Publication number: 20040027733
Abstract: A magnetoresistive element includes a pair of ferromagnetic layers and a non-magnetic layer arranged between the ferromagnetic layers. At least one of the ferromagnetic layers has a composition expressed by (MxLy)100−zRz at the interface with the non-magnetic layer. The non-magnetic layer includes at least one element selected from the group consisting of B, C, N, O, and P. Here, M is FeaCobNic, L is at least one element selected from the group consisting of Pt, Pd, Ir, and Rh, R is an element that has a lower free energy to form a compound with the element of the non-magnetic layer that is at least one selected from the group consisting of B, C, N, O, and P than does any other element included in the composition as M or L, and a, b, c, x, y, and z satisfy a+b+c=100, a≧30, x+y=100, 0<y≦35, and 0.1≦z≦20. This element can provide a high MR ratio. A method for manufacturing a magnetoresistive element includes a first heat treatment process at 200° C.
Type:
Application
Filed:
June 27, 2003
Publication date:
February 12, 2004
Applicant:
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Inventors:
Nozomu Matsukawa, Masayoshi Hiramoto, Akihiro Odagawa, Yasunari Sugita, Mitsuo Satomi, Yoshio Kawashima
Patent number: 6632520
Abstract: Magnetic film comprising a substantially crystalline magnetic layer and an intermediate layer alternately formed in contact with each other, wherein the magnetic layer has composition (M1&agr;1X1&bgr;1)100−&dgr;1A1&dgr;1 (&agr;1, &bgr;1, and &dgr;1 represent % by atomic weight; M1 is at least one of Fe, Co, and Ni; X1 is at least one of Mg, Ca, Sr, Ba, Si, Ge, Sn, Al, Ga, and transition metals excluding M1; and A1 is at least one of O and N), wherein:
0.1≦&bgr;1≦12
&agr;1+&bgr;1=100
0<&dgr;1≦10;
the intermediate layer has composition (M2&agr;2X2&bgr;2)100−&dgr;2A2&dgr;2 (&agr;2, &bgr;2, and &dgr;2 represent % by atomic weight; M2 is at least one of Fe, Co, and Ni; X2 is at least one of Mg, Ca, Sr, Ba, Si, Ge, Sn, Al, Ga, Ge and transition metals excluding the M2; and A2 is O), wherein:
0.1≦&bgr;2≦80
&agr;2+&bgr;2=100
&dgr;1≦&dgr;2≦67.
Type:
Grant
Filed:
September 2, 1999
Date of Patent:
October 14, 2003
Assignee:
Matsushita Electric Industrial Co., Ltd.
Inventors:
Masayoshi Hiramoto, Nozomu Matsukawa, Hiroshi Sakakima
Publication number: 20030184921
Abstract: The present invention provides a magnetoresistive (MR) element that is excellent in MR ratio and thermal stability and includes at least one magnetic layer including a ferromagnetic material M—X expressed by M100−aXa. Here, M is at least one selected from Fe, Co and Ni, X is expressed by X1bX2cX3d (X1 is at least one selected from Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt and Au, X2 is at least one selected from Al, Sc, Ti, V, Cr, Mn, Ga, Ge, Y, Zr, Nb, Mo, Hf, Ta, W, Re, Zn and lanthanide series elements, and X3 is at least one selected from Si, B, C, N, O, P and S), and a, b, c and d satisfy 0.05≦a≦60, 0≦b≦60, 0≦c≦30, 0≦d≦20, and a=b+c+d.
Type:
Application
Filed:
February 19, 2003
Publication date:
October 2, 2003
Inventors:
Yasunari Sugita, Masayoshi Hiramoto, Nozomu Matsukawa, Mitsuo Satomi, Yoshio Kawashima, Akihiro Odagawa