Abstract: A MOS varactor structure comprising a semiconductor body having a well region and a plurality of gate electrodes and a plurality of cathode electrodes arranged over the well region, wherein the gate electrodes comprise elongate pads, and the plurality of cathode contacts are connected by a cathode connection pattern, the cathode connection pattern comprising a plurality of arms, each of the plurality of arms arranged to extend over a part of a respective gate electrode pad.

Abstract: An integrated transformer comprising a primary coil and a secondary coil, the primary coil comprising a first subsection and a second subsection, the first subsection extending in a different plane to a plane in which the second subsection extends, the planes spaced from one another, the secondary coil comprising a first subsection and a second subsection, the first subsection extending in a different plane to a plane in which the second subsection extends, the planes spaced from one another, wherein the first subsection of the primary coil is stacked with the second subsection of the secondary coil and the second subsection of the primary coil is stacked with the first subsection of the secondary coil.

Abstract: A Lange coupler comprises an unbroken peripheral ground conductor surrounding input, through, coupled and isolated conductor strips coupled to input, through, coupled and isolated ports of the Lange coupler respectively, wherein the peripheral ground conductor and input and through conductor strips are arranged on a first metal layer.

Abstract: A transformer comprising primary and secondary windings is disclosed. Each winding has first and second metal capping layers coupled together electrically in parallel by a metal connector passing through a substrate lying between the first and second metal capping layers.

Abstract: A varactor comprises a substrate having sets of gate units each having parallel gate strips. The gate units are located such that the gate strips of neighboring gate units are oriented transverse to each other. An electrically conducting gate connection layer comprises gate connection units comprising parallel gate connection strips located over the gate strips, and a cathode connection frame around each of the gate connection units. A first electrically conductive anode layer comprises first layer anode strips located parallel to the gate connection strips and connected to alternate gate connection strips, and a first anode connection frame connected to the anode strips. A second electrically conductive anode layer comprises anode strips located parallel to the gate connection strips and connected to opposite alternate gate connection strips, and a second anode connection frame connected to the second layer anode strips.

Abstract: A MOS varactor structure comprising a semiconductor body having a well region and a plurality of gate electrodes and a plurality of cathode electrodes arranged over the well region, wherein the gate electrodes comprise elongate pads, and the plurality of cathode contacts are connected by a cathode connection pattern, the cathode connection pattern comprising a plurality of arms, each of the plurality of arms arranged to extend over a part of a respective gate electrode pad.

Abstract: A semiconductor package, comprises an encapsulant which contains a semiconductor substrate, the package lower side being mountable on a surface. The semiconductor substrate backside is in close proximity of the semiconductor package lower side for improved thermal conductivity to the surface. The active side of the semiconductor substrate, facing the upper side of the semiconductor package, has a plurality of die contacts. A plurality of electrically conductive interconnects are connected to the die contacts and extend to the lower side of the semiconductor package for connecting the die contacts to the surface.

Abstract: The invention proposes a radio frequency circuit which comprises a transformer with a first primary circuit, a second primary circuit, and a secondary circuit, the secondary circuit comprising an integrated first inductor, this first inductor being positioned, on an axis orthogonal to a surface of the circuit, between an integrated second and third inductor respectively comprised in the first primary circuit and second primary circuit.

Abstract: An integrated transformer comprising a primary coil and a secondary coil, the primary coil comprising a first subsection and a second subsection, the first subsection extending in a different plane to a plane in which the second subsection extends, the planes spaced from one another, the secondary coil comprising a first subsection and a second subsection, the first subsection extending in a different plane to a plane in which the second subsection extends, the planes spaced from one another, wherein the first subsection of the primary coil is stacked with the second subsection of the secondary coil and the second subsection of the primary coil is stacked with the first subsection of the secondary coil.

Abstract: A transformer comprising primary and secondary windings is disclosed. Each winding has first and second metal capping layers coupled together electrically in parallel by a metal connector passing through a substrate lying between the first and second metal capping layers.

Abstract: An integrated circuit for a packaged device is proposed. The circuit comprises: a circuit having first and second electromagnetic radiating elements fabricated on a die; a package substrate comprising an upper surface and a lower surface; and a grounding layer provided on the lower surface of the package substrate, the grounding layer being adapted to connect to a grounding plane of a printed circuit board. The die is mounted on the upper surface of the package substrate. The grounding layer comprises a void, at least a portion of the void being positioned so as to at least partially electromagnetically isolate the first electromagnetic radiating element from the second electromagnetic radiating element.

Abstract: A varactor comprises a substrate having sets of gate units each having parallel gate strips. The gate units are located such that the gate strips of neighbouring gate units are oriented transverse to each other. An electrically conducting gate connection layer comprises gate connection units comprising parallel gate connection strips located over the gate strips, and a cathode connection frame around each of the gate connection units. A first electrically conductive anode layer comprises first layer anode strips located parallel to the gate connection strips and connected to alternate gate connection strips, and a first anode connection frame connected to the anode strips. A second electrically conductive anode layer comprises anode strips located parallel to the gate connection strips and connected to opposite alternate gate connection strips, and a second anode connection frame connected to the second layer anode strips.

Abstract: A Lange coupler comprises an unbroken peripheral ground conductor surrounding input, through, coupled and isolated conductor strips coupled to input, through, coupled and isolated ports of the Lange coupler respectively, wherein the peripheral ground conductor and input and through conductor strips are arranged on a first metal layer.

Abstract: The present invention relates in general to the field of integrated circuits, and more specifically to a meander resistor. Basically, a meander resistor can be considered as a bar resistor with the exception of the corner squares (right-angle bends). The Electrostatic Discharge (ESD) sensitivities of on-chip resistors can be a problem for both electronic manufactures and electronic component users. As others components, passive devices are known to be susceptible to ESD events. The context of this invention is to improve the reliability of the resistors during an ESD event. An ESD stress means that high current and high voltage levels are applied to the device. The device has to be able to dissipate this energy without failure.

Abstract: The invention proposes a radio frequency circuit which comprises a transformer with a first primary circuit, a second primary circuit, and a secondary circuit, the secondary circuit comprising an integrated first inductor, this first inductor being positioned, on an axis orthogonal to a surface of the circuit, between an integrated second and third inductor respectively comprised in the first primary circuit and second primary circuit.

Abstract: A transformer comprising primary and secondary windings is disclosed. Each winding has first and second metal capping layers coupled together electrically in parallel by a metal connector passing through a substrate lying between the first and second metal capping layers.

Abstract: The present invention relates in general to the field of integrated circuits, and more specifically to a meander resistor. Basically, a meander resistor can be considered as a bar resistor with the exception of the corner squares (right-angle bends). The Electrostatic Discharge (ESD) sensitivities of on-chip resistors can be a problem for both electronic manufactures and electronic component users. As others components, passive devices are known to be susceptible to ESD events. The context of this invention is to improve the reliability of the resistors during an ESD event. An ESD stress means that high current and high voltage levels are applied to the device. The device has to be able to dissipate this energy without failure.

Abstract: A multilayer structure, in particular a trench capacitor, is provided comprising a patterned layer structure comprising trenches, and a first electrode, wherein the patterned layer structure comprises a FASS-curve structure, and wherein at least parts of the first electrode are formed on the FASS-curve structure.