Abstract: A light emitting diode includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, and n- and p-contacts disposed on the n- and p-type regions. The light emitting layer is configured to emit light of a first peak wavelength. A wavelength converting material is positioned in a path of light emitted by the light emitting layer. The wavelength converting material is configured to absorb light of the first peak wavelength and emit light of a second peak wavelength. The light emitting diode is configured such that a light emission pattern from the light emitting diode complements a light emission pattern from the wavelength converting material.

Abstract: A light emitting diode (LED) package includes an LED die includes a stack of semiconductor layers including an active region, and a wavelength converting element over the LED die. The wavelength converting element includes two or more non-flat surfaces that produce a desired angular color distribution pattern.

Abstract: A device includes a reflector and a wavelength converting material disposed on the reflector. A backlight is disposed between the reflector and a surface to be illuminated, such as a liquid crystal display panel. The backlight includes a light source and a waveguide. The waveguide is configured to direct a majority of light from the light source toward the reflector. At least a portion of the light is converted by the wavelength converted material, reflected by the reflector, and incident on the surface to be illuminated.

Abstract: A semiconductor structure formed on a growth substrate and including a light emitting layer disposed between an n-type region and a p-type region is attached to a carrier by a connection that supports the semiconductor structure sufficiently to permit removal of the growth substrate. In some embodiments, the semiconductor structure is a flip chip device. The semiconductor structure may be attached to the carrier by, for example, a metal bond that supports almost the entire lateral extent of the semiconductor structure, or by interconnects such as solder or gold stud bumps. An underfill material which supports the semiconductor structure is introduced in any spaces between the interconnects. The underfill material may be a liquid that is cured to form a rigid structure. The growth substrate may then be removed without causing damage to the semiconductor structure.

Abstract: One or more LEDs are mounted within an LCD without the use of any printed circuit board (PCB), thus reducing the thickness of the LCD by about the thickness of the conventional PCB. In one embodiment, the LED and submount are mounted so that the submount is opposing the liquid crystal layer side of the LCD, so that the liquid crystal layers provide the mechanical support for the submount and LED die. The LED die (mounted on the submount) may be inserted into a cavity formed in the “top” surface of the light guide, and the top surface of the light guide is abutted against the liquid crystal layers. In such a configuration, the LED light source, including all supporting components, adds no thickness to the LCD. In another embodiment, on the “bottom” surface of the LCD opposing the LED die is an electrically switchable mirror that is either reflective or transparent. In its transparent state, the LED in the LCD may be used as a flash in a cell phone camera, while the LCD may be viewed to take the picture.

Abstract: Low profile, side-emitting LEDs are described. The LEDs are used in very thin backlights for backlighting an LCD. In one embodiment, the backlight comprises a solid transparent waveguide with at least one opening in the waveguide containing an LED proximate to one edge. To smooth out a clover-shaped or batwing brightness profile inherently generated by a rectangular side-emitting LED within a smooth-sided rectangular opening in the waveguide, depending on the orientation of the LED, the sidewalls of the opening are made to have varying angles along the length of each sidewall to vary the refraction angle of light along the sidewall. Additionally, if a plurality of LEDs are used in the backlight, the orientations of the openings alternate to create a more uniform brightness profile in the waveguide.

Abstract: One or more LEDs are mounted within an LCD without the use of any printed circuit board (PCB), thus reducing the thickness of the LCD by about the thickness of the conventional PCB. In one embodiment, the LED and submount are mounted so that the submount is opposing the liquid crystal layer side of the LCD, so that the liquid crystal layers provide the mechanical support for the submount and LED die. The LED die (mounted on the submount) may be inserted into a cavity formed in the “top” surface of the light guide, and the top surface of the light guide is abutted against the liquid crystal layers. In such a configuration, the LED light source, including all supporting components, adds no thickness to the LCD. In another embodiment, on the “bottom” surface of the LCD opposing the LED die is an electrically switchable mirror that is either reflective or transparent. In its transparent state, the LED in the LCD may be used as a flash in a cell phone camera, while the LCD may be viewed to take the picture.

Abstract: Solid-state optoelectronic and electronic devices that use semiconductor quantum dots for manipulation of photonic or electronic properties include a semiconductor active region forming a quantum dot heterostructure having a plurality of quantum dot layers each having discrete quantum hole states and a p-type impurity layer formed proximate to at least one of the quantum dot layers to provide excess equilibrium hole charge to occupy at least some of the discrete quantum hole states to improve To and other performance characteristics of quantum dot devices.

Abstract: Solid-state optoelectronic and electronic devices that use semiconductor quantum dots for manipulation of photonic or electronic properties include a semiconductor active region forming a quantum dot heterostructure having a plurality of quantum dot layers each having discrete quantum hole states and a p-type impurity layer formed proximate to at least one of the quantum dot layers to provide excess equilibrium hole charge to occupy at least some of the discrete quantum hole states to improve To and other performance characteristics of quantum dot devices.