Abstract: The invention is related to a method of producing a semiconductor structure comprising the steps of: fabricating a gate stack structure and oxidizing at least a portion of the gate stack structure's sidewalls, wherein the step of oxidizing is carried out at a temperature below 500° C. using a process gas which comprises oxygen radicals.

Abstract: In a method of forming an insulating layer on a silicon substrate, the silicon substrate is arranged inside a process chamber. An oxide layer is formed on the substrate's surface. An electrical field is applied and an oxygen particles containing plasma is provided above the substrate's surface. The electrical field accelerates the oxygen particles in the direction of the surface so that the oxygen particles penetrate inside the substrate and form said oxide layer. Thereafter, the stoichiometry of the oxide layer is modified. A nitrogen particles containing plasma is provided above the substrate's surface. The electrical field accelerates the nitrogen particles in the direction of the surface so that the nitrogen particles penetrate inside the oxide layer and modify the stoichiometry of the oxide layer. The step of forming the oxide layer and the step of modifying the stoichiometry are carried out inside the same process chamber.

Abstract: A method of decreasing the density of dielectric interface traps in an integrated circuit device. In accordance with the teachings of the present invention, the method includes providing a semiconductor substrate, processing the semiconductor substrate to form an integrated circuit device, such as a field effect transistor including forming a dielectric layer, and heating the dielectric layer in an atmosphere comprising at least one gaseous halogen compound.

Abstract: An integrated circuit, which is formed on a semiconductor substrate and which comprises front-end-of-line processed electronic elements and a back-end-of-line processed wiring on top of the electronic elements. The wiring interconnects the electronic elements. The integrated circuit further comprises a highly UV-absorbing layer between the electronic elements and the wiring.

Abstract: Memory and method for fabricating it A memory formed as an integrated circuit in a semiconductor substrate and having storage capacitors and switching transistors. The storage capacitors are formed in the semiconductor substrate in a trench and have an outer electrode layer, which is formed around the trench, a dielectric intermediate layer, which is embodied on the trench wall, and an inner electrode layer, with which the trench is essentially filled, and the switching transistors are formed in the semiconductor substrate in a surface region and have a first source/drain doping region, a second source/drain doping region and an intervening channel, which is separated from a gate electrode by an insulator layer.

Abstract: The invention relates to a method of manufacturing a semiconductor device, in which a substrate is provided, a dielectric layer is formed on top of the substrate, an amorphous semiconductor layer id deposited on top of the dielectric layer, the amorphous semiconductor layer is doped, and a high temperature step to the amorphous layer is applied to form a crystallized layer out of the amorphous semiconductor.

Abstract: During a selective oxidation of gate structures that includes a polycrystalline silicon layer and a tungsten layer, which is known per se, a vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nonaqueous inert gas before and, if appropriate, after a treatment step with a hydrogen/water mixture.

Abstract: A configuration for measuring the concentration of contaminating particles at high time resolution in the mini environments of loading and unloading chambers of processing appliances in semiconductor fabrication includes a probe, a movement unit for the probe, a particle detector, vacuum pump and a control unit. Reaching critical layer thicknesses of disk carriers or boats in ovens, and maladjustments of handling systems for wafers, masks, flat panel displays and other disc-like objects can be detected in terms of the cause and quantified immediately. The movement unit moves the probe to a desired position in the loading and unloading chamber as a reaction to the positioning of the handling system. A method of operating the configuration is also provided.

Abstract: A stress relief layer between a single-crystal semiconductor substrate and a deposited silicon nitride layer or pad nitride is formed from thermally produced silicon nitride. The stress relief layer made from thermally produced silicon nitride replaces a silicon dioxide layer or pad oxide which is customary at this location for example in connection with mask layers. After patterning of a mask, which includes a protective layer portion formed from deposited silicon nitride, the material which is provided according to the invention for the stress relief layer reduces the restrictions imposed for subsequent process steps, such as for example wet-etching steps, acting both on the semiconductor substrate or structures in the semiconductor substrate and also on the stress relief layer.

Abstract: During a selective oxidation of gate structures that includes a polycrystalline silicon layer and a tungsten layer, which is known per se, a vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nonaqueous inert gas before and, if appropriate, after a treatment step with a hydrogen/water mixture.

Abstract: A configuration for measuring the concentration of contaminating particles at high time resolution in the mini environments of loading and unloading chambers of processing appliances in semiconductor fabrication includes a probe, a movement unit for the probe, a particle detector, vacuum pump and a control unit. Reaching critical layer thicknesses of disk carriers or boats in ovens, and maladjustments of handling systems for wafers, masks, flat panel displays and other disc-like objects can be detected in terms of the cause and quantified immediately. The movement unit moves the probe to a desired position in the loading and unloading chamber as a reaction to the positioning of the handling system. A method of operating the configuration is also provided.

Abstract: A wafer chuck for semiconductor wafer manufacturing has a surface for the accommodation of a semiconductor wafer. The surface has a concave shape. The wafer, especially with a diameter of more than 300 mm, normally has a concave or convex warpage according to tensile strength from deposited layers. By appropriate size of the concaveness of the chuck surface the perimeter edge of the wafer always touches the hot surface of the chuck first, so that the wafer is flattened, thereby avoiding a movement of the wafer on the hot chuck surface.

Abstract: A configuration for measuring a temperature of a semiconductor disk is described and contains a supporting device for holding the disk, and at least two digital camera monitoring systems for locating edges of the disk. A data processing unit is connected to the digital camera monitoring systems for monitoring disk edge movement. The digital camera monitoring systems are placed in the supporting device in different positions. The digital camera monitoring systems face toward the disk. The supporting device further has transparent windows placed in the surface of the supporting device that are oriented towards the disk. With this configuration, disk dimensional growth due to disk heating during a manufacturing process can be measured in order to derive a disk temperature. Thus, a precise disk temperature measurement with real time data acquisition can be performed.