Abstract: Systems, apparatus, and articles of manufacture are disclosed to enable integrated circuit packages with double hybrid bonded dies and methods of manufacturing the same include an integrated circuit (IC) package including a first semiconductor die including first metal vias spaced apart along a first layer of a first dielectric material, the first metal vias connected to respective first metal pads of the first semiconductor die, a second semiconductor die including second metal pads of the second semiconductor die, and a hybrid bond layer including a third dielectric material and third metal vias spaced apart along the third dielectric material, a subset of the third metal vias electrically coupling ones of the first metal pads to respective ones of the second metal pads, a first one of the third metal vias positioned beyond a lateral side of the first semiconductor die.

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to disaggregating co-packaged SOC and photonic integrated circuits on an multichip package. The photonic integrated circuits may also be silicon photonics engines. In embodiments, multiple SOCs and photonic integrated circuits may be electrically coupled, respectively, into modules, with multiple modules then incorporated into an MCP using a stacked die structure. Other embodiments may be described and/or claimed.

Abstract: Embodiments disclosed herein include multi-die packages with open cavity bridges. In an example, an electronic apparatus includes a package substrate having alternating metallization layers and dielectric layers. The package substrate includes a first plurality of substrate pads and a second plurality of substrate pads. The package substrate also includes an open cavity between the first plurality of substrate pads and the second plurality of substrate pads, the open cavity having a bottom and sides. The electronic apparatus also includes a bridge die in the open cavity, the bridge die including a first plurality of bridge pads, a second plurality of bridge pads, and conductive traces. An adhesive layer couples the bridge die to the bottom of the open cavity. A gap is laterally between the bridge die and the sides of the open cavity, the gap surrounding the bridge die.

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to disaggregating co-packaged SOC and photonic integrated circuits on an multichip package. The photonic integrated circuits may also be silicon photonics engines. In embodiments, multiple SOCs and photonic integrated circuits may be electrically coupled, respectively, into modules, with multiple modules then incorporated into an MCP using a stacked die structure. Other embodiments may be described and/or claimed.

Abstract: Techniques and mechanisms for facilitating heat conductivity in a packaged device with a dummy die. In an embodiment, a packaged device comprises a substrate and one or more IC die coupled to a surface thereof. A dummy die, adjacent to an IC die and coupled to a region of the substrate, comprises a polymer resin and a filler. A package mold structure of the packaged device adjoins respective sides of the IC die and the dummy die, and adjoins the surface of the substrate. In another embodiment, a first CTE of the dummy die is less than a second CTE of the package mold structure, and a first thermal conductivity of the dummy die is greater than a second thermal conductivity of the package mold structure.

Abstract: A semiconductor package comprises an interposer and a photonics die. The photonics die has a front side with an on-chip fiber connector and solder bumps, the photonics die over the interposer with the on-chip fiber connector and the solder bumps facing away from the interposer. A patch substrate is mounted on the interposer adjacent to the photonics die. A logic die is mounted on the patch substrate with an overhang past an edge of the patch substrate and the overhang is attached to the solder bumps of the photonics die. An integrated heat spreader (IHS) is over the logic die such that the photonics die does not directly contact the IHS.

Abstract: A groove alignment structure comprises an etch stop material and a substrate over the etch stop material. A set of grooves is along a first direction in a top surface of the substrate, and adhesive material is in a bottom of the set of grooves. Optical fibers are in the set of grooves over the adhesive material and a portion of the optical fibers extends above the substrate. A set of polymer guides is along the first direction on the top surface of the substrate interleaved with the set of grooves.

Abstract: Embodiments disclosed herein include multi-die packages with open cavity bridges. In an example, an electronic apparatus includes a package substrate having alternating metallization layers and dielectric layers. The package substrate includes a first plurality of substrate pads and a second plurality of substrate pads, and an open cavity. A bridge die is in the open cavity, the bridge die including a first plurality of bridge pads, a second plurality of bridge pads, a power delivery bridge pad between the first plurality of bridge pads and the second plurality of bridge pads, and conductive traces. A first die is coupled to the first plurality of substrate pads and the first plurality of bridge pads. A second die is coupled to the second plurality of substrate pads and the second plurality of bridge pads. A power delivery conductive line is coupled to the power delivery bridge pad.

Abstract: An RF chip package comprises a housing and one or more conductive contacts designed to electrically connect the RF chip package to other conductive contacts. The housing includes a first substrate, a 3-D antenna on the first substrate, and a second substrate. The second substrate includes a plurality of semiconductor devices and is bonded to the first substrate. An interconnect structure allows for electrical connection between the first and second substrates. In some cases, the first substrate is flip-chip bonded to the second substrate or is otherwise connected to the second substrate by an array of solder balls. By integrating both the 3-D antenna and RF circuitry together in the same chip package, costs are minimized while bandwidth is greatly improved compared to a separately machined 3-D antenna.

Abstract: An electronic device includes first and second external conductive pads coupled to route a first signal and third and fourth external conductive pads. The third and the fourth external conductive pads are between the first and the second external conductive pads on a surface of the electronic device.

Abstract: Methods, apparatus, systems, and articles of manufacture are disclosed includes an integrated circuit (IC) package including a first die including a first surface and a second surface opposite the first surface, the first surface defined by a bulk semiconductor region of the first die, a second die including a third surface and a fourth surface opposite the third surface, the third surface defined by a bulk semiconductor region of the second die, the fourth surface facing towards the second surface, a first bonding layer between the second and fourth surfaces, the first bonding layer including first metal vias disposed therein, and a second bonding layer between the second and fourth surfaces, the second bonding layer including second metal vias disposed therein, the first bonding layer in direct contact with the second bonding layer, ones of the first metal vias in direct contact with ones of the second metal vias to electrically couple the first die to the second die.

Abstract: Microelectronic devices, assemblies, and systems include a multichip composite device having one or more integrated circuit dies bonded to a base die and an inorganic dielectric material adjacent the integrated circuit dies and over the base die. The multichip composite device includes a dummy die, dummy vias, or integrated fluidic cooling channels laterally adjacent the integrated circuit dies to conduct heat from the base die.

Abstract: Composite integrated circuit (IC) device processing, including selective removal of inorganic dielectric material. Inorganic dielectric material may be deposited, modified with laser exposure, and selectively removed. Laser exposure parameters may be adjusted using surface topography measurements. Inorganic dielectric material removal may reduce surface topography. Vias and trenches of varying size, shape, and depth may be concurrently formed without an etch-stop layer. A composite IC device may include an IC die, a conductive via, and a conductive line adjacent a compositionally homogenous inorganic dielectric material.

Abstract: Techniques and mechanisms to mitigate warping of a composite chiplet. In an embodiment, multiple via structures each extend through an insulator material in one of multiple levels of a composite chiplet. The insulator material extends around an integrated circuit (IC) component in the level. For a given one of the multiple via structures, a respective annular structure extends around the via structure to mitigate a compressive (or tensile) stress due to expansion (or contraction) of the via structure. In another embodiment, the composite chiplet additionally or alternatively comprises a structural support layer on the multiple levels, wherein the structural support layer has formed therein or thereon dummy via structures or a warpage compensation film.

Abstract: Quasi-monolithic multi-die composites including a primary fill structure within a space between adjacent IC dies. A fill material layer, which may have inorganic composition, may be bonded to a host substrate and patterned to form a primary fill structure that occupies a first portion of the host substrate. IC dies may be bonded to regions of the host substrate within openings where the primary fill structure is absent to have a spatial arrangement complementary to the primary fill structure. The primary fill structure may have a thickness substantially matching that of IC dies and/or be co-planar with a surface of one or more of the IC dies. A gap fill material may then be deposited within remnants of the openings to form a secondary fill structure that occupies space between the IC dies and the primary fill structure.

Abstract: An integrated circuit (IC) device comprises an array comprising rows and columns of conductive interconnect pads. At least one optical alignment fiducial region is distinct from the array and comprises a fiducial pattern, wherein the fiducial pattern comprises a first group of pads contiguous to a second group of pads, and wherein a width of a space between nearest pads of the first and second groups is wider than the spaces between pads within each group.

Abstract: Techniques and mechanisms to mitigate corrosion to via structures of a composite chiplet. In an embodiment, a composite chiplet comprises multiple integrated circuit (IC) components which are each in a different respective one of multiple levels. One or more conductive vias extend through an insulator layer in a first level of the multiple levels. An annular structure of the composite chiplet extends vertically through the insulator layer, and surrounds the one or more conductive vias in the insulator layer. The annular structure mitigates an exposure of the one or more conductive vias to moisture which is in a region of the insulator layer that is not surrounded by the annular structure. In another embodiment, the annular structure further surrounds an IC component which extends in the insulator layer.

Abstract: Multi-die packages including IC die crack mitigation features. Prior to the bonding of IC dies to a host substrate, the IC dies may be shaped, for example with a corner radius or chamfer. After bonding the shaped IC dies, a fill comprising at least one inorganic material may be deposited over the IC dies, for example to backfill a space between adjacent IC dies. With the benefit of a greater IC die sidewall slope and/or smoother surface topology associated with the shaping process, occurrences of stress cracking within the fill and concomitant damage to the IC dies may be reduced. Prior to depositing a fill, a barrier layer may be deposited over the IC die to prevent cracks that might form in the fill material from propagating into the IC die.

Abstract: Embodiments disclosed herein include electronic packages and methods of forming electronic packages. In an embodiment, the electronic package comprises a package substrate, a die coupled to the package substrate, a photonics integrated circuit (PIC) coupled to the die, and a fiber array unit (FAU) optically coupled to the PIC. In an embodiment, the FAU has a base with a first width and a protrusion with a second width that is smaller than the first width.

Abstract: A multichip composite device includes on- and off-die metallization layers, inorganic dielectric material, and stacked hybrid-bonded dies. On-die metallization layers may be thinner than off-die metallization layers. The multichip composite device may include a structural substrate. Off-die metallization layers may be above and below the stacked hybrid-bonded dies. A substrate may couple the multichip composite device to a power supply in a multichip system. Forming a multichip composite device includes hybrid bonding dies and forming inorganic dielectric material.