Patents by Inventor Olivier Luere
Olivier Luere has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240030002Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.Type: ApplicationFiled: October 2, 2023Publication date: January 25, 2024Inventors: Leonid DORF, Rajinder DHINDSA, James ROGERS, Daniel Sang BYUN, Evgeny KAMENETSKIY, Yue GUO, Kartik RAMASWAMY, Valentin N. TODOROW, Olivier LUERE, Linying CUI
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Patent number: 11848176Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.Type: GrantFiled: May 7, 2021Date of Patent: December 19, 2023Assignee: Applied Materials, Inc.Inventors: Leonid Dorf, Rajinder Dhindsa, James Rogers, Daniel Sang Byun, Evgeny Kamenetskiy, Yue Guo, Kartik Ramaswamy, Valentin N. Todorow, Olivier Luere
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Publication number: 20230352264Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a negative jump voltage to an electrode of a process chamber to set a wafer voltage for a wafer, modulating an amplitude of the wafer voltage to produce a train of groups of pulse bursts with different amplitudes, and repeating the modulating of the amplitude of the wafer voltage to repeat the train of the groups of pulse bursts to create an ion energy distribution function having more than one energy peak. In some embodiments, the negative jump voltage can include a single-cycle voltage waveform with a voltage ramp during an ion-current phase, in which the voltage ramp can be positive or negative and a duration of the ion-current phase can comprise more or less than fifty percent of a period of the waveform.Type: ApplicationFiled: July 11, 2023Publication date: November 2, 2023Applicant: Applied Materials, Inc.Inventors: Leonid DORF, Travis KOH, Olivier LUERE, Olivier JOUBERT, Philip A. KRAUS, Rajinder DHINDSA, James ROGERS
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Publication number: 20230326717Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.Type: ApplicationFiled: May 24, 2023Publication date: October 12, 2023Applicant: Applied Materials, Inc.Inventors: Leonid DORF, Evgeny KAMENETSKIY, James ROGERS, Olivier LUERE, Rajinder DHINDSA, Viacheslav PLOTNIKOV
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Patent number: 11776789Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.Type: GrantFiled: October 3, 2022Date of Patent: October 3, 2023Assignee: Applied Materials, Inc.Inventors: Leonid Dorf, Rajinder Dhindsa, James Rogers, Daniel Sang Byun, Evgeny Kamenetskiy, Yue Guo, Kartik Ramaswamy, Valentin N. Todorow, Olivier Luere, Linying Cui
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Patent number: 11728124Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.Type: GrantFiled: July 16, 2021Date of Patent: August 15, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Leonid Dorf, Travis Koh, Olivier Luere, Olivier Joubert, Philip A. Kraus, Rajinder Dhindsa, James Rogers
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Publication number: 20230223268Abstract: Embodiments of the present disclosure generally relate to a method for etching a film stack with high selectivity and low etch recipe transition periods. In one embodiment, a method for etching a film stack having stacked pairs of oxide and nitride layers is described. The method includes transferring a substrate having a film stack formed thereon into a processing chamber, providing a first bias voltage to the substrate, etching an oxide layer of the film stack while providing the first bias voltage to the substrate, providing a second bias voltage to the substrate, the second bias voltage greater than the first bias voltage, and etching a nitride layer of the film stack while providing the second bias voltage to the substrate.Type: ApplicationFiled: January 10, 2022Publication date: July 13, 2023Inventors: Sean KANG, Olivier LUERE, Kenji TAKESHITA, Sanghyuk CHOI, Mengnan ZOU, Zihao DING
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Patent number: 11699572Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.Type: GrantFiled: January 22, 2020Date of Patent: July 11, 2023Assignee: Applied Materials, Inc.Inventors: Leonid Dorf, Evgeny Kamenetskiy, James Rogers, Olivier Luere, Rajinder Dhindsa, Viacheslav Plotnikov
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Publication number: 20230030927Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.Type: ApplicationFiled: October 3, 2022Publication date: February 2, 2023Inventors: Leonid DORF, Rajinder DHINDSA, James ROGERS, Daniel Sang BYUN, Evgeny KAMENETSKIY, Yue GUO, Kartik RAMASWAMY, Valentin N. TODOROW, Olivier LUERE, Linying CUI
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Patent number: 11521849Abstract: Embodiments of the present disclosure provide methods and apparatus for forming a desired material layer on a substrate between, during, prior to or after a patterning process. In one embodiment, a method for forming a material layer on a substrate includes pulsing a first gas precursor onto a surface of a substrate, attaching a first element from the first gas precursor onto the surface of the substrate, maintaining a substrate temperature less than about 110 degrees Celsius, pulsing a second gas precursor onto the surface of the substrate, and attaching a second element from the second gas precursor to the first element on the surface of the substrate.Type: GrantFiled: April 22, 2019Date of Patent: December 6, 2022Assignee: Applied Materials, Inc.Inventors: Sang Wook Park, Sunil Srinivasan, Rajinder Dhindsa, Jonathan Sungehul Kim, Lin Yu, Zhonghua Yao, Olivier Luere
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Patent number: 11508554Abstract: Embodiments described herein are applicable for use in all types of plasma assisted or plasma enhanced processing chambers and also for methods of plasma assisted or plasma enhanced processing of a substrate. More specifically, embodiments of this disclosure include a broadband filter assembly, also referred to herein as a filter assembly, that is configured to reduce and/or prevent RF leakage currents from being transferred from one or more RF driven components to a ground through other electrical components that are directly or indirectly electrically coupled to the RF driven components and ground with high input impedance (low current loss) making it compatible with shaped DC pulse bias applications.Type: GrantFiled: March 15, 2019Date of Patent: November 22, 2022Assignee: Applied Materials, Inc.Inventors: Anurag Kumar Mishra, James Rogers, Leonid Dorf, Rajinder Dhindsa, Olivier Luere
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Patent number: 11482402Abstract: Methods and apparatus for processing a substrate are provided herein. For example, an apparatus can be a controller for a high peak power radio frequency (RF) generator. The controller comprises a control logic circuit in operable communication with an RF generator operating in a burst mode, the control logic circuit configured to receive a power, P, request at a predetermined duty cycle, ?, from a plasma processing chamber, determine a peak maximum power, Ppeakmax, based on a maximum average power, Pavgmax, and a maximum absolute power, Pabsmax, of the RF generator and the predetermined duty cycle, and transmit a control signal to the RF generator to limit a peak power, Ppeak, to the plasma processing chamber based on the Ppeakmax.Type: GrantFiled: December 18, 2020Date of Patent: October 25, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Leonid Dorf, Rajinder Dhindsa, Olivier Luere, Evgeny Kamenetskiy
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Publication number: 20220319904Abstract: Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a process kit for processing a substrate is provided. The process kit has a support ring comprising an upper surface having an inner edge disposed at a first height and an outward edge disposed at a second height less than the first height, the inner edge having a greater thickness than the outward edge. An edge ring is disposed on the support ring, an inner surface of the edge ring interfaced with the inner edge of the support ring. A cover ring is disposed outward of the edge ring, the edge ring independently moveable relative to the support ring and the cover ring. Push pins are disposed inward of the cover ring, the push pins operable to elevate the edge ring while constraining radial movement of the support ring.Type: ApplicationFiled: June 17, 2022Publication date: October 6, 2022Inventors: Michael R. RICE, Yogananda SARODE VISHWANATH, Sunil SRINIVASAN, Rajinder DHINDSA, Steven E. BABAYAN, Olivier LUERE, Denis M. KOOSAU, Imad YOUSIF
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Patent number: 11462388Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.Type: GrantFiled: May 7, 2021Date of Patent: October 4, 2022Assignee: Applied Materials, Inc.Inventors: Leonid Dorf, Rajinder Dhindsa, James Rogers, Daniel Sang Byun, Evgeny Kamenetskiy, Yue Guo, Kartik Ramaswamy, Valentin N. Todorow, Olivier Luere, Linying Cui
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Patent number: 11462389Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.Type: GrantFiled: May 7, 2021Date of Patent: October 4, 2022Assignee: Applied Materials, Inc.Inventors: Leonid Dorf, Rajinder Dhindsa, James Rogers, Daniel Sang Byun, Evgeny Kamenetskiy, Yue Guo, Kartik Ramaswamy, Valentin N. Todorow, Olivier Luere, Jonathan Kolbeck, Linying Cui
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Patent number: 11393710Abstract: Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a substrate support assembly includes a height-adjustable edge ring, and the substrate support assembly is located within a process chamber. The substrate support assembly includes an electrostatic chuck, an edge ring positioned on a portion of the electrostatic chuck, and one or more actuators to adjust the height of the edge ring via one or more push pins. The height-adjustable edge ring can be used to compensate for erosion of the edge ring over time. In addition, the height-adjustable edge ring can be removed from the process chamber via a slit valve opening without venting and opening the process chamber. The height-adjustable edge ring can be tilted by the one or more actuators in order to improve azimuthal uniformity at the edge of the substrate.Type: GrantFiled: January 6, 2017Date of Patent: July 19, 2022Assignee: Applied Materials, Inc.Inventors: Michael R. Rice, Yogananda Sarode Vishwanath, Sunil Srinivasan, Rajinder Dhindsa, Steven E. Babayan, Olivier Luere, Denis M. Koosau, Imad Yousif
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Patent number: 11284500Abstract: Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.Type: GrantFiled: July 20, 2020Date of Patent: March 22, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Leonid Dorf, Olivier Luere, Rajinder Dhindsa, James Rogers, Sunil Srinivasan, Anurag Kumar Mishra
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Publication number: 20220037120Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.Type: ApplicationFiled: May 7, 2021Publication date: February 3, 2022Inventors: Leonid DORF, Rajinder DHINDSA, James ROGERS, Daniel Sang BYUN, Evgeny KAMENETSKIY, Yue GUO, Kartik RAMASWAMY, Valentin N. TODOROW, Olivier LUERE, Jonathan KOLBECK, Linying CUI
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Publication number: 20220037121Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.Type: ApplicationFiled: May 7, 2021Publication date: February 3, 2022Inventors: Leonid DORF, Rajinder DHINDSA, James ROGERS, Daniel Sang BYUN, Evgeny KAMENETSKIY, Yue GUO, Kartik RAMASWAMY, Valentin N. TODOROW, Olivier LUERE
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Publication number: 20220037119Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.Type: ApplicationFiled: May 7, 2021Publication date: February 3, 2022Inventors: Leonid DORF, Rajinder DHINDSA, James ROGERS, Daniel Sang BYUN, Evgeny KAMENETSKIY, Yue GUO, Kartik RAMASWAMY, Valentin N. TODOROW, Olivier LUERE, Linying Cui