Abstract: Silicone urethane (meth)acrylates can have at least three (meth)acrylate groups and not more urethane groups than (meth)acrylate groups. A method for preparing the silicone urethane (meth)acrylates involves reacting at least one hydroxy functional silicone (meth)acrylate with at least one isocyanate functional urethane (meth)acrylate. Compositions can contain the silicone urethane (meth)acrylates, and are useful for the production of release coatings, protective films, and protective coatings; and for the manufacturing of 3D printed objects by stereolithography.

Abstract: A method is useful for preparing partially hydrogenated chlorosilanes by selective hydrogenation with a compound of the formula R2AlH, wherein R is a branched or cyclic hydrocarbon. Partially hydrogenated chlorosilanes can be prepared with said method, in particular partially hydrogenated chlorosilanes represented by the formula Cl3SiSi(SiH3)3, (Cl3Si)2Si(SiH3)2 or HSi(SiH3)2SiCl3.

Abstract: Methods can be used for producing three-dimensional objects by powder bed fusion, using inks containing superparamagnetic particles and solvents. Sintering is performed by a magnetic field having a frequency of 50 kHz to 5 GHz.

Abstract: The present invention relates to an additive manufacturing process using a composition comprising the reaction product of a polyester polyol and a compound comprising at least one functional group that can react with a hydroxyl-group of the polyester polyol and at least one further functional group, selected from acrylate- or methacrylate-group, wherein the polyester polyol is based on at least one organic acid comprising at least two carboxyl groups or its anhydride and at least one polyol comprising at least two hydroxy-groups, wherein the reaction product has a glass transition temperature Tg of below 23° C., wherein the composition optionally further comprises a photoinitiator, as a photopolymerisable material in.

Abstract: A method prepares hydridosilane oligomers, where the obtainable hydridosilane oligomers are useful. A method can also be used for preparing coating compositions and for preparing a silicon-containing layer.

Abstract: A method is useful for preparing partially hydrogenated chlorosilanes by selective hydrogenation with a compound of the formula R2AlH, wherein R is a branched or cyclic hydrocarbon. Partially hydrogenated chlorosilanes can be prepared with said method, in particular partially hydrogenated chlorosilanes represented by the formula Cl3SiSi(SiH3)3, (Cl3Si)2Si(SiH3)2 or HSi(SiH3)2SiCl3.

Abstract: The present invention relates to a formulation comprising: i) at least one hydrolysate of at least one compound of formula (I) RSi(OX)3 (I) where X, the same or different, is H, C1-C4 alkyl or acyl, R=OX, OH, C1-C4 alkyl or alkoxy silyl-substituted ethylene radical, ii) at least one hydrolysate of at least one polyisocyanurate bearing alkoxy silyl alkyl units, iii) at least one polymer bearing hydroxyl groups, and iv) a solvent mixture containing water comprising at least one alcohol with 1 to 4 carbon atoms, wherein the pH value of the formulation lies in a range from 1.8-4.7, preferably from 3-4.5, and the content of the polymer bearing hydroxyl groups ranges from 13 wt. % to 33 wt. % related to the solids content in the formulation. The invention further relates to a method for the production of said formulation, the use thereof in the production of laminate structures and corresponding laminate structures having at least two layers comprising the formulation.

Abstract: The present invention relates to compositions comprising at least one hydridosilane of the generic formula SinHm with n?5 and m=(2n) and (2n+2) and at least one compound of the formula HnB (OR)3?n with R=C1-C10-alkyl, C6-C10-aryl, C7-C14-aralkyl, halogen, n=0, 1, 2, to processes for preparation thereof and use thereof.

Abstract: The present invention provides the octasilane 2,2,3,3-tetrasilyltetrasilane 1, compositions comprising one or more additional constituents that are not 1 as well as 2,2,3,3-tetrasilyltetrasilane 1, processes for preparing 2,2,3,3-tetrasilyltetrasilane 1 and mixtures of higher hydridosilanes that include 1. The present invention further provides for the use of 1 and mixtures of higher hydridosilanes including 1 for deposition of silicon-containing material.

Abstract: The present invention relates to compositions comprising at least one hydridosilane of the generic formula SinHm with n?5 and m=(2n) and (2n+2) and at least one compound of the formula HnB (OR)3-n with R=C1-C10-alkyl, C6-C10-aryl, C7-C14-aralkyl, halogen, n=0, 1, 2, to processes for preparation thereof and use thereof.

Abstract: The present invention relates to a liquid-phase method for doping a semiconductor substrate, characterized in that a first composition containing at least one first dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the first composition; a second composition containing at least one second dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the second composition, where the one or more region(s) coated with the first composition and the one or more region(s) coated with the second composition are different and do not overlap significantly and where the first dopant is an n-type dopant and the second dopant is a p-type dopant or vice versa; the regions of the surface of the semiconductor substrate coated with the first composition and with the

Abstract: The present invention relates to a liquid-phase process for producing structured silicon- and/or germanium-containing coatings by the application to a substrate of at least one coating composition, the partial activation of the resulting coating on the coated substrate, and oxidation of non-activated coating on the substrate, to the coats produced by the process and to their use.

Abstract: The present invention relates to a method for producing highly doped polycrystalline semiconductor layers on a semiconductor substrate, wherein a first Si precursor composition comprising at least one first dopant is applied to one or more regions of the surface of the semiconductor substrate; optionally a second Si precursor composition comprising at least one second dopant is applied to one or more other regions of the surface of the semiconductor substrate, where the first dopant is an n-type dopant and the second dopant is a p-type dopant or vice versa; and the coated regions of the surface of the semiconductor substrate are each converted, so as to form polycrystalline silicon from the Si precursor. The invention further relates to the semiconductor obtainable by the method and to the use thereof, especially in the production of solar cells.

Abstract: The present invention relates to a liquid-phase method for doping a semiconductor substrate, characterized in that a first composition containing at least one first dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the first composition; a second composition containing at least one second dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the second composition, where the one or more region(s) coated with the first composition and the one or more region(s) coated with the second composition are different and do not overlap significantly and where the first dopant is an n-type dopant and the second dopant is a p-type dopant or vice versa; the regions of the surface of the semiconductor substrate coated with the first composition and with the

Abstract: The present invention relates to a liquid-phase process for producing structured silicon- and/or germanium-containing coatings by the application to a substrate of at least one coating composition, the partial activation of the resulting coating on the coated substrate, and oxidation of non-activated coating on the substrate, to the coats produced by the process and to their use.

Abstract: A method for forming an integrated circuit having openings in a mold layer and for producing capacitors is disclosed. In one embodiment, nanotubes or nanowires are grown vertically on a horizontal substrate surface. The nanotubes or nanowires serve as a template for forming openings in a mold layer. The substrate is covered with a mold material after the formation of the nanowires or nanotubes. One embodiment provides mold layers having openings with a much higher aspect ratio.

Abstract: A method of forming an integrated circuit having a capacitor is disclosed. In one embodiment, the method includes forming a capacitor element with a first electrode, a dielectric layer and a second electrode. The capacitor element is formed using a support layer.

Abstract: A structure and method of forming a capacitor is described. In one embodiment, the capacitor includes a cylindrical first electrode having an inner portion bounded by a bottom surface and an inner sidewall surface, the first electrode further having an outer sidewall, the first electrode being formed from a conductive material. An insulating fill material is disposed within the inner portion of the first electrode. A capacitor dielectric is disposed adjacent at least a portion of the outer sidewall of the first electrode. A second electrode is disposed adjacent the outer sidewall of the first electrode and separated therefrom by the capacitor dielectric. The second electrode is not formed within the inner portion of the first electrode.

Abstract: A structure and method of forming a capacitor is described. In one embodiment, the capacitor includes a cylindrical first electrode having an inner portion bounded by a bottom surface and an inner sidewall surface, the first electrode further having an outer sidewall, the first electrode being formed from a conductive material. An insulating fill material is disposed within the inner portion of the first electrode. A capacitor dielectric is disposed adjacent at least a portion of the outer sidewall of the first electrode. A second electrode is disposed adjacent the outer sidewall of the first electrode and separated therefrom by the capacitor dielectric. The second electrode is not formed within the inner portion of the first electrode.

Abstract: A method for forming a capacitor structure, according to which the following consecutive steps are executed: providing a substrate having on its surface contact pads and a dielectric mold provided with at least one trench leaving exposed the contact pads; forming a first conductive layer on side walls of the trench in a top region of the trench the conductive layer being without contact to the contact pads; depositing a first dielectric layer; depositing a second conductive layer on the contact pad and on the side walls of the trench; depositing a second dielectric layer; depositing a third conductive layer; and forming a vertical plug interconnecting the first conductive layer and the third conductive layer.