Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

Abstract: A method and apparatus for calibration non-contact temperature sensors within a process chamber are described herein. The calibration of the non-contact temperature sensors includes the utilization of a band edge detector to determine the band edge absorption wavelength of a substrate. The band edge detector is configured to measure the intensity of a range of wavelengths and determines the actual temperature of a substrate based off the band edge absorption wavelength and the material of the substrate. The calibration method is automated and does not require human intervention or disassembly of a process chamber for each calibration.

Abstract: Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

Abstract: Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

Abstract: Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

Abstract: One or more embodiments herein relate to methods for detection using optical emission spectroscopy. In these embodiments, an optical signal is delivered from the process chamber to an optical emission spectrometer (OES). The OES identifies emission peaks of photons, which corresponds to the optical intensity of radiation from the photons, to determine the concentrations of each of the precursor gases and reaction products. The OES sends input signals of the data results to a controller. The controller can adjust process variables within the process chamber in real time during deposition based on the comparison. In other embodiments, the controller can automatically trigger a process chamber clean based on a comparison of input signals of process chamber residues received before the deposition process and input signals of process chamber residues received after the deposition process.

Abstract: A method and apparatus for calibration non-contact temperature sensors within a process chamber are described herein. The calibration of the non-contact temperature sensors includes the utilization of a band edge detector to determine the band edge absorption wavelength of a substrate. The band edge detector is configured to measure the intensity of a range of wavelengths and determines the actual temperature of a substrate based off the band edge absorption wavelength and the material of the substrate. The calibration method is automated and does not require human intervention or disassembly of a process chamber for each calibration.

Abstract: A method and apparatus for calibration non-contact temperature sensors within a process chamber are described herein. The calibration of the non-contact temperature sensors includes the utilization of a band edge detector to determine the band edge absorption wavelength of a substrate. The band edge detector is configured to measure the intensity of a range of wavelengths and determines the actual temperature of a substrate based off the band edge absorption wavelength and the material of the substrate. The calibration method is automated and does not require human intervention or disassembly of a process chamber for each calibration.

Abstract: A method and apparatus for calibration non-contact temperature sensors within a process chamber are described herein. The calibration of the non-contact temperature sensors includes the utilization of a band edge detector to determine the band edge absorption wavelength of a substrate. The band edge detector is configured to measure the intensity of a range of wavelengths and determines the actual temperature of a substrate based off the band edge absorption wavelength and the material of the substrate. The calibration method is automated and does not require human intervention or disassembly of a process chamber for each calibration.

Abstract: Embodiments of the present disclosure provide a thermal process chamber that includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate alters temperature profile. The shape of the beam spot produced by the spot heating module can be modified without making changes to the optics of the spot heating module.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber may include a substrate support, a first plurality of heating elements disposed over the substrate support, and one or more high-energy radiant source assemblies disposed over the first plurality of heating elements. The one or more high-energy radiant source assemblies are utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

Abstract: A method and apparatus for a process chamber for thermal processing is described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first and a second set of gas inject passages. The chamber body may also include a first and a second set of exhaust ports. The process chamber may have a shared gas panel and/or a shared exhaust conduit. The process chamber described herein enables for the processing of multiple substrates simultaneously with improved process gas flow and heat distribution.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

Abstract: Embodiments herein relate to chamber liners with a multi-piece design for use in processing chambers. The multi-piece design can have an inner portion and an outer portion. A portion of the inner surface of the outer portion may be designed to be in contact with the outer surface of the inner portion at a single junction point, creating a thermal barrier between the inner portion and outer portion, thus reducing heat transfer from the inner portion and outer portion. The thermal barrier creates higher temperatures at the chamber liner inner surface and therefore leads to shorter heat up times within the chamber. Additionally, the thermal barrier also creates lower temperatures near the base ring and outer surface of the outer ring, thereby protecting the chamber walls and requiring less thermal regulation/dissipation at the chamber walls.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

Abstract: Embodiments described herein provide processing chambers that include an enclosure for a processing volume, a rotatable support within the enclosure, the support having a shaft that extends outside the enclosure, wherein the shaft has a signal feature located outside the processing volume, an energy module within the enclosure, wherein the shaft extends through the energy module, one or more directed energy sources coupled to the enclosure, and one or more signalers positioned proximate to the signal feature, each signaler coupled to at least one of the directed energy sources.