Abstract: A system and method for a packaged device with harmonic control are presented. In one embodiment, a device includes a substrate and a transistor die coupled to the substrate. The transistor die includes a plurality of transistor cells. Each transistor cell in the plurality of transistor cells includes a control (e.g., gate) terminal. The device includes a second die coupled to the substrate. The second die includes a plurality of individual shunt capacitors coupled between the control terminals of the plurality of transistor cells and a ground reference node. The capacitance values of at least two of the shunt capacitors are significantly different.

Abstract: A packaged RF amplifier device includes a transistor and an output circuit. The transistor includes a control terminal and first and second current carrying terminals. The output circuit is coupled between the first current carrying terminal and an output lead. The output circuit includes first and second inductive elements coupled in series. The first inductive element, which may be a first bondwire array or an integrated inductance, is coupled between the first current carrying terminal and a node. The second inductive element, which includes a second bondwire array, is coupled between the node and the output lead. The device also includes a shunt circuit with a shunt capacitor and a third bondwire array coupled between the first current carrying terminal and the shunt capacitor. The first and second inductive elements and the third bondwire array are configured to have a desired mutual inductance.

Abstract: In a system comprising a plurality of gain elements configured in parallel to one another, a harmonically tuned filter provides an isolation circuit to prevent odd-mode differential oscillations. A harmonically tuned filter comprises resistors, inductors, and capacitors (RLC) to selectively allow one or more specific harmonics to pass through the isolation circuit to suppress the odd-mode oscillation. Direct current (DC) and other non-harmonically-related frequencies do not pass through the isolation circuit. Since the resistor is used to dissipate specifically the energy of the harmonic frequencies causing the odd-mode oscillation, the current density through the resistor is much lower than the current density of a typical odd-mode resistor without a harmonically tuned filter.

Abstract: An electrostatic discharge (ESD) protection circuit (40) is coupled across input-output (I/O) pads (21) and common terminals (24) of a circuit core (22) to protect it from ESD events. The circuit (40) comprises, a unidirectional ESD clamp (23) and two or more floating diodes (42, 44) arranged in parallel opposed configuration in series with the ESD clamp (23), the combination coupled between the I/O pads (21) and the reference terminals (24). In a preferred arrangement, the two strings of opposed parallel coupled diodes (42, 44) are used with different numbers of diodes in each string. These diodes (42, 44) operate in forward conduction (43, 45), so the energy dissipated therein during an ESD event is much reduced compared to a reverse biased diode and they can have smaller area. Signal clipping at the I/O pad (21) is reduced, less power is dissipated and less chip area is utilized.

Abstract: An electrostatic discharge (ESD) protection circuit (40) is coupled across input-output (I/O) pads (21) and common terminals (24) of a circuit core (22) to protect it from ESD events. The circuit (40) comprises, a unidirectional ESD clamp (23) and two or more floating diodes (42, 44) arranged in parallel opposed configuration in series with the ESD clamp (23), the combination coupled between the I/O pads (21) and the reference terminals (24). In a preferred arrangement, the two strings of opposed parallel coupled diodes (42, 44) are used with different numbers of diodes in each string. These diodes (42, 44) operate in forward conduction (43, 45), so the energy dissipated therein during an ESD event is much reduced compared to a reverse biased diode and they can have smaller area. Signal clipping at the I/O pad (21) is reduced, less power is dissipated and less chip area is utilized.

Abstract: An electrostatic discharge (ESD) protection circuit (40) is coupled across input-output (I/O) pads (21) and common terminals (24) of a core circuit (22) to protect it from ESD events. The circuit (40) comprises, a unidirectional ESD clamp (23) and two or more floating diodes (42, 44) arranged in parallel opposed configuration in series with the ESD clamp (23), the combination coupled between the I/O pads (21) and the reference terminals (24). In a preferred arrangement, the two strings of opposed parallel coupled diodes (42, 44) are used with different numbers of diodes in each string. These diodes (42, 44) operate in forward conduction (43, 45), so the energy dissipated therein during an ESD event is much reduced compared to a reverse biased diode and they can have smaller area. Signal clipping at the I/O pad (21) is reduced, less power is dissipated and less chip area is utilized.

Abstract: A protection circuit apparatus comprises an electrostatic discharge circuit coupled to an isolation filter. The isolation filter comprises an inductor coupled to a ground-coupled capacitor, the inductor and the capacitor being coupled to the electrostatic discharge circuit. The inductor is also coupled to an electrostatic discharge sensitive device to be protected from an electrostatic discharge event.

Abstract: A protection circuit apparatus comprises an electrostatic discharge circuit coupled to an isolation filter. The isolation filter comprises an inductor coupled to a ground-coupled capacitor, the inductor and the capacitor being coupled to the electrostatic discharge circuit. The inductor is also coupled to an electrostatic discharge sensitive device to be protected from an electrostatic discharge event.

Abstract: An electrostatic discharge (ESD) protection circuit (40) is coupled across input-output (I/O) pads (21) and common terminals (24) of a core circuit (22) to protect it from ESD events. The circuit (40) comprises, a unidirectional ESD clamp (23) and two or more floating diodes (42, 44) arranged in parallel opposed configuration in series with the ESD clamp (23), the combination coupled between the I/O pads (21) and the reference terminals (24). In a preferred arrangement, the two strings of opposed parallel coupled diodes (42, 44) are used with different numbers of diodes in each string. These diodes (42, 44) operate in forward conduction (43, 45), so the energy dissipated therein during an ESD event is much reduced compared to a reverse biased diode and they can have smaller area. Signal clipping at the I/O pad (21) is reduced, less power is dissipated and less chip area is utilized.