Patents by Inventor Olaf Wunnicke

Olaf Wunnicke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210229981
    Abstract: A sensor package and a method for producing a sensor package are disclosed. In an embodiment a method for producing a sensor package includes providing a carrier including electric conductors, fastening a dummy die or interposer to the carrier, providing an ASIC device including an integrated sensor element and fastening the ASIC device to the dummy die or interposer.
    Type: Application
    Filed: April 12, 2021
    Publication date: July 29, 2021
    Inventors: Willem Frederik Adrianus Besling, Casper Van Der Avoort, Coenraad Cornelis Tak, Remco Henricus Wilhelmus Pijnenburg, Olaf Wunnicke, Hendrik Bouman
  • Publication number: 20210199528
    Abstract: A sensor arrangement and a method of operating a sensor arrangement are disclosed. In an embodiment, a sensor arrangement includes a pressure sensor realized as a capacitive pressure sensor, a capacitance-to-digital converter, a test circuit and a switching circuit coupling the capacitance-to-digital converter and the test circuit to the pressure sensor.
    Type: Application
    Filed: April 10, 2019
    Publication date: July 1, 2021
    Applicant: Sciosense B.V.
    Inventors: Alberto MACCIONI, Willem Frederik Adrianus BESLING, Olaf WUNNICKE, Casper van der AVOORT, Remco Henricus Wilhelmus PIJNENBURG, Anderson Pires SINGULANI
  • Publication number: 20210163282
    Abstract: In an embodiment a system includes a sensor including a base having a base electrode and a first membrane suspended above the base, wherein the first membrane has a first membrane electrode, wherein the first membrane is configured to deflect with respect to the base electrode in response to an environmental condition, and wherein the sensor is configured to measure a capacitance between the base electrode and the first membrane electrode. The system further includes a first device of the system configured to generate electrical interference signals, a first electrically conductive shield layer positioned between the sensor and the first device of the system, wherein the first electrically conductive shield layer defines a plurality of first apertures extending through the first electrically conductive shield layer and a dielectric material disposed in the plurality of first apertures.
    Type: Application
    Filed: April 25, 2019
    Publication date: June 3, 2021
    Inventors: Olaf Wunnicke, Frederik Willem Maurits Vanhelmont, Willem Frederik Adrianus Besling, Remco Henricus Wilhelmus Pijnenburg, Casper Van Der Avoort, Anderson Pires Singulani, Martijn Goossens
  • Patent number: 11001495
    Abstract: The sensor package comprises a carrier (1) including electric conductors (13), an ASIC device (6) and a sensor element (7), which is integrated in the ASIC device (6). A dummy die or interposer (4) is arranged between the carrier (1) and the ASIC device (6). The dummy die or interposer (4) is fastened to the carrier (1), and the ASIC device (6) is fastened to the dummy die or interposer (4).
    Type: Grant
    Filed: June 14, 2017
    Date of Patent: May 11, 2021
    Assignee: Sciosense B.V.
    Inventors: Willem Frederik Adrianus Besling, Casper Van Der Avoort, Coenraad Cornelis Tak, Remco Henricus Wilhelmus Pijnenburg, Olaf Wunnicke, Hendrik Bouman
  • Publication number: 20200361764
    Abstract: A die attachment to a support is disclosed. In an embodiment, a semiconductor package includes a support and a die attached to the support by an adhesive on a backside of the die, wherein the die includes a capacitive pressure sensor integrated on a CMOS read-out circuit, and wherein the adhesive covers only a part of the backside of the die.
    Type: Application
    Filed: November 16, 2018
    Publication date: November 19, 2020
    Inventors: Casper Van Der Avoort, Willem Frederik Adrianus Besling, Remco Henricus Wilhelmus Pijnenburg, Olaf Wunnicke, Coen Tak
  • Publication number: 20200348198
    Abstract: Capacitive pressure sensors and other devices are disclosed. In an embodiment a semiconductor device includes a first electrode, a cavity over the first electrode and a second electrode including a suspended membrane over the cavity and electrically conductive anchor trenches laterally surrounding the cavity, wherein the anchor trenches include an inner anchor trench and an outer anchor trench, the outer anchor trench having rounded corners.
    Type: Application
    Filed: November 16, 2018
    Publication date: November 5, 2020
    Inventors: Willem Frederik Adrianus Besling, Casper Van Der Avoort, Remco Henricus Wilhelmus Pijnenburg, Olaf Wunnicke, Jörg Siegert, Alessandro Faes
  • Publication number: 20190375628
    Abstract: The sensor package comprises a carrier (1) including electric conductors (13), an ASIC device (6) and a sensor element (7), which is integrated in the ASIC device (6). A dummy die or interposer (4) is arranged between the carrier (1) and the ASIC device (6). The dummy die or interposer (4) is fastened to the carrier (1), and the ASIC device (6) is fastened to the dummy die or interposer (4).
    Type: Application
    Filed: June 14, 2017
    Publication date: December 12, 2019
    Applicant: ams International AG
    Inventors: Willem Frederik Adrianus BESLING, Casper van der AVOORT, Coenraad Cornelis TAK, Remco Henricus Wilhelmus PIJNENBURG, Olaf WUNNICKE, Hendrik BOUMAN
  • Publication number: 20190234821
    Abstract: A semiconductor device comprises a substrate body, an environmental sensor, a cap body and a volume of gas. The environmental sensor and the volume of gas are arranged between the substrate body and the cap body in a vertical direction which is perpendicular to the main plane of extension of the substrate body, and at least one channel between the substrate body and the cap body connects the volume of gas with the environment of the semiconductor device such that the channel is permeable for gases.
    Type: Application
    Filed: October 2, 2017
    Publication date: August 1, 2019
    Inventors: Willem Frederik Adrianus BESLING, Casper VAN DER AVOORT, Coenraad Cornelis TAK, Remco Henricus Wilhelmus PIJNENBURG, Olaf WUNNICKE, Martijn GOOSSENS
  • Patent number: 9772245
    Abstract: A pressure sensor measures pressure by measuring the deflection of a MEMS membrane using a capacitive read-out method. There are two ways to implement the invention. One involves the use of an integrated Pirani sensor and the other involves the use of an integrated resonator, to function as a reference pressure sensor, for measuring an internal cavity pressure.
    Type: Grant
    Filed: March 6, 2013
    Date of Patent: September 26, 2017
    Assignee: ams International AG
    Inventors: Willem Frederik Adrianus Besling, Martijn Goossens, Jozef Thomas Martinus van Beek, Peter Gerard Steeneken, Olaf Wunnicke
  • Patent number: 9702958
    Abstract: A governing circuit for a magneto-transistor is disclosed. The magneto-transistor comprising a first and second collector. At least one emitter and at least one base. The governing circuit is configured to measure a first calibration current at the first collector of the magneto-transistor and a second calibration current at the second collector of the magneto-transistor, while a calibration base-emitter voltage is applied to the magneto-transistor. The magneto-transistor is also configured to measure a first measurement current at the first collector of the magneto-transistor and a second measurement current at the second collector of the magneto-transistor, while a measurement base-emitter voltage is applied to the magneto-transistor, wherein the measurement base-emitter voltage is different form the calibration base-emitter voltage and determine an output signal indicative of an applied magnetic field using the measured first and second measurement current and first and second calibration currents.
    Type: Grant
    Filed: February 29, 2012
    Date of Patent: July 11, 2017
    Assignee: NXP B.V.
    Inventors: Victor Zieren, Robert Hendrikus Margaretha Van Veldhoven, Olaf Wunnicke, Hans Paul Tuinhout
  • Patent number: 9696390
    Abstract: A differential magnetic field sensor system (10) is provided, in which offset cancelling for differential semiconductor structures in magnetic field sensors arranged close to each other is realized. The system (10) comprises a first, a second and a third magnetic field sensor (100, 200, 300), each of which is layouted substantially identically and comprises a, preferably silicon-on-insulator (SOI), surface layer portion (102) provided as a surface portion on a, preferably SOI, wafer and having a surface (104).
    Type: Grant
    Filed: June 16, 2015
    Date of Patent: July 4, 2017
    Assignee: NXP B.V.
    Inventors: Victor Zieren, Olaf Wunnicke, Klaus Reimann
  • Publication number: 20170016787
    Abstract: A pressure sensor measures pressure by measuring the deflection of a MEMS membrane using a capacitive read-out method. There are two ways to implement the invention. One involves the use of an integrated Pirani sensor and the other involves the use of an integrated resonator, to function as a reference pressure sensor, for measuring an internal cavity pressure.
    Type: Application
    Filed: March 6, 2013
    Publication date: January 19, 2017
    Inventors: Willem Frederik Adrianus Besling, Martijn Goossens, Jozef Thomas Martinus van Beek, Peter Gerard Steeneken, Olaf Wunnicke
  • Publication number: 20160365840
    Abstract: The present invention relates to a transducer (11) comprising a membrane (31) configured to change shape in response to a force, the membrane (31) having a first major surface (16) and a second major surface (17), a piezoelectric layer (18) formed over the first major surface (16) of the membrane (31), the piezoelectric layer (18) having an active portion, first and second electrodes (19) in contact with the piezoelectric layer (18), wherein an electric field between the first and second electrodes (19) determines the mechanical movement of the piezoelectric layer (18), support structures (40) at the second major surface (17) of the membrane (15) on adjacent sides of the active portion of the piezoelectric layer (18), at least part of the support structures (40) forming walls perpendicular, or at least not parallel, to the second major surface (17) of the membrane (31), so as to form a trench (41) of any shape underlying the active portion, so that an ultrasound transducer is obtained with a high output pr
    Type: Application
    Filed: August 25, 2016
    Publication date: December 15, 2016
    Inventors: MAREIKE KLEE, RUEDIGER MAUCZOK, HENRI MARIE JOSEPH BOOTS, NICO MARIS ADRIAAN DE WILD, BIJU KUMAR SREEDHARAN NAIR, OLAF WUNNICKE, WILLEM FRANKE PASVEER, DIRK VAN DE LAGEMAAT, PETER DIRKSEN
  • Patent number: 9440258
    Abstract: The present invention relates to a transducer (11) comprising—a membrane (31) configured to change shape in response to a force, the membrane (31) having a first major surface (16) and a second major surface (17), —a piezoelectric layer (18) formed over the first major surface (16) of the membrane (31), the piezoelectric layer (18) having an active portion, —first and second electrodes (19) in contact with the piezoelectric layer (18), wherein an electric field between the first and second electrodes (19) determines the mechanical movement of the piezoelectric layer (18), —support structures (40) at the second major surface (17) of the membrane (15) on adjacent sides of the active portion of the piezoelectric layer (18), at least part of the support structures (40) forming walls perpendicular, or at least not parallel, to the second major surface (17) of the membrane (31), so as to form a trench (41) of any shape underlying the active portion, so that an ultrasound transducer is obtained with a high output pr
    Type: Grant
    Filed: July 12, 2011
    Date of Patent: September 13, 2016
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Mareike Klee, Ruediger Mauczok, Henri Marie Joseph Boots, Nico Maris Adriaan De Wild, Biju Kumar Sreedharan Nair, Olaf Wunnicke, Willem Franke Pasveer, Dirk Van De Lagemaat, Peter Dirksen
  • Patent number: 9410839
    Abstract: A method and apparatus for measuring the rate of flow of an ion-containing fluid in a channel are disclosed herein. The apparatus includes a captive sensor operable to detect changes in capacitance value due to the deflection of the ions in the fluid by a magnetic field, and a processor operable to determine a flow speed of fluid from the detected change in capacitance value and a predetermined value of magnetic field strength. Such apparatus may be implemented using CMOS technology. The apparatus may operate in a magnetic field generated by a permanent magnet and measure the flow reliably.
    Type: Grant
    Filed: June 10, 2014
    Date of Patent: August 9, 2016
    Assignee: NXP B.V.
    Inventors: Friso Jedema, Casper van der Avoort, Stephan Heil, Kim Phan Le, Olaf Wunnicke
  • Patent number: 9383282
    Abstract: A MEMS pressure sensor wherein at least one of the electrode arrangements comprises an inner electrode and an outer electrode arranged around the inner electrode. The capacitances associated with the inner electrode and the outer electrode are independently measured and can be differentially measured. This arrangement enables various different read out schemes to be implemented and also enables improved compensation for variations between devices or changes in device characteristics over time.
    Type: Grant
    Filed: May 2, 2012
    Date of Patent: July 5, 2016
    Assignee: AMS INTERNATIONAL AG
    Inventors: Willem Frederik Adrianus Besling, Klaus Reimann, Peter Steeneken, Olaf Wunnicke, Reinout Woltjer
  • Patent number: 9331028
    Abstract: Substrate material is oxidized around side walls of a set of channels. A shielding structure means there is more oxide growth at the top than the bottom with the result that the non-oxidized substrate material area between the channels forms a tapered shape with a pointed tip at the top. These pointed substrate areas are then used to form cathodes.
    Type: Grant
    Filed: June 2, 2014
    Date of Patent: May 3, 2016
    Assignee: NXP B.V.
    Inventors: Michael In 'T Zandt, Olaf Wunnicke, Klaus Reimann
  • Patent number: 9236734
    Abstract: The invention provides a method of forming an electric field gap device, such as a lateral field emission ESD protection structure, in which a cathode layer is formed between dielectric layers. Anode channels are formed and they are lined with a sacrificial dielectric layer. Conductive anode pillars are formed in the anode channels, and then the sacrificial dielectric layer is etched away in the vicinity of the anode pillars. The etching leaves a suspended portion of the cathode layer which defines a lateral gap to an adjacent anode pillar. This portion has a sharp end face defined by the corners of the cathode layer and the lateral gap can be defined accurately as it corresponds to the thickness of the sacrificial dielectric layer.
    Type: Grant
    Filed: June 11, 2014
    Date of Patent: January 12, 2016
    Assignee: NXP B.V.
    Inventors: Michael in 't Zandt, Klaus Reimann, Olaf Wunnicke
  • Publication number: 20160003923
    Abstract: A differential magnetic field sensor system (10) is provided, in which offset cancelling for differential semiconductor structures in magnetic field sensors arranged close to each other is realized. The system (10) comprises a first, a second and a third magnetic field sensor (100, 200, 300), each of which is layouted substantially identically and comprises a, preferably silicon-on-insulator (SOI), surface layer portion (102) provided as a surface portion on a, preferably SOI, wafer and having a surface (104).
    Type: Application
    Filed: June 16, 2015
    Publication date: January 7, 2016
    Inventors: Victor Zieren, Olaf Wunnicke, Klaus Reimann
  • Patent number: 9190237
    Abstract: Embodiments of a method for forming a field emission diode for an electrostatic discharge device include forming a first electrode, a sacrificial layer, and a second electrode. The sacrificial layer separates the first and second electrodes. The method further includes forming a cavity between the first and second electrode by removing the sacrificial layer. The cavity separates the first and second electrodes. The method further includes depositing an electron emission material on at least one of the first and second electrodes through at least one access hole after formation of the first and second electrodes. The access hole is located remotely from a location of electron emission on the first and second electrode.
    Type: Grant
    Filed: April 24, 2014
    Date of Patent: November 17, 2015
    Assignee: NXP B.V.
    Inventors: Klaus Reimann, Olaf Wunnicke, Michael in 't Zandt