Abstract: Systems and methods for acquiring measurements of structures of a bonded sample are disclosed. Such systems and methods may include determining a first registration measurement of a first registration structure and a first interface target structure of a first sample, and a second registration measurement of a second sample prior to coupling the samples together. Such systems and methods may include, after such a coupling of the samples, determining a third registration measurement of the coupled sample at least partially by measuring the first registration structure through the top face of the first sample. Such systems and methods may include acquiring an overlay measurement based on the first registration measurement, the second registration measurement, and the third registration measurement. Such systems and methods may include adjusting an inter-sample coupling recipe based on the overlay measurement, where the inter-sample coupling recipe may include a final bonding recipe.

Abstract: An overlay target may include a first bonded substrate arranged on a first layer. The overlay target may include a second bonded substrate arranged on a second layer. The overlay target may include a third bonded substrate arranged on a third layer, where each bonded substrate includes one or more features embedded in the respective bonded substrate.

Abstract: The system includes a stage configured to support a workpiece and a plurality of optical heads arranged above the stage. Each optical head includes a camera configured to capture a first image of one of a plurality of targets defined on a surface of the workpiece positioned along an optical axis of the camera and a motion mechanism configured to translate the optical head along three axes relative to the stage and rotate the optical head along two axes orthogonal to the optical axis. For each optical head, a processor determines a corrective movement of the optical head based on a misalignment of the optical axis of the camera relative to the target in a first image of the target captured by the camera, and sends instructions to the motion mechanism to move the optical head according to the corrective movement to align the optical axis with the target.

Abstract: A metrology system includes an imaging system. The imaging system may include an objective lens. The metrology system may include one or more detectors. The metrology system may include an objective positioning stage structurally coupled to the objective lens and configured to adjust a focal plane of at least one of the one or more detectors via movement along an optical axis of the metrology system. The metrology system may include one or more proximity sensors configured to measure lateral positions of a stage element as the objective positioning stage moves along the optical axis. The metrology system may be configured to determine a metrology measurement associated with a target on a sample using the images and lateral positions of the stage element when implementing a metrology recipe.

Abstract: A system for target centering detection may be configured receive one or more acquisition images of a sample from an overlay metrology sub-system and determine, using a machine learning-based centering model, one or more stage correctables based on the received one or more acquisition images. The system may be configured to cause a sample stage of the overlay metrology sub-system to adjust a stage position based on the determined one or more stage correctables and receive one or more measurement images of the sample from the overlay metrology sub-system based on the adjusted stage position of the sample stage. The system may then be configured to determine one or more overlay measurements based on the received one or more measurement images.

Abstract: A measurement system may include two or more sets of optical sub-systems to simultaneously generate measurement data on two or more samples, a coarse translation stage providing motion along a plane, two or more fine translation stages disposed on the coarse translation stage arranged in a common pattern as the two or more sets of optical sub-systems, where each of the fine translation stages provides motion along the plane and is arranged to position one of the two or more samples under one of the two or more sets of optical sub-systems. The system may further include a controller to independently direct each of the fine translation stages and the associated one of the optical sub-systems to generate measurement data for the respective samples, and generate one or more measurements for the samples based on the associated measurement data.

Abstract: A method includes identifying a printing location of a first set of alignment marks on a wafer outside a geometric shadow defined by a numerical aperture and a die height of a die. The method includes fabricating an overlay metrology target by printing the first set of alignment marks based on the identified print location and printing a second set of alignment marks on a surface of the die. The method includes identifying a metrology recipe including a set of measurement parameters, where the set of measurement parameters include at least a focal position of an objective lens. The focal position of the objective lens may be a predetermined distance below a top surface of the die defined by a maximal numerical aperture and the die height of the die. The method includes measuring overlay of the overlay metrology target in accordance with the identified metrology recipe.

Abstract: A system and method for generating a quality parameter value of a semiconductor device wafer (SDW), during fabrication thereof, the method including designating a plurality of measurement site sets (MSSs) on the SDW, each of the MSSs including a first measurement-orientation site (FMS) and a second measurement-orientation site (SMS), the FMS and the SMS being different measurement sites on the SDW, generating a first measurement-orientation quality parameter dataset (FMQPD) by measuring features formed within each the FMS of at least one of the MSSs in a first measurement orientation, generating a second measurement-orientation quality parameter dataset (SMQPD) by measuring features formed within each the SMS of the at least one of the MSSs in a second measurement orientation and generating at least one tool-induced-shift (TIS)-ameliorated quality parameter value (TAQPV), at least partially based on the FMQPD and the SMQPD.

Abstract: Systems and methods for acquiring measurements of structures of a bonded sample are disclosed. Such systems and methods may include determining a first registration measurement of a first registration structure and a first interface target structure of a first sample, and a second registration measurement of a second sample prior to coupling the samples together. Such systems and methods may include, after such a coupling of the samples, determining a third registration measurement of the coupled sample at least partially by measuring the first registration structure through the top face of the first sample. Such systems and methods may include acquiring an overlay measurement based on the first registration measurement, the second registration measurement, and the third registration measurement. Such systems and methods may include adjusting an inter-sample coupling recipe based on the overlay measurement, where the inter-sample coupling recipe may include a final bonding recipe.

Abstract: A metrology system may include an imaging sub-system including one or more lenses and a detector to image a sample, where the sample includes metrology target elements on two or more sample layers. The metrology system may further include a controller to determine layer-specific imaging configurations of the imaging sub-system to image the metrology target elements on the two or more sample layers within a selected image quality tolerance, where each layer-specific imaging configuration includes a selected configuration of one or more components of the imaging sub-system. The controller may further receive, from the imaging sub-system, one or more images of the metrology target elements on the two or more sample layers generated using the layer-specific imaging configurations. The controller may further provide a metrology measurement based on the one or more images of the metrology target elements on the two or more sample layers.

Abstract: A metrology system includes an imaging system. The imaging system may include an objective lens. The metrology system may include one or more detectors. The metrology system may include an objective positioning stage structurally coupled to the objective lens and configured to adjust a focal plane of at least one of the one or more detectors via movement along an optical axis of the metrology system. The metrology system may include one or more proximity sensors configured to measure lateral positions of a stage element as the objective positioning stage moves along the optical axis. The metrology system may be configured to determine a metrology measurement associated with a target on a sample using the images and lateral positions of the stage element when implementing a metrology recipe.

Abstract: A system and method for generating a quality parameter value of a semiconductor device wafer (SDW), during fabrication thereof, the method including designating a plurality of measurement site sets (MSSs) on the SDW, each of the MSSs including a first measurement-orientation site (FMS) and a second measurement-orientation site (SMS), the FMS and the SMS being different measurement sites on the SDW, generating a first measurement-orientation quality parameter dataset (FMQPD) by measuring features formed within each the FMS of at least one of the MSSs in a first measurement orientation, generating a second measurement-orientation quality parameter dataset (SMQPD) by measuring features formed within each the SMS of the at least one of the MSSs in a second measurement orientation and generating at least one tool-induced-shift (TIS)-ameliorated quality parameter value (TAQPV), at least partially based on the FMQPD and the SMQPD.

Abstract: A method and system for measuring misregistration between different layers of a semiconductor device, the method including providing a set of pupil inaccuracy scalable basis elements (PISBEs) relating to a plurality of patterned semiconductor device wafers (PSDWs), generating a single pupil image of a site on a PSDW, the PSDW being one of the plurality of PSDWs, by taking a single measurement of the site, the single pupil image including a plurality of site-specific pixels, calculating a set of site-specific pupil inaccuracy scalable basis element scaling factors (PISBESFs) for the single pupil image using the set of PISBEs and the plurality of site-specific pixels and calculating a site-specific misregistration value (SSMV) using the set of PISBEs and the set of site-specific PISBESFs.

Abstract: A metrology system is disclosed, in accordance with one or more embodiments of the present disclosure. The metrology system includes a stage configured to secure a sample, one or more diffraction-based overlay (DBO) metrology targets disposed on the sample. The metrology system includes a light source and one or more sensors. The metrology system includes a set of optics configured to direct illumination light from the light source to the one or more DBO metrology targets of the sample, the set of optics including a half-wave plate, the half-wave plate selectively insertable into an optical path such that the half-wave plate selectively passes both illumination light from an illumination channel and collection light from a collection channel, the half-wave plate being configured to selectively align an orientation of linearly polarized illumination light from the light source to an orientation of a grating of the one or more DBO metrology targets.

Abstract: A method and system for measuring misregistration between different layers of a semiconductor device, the method including providing a set of pupil inaccuracy scalable basis elements (PISBEs) relating to a plurality of patterned semiconductor device wafers (PSDWs), generating a single pupil image of a site on a PSDW, the PSDW being one of the plurality of PSDWs, by taking a single measurement of the site, the single pupil image including a plurality of site-specific pixels, calculating a set of site-specific pupil inaccuracy scalable basis element scaling factors (PISBESFs) for the single pupil image using the set of PISBEs and the plurality of site-specific pixels and calculating a site-specific misregistration value (SSMV) using the set of PISBEs and the set of site-specific PISBESFs.

Abstract: A metrology system is disclosed, in accordance with one or more embodiments of the present disclosure. The metrology system includes a stage configured to secure a sample, one or more diffraction-based overlay (DBO) metrology targets disposed on the sample. The metrology system includes a light source and one or more sensors. The metrology system includes a set of optics configured to direct illumination light from the light source to the one or more DBO metrology targets of the sample, the set of optics including a half-wave plate, the half-wave plate selectively insertable into an optical path such that the half-wave plate selectively passes both illumination light from an illumination channel and collection light from a collection channel, the half-wave plate being configured to selectively align an orientation of linearly polarized illumination light from the light source to an orientation of a grating of the one or more DBO metrology targets.

Abstract: A spectral filter includes a curved filtering element including a concave surface forming a portion of a sphere. The concave surface may be positioned to receive light diverging from an output face of an optical fiber located at a first location proximate to a center of the sphere corresponding to the concave surface. The concave surface may transmit a first portion of a spectrum of the light. The concave surface may further reflect and focus a second portion of the spectrum to a second location proximate to the center of the sphere. The spectral filter may further include a collector to direct the second portion of the spectrum away from the output face of the optical fiber.

Abstract: An illumination source may include two or more input light sources, a collector, and any combination of a beam uniformizer, a speckle reducer, or any number of output fibers to provide a selected illumination etendue. The collector may include one or more lenses to combine illumination from the two or more input light sources into an illumination beam, where the illumination from the two or more input light sources occupy different portions of an input aperture of the collector. The beam uniformizer may include a first noncircular-core fiber to receive the illumination beam, a second noncircular-core fiber, and one or more coupling lenses to relay a far-field distribution of the illumination beam from the first noncircular-core fiber to an input face of the second noncircular-core fiber to provide output light with uniform near-field and far-field distributions.

Abstract: A beamsplitter includes a substrate formed from a material transparent to wavelengths of light at least above a selected cutoff wavelength and reflective structures distributed across a surface of the substrate. The reflective structures split incident light having wavelengths above the selected cutoff wavelength into a reflected beam formed from portions of the incident light reflected from the reflective structures and a transmitted beam formed from portions of the incident light transmitted through the substrate. A splitting ratio of a power of the reflected beam to a power of the transmitted beam is based on a ratio of surface area of the reflective surfaces to an area of the incident light on the substrate. Separation distances between neighboring reflective structures are smaller than the cutoff wavelength such that diffracted power of the incident light having wavelengths above the selected cutoff wavelength is maintained below a selected tolerance.

Abstract: Methods are provided for deriving a partially continuous dependency of metrology metric(s) on recipe parameter(s), analyzing the derived dependency, determining a metrology recipe according to the analysis, and conducting metrology measurement(s) according to the determined recipe. The dependency may be analyzed in form of a landscape such as a sensitivity landscape in which regions of low sensitivity and/or points or contours of low or zero inaccuracy are detected, analytically, numerically or experimentally, and used to configure parameters of measurement, hardware and targets to achieve high measurement accuracy. Process variation is analyzed in terms of its effects on the sensitivity landscape, and these effects are used to characterize the process variation further, to optimize the measurements and make the metrology both more robust to inaccuracy sources and more flexible with respect to different targets on the wafer and available measurement conditions.