Abstract: A radio frequency integrated circuit connectible to an array of antenna elements has an RF input/output port and antenna ports that are each connected to respective antenna elements of the array. A transmit-receive amplifier circuit with an amplifier input and an amplifier output is activated during both a transmit mode and a receive mode. An RF switch selectively connects the amplifier input to the RF input/output port and the amplifier output to one of the antenna ports in a transmit mode, and the amplifier input to the one of the antenna ports and the amplifier output to the RF input/output port in a receive mode.

Abstract: An antenna array module includes two or more antenna elements arranged in an array, each of the two or more antenna elements formed as a respective integrated passive device (IPD), and a multi-layer printed circuit board (PCB) including one or more metal layers forming one or more feed lines of the antenna elements. The antenna array module may include a radio frequency (RF) front end integrated circuit disposed on an opposite side of the multi-layer PCB from the two or more antenna elements. One or more signal output pins of the RF front end integrated circuit may be connected to the one or more feed lines. The antenna array module may include conductive contacts external to the multi-layer PCB for routing input signals through the multi-layer PCB to one or more signal input pins of the RF front end integrated circuit.

Abstract: A radio frequency front end circuit for a multimode transceiver has a first operating mode transmit input port, a second operating mode transmit input/receive output port, and a hybrid first and second operating mode receive output port. A first switch network has one or more switch elements together selectively connecting the first operating mode transmit input port, the second operating mode transmit input/receive output port, and the hybrid first and second operating mode receive output port to a coexistence filter first port. A second switch network has one or more switch elements that together selectively connect a coexistence filter second port to an antenna port.

Abstract: A metal oxide semiconductor field effect transistor preferably fabricated with a silicon-on-insulator process has a first semiconductor region and a second semiconductor region in a spaced relationship thereto A body structure is defined by a channel segment between the first semiconductor region and the second semiconductor region, and a first extension segment structurally contiguous with the channel segment. A shallow trench isolation structure surrounds the first semiconductor region, the second semiconductor region, and the body structure, with a first extension interface being defined between the shallow trench isolation structure and the first extension segment of the body structure to reduce leakage current flowing from the second semiconductor region to the first semiconductor region through a parasitic path of the body structure.

Abstract: A metal oxide semiconductor field effect transistor preferably fabricated with a silicon-on-insulator process has a first semiconductor region and a second semiconductor region in a spaced relationship thereto A body structure is defined by a channel segment between the first semiconductor region and the second semiconductor region, and a first extension segment structurally contiguous with the channel segment. A shallow trench isolation structure surrounds the first semiconductor region, the second semiconductor region, and the body structure, with a first extension interface being defined between the shallow trench isolation structure and the first extension segment of the body structure to reduce leakage current flowing from the second semiconductor region to the first semiconductor region through a parasitic path of the body structure.

Abstract: A zero insertion loss directional coupler includes an input port, an antenna port, an isolation port, and a detect port. The coupler has a first signal trace, a second signal trace, and an inductive winding. The first signal trace is on one of two layers and is connected to the input port and the antenna port, while the inductive winding is on another one of the two layers. A first terminal of the inductive winding is connected to the isolation port. A first terminal of the second signal trace is connected to the detect port and a second terminal of the second signal trace is connected to a second terminal of the inductive winding.

Abstract: An RF power limiter and ESD protection circuit has a set of two CMOS FETs each configured to perform a diode function with a defined forward voltage and arranged in an anti-parallel configuration and coupled between the input terminal and the ground terminal. When an RF signal is applied symmetrically to the input terminal and ground terminal it becomes symmetrically attenuated when the signal level exceeds the defined forward voltage of the diode configured CMOS FETs. In the ESD protection mode one of the CMOS FETs acts as a grounded gate NMOS transistor with SCR action to provide for mitigation of voltage and current over-stress of transistors utilized in RF transceiver circuits. Generally, the circuit architectures allow input power levels to be limited to an extent that reliable operation can be maintained.

Abstract: An RF receiver circuit configuration and design limited by conditions and frequencies to simultaneously provide steady state low-noise signal amplification, frequency down-conversion and image signal rejection. The invention provides combined circuits of an RF transceiver architecture that measure antenna reflected power relative to forward power using the error amplifier signal to adjust the gain of the variable gain amplifier in order to compensate for the mismatch between forward reflected power and forward power at the antenna in order to achieve constant radiated power. The RF receiver circuit may be implemented as one of a CMOS single chip device or as part of an integrated system of CMOS components.

Abstract: A radio frequency (RF) power amplifier circuit with a diode linearizer circuit. The power amplifier circuit has an input and an output, as well as a power amplifier transistor with a first terminal connected to the input, a second terminal connected to the output, and a third terminal. The linearizer circuit is connected to the third terminal and to ground, and has a non-linear current-voltage curve as well as a non-linear capacitance. The linearizer circuit reduces inter-modulation products in a current through the power amplifier transistor from the second terminal to the third terminal that corresponds to an input signal applied to the input.

Abstract: An RF receiver circuit configuration and design limited by conditions and frequencies to simultaneously provide steady state low-noise signal amplification, frequency down-conversion and image signal rejection. The invention provides combined circuits of an RF transceiver architecture that measure antenna reflected power relative to forward power using the error amplifier signal to adjust the gain of the variable gain amplifier in order to compensate for the mismatch between forward reflected power and forward power at the antenna in order to achieve constant radiated power. The RF receiver circuit may be implemented as one of a CMOS single chip device or as part of an integrated system of CMOS components.

Abstract: An RF receiver circuit configuration and design is limited by conditions and frequencies to simultaneously provide steady state low-noise signal amplification, frequency down-conversion, and image signal rejection. The RF receiver circuit may be implemented as one of a CMOS single chip device or as part of an integrated system of CMOS components.

Abstract: An RF power limiter and ESD protection circuit has a set of two CMOS FETs each configured to perform a diode function with a defined forward voltage and arranged in an anti-parallel configuration and coupled between the input terminal and the ground terminal. When an RF signal is applied symmetrically to the input terminal and ground terminal it becomes symmetrically attenuated when the signal level exceeds the defined forward voltage of the diode configured CMOS FETs. In the ESD protection mode one of the CMOS FETs acts as a grounded gate NMOS transistor with SCR action to provide for mitigation of voltage and current over-stress of transistors utilized in RF transceiver circuits. Generally, the circuit architectures allow input power levels to be limited to an extent that reliable operation can be maintained.

Abstract: A radio frequency (RF) power amplifier (PA) for amplifying an RF signal between a source node and an output node, the RF PA including a silicon substrate with a complementary metal oxide semiconductor (CMOS) N-type transistor with a source region and a drain region fabricated therein. The source region includes the source node of the RF PA and the drain region includes the output node of the RF PA. The RF PA includes a planar resistor fabricated on the surface of the silicon substrate proximal to the drain region of the N-type transistor, wherein the resistor provides a thermal source for heating the RF PA; and a control circuit providing thermal heating to the RF PA by providing power to the planar resistor during RF signal bursts wherein the added thermal heating compensates transient heating within the transistor and results in a linear power amplification operation.

Abstract: A radio frequency (RF) transmit-receive switch has an antenna port, first and second transmit differential ports and first and second receive differential ports. Transmit transistor switches are connected to the transmit differential ports. Primary and secondary windings of a transmit coupled inductor transformer are connected to the transmit transistor switches. Receive transistor switches are connected to the receive differential ports. Primary and secondary windings of a receive coupled inductor transformer are connected to the receive transistor switches. A first balun inductive winding is connected to the antenna port, and a second balun inductive winding is connected to the transistor switches.

Abstract: A radio frequency low noise amplifier circuit with a receive signal input, a receive signal output, and a voltage source include a low noise amplifier and a coupled inductor circuit with a primary inductive chain connected to the output of the low noise amplifier and to the voltage source. The coupled inductor circuit further includes a secondary inductive chain with a first inductor electromagnetically coupled to the primary inductive chain, and a second inductor in series with the first inductor and magnetically coupled to the primary inductive chain. The second inductor is connected to a feedback node of the low noise amplifier. There is an output matching network connected to the first inductor of the secondary inductive chain and to the receive signal output.

Abstract: An integrated circuit architecture and circuitry is defined by a die structure with a plurality of exposed conductive pads arranged in a grid of rows and columns. The die structure has a first operating frequency region with a first transmit and receive chain, and a second operating frequency region with a second transmit chain and a second receive chain. There is a shared region of the die structure defined by an overlapping segment of the first operating frequency region and the second operating frequency region with a shared power supply input conductive pad connected to the first transmit chain, the second transmit chain, the first receive chain, and the second receive chain, and a shared power detection output conductive pad connected to the first transmit chain and the second transmit chain.

Abstract: A directional coupler has a first port, a second port, a third port, and a fourth port. A first inductor has a first connection to the first port and a second connection to the second port. A second inductor has a first connection to the third port and a second connection to the fourth port. A first compensation capacitor is connected to the first port and the third port. A second compensation capacitor is connected to the first port and the fourth port. The first inductor is inductively coupled to the second inductor by a predefined coupling factor, the third port is isolated from the first port by a predefined first isolation factor, and the fourth port is isolated from the first port by a predefined second isolation factor. An inductance of the second inductor is substantially greater than an inductance of the first inductor.

Abstract: A radio frequency (RF) filter circuit for rejecting one or more spurious components of an input signal has a first resonator circuit including a first capacitor and a first coupled inductor pair of a first inductor and a second inductor, and a second resonator circuit with a second capacitor and a second coupled inductor pair of a third inductor and a fourth inductor. First and second resonator coupling capacitors are connected to the first resonator circuit and the second resonator circuit. A first port and a second port are connected to the first resonator circuit and the second resonator, with the filtered signal of the input signal passed through both the first resonator circuit and the second resonator circuit being output.

Abstract: A radio frequency (RF) power amplifier circuit with a diode linearizer circuit. The power amplifier circuit has an input and an output, as well as a power amplifier transistor with a first terminal connected to the input, a second terminal connected to the output, and a third terminal. The linearizer circuit is connected to the third terminal and to ground, and has a non-linear current-voltage curve as well as a non-linear capacitance. The linearizer circuit reduces inter-modulation products in a current through the power amplifier transistor from the second terminal to the third terminal that corresponds to an input signal applied to the input.

Abstract: A quasi-differential amplifier with an input port and an output port. The amplifier has a phase shifter network with a first port connected to the input port, a second port, and a third port. A first amplifier has an input connected to the second port of the phase shifter network, and an output, and a second amplifier has an input connected to the third port of the phase shifter network, and an output. A balun circuit includes a first differential port connected to an output of the first amplifier, a second differential port connected to an output of the second amplifier, and a single-ended port. An output matching network is connected to the single-ended port of the balun circuit and to the output port.