Abstract: A method of producing a semiconductor device includes providing a semiconductor body having a first surface and a dielectric layer arranged on the first surface and forming at least one first trench in the dielectric layer. The at least one first trench extends to the semiconductor body and defines a dielectric mesa region in the dielectric layer. The method further includes forming a second trench in the dielectric mesa region distant to the at least one first trench, forming a semiconductor layer on uncovered regions of the semiconductor body in the at least one first trench and forming a field electrode in the second trench.

Abstract: In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.

Abstract: A semiconductor component is disclosed. One embodiment includes a semiconductor body including a first semiconductor layer having at least one active component zone, a cell array with a plurality of trenches, and at least one cell array edge zone. The cell array edge zone is only arranged in an edge region of the cell array, adjoining at least one trench of the cell array, and being at least partially arranged below the at least one trench in the cell array.

Abstract: A semiconductor and method for manufacturing a semiconductor device. In one embodiment the method includes providing a semiconductor substrate with a first substrate surface and at least one trench having at least one trench surface. The trench extends from the first substrate surface into the semiconductor substrate. The trench has a first trench section and a second trench section. The trench surface is exposed in an upper portion of the first and second trench sections and covered with a first insulating layer in a lower portion. A second insulating layer is formed at least on the exposed trench surface in the upper portion. A conductive layer is formed on the second insulating layer at least in the upper portion, wherein the second insulating layer electrically insulates the conductive layer from the semiconductor substrate. The conductive layer is removed in the first trench section without removing the conductive layer in the second trench section.

Abstract: An integrated circuit device with a semiconductor body and a method for the production of a semiconductor device a provided. The semiconductor body comprises a cell field with a drift zone of a first conduction type. In addition, the semiconductor device comprises an edge region surrounding the cell field. Field plates with a trench gate structure are arranged in the cell field, and an edge trench surrounding the cell field is provided in the edge region. The front side of the semiconductor body is in the edge region provided with an edge zone of a conduction type complementing the first conduction type with doping materials of body zones of the cell field. The edge zone of the complementary conduction type extends both within and outside the edge trench.

Abstract: A semiconductor device includes a semiconductor body including a trench with first and second opposing sidewalls. A first electrode is arranged in a lower portion of the trench and a second electrode in an upper portion of the trench. A dielectric structure is arranged in the trench, including a first portion between the electrodes. The first portion includes, in sequence along a lateral direction from the first sidewall to the second sidewall, a first part including a first dielectric material, a second part including a second dielectric material selectively etchable to the first dielectric material, a third part including the first dielectric material, the first dielectric material of the third part being continuously arranged along a vertical direction from a top side of the first electrode to a bottom side of the second electrode, a fourth part including the second dielectric material and a fifth part including the first dielectric material.

Abstract: In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.

Abstract: A method for producing an electrode in a semiconductor layer includes providing a substrate with a first surface and a second surface, forming a first trench having sidewalls and extending into the substrate from the first surface and forming a plug in the first trench. The method further includes reducing a thickness of the semiconductor substrate by removing semiconductor material beginning at the first surface so as to at least partially uncover sidewalls of the plug and forming a semiconductor layer on the semiconductor substrate, the semiconductor layer at least partially covering the uncovered sidewalls of the plug, and having an upper surface.

Abstract: In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.

Abstract: A semiconductor and method for manufacturing a semiconductor device. In one embodiment the method includes providing a semiconductor substrate with a first substrate surface and at least one trench having at least one trench surface. The trench extends from the first substrate surface into the semiconductor substrate. The trench has a first trench section and a second trench section. The trench surface is exposed in an upper portion of the first and second trench sections and covered with a first insulating layer in a lower portion. A second insulating layer is formed at least on the exposed trench surface in the upper portion. A conductive layer is formed on the second insulating layer at least in the upper portion, wherein the second insulating layer electrically insulates the conductive layer from the semiconductor substrate. The conductive layer is removed in the first trench section without removing the conductive layer in the second trench section.

Abstract: An integrated circuit device with a semiconductor body and a method for the production of a semiconductor device a provided. The semiconductor body comprises a cell field with a drift zone of a first conduction type. In addition, the semiconductor device comprises an edge region surrounding the cell field. Field plates with a trench gate structure are arranged in the cell field, and an edge trench surrounding the cell field is provided in the edge region. The front side of the semiconductor body is in the edge region provided with an edge zone of a conduction type complementing the first conduction type with doping materials of body zones of the cell field. The edge zone of the complementary conduction type extends both within and outside the edge trench.

Abstract: A semiconductor and method for manufacturing a semiconductor device. In one embodiment the method includes providing a semiconductor substrate with a first substrate surface and at least one trench having at least one trench surface. The trench extends from the first substrate surface into the semiconductor substrate. The trench has a first trench section and a second trench section. The trench surface is exposed in an upper portion of the first and second trench sections and covered with a first insulating layer in a lower portion. A second insulating layer is formed at least on the exposed trench surface in the upper portion. A conductive layer is formed on the second insulating layer at least in the upper portion, wherein the second insulating layer electrically insulates the conductive layer from the semiconductor substrate. The conductive layer is removed in the first trench section without removing the conductive layer in the second trench section.

Abstract: An integrated circuit device with a semiconductor body and a method for the production of a semiconductor device a provided. The semiconductor body comprises a cell field with a drift zone of a first conduction type. In addition, the semiconductor device comprises an edge region surrounding the cell field. Field plates with a trench gate structure are arranged in the cell field, and an edge trench surrounding the cell field is provided in the edge region. The front side of the semiconductor body is in the edge region provided with an edge zone of a conduction type complementing the first conduction type with doping materials of body zones of the cell field. The edge zone of the complementary conduction type extends both within and outside the edge trench.

Abstract: A semiconductor device and method. One embodiments provides a semiconductor substrate having a trench with a sidewall isolation comprising a first isolating material, a field electrode formed in lower portion of the trench, a cover comprising a second material above the field electrode, the second material being selectively etchable to the first isolating material, a gate dielectric on the sidewall in an upper portion of the trench and a gate electrode in the upper portion of the trench.

Abstract: A semiconductor and method for manufacturing a semiconductor device. In one embodiment the method includes providing a semiconductor substrate with a first substrate surface and at least one trench having at least one trench surface. The trench extends from the first substrate surface into the semiconductor substrate. The trench has a first trench section and a second trench section. The trench surface is exposed in an upper portion of the first and second trench sections and covered with a first insulating layer in a lower portion. A second insulating layer is formed at least on the exposed trench surface in the upper portion. A conductive layer is formed on the second insulating layer at least in the upper portion, wherein the second insulating layer electrically insulates the conductive layer from the semiconductor substrate. The conductive layer is removed in the first trench section without removing the conductive layer in the second trench section.

Abstract: In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.

Abstract: A semiconductor device includes a semiconductor substrate, a trench, a buried insulated source electrode arranged in a bottom portion of the trench, a first gate electrode and a second gate electrode arranged in an upper portion of the trench and spaced apart from one another. A surface gate contact extends into the upper portion of the trench and is in physical and electrical contact with the first gate electrode and second gate electrode.

Abstract: A method for producing a transistor component having a field plate. One embodiment includes providing a semiconductor body having a first side, and including a first trench extending into the semiconductor body. A field plate dielectric layer is produced on the first side and at uncovered areas of the first trench such that a residual trench remains. A field plate layer is produced in the residual trench. The first side of the semiconductor body is uncovered using a polishing method. The field plate dielectric layer is partially removed from the at least one first trench proceeding from the first side.

Abstract: A semiconductor device and method. One embodiments provides a semiconductor substrate having a trench with a sidewall isolation comprising a first isolating material, a field electrode formed in lower portion of the trench, a cover comprising a second material above the field electrode, the second material being selectively etchable to the first isolating material, a gate dielectric on the sidewall in an upper portion of the trench and a gate electrode in the upper portion of the trench.

Abstract: An integrated circuit device with a semiconductor body and a method for the production of a semiconductor device a provided. The semiconductor body comprises a cell field with a drift zone of a first conduction type. In addition, the semiconductor device comprises an edge region surrounding the cell field. Field plates with a trench gate structure are arranged in the cell field, and an edge trench surrounding the cell field is provided in the edge region. The front side of the semiconductor body is in the edge region provided with an edge zone of a conduction type complementing the first conduction type with doping materials of body zones of the cell field. The edge zone of the complementary conduction type extends both within and outside the edge trench.