes a MgO insulating layer, exhibits superior magnetoresistance properties to conventional devices including MgO insulating layers. The fluorine content is preferably 0.00487 at. % or more and 0.05256 at. % or less.

Abstract: The present invention relates to a method for detecting an antigen with use of an antibody and an enzyme. Specifically, the present invention provides a method for detecting an antigen without use of a labeled-antibody. the method comprises immersing particles in a first buffer solution which is predicted to contain the antigen; wherein an antibody and a multi-copper oxidase CueO are immobilized on each surface of the particles, and the antibody reacts specifically with the antigen. The method further comprises the following steps recovering the obtained particles; mixing the particles recovered, an oxidation-reduction indicator (reductant), and a second buffer solution so as to prepare a reaction solution; measuring an activity degree of the multi-copper oxidase CueO contained in the reaction solution; determining that the first buffer solution contains the antigen based on the above activity degree.