Abstract: A thin film transistor substrate of horizontal electric field type includes: a gate line and a first common line formed on a substrate to be in parallel to each other; a data line crossing the gate line and the first common line with a gate insulating film therebetween to define a pixel area; a second common line crossing the first common line having the gate insulating film therebetween; a thin film transistor connected to the gate line and the data line; a common electrode extending from the second common line in said pixel area; a pixel electrode that is parallel to the common electrode and the second common line; a protective film for covering the thin film transistor; a gate pad having a lower gate pad electrode connected to an upper gate pad electrode through a first contact hole; a common pad having a lower common pad electrode connected to an upper common pad electrode through a second contact hole; and a data pad having a lower data pad electrode connected to an upper data pad electrode provided with

Abstract: A liquid crystal display device and a method of fabrication thereof that simplify a fabrication process of the LCD and improve contact resistance properties. A liquid crystal display device according to an embodiment of the present invention includes a substrate; a TFT (thin film transistor) on the substrate, the TFT having a gate electrode, a source electrode and a drain electrode; a passivation layer having a contact hole near the drain electrode on the substrate; a metal layer on the drain electrode, the metal layer deposited through the contact hole; and a pixel electrode formed on the substrate, the pixel electrode being electrically connected to the drain electrode via the metal layer.

Abstract: A method and an apparatus of fabricating a liquid crystal display device adapted to improve a lift-off efficiency are disclosed. The liquid crystal display device is also disclosed. The method includes forming a first thin film on a substrate; forming a photo-resist pattern on the first thin film; etching the first thin film using the photo-resist pattern as a mask; forming a second thin film on the substrate having the photo-resist pattern; forming a plurality of stripper infiltration paths; and removing the photo-resist pattern and the second thin film using a stripper within the stripper infiltration paths. The device includes two substrates facing each other; a liquid crystal layer; data lines and gate lines that cross each other to define pixel regions; thin film transistors; pixel electrodes connected to the thin film transistors; and an inorganic layer in each pixel region, wherein the inorganic layer includes a plurality of cracks.

Abstract: An apparatus and method for rubbing an alignment layer of an LCD device is disclosed. The alignment layer is rubbed over an entire surface of a substrate at uniform pressure and dust or particle is not adsorbed into the alignment layer during rubbing process. The apparatus for rubbing an alignment layer of an LCD device includes a rubbing means to rub the alignment layer while the rubbing means is rotated along one direction to contact a surface of the alignment layer formed on a substrate, and a liquid jet to jet liquid when the alignment layer is rubbed by the rubbing means.

Abstract: A manufacturing method of an electro line for a liquid crystal display device includes depositing a barrier layer made of a conducting material on a substrate, depositing a copper layer (Cu) on the barrier layer, wet-etching the Cu layer using a first etchant, and dry-etching the barrier layer using a second etchant using the wet-etched Cu layer as an etch mask.

Abstract: A liquid crystal display (LCD) panel is fabricated with a reduced number of mask processes and includes a thin film transistor (TFT) array substrate and a color filter array substrate. The TFT array substrate includes gate and data lines insulatively crossing each other to define a pixel area, a TFT provided at the crossing of the gate and data lines, a passivation film protecting the TFT, a pixel electrode partially overlapped by the TFT, a gate pad connected to the gate line, and a data pad connected to the data line. The gate line, the gate and data pads, and the pixel electrode include a transparent conductive material. A gate metal material is on the transparent conductive material where the TFT partially overlaps the pixel electrode. The passivation film over the gate and data pads is removed to expose the transparent conductive material included within the gate and data pads.

Abstract: An etching solution for a multiple layer of copper and molybdenum includes: about 5% to about 30% by weight of a hydrogen peroxide; about 0.5% to about 5% by weight of an organic acid; about 0.2% to about 5% by weight of a phosphate; about 0.2% to about 5% by weight of a first additive having nitrogen; about 0.2% to about 5% by weight of a second additive having nitrogen; about 0.01% to about 1.0% by weight of a fluoric compound; and de-ionized water making a total amount of the etching solution 100% by weight.

Abstract: A thin film transistor substrate structure for using a horizontal electric field includes a substrate; a gate line and a first common line formed on the substrate parallel to each other from a first conductive layer; a gate insulating film formed on the substrate, the gate line, and the first common line; a data line formed from a second conductive layer on the gate insulating film crossing the gate line and the common line with the gate insulating film therebetween to define a pixel area; a thin film transistor connected to the gate line and the data line; a protective film covering the data line and the thin film transistor; a common electrode formed from a third conductive layer connected to the common line through a hole passing through the protective film and the gate insulating film; and a pixel electrode formed from the second conductive layer connected to the thin film transistor to define a horizontal electric field between the pixel electrode and the common electrode.

Abstract: A method for manufacturing a printing plate to acheive a precise and fine pattern by minimizing a variation of etching critical dimension is disclosed. The method uses a hard mask having an opening on an insulating substrate to form a first trench having a first depth in the insulating substrate. A first etching stopper and a first photoresist may be applied on a surface of the insulating substrate including the first trench for patterning the first photoresist by exposing the first photoresist. Likewise, a second and third trench may be formed.

Abstract: An etching solution for a multiple layer of copper and molybdenum includes: about 5% to about 30% by weight of a hydrogen peroxide; about 0.5% to about 5% by weight of an organic acid; about 0.2% to about 5% by weight of a phosphate; about 0.2% to about 5% by weight of a first additive having nitrogen; about 0.2% to about 5% by weight of a second additive having nitrogen; about 0.01% to about 1.0% by weight of a fluoric compound; and de-ionized water making a total amount of the etching solution 100% by weight.

Abstract: A method for manufacturing a printing plate is realizes a precise and fine pattern by minimizing a variation of etching critical dimension. The method includes forming a hard mask having an opening on an insulating substrate; forming a first trench having a first depth in the insulating substrate using the hard mask; coating, patterning and developing a first photoresist over an entire surface of the insulating substrate including the hard mask; and forming at least a second trench having a second depth in the insulating substrate using the hard mask, wherein the second depth is deeper than the first depth.

Abstract: A composition for removing a copper-compatible resist includes about 10 to 30% by weight of an amine compound solvent, the amine compound solvent including an alkanol amine, about 10 to 80% by weight of a glycol group solvent, about 9.5 to 80% by weight of a polar solvent, and about 0.5 to 10% by weight of a corrosion inhibitor.

Abstract: An in plane switching (IPS) mode liquid crystal display (LCD) panel is fabricated with a reduced number of mask processes and includes a thin film transistor (TFT) array substrate with a TFT provided at a crossing of gate and data lines, a protective film protecting the TFT, a pixel electrode connected to the TFT, a common line substantially parallel to the pixel electrode, a common electrode connected to the common line to generate a horizontal electric field with the pixel electrode, and a pad including a transparent conductive material and connected to the gate line, the data line and/or the common line. A color filter array substrate is joined to, and overlaps a portion of, the TFT array substrate. Portions of the protective film where the color filter array substrate which do not overlap the TFT array substrate are removed to expose the transparent conductive material included in the pad.

Abstract: A liquid crystal display device according to an embodiment of the present invention includes: a gate line formed on a substrate; a data line to provide a pixel area by crossing the gate line with a gate insulating film therebetween; a common line formed in parallel to the gate line; a thin film transistor connected to the gate line and the data line; a passivation film formed to cover the thin film transistor; a contact hole which penetrates the passivation film; a pixel electrode connected with the thin film transistor; and a common electrode connected with the common line to form a horizontal electric field with the pixel electrode, and wherein at lease one of the gate line, the data line, the common line, the pixel electrode and the common electrode is composed of a first conductive layer and a second conductive layer which is formed to cover the first conductive layer by being extended more outward than the first conductive layer, and is formed to have a border with the passivation film within the contact

Abstract: A color filter substrate for a liquid crystal display device and method of fabricating the color filter substrate are provided. The color filter substrate includes a base substrate having a transmissive portion and a reflective portion, the transmissive portion having a groove, a color filter layer on the base substrate, and a black matrix on the color filter layer.

Abstract: A method for fabricating color filter layer of an LCD comprises forming a plurality of black matrixes separated at certain intervals on a color filter substrate, and forming R, G and B color filter layers by using a plurality of needles between the plurality of black matrixes on the color filter substrate.

Abstract: A method of repairing a flat panel display device including first and second substrates and at least one particle on one of the first and second substrates includes forming at least one recess on the other of the first and second substrate corresponding to the at least one particle, filling the at least recess with resin, and irradiating polarized ultraviolet light to the resin.

Abstract: A thin film transistor substrate structure for using a horizontal electric field includes a substrate; a gate line and a first common line formed on the substrate parallel to each other from a first conductive layer; a gate insulating film formed on the substrate, the gate line, and the first common line; a data line formed from a second conductive layer on the gate insulating film crossing the gate line and the common line with the gate insulating film therebetween to define a pixel area; a thin film transistor connected to the gate line and the data line; a protective film covering the data line and the thin film transistor; a common electrode formed from a third conductive layer connected to the common line through a hole passing through the protective film and the gate insulating film; and a pixel electrode formed from the second conductive layer connected to the thin film transistor to define a horizontal electric field between the pixel electrode and the common electrode.

Abstract: The present invention discloses a method of manufacturing a thin film transistor, including: preparing a substrate and a mixed solution, the mixed solution having a reductant and a first metal; forming a photoresist pattern on the substrate; etching a portion of the substrate to form a groove using the photoresist pattern as a mask; depositing a second metal on the substrate, a height of the second metal being smaller than a depth of the groove; removing the photoresist pattern on the substrate and the second metal on the photoresist other than in the groove; and forming the first metal on the second metal in the groove by submerging the substrate in the mixed solution.

Abstract: A liquid crystal display (LCD) panel is fabricated with a reduced number of mask processes and includes a thin film transistor (TFT) array substrate and a color filter array substrate. The TFT array substrate includes gate and data lines insulatively crossing each other to define a pixel area, a TFT provided at the crossing of the gate and data lines, a passivation film protecting the TFT, a pixel electrode partially overlapped by the TFT, a gate pad connected to the gate line, and a data pad connected to the data line. The gate line, the gate and data pads, and the pixel electrode include a transparent conductive material. A gate metal material is on the transparent conductive material where the TFT partially overlaps the pixel electrode. The passivation film over the gate and data pads is removed to expose the transparent conductive material included within the gate and data pads.