Abstract: Implant engagement mechanisms are disclosed for maintaining engagement with a stent until it has been fully deployed and expanded from a catheter or sheath. The apparatus, method and system involving these engagement mechanisms allow a physician to withdraw or retract a sheath prior to full deployment, thereby allowing for redeployment of the stent at a more desirable position.

Abstract: Implant engagement mechanisms are disclosed for maintaining engagement with a stent until it has been fully deployed and expanded from a catheter or sheath. The apparatus, method and system involving these engagement mechanisms allow a physician to withdraw or retract a sheath prior to full deployment, thereby allowing for redeployment of the stent at a more desirable position.

Abstract: Implant engagement mechanisms are disclosed for maintaining engagement with a stent until it has been fully deployed and expanded from a catheter or sheath. The apparatus, method and system involving these engagement mechanisms allow a physician to withdraw or retract a sheath prior to full deployment, thereby allowing for redeployment of the stent at a more desirable position.

Abstract: A method for non-contact measurement of stress in a thin-film deposited on a substrate is disclosed. The method may include measuring first topography data of a substrate having a thin-film deposited thereupon. The method may also include comparing the first topography data with second topography data of the substrate that is measured prior to thin-film deposition. The method may further include obtaining a vertical displacement of the substrate based on the comparison between the first topography data and the second topography data. The method may also include detecting a stress value in the thin-film deposited on the substrate based on a fourth-order polynomial equation and the vertical displacement.

Abstract: A vascular prosthesis utilizing drawn-filled tubing (DFT) wire to aid in visualizing the prosthesis without needing supplemental radiopaque material is described.

Abstract: A method for non-contact measurement of stress in a thin-film deposited on a substrate is disclosed. The method may include measuring first topography data of a substrate having a thin-film deposited thereupon. The method may also include comparing the first topography data with second topography data of the substrate that is measured prior to thin-film deposition. The method may further include obtaining a vertical displacement of the substrate based on the comparison between the first topography data and the second topography data. The method may also include detecting a stress value in the thin-film deposited on the substrate based on a fourth-order polynomial equation and the vertical displacement.

Abstract: A method for non-contact measurement of stress in a thin-film deposited on a substrate is disclosed. The method may include measuring first topography data of a substrate having a thin-film deposited thereupon. The method may also include comparing the first topography data with second topography data of the substrate that is measured prior to thin-film deposition. The method may further include obtaining a vertical displacement of the substrate based on the comparison between the first topography data and the second topography data. The method may also include detecting a stress value in the thin-film deposited on the substrate based on a fourth-order polynomial equation and the vertical displacement.

Abstract: An open-irrigated catheter system includes a catheter body and a tip assembly, coupled to a distal end of the catheter body. The tip assembly includes an exterior wall that is conductive for delivering radio frequency (RF) energy for an RF ablation procedure, and that defines an interior region. The exterior wall includes a number of proximal irrigation ports and a number of distal irrigation ports. At least one fluid chamber is defined within the interior region and is in fluid communication with at least one of the proximal irrigation ports and the distal irrigation ports. At least one fluid lumen extends from a fluid source, through the catheter body, to the tip assembly, and is in fluid communication with the at least one fluid chamber.

Abstract: Implant engagement mechanisms are disclosed for maintaining engagement with a stent until it has been fully deployed and expanded from a catheter or sheath. The apparatus, method and system involving these engagement mechanisms allow a physician to withdraw or retract a sheath prior to full deployment, thereby allowing for redeployment of the stent at a more desirable position.

Abstract: Implant engagement mechanisms are disclosed for maintaining engagement with a stent until it has been fully deployed and expanded from a catheter or sheath. The apparatus, method and system involving these engagement mechanisms allow a physician to withdraw or retract a sheath prior to full deployment, thereby allowing for redeployment of the stent at a more desirable position.

Abstract: A method for non-contact measurement of stress in a thin-film deposited on a substrate is disclosed. The method may include measuring first topography data of a substrate having a thin-film deposited thereupon. The method may also include comparing the first topography data with second topography data of the substrate that is measured prior to thin-film deposition. The method may further include obtaining a vertical displacement of the substrate based on the comparison between the first topography data and the second topography data. The method may also include detecting a stress value in the thin-film deposited on the substrate based on a fourth-order polynomial equation and the vertical displacement.

Abstract: An Inverted Cylindrical Magnetron (ICM) System and Methods of Use is disclosed herein generally comprising a co-axial central anode concentrically located within a first annular end anode and a second annular end anode; a process chamber including a top end and a bottom end in which the first annular end anode and the second annular end anode are coaxially disposed, whereby the first annular end anode, the second annular end anode, and the central anode form a 3-anode configuration to provide electric field uniformity, and the process chamber including a central annular space coupled to a tube insulator disposed about the central annular space wall; a cathode concentrically coupled to the tube insulator and a target; and a plurality of multi-zone electromagnets or hybrid electro-permanent magnets surrounding the exterior of the process chamber providing a tunable magnetic field.

Abstract: Implant engagement mechanisms are disclosed for maintaining engagement with a stent until it has been fully deployed and expanded from a catheter or sheath. The apparatus, method and system involving these engagement mechanisms allow a physician to withdraw or retract a sheath prior to full deployment, thereby allowing for redeployment of the stent at a more desirable position.

Abstract: An open-irrigated catheter system includes a catheter body and a tip assembly, coupled to a distal end of the catheter body. The tip assembly includes an exterior wall that is conductive for delivering radio frequency (RF) energy for an RF ablation procedure, and that defines an interior region. The exterior wall includes a number of proximal irrigation ports and a number of distal irrigation ports. At least one fluid chamber is defined within the interior region and is in fluid communication with at least one of the proximal irrigation ports and the distal irrigation ports. At least one fluid lumen extends from a fluid source, through the catheter body, to the tip assembly, and is in fluid communication with the at least one fluid chamber.

Abstract: An Inverted Cylindrical Magnetron (ICM) System and Methods of Use is disclosed herein generally comprising a co-axial central anode concentrically located within a first annular end anode and a second annular end anode; a process chamber including a top end and a bottom end in which the first annular end anode and the second annular end anode are coaxially disposed, whereby the first annular end anode, the second annular end anode, and the central anode form a 3-anode configuration to provide electric field uniformity, and the process chamber including a central annular space coupled to a tube insulator disposed about the central annular space wall; a cathode concentrically coupled to the tube insulator and a target; and a plurality of multi-zone electromagnets or hybrid electro-permanent magnets surrounding the exterior of the process chamber providing a tunable magnetic field.

Abstract: A system for depositing a vapor phase organic compound onto a substrate, comprising a vacuum chamber comprising a wall, a wall heater in thermal communication with the wall of the vacuum chamber, at least one of an evaporative source and a transport polymerization source configured to introduce the vapor phase organic compound into the chamber, and a substrate holder disposed within the vacuum chamber, wherein the substrate holder comprises a cooled chuck, a heat transfer gas source for introducing a heat transfer gas to a space between the cooled chuck and the substrate, and a substrate clamping mechanism comprising at least one of an electrostatic, mechanical and magnetic clamping mechanism.

Abstract: A substrate holder for holding and cooling a substrate during a film deposition process is disclosed, wherein the substrate holder comprises a cooled chuck, and a clamping member movably associated with the cooled chuck, wherein the clamping member is movable between an unclamped position in which a substrate is removable from the substrate holder and a clamped position in which a substrate is clamped to the substrate holder substantially adjacent the cooled chuck.

Abstract: A Process Module (“PM”) is designed to facilitate Transport Polymerization (“TP”) of precursors that are useful for preparations of low Dielectric Constant (“?”) films. The PM consists primarily of a Material Delivery System (“MDS”) with a high temperature Vapor Phase Controller (“VFC”), a TP Reactor, a Treatment Chamber, a Deposition Chamber and a Pumping System. The PM is designed to facilitate TP for new precursors and for film deposition and stabilization processes.

Abstract: A semiconductor equipment that is useful for the fabrication of integrated circuits (“IC”). More specifically, this invention relates to a “reactive-reactor” for a transport polymerization (“TP”) process module, wherein the process module is useful for the deposition of low dielectric (“&egr;”) thin films in IC manufacture. The reactive-reactor has reactive metal interior surfaces for effective conversion of precursors to intermediates. The resultant reaction products of the precursor and the interior surface material of the reactive-reactor are very stable, and do not cause metallic contamination of the semiconductors. The reactive-reactor of this invention is also equipped with Reactor Re-generating capacity to restore the reactive metal interior surfaces.

Abstract: A multi-stage transport polymerization (“TP”) reactor useful for making a thin film for the fabrication of integrated circuits. One TP reactor has two distinct heating zones that facilitate the cracking of specific precursor materials. The multi-stage reactor comprises a first low temperature heating zone that heats incoming precursor materials to a temperature that is lower than the “cracking” temperature of the precursor. The second heating zone is maintained at a temperature useful for breaking the chemical bonds of a desired leaving groups in the selected precursor. Specialized heating bodies, which transfer heat to the precursor material in the low and high temperature zones, are used as elements of the invention that can simultaneously decrease the total volume and increase the inside surface area of the TP reactor. Chemistries of precursors used in the multi-stage reactor are also provided.