Abstract: A method to make light-emitting diode (LED) units include arranging LEDs in a pattern, forming an optically transparent spacer layer over the LEDs, forming an optically reflective layer over the LEDs, and singulating the LEDs into LED units. The method may further include, after forming the optically transparent spacer layer and before singulating the LEDs, forming a secondary light-emitting layer that conforms to the LEDs, cutting the LEDs to form LED groups having a same arrangement, spacing the LED groups on a support, and forming the optically reflective layer in spaces between the LED groups.

Abstract: A disclosed light-emitting device may provide white light with a cyan gap coinciding with a melanopic sensitivity range and thus having reduced melanopic content. The disclosed light-emitting device may include a light source providing violet or blue light with a peak wavelength under 450 nanometers (nm). The disclosed light-emitting device may include at least one down-converter coupled to and located downstream of the light source and configured with a long-wavelength onset to convert the spectrum of the violet or blue light to generate white light with a spectral power content in a 447-531 nm wavelength range that is less than or equal to 10% of a total spectral power content in a 380-780 nm wavelength range. The disclosed light-emitting device may be incorporated in a light engine system that further includes a control system that controls a drive current to the light-emitting device.

Abstract: A semiconductor light emitting device (100;200;300;400,400B,400C;500;600;700) may have a reflective side coating (120;220;320;420;520;620;720) disposed on a sidewall (118;215;315;415,435;515) of a semiconductor light emitting device structure. Such a device may be fabricated by dicing a semiconductor structure to separate a semiconductor light emitting device structure and then forming a reflective side coating (120;220;320;420;520;620;720) on a sidewall (118;215;315;415,435;515) of the separated semiconductor light emitting device structure.

Abstract: A light emitting device may comprise a cup having a wall extending from a first area of the cup to a second area of the cup. The wall is formed from or coated with a reflective material. The light emitting device may comprise a light extraction bridge extending beyond an outer diameter of at least a portion of the wall for directing light into the air. The light may be produced by an LED die mounted at the second area of the cup such that at least some of a light emitted from the LED die exits the cup, having been reflected from the wall and the light extraction bridge.

Abstract: A light emitting device may comprise a cup having a wall extending from a first area of the cup to a second area of the cup. The wall is formed from or coated with a reflective material. The light emitting device may comprise a light extraction bridge extending beyond an outer diameter of at least a portion of the wall for directing light into the air. The light may be produced by an LED die mounted at the second area of the cup such that at least some of a light emitted from the LED die exits the cup, having been reflected from the wall and the light extraction bridge.

Abstract: A method to make light-emitting diode (LED) units include arranging LEDs in a pattern, forming an optically transparent spacer layer over the LEDs, forming an optically reflective layer over the LEDs, and singulating the LEDs into LED units. The method may further include, after forming the optically transparent spacer layer and before singulating the LEDs, forming a secondary light-emitting layer that conforms to the LEDs, cutting the LEDs to form LED groups having a same arrangement, spacing the LED groups on a support, and forming the optically reflective layer in spaces between the LED groups.

Abstract: A method to make light-emitting diode (LED) units include arranging LEDs in a pattern, forming an optically transparent spacer layer over the LEDs, forming an optically reflective layer over the LEDs, and singulating the LEDs into LED units. The method may further include, after forming the optically transparent spacer layer and before singulating the LEDs, forming a secondary light-emitting layer that conforms to the LEDs, cutting the LEDs to form LED groups having a same arrangement, spacing the LED groups on a support, and forming the optically reflective layer in spaces between the LED groups.

Abstract: Light emitting die (300) comprising a plurality of light emitting elements (310A, 310B), each having a pair of bond pads (N1,P1 and N2,P2), wherein at least two diagonally opposite bond pads of adjacent light emitting elements on a die have their facing corners truncated (330) to enable a direct diagonal coupling of a complementary pair of diagonally opposite bond pads when the die is monted on a substrate on which an interconnection pattern is formed. By enabling diagonal as well as lateral coupling of the bond pads of multiple light emitting elements of a die, the multiple light emitting elements may be arranged in a variety of series and/or parallel configurations, thereby facilitating the use of the same die at different nominal operating voltages with a single interconnect layer on the substrate upon which the die is mounted.

Abstract: A disclosed light-emitting device may provide white light with a cyan gap coinciding with a melanopic sensitivity range and thus having reduced melanopic content. The disclosed light-emitting device may include a light source providing violet or blue light with a peak wavelength under 450 nanometers (nm). The disclosed light-emitting device may include at least one down-converter coupled to and located downstream of the light source and configured with a long-wavelength onset to convert the spectrum of the violet or blue light to generate white light with a spectral power content in a 447-531 nm wavelength range that is less than or equal to 10% of a total spectral power content in a 380-780 nm wavelength range. The disclosed light-emitting device may be incorporated in a light engine system that further includes a control system that controls a drive current to the light-emitting device.

Abstract: A device comprises a window layer and a light-directing structure comprising a porous semiconductor layer formed in an n-type region. The device comprises a semiconductor structure, disposed between the window layer and the light-directing structure, comprising a light emitting layer. An opening is formed in the semiconductor structure. A first metal layer is in direct contact with the light-directing structure. A dielectric layer is disposed over the first metal layer and in the opening. A second metal layer is disposed over the dielectric layer. A transparent conductive oxide is disposed between the p-type region and the window layer and in direct contact with the p-type region. A first hole is formed in the dielectric layer, wherein the first hole exposes the transparent conductive oxide such that the second metal layer is in direct contact with the transparent conductive oxide through the first hole.

Abstract: A method to make light-emitting diode (LED) units include arranging LEDs in a pattern, forming an optically transparent spacer layer over the LEDs, forming an optically reflective layer over the LEDs, and singulating the LEDs into LED units. The method may further include, after forming the optically transparent spacer layer and before singulating the LEDs, forming a secondary light-emitting layer that conforms to the LEDs, cutting the LEDs to form LED groups having a same arrangement, spacing the LED groups on a support, and forming the optically reflective layer in spaces between the LED groups.

Abstract: A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure is disposed between a window layer and a light-directing structure. The light-directing structure is configured to direct light toward the window layer; examples of suitable light-directing structures include a porous semiconductor layer and a photonic crystal. An n-contact is electrically connected to the n-type region and a p-contact is electrically connected to the p-type region. The p-contact is disposed in an opening formed in the semiconductor structure.

Abstract: Light emitting die (300) comprising a plurality of light emitting elements (310A, 310B), each having a pair of bond pads (N1,P1 and N2,P2), wherein at least two diagonally opposite bond pads of adjacent light emitting elements on a die have their facing corners truncated (330) to enable a direct diagonal coupling of a complementary pair of diagonally opposite bond pads when the die is monted on a substrate on which an interconnection pattern is formed. By enabling diagonal as well as lateral coupling of the bond pads of multiple light emitting elements of a die, the multiple light emitting elements may be arranged in a variety of series and/or parallel configurations, thereby facilitating the use of the same die at different nominal operating voltages with a single inter-connect layer on the substrate upon which the die is mounted.

Abstract: A disclosed light-emitting device may provide white light with a cyan gap coinciding with a melanopic sensitivity range and thus having reduced melanopic content. The disclosed light-emitting device may include a light source providing violet or blue light with a peak wavelength under 450 nanometers (nm). The disclosed light-emitting device may include at least one down-converter coupled to and located downstream of the light source and configured with a long-wavelength onset to convert the spectrum of the violet or blue light to generate white light with a spectral power content in a 447-531 nm wavelength range that is less than or equal to 10% of a total spectral power content in a 380-780 nm wavelength range. The disclosed light-emitting device may be incorporated in a light engine system that further includes a control system that controls a drive current to the light-emitting device.

Abstract: A semiconductor light emitting device (100;200;300;400,400B,400C;500;600;700) may have a reflective side coating (120;220;320;420;520;620;720) disposed on a sidewall (118;215;315;415,435;515) of a semiconductor light emitting device structure. Such a device may be fabricated by dicing a semiconductor structure to separate a semiconductor light emitting device structure and then forming a reflective side coating (120;220;320;420;520;620;720) on a sidewall (118;215;315;415,435;515) of the separated semiconductor light emitting device structure.

Abstract: A disclosed light-emitting device may provide white light with a cyan gap coinciding with a melanopic sensitivity range and thus having reduced melanopic content. The disclosed light-emitting device may include a light source providing violet or blue light with a peak wavelength under 450 nanometers (nm). The disclosed light-emitting device may include at least one down-converter coupled to and located downstream of the light source and configured with a long-wavelength onset to convert the spectrum of the violet or blue light to generate white light with a spectral power content in a 447-531 nm wavelength range that is less than or equal to 10% of a total spectral power content in a 380-780 nm wavelength range. The disclosed light-emitting device may be incorporated in a light engine system that further includes a control system that controls a drive current to the light-emitting device.

Abstract: A light emitting diode (LED) package includes an LED die includes a stack of semiconductor layers including an active region, and a wavelength converting element over the LED die. The wavelength converting element includes two or more non-flat surfaces that produce a desired angular color distribution pattern.

Abstract: In some embodiments of the invention, a device includes a substrate and a semiconductor structure. The substrate includes a wavelength converting element comprising a wavelength converting material disposed in a transparent material, a seed layer comprising a material on which III-nitride material will nucleate, and a bonding layer disposed between the wavelength converting element and the seed layer. The semiconductor structure includes a III-nitride light emitting layer disposed between an n-type region and a p-type region, and is grown on the seed layer.

Abstract: A device includes a reflector and a wavelength converting material disposed on the reflector. A backlight is disposed between the reflector and a surface to be illuminated, such as a liquid crystal display panel. The backlight includes a light source and a waveguide. The waveguide is configured to direct a majority of light from the light source toward the reflector. At least a portion of the light is converted by the wavelength converted material, reflected by the reflector, and incident on the surface to be illuminated.

Abstract: In some embodiments of the invention, a device includes a substrate and a semiconductor structure. The substrate includes a wavelength converting element comprising a wavelength converting material disposed in a transparent material, a seed layer comprising a material on which III-nitride material will nucleate, and a bonding layer disposed between the wavelength converting element and the seed layer. The semiconductor structure includes a III-nitride light emitting layer disposed between an n-type region and a p-type region, and is grown on the seed layer.