Patents by Inventor Olivier Tesson

Olivier Tesson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9391214
    Abstract: A MOS varactor structure comprising a semiconductor body having a well region and a plurality of gate electrodes and a plurality of cathode electrodes arranged over the well region, wherein the gate electrodes comprise elongate pads, and the plurality of cathode contacts are connected by a cathode connection pattern, the cathode connection pattern comprising a plurality of arms, each of the plurality of arms arranged to extend over a part of a respective gate electrode pad.
    Type: Grant
    Filed: March 2, 2015
    Date of Patent: July 12, 2016
    Assignee: NXP B.V.
    Inventors: Olivier Tesson, Mathieu Perin, Laure Rolland du Roscoat
  • Patent number: 9305697
    Abstract: An integrated transformer comprising a primary coil and a secondary coil, the primary coil comprising a first subsection and a second subsection, the first subsection extending in a different plane to a plane in which the second subsection extends, the planes spaced from one another, the secondary coil comprising a first subsection and a second subsection, the first subsection extending in a different plane to a plane in which the second subsection extends, the planes spaced from one another, wherein the first subsection of the primary coil is stacked with the second subsection of the secondary coil and the second subsection of the primary coil is stacked with the first subsection of the secondary coil.
    Type: Grant
    Filed: December 17, 2014
    Date of Patent: April 5, 2016
    Assignee: NXP, B.V.
    Inventor: Olivier Tesson
  • Patent number: 9160052
    Abstract: A Lange coupler comprises an unbroken peripheral ground conductor surrounding input, through, coupled and isolated conductor strips coupled to input, through, coupled and isolated ports of the Lange coupler respectively, wherein the peripheral ground conductor and input and through conductor strips are arranged on a first metal layer.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: October 13, 2015
    Assignee: NXP, B.V.
    Inventors: Olivier Tesson, Patrice Gamand, Sidina Wane
  • Publication number: 20150270061
    Abstract: A transformer comprising primary and secondary windings is disclosed. Each winding has first and second metal capping layers coupled together electrically in parallel by a metal connector passing through a substrate lying between the first and second metal capping layers.
    Type: Application
    Filed: April 7, 2015
    Publication date: September 24, 2015
    Inventors: Magali Duplessis, Olivier Tesson
  • Patent number: 9136061
    Abstract: A varactor comprises a substrate having sets of gate units each having parallel gate strips. The gate units are located such that the gate strips of neighboring gate units are oriented transverse to each other. An electrically conducting gate connection layer comprises gate connection units comprising parallel gate connection strips located over the gate strips, and a cathode connection frame around each of the gate connection units. A first electrically conductive anode layer comprises first layer anode strips located parallel to the gate connection strips and connected to alternate gate connection strips, and a first anode connection frame connected to the anode strips. A second electrically conductive anode layer comprises anode strips located parallel to the gate connection strips and connected to opposite alternate gate connection strips, and a second anode connection frame connected to the second layer anode strips.
    Type: Grant
    Filed: July 29, 2013
    Date of Patent: September 15, 2015
    Assignee: NXP, B.V.
    Inventors: Olivier Tesson, Laure Rolland du Roscoat
  • Publication number: 20150255630
    Abstract: A MOS varactor structure comprising a semiconductor body having a well region and a plurality of gate electrodes and a plurality of cathode electrodes arranged over the well region, wherein the gate electrodes comprise elongate pads, and the plurality of cathode contacts are connected by a cathode connection pattern, the cathode connection pattern comprising a plurality of arms, each of the plurality of arms arranged to extend over a part of a respective gate electrode pad.
    Type: Application
    Filed: March 2, 2015
    Publication date: September 10, 2015
    Inventors: Olivier Tesson, Mathieu Perin, Laure Rolland du Roscoat
  • Patent number: 9082738
    Abstract: A semiconductor package, comprises an encapsulant which contains a semiconductor substrate, the package lower side being mountable on a surface. The semiconductor substrate backside is in close proximity of the semiconductor package lower side for improved thermal conductivity to the surface. The active side of the semiconductor substrate, facing the upper side of the semiconductor package, has a plurality of die contacts. A plurality of electrically conductive interconnects are connected to the die contacts and extend to the lower side of the semiconductor package for connecting the die contacts to the surface.
    Type: Grant
    Filed: December 18, 2012
    Date of Patent: July 14, 2015
    Assignee: NXP, B.V.
    Inventors: Pascal Talbot, Olivier Tesson
  • Patent number: 9064627
    Abstract: The invention proposes a radio frequency circuit which comprises a transformer with a first primary circuit, a second primary circuit, and a secondary circuit, the secondary circuit comprising an integrated first inductor, this first inductor being positioned, on an axis orthogonal to a surface of the circuit, between an integrated second and third inductor respectively comprised in the first primary circuit and second primary circuit.
    Type: Grant
    Filed: October 12, 2010
    Date of Patent: June 23, 2015
    Assignees: ST-ERICSSON SA, ST-ERICSSON (FRANCE) SAS
    Inventors: Christophe Cordier, Thomas Francois, Olivier Tesson
  • Publication number: 20150170824
    Abstract: An integrated transformer comprising a primary coil and a secondary coil, the primary coil comprising a first subsection and a second subsection, the first subsection extending in a different plane to a plane in which the second subsection extends, the planes spaced from one another, the secondary coil comprising a first subsection and a second subsection, the first subsection extending in a different plane to a plane in which the second subsection extends, the planes spaced from one another, wherein the first subsection of the primary coil is stacked with the second subsection of the secondary coil and the second subsection of the primary coil is stacked with the first subsection of the secondary coil.
    Type: Application
    Filed: December 17, 2014
    Publication date: June 18, 2015
    Inventor: Olivier Tesson
  • Patent number: 9048021
    Abstract: A transformer comprising primary and secondary windings is disclosed. Each winding has first and second metal capping layers coupled together electrically in parallel by a metal connector passing through a substrate lying between the first and second metal capping layers.
    Type: Grant
    Filed: May 4, 2011
    Date of Patent: June 2, 2015
    Assignee: NXP B.V.
    Inventors: Magali Duplessis, Olivier Tesson
  • Publication number: 20150070240
    Abstract: An integrated circuit for a packaged device is proposed. The circuit comprises: a circuit having first and second electromagnetic radiating elements fabricated on a die; a package substrate comprising an upper surface and a lower surface; and a grounding layer provided on the lower surface of the package substrate, the grounding layer being adapted to connect to a grounding plane of a printed circuit board. The die is mounted on the upper surface of the package substrate. The grounding layer comprises a void, at least a portion of the void being positioned so as to at least partially electromagnetically isolate the first electromagnetic radiating element from the second electromagnetic radiating element.
    Type: Application
    Filed: September 8, 2014
    Publication date: March 12, 2015
    Inventors: Patrice Gamand, Olivier Tesson
  • Publication number: 20140036406
    Abstract: A varactor comprises a substrate having sets of gate units each having parallel gate strips. The gate units are located such that the gate strips of neighbouring gate units are oriented transverse to each other. An electrically conducting gate connection layer comprises gate connection units comprising parallel gate connection strips located over the gate strips, and a cathode connection frame around each of the gate connection units. A first electrically conductive anode layer comprises first layer anode strips located parallel to the gate connection strips and connected to alternate gate connection strips, and a first anode connection frame connected to the anode strips. A second electrically conductive anode layer comprises anode strips located parallel to the gate connection strips and connected to opposite alternate gate connection strips, and a second anode connection frame connected to the second layer anode strips.
    Type: Application
    Filed: July 29, 2013
    Publication date: February 6, 2014
    Applicant: NXP B.V.
    Inventors: Olivier Tesson, Laure Rolland du Roscoat
  • Publication number: 20130229239
    Abstract: A Lange coupler comprises an unbroken peripheral ground conductor surrounding input, through, coupled and isolated conductor strips coupled to input, through, coupled and isolated ports of the Lange coupler respectively, wherein the peripheral ground conductor and input and through conductor strips are arranged on a first metal layer.
    Type: Application
    Filed: February 28, 2013
    Publication date: September 5, 2013
    Applicant: NXP B.V.
    Inventors: Olivier Tesson, Patrice Gamand, Sidina Wane
  • Patent number: 8258916
    Abstract: The present invention relates in general to the field of integrated circuits, and more specifically to a meander resistor. Basically, a meander resistor can be considered as a bar resistor with the exception of the corner squares (right-angle bends). The Electrostatic Discharge (ESD) sensitivities of on-chip resistors can be a problem for both electronic manufactures and electronic component users. As others components, passive devices are known to be susceptible to ESD events. The context of this invention is to improve the reliability of the resistors during an ESD event. An ESD stress means that high current and high voltage levels are applied to the device. The device has to be able to dissipate this energy without failure.
    Type: Grant
    Filed: July 2, 2009
    Date of Patent: September 4, 2012
    Assignee: NXP B.V.
    Inventors: Olivier Tesson, Frédéric Francois Barbier
  • Publication number: 20120194403
    Abstract: The invention proposes a radio frequency circuit which comprises a transformer with a first primary circuit, a second primary circuit, and a secondary circuit, the secondary circuit comprising an integrated first inductor, this first inductor being positioned, on an axis orthogonal to a surface of the circuit, between an integrated second and third inductor respectively comprised in the first primary circuit and second primary circuit.
    Type: Application
    Filed: October 12, 2010
    Publication date: August 2, 2012
    Applicants: ST-ERICSSON SA, ST-ERICSSON (FRANCE) SAS
    Inventors: Christophe Cordier, Thomas Francois, Olivier Tesson
  • Publication number: 20110273258
    Abstract: A transformer comprising primary and secondary windings is disclosed. Each winding has first and second metal capping layers coupled together electrically in parallel by a metal connector passing through a substrate lying between the first and second metal capping layers.
    Type: Application
    Filed: May 4, 2011
    Publication date: November 10, 2011
    Applicant: NXP B.V.
    Inventors: Magali Duplessis, Olivier Tesson
  • Publication number: 20110241820
    Abstract: The present invention relates in general to the field of integrated circuits, and more specifically to a meander resistor. Basically, a meander resistor can be considered as a bar resistor with the exception of the corner squares (right-angle bends). The Electrostatic Discharge (ESD) sensitivities of on-chip resistors can be a problem for both electronic manufactures and electronic component users. As others components, passive devices are known to be susceptible to ESD events. The context of this invention is to improve the reliability of the resistors during an ESD event. An ESD stress means that high current and high voltage levels are applied to the device. The device has to be able to dissipate this energy without failure.
    Type: Application
    Filed: July 2, 2009
    Publication date: October 6, 2011
    Applicant: NXP B.V.
    Inventors: Olivier Tesson, Frédéric Francois Barbier
  • Publication number: 20100316911
    Abstract: A multilayer structure, in particular a trench capacitor, is provided comprising a patterned layer structure comprising trenches, and a first electrode, wherein the patterned layer structure comprises a FASS-curve structure, and wherein at least parts of the first electrode are formed on the FASS-curve structure.
    Type: Application
    Filed: October 20, 2008
    Publication date: December 16, 2010
    Applicant: IPDIA
    Inventors: Olivier Tesson, Francois LeCornec