Patents by Inventor Ognian N. Dimov

Ognian N. Dimov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • THERMALLY CURED UNDERLAYER FOR LITHOGRAPHIC APPLICATION
    Publication number: 20120178871
    Abstract: An etch resistant thermally curable Underlayer composition for use in a multiplayer lithographic process for producing a photolithographic bilayer coated substrate, the composirion being a composition of: (a) a polymer comprising repeating units of Structure I, II and III (b) at least one crosslinking agent; (c) at least one thermal acid generator; and (d) at least one solvent.
    Type: Application
    Filed: March 21, 2012
    Publication date: July 12, 2012
    Inventors: Binod B. De, Ognian N. Dimov, Stephanie J. Dilocker
  • Thermally cured underlayer for lithographic application
    Patent number: 8153346
    Abstract: An etch resistant thermally curable Underlayer composition for use in a multiplayer lithographic process for producing a photolithographic bilayer coated substrate, the composition being a composition of: (a) a polymer comprising repeating units of Structure I, II and III (b) at least one crosslinking agent; (c) at least one thermal acid generator; and (d) at least one solvent.
    Type: Grant
    Filed: February 20, 2008
    Date of Patent: April 10, 2012
    Assignee: FUJIFILM Electronic Materials, U.S.A., Inc.
    Inventors: Binod B. De, Ognian N. Dimov, Stephanie J. Dilocker
  • CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION
    Publication number: 20100304299
    Abstract: A photoresist composition. The composition has the following: (a) one or more resin binders that include one or more acid sensitive groups and that are substantially free of phenolic groups protected by acetal or ketal groups; (b) one or more photo acid generators, that, upon exposure to a source of high energy, decompose and generate a photoacid strong enough to remove the one or more acid sensitive groups; (c) one or more ionic non-photosensitive additives including an iminium salt; and (d) one or more solvents. There is also a process for patterning relief structures on a substrate employing the photoresist composition.
    Type: Application
    Filed: June 1, 2010
    Publication date: December 2, 2010
    Inventors: Ognian N. Dimov, Binod B. De
  • THERMALLY CURED UNDERLAYER FOR LITHOGRAPHIC APPLICATION
    Publication number: 20080206676
    Abstract: An etch resistant thermally curable Underlayer composition for use in a multiplayer lithographic process for producing a photolithographic bilayer coated substrate, the composition being a composition of: (a) a polymer comprising repeating units of Structure I, II and III (b) at least one crosslinking agent; (c) at least one thermal acid generator; and (d) at least one solvent.
    Type: Application
    Filed: February 20, 2008
    Publication date: August 28, 2008
    Inventors: Binod B. De, Ognian N. Dimov, Stephanie J. Dilocker
  • PHOTOSENSITIVE COMPOSITIONS EMPLOYING SILICON-CONTAINING ADDITIVES
    Publication number: 20080199805
    Abstract: A photosensitve composition exhibiting high resolution and enhanced, tunable O2 plasma etch resistance comprising a silicon-containing base polymer, a silicon-containing additive, a photoacid generator and solvent is provided. A method of forming a patterned resist film is also provided.
    Type: Application
    Filed: February 8, 2008
    Publication date: August 21, 2008
    Inventors: IL'YA RUSHKIN, OGNIAN N. DIMOV, SANJAY MALIK, BINOD B. DE
  • Copolymer, photoresist compositions thereof and deep UV bilayer system thereof
    Patent number: 6916543
    Abstract: Novel copolymers suitable for forming the top layer photoimagable coating in a deep U V. particularly a 193 nm and 248 nm, bilayer resist system providing high resolution photolithography. Chemically amplified photoresist composition and organosilicon moieties suitable for use in the binder resin for photoimagable etching resistant photoresist composition that is suitable as a material for use in ArF and KrF photolithography using the novel copolymers.
    Type: Grant
    Filed: October 31, 2003
    Date of Patent: July 12, 2005
    Assignee: Arch Specialty Chemicals, Inc.
    Inventors: Binod B. De, Sanjay Malik, Stephanie J. Dilocker, Ognian N. Dimov
  • Novel copolymer, photoresist compositions thereof and deep UV bilayer system thereof
    Publication number: 20040137362
    Abstract: Novel copolymers suitable for forming the top layer photoimagable coating in a deep UV, particularly a 193 nm and 248 nm, bilayer resist system providing high resolution photolithography. Chemically amplified photoresist composition and organosilicon moieties suitable for use in the binder resin for photoimagable etching resistant photoresist composition that is suitable as a material for use in ArF and KrF photolithography using the novel copolymers.
    Type: Application
    Filed: October 31, 2003
    Publication date: July 15, 2004
    Applicant: ARCH SPECIALTY CHEMICALS, INC.
    Inventors: Binod B. De, Sanjay Malik, Stephanie J. Dilocker, Ognian N. Dimov