Abstract: A manufacturing method of an electro line for a liquid crystal display device includes depositing a barrier layer made of a conducting material on a substrate, depositing a copper layer (Cu) on the barrier layer, wet-etching the Cu layer using a first etchant, and dry-etching the barrier layer using a second etchant using the wet-etched Cu layer as an etch mask.

Abstract: An array substrate for a transflective liquid crystal display device, including a substrate; at least one gate line and at least one gate electrode formed on the transparent substrate; a gate-insulating layer formed over the at least one gate line and the at least one gate electrode; a silicon layer formed on the gate-insulating layer, the silicon layer being positioned above the at least one gate electrode; a source electrode and a drain electrode formed on the silicon layer and spaced apart from each other with the silicon layer overlapped therebetween, wherein the at least one gate electrode, the source electrode, the drain electrode, and the silicon layer define a thin film transistor (TFT); at least one data line; a first passivation layer covering the at least one data line; a transparent electrode formed on the first passivation layer; and a reflective electrode formed on the transparent electrode.

Abstract: A composition for removing a copper-compatible resist includes about 10% to about 30% by weight of an amine compound, about 10% to about 80% by weight of a glycolether compound, and about 10% to about 80% by weight of a polar solvent.

Abstract: An etching solution for etching one of a copper single metal layer and a copper (Cu)/titanium (Ti) double metal layer that serves as one of a gate electrode, a source electrode, and a drain electrode of a thin film transistor for a liquid crystal display (LCD) device includes oxone, fluoric compounds, one of a reducing agent and a weak oxidizing agent, an etching rate restrainer, KHF2, and water.

Abstract: An array substrate for a transflective liquid crystal display device, including a substrate; at least one gate line and at least one gate electrode formed on the transparent substrate; a gate-insulating layer formed over the at least one gate line and the at least one gate electrode; a silicon layer formed on the gate-insulating layer, the silicon layer being positioned above the at least one gate electrode; a source electrode and a drain electrode formed on the silicon layer and spaced apart from each other with the silicon layer overlapped therebetween, wherein the at least one gate electrode, the source electrode, the drain electrode, and the silicon layer define a thin film transistor (TFT); at least one data line; a first passivation layer covering the at least one data line; a transparent electrode formed on the first passivation layer; and a reflective electrode formed on the transparent electrode.

Abstract: A color filter substrate for a liquid crystal display device includes: a substrate having a transmissive portion and a reflective portion, the transmissive portion having a groove; a black matrix on the substrate; and a color filter layer on the black matrix and on the substrate. In another aspect, a color filter substrate for a liquid crystal display device includes: a substrate having a transmissive portion and a reflective portion; a black matrix on the substrate; a plurality of buffer patterns at the reflective portion, the plurality of buffer patterns having a substantially uneven shape; and a color filter layer at the transmissive and reflective portions.

Abstract: A method of manufacturing an LCD device is disclosed, which can improve yield by preventing occurrence of a contact failure between a transparent conductive film and a pad region (gate and data regions). In this method, amorphous transparent conductive films connected to a drain electrode, a gate pad and a data pad are formed of a transparent conductive material.

Abstract: A liquid crystal display device includes a substrate, a gate electrode on the substrate, an insulating layer on the gate electrode, a semiconductor layer on the insulating layer, an ohmic contact layer on the semiconductor layer, source and drain electrodes on the ohmic contact layer, a protective layer on the source and drain electrodes, the protective layer having a hole exposing a portion of one of the source and drain electrodes, a conductive electrode on the protective layer and electrically contacting the one of the source and drain electrodes, and a contact layer between the one of the source and drain electrodes and the conductive electrode.