Abstract: Techniques and mechanisms to mitigate corrosion to via structures of a composite chiplet. In an embodiment, a composite chiplet comprises multiple integrated circuit (IC) components which are each in a different respective one of multiple levels. One or more conductive vias extend through an insulator layer in a first level of the multiple levels. An annular structure of the composite chiplet extends vertically through the insulator layer, and surrounds the one or more conductive vias in the insulator layer. The annular structure mitigates an exposure of the one or more conductive vias to moisture which is in a region of the insulator layer that is not surrounded by the annular structure. In another embodiment, the annular structure further surrounds an IC component which extends in the insulator layer.

Abstract: Bonding pedestals on substrates, and their manufacture, for direct bonding integrated circuit (IC) dies onto substrates. The electrical interconnections of one or more IC dies and a substrate are bonded together with the IC dies on and overhanging the pedestals. A bonding pedestal may be formed by etching down the substrate around the interconnections. A system may include one or more such pedestals above and adjacent a recessed surface on a substrate with IC dies overhanging the pedestals. Such a system may be coupled to a host component, such as a board, and a power supply via the host component.

Abstract: An integrated circuit (IC) device comprises a host component and an IC die directly bonded to the host component. The IC die comprises a substrate material layer and a die metallization level between the substrate material layer and host component. The IC die includes an upper die alignment fiducial between the die metallization level and host component. The upper die alignment fiducial at least partially overlaps one or more metallization features within the die metallization level. In embodiments, at least two orthogonal edges of the upper die alignment fiducial do not overlap any of the metallization features within the die metallization level. In embodiments, the IC die includes a lower die alignment fiducial between the substrate material layer and the die metallization level. The lower die alignment fiducial may at least partially overlap one or more second metallization features within a second die metallization level of the IC die.

Abstract: A microelectronics package, comprising a substrate comprising a first bondpad and a second bondpad over a dielectric. An inductor comprising at least one wire extends over the dielectric. The at least one wire has a first end coupled to the first bondpad and a second end coupled to the second bondpad, and an inductor core layer over the dielectric. The inductor core layer comprises a magnetic material. At least a portion of the inductor extends within the inductor core layer.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device includes one or more ribbon bond connections along with one or more wire bond connections. In one example, ribbon bond connections are shown, and are coupled to ground, and configured to provide a shielding effect to wire bond connections.

Abstract: Package assemblies with a molded substrate comprising fluid conduits. The fluid conduits may be operable for conveying a fluid (e.g., liquid and/or vapor) through some portion of the package substrate structure. Fluid conduits may be at least partially defined by an interconnect trace comprising a metal. The fluid conveyance may improve thermal management of the package assembly, for example removing heat dissipated by one or more integrated circuits (ICs) of the package assembly.

Abstract: A packaged device comprises first die stack and a third die. The first die stack includes a first die comprising first conductive contacts each at a first side of the first die, and a second die comprising second conductive contacts each at a second side of the second die. First solder bonds which each extend to a respective one of the first conductive contacts. The third die comprises third conductive contacts each at a third side of the third die. The third die is coupled to the first die stack via second solder bonds which each extend to a respective one of the second conductive contacts, and to a respective one of the third conductive contacts. Each die of the first die stack is coupled to each of a respective one or more other dies of the first die stack via respective hybrid bonds.

Abstract: Multi-die composite packages including directly bonded IC die and at least one electro-thermo-mechanical die (ETMD). An ETMD is distinguished from an active IC die as an ETMD is a passive die lacking any semiconductor devices, such as transistors. In exemplary embodiments, an ETMD includes a substrate, which may be a crystalline semiconductor material, for example, and one or more through substrate vias (TSVs) passing through a thickness of the substrate. The TSVs may enable a ETMD to electrically interconnect an (active) IC die of a composite package to another IC die of the package or to a package host.

Abstract: An integrated circuit (IC) package comprises a first IC die comprising a first hardware interface at a first side of the first die, and one or more first conductive contacts at the first side. A second IC die coupled to the first die comprises a second hardware interface at a second side of the second die. Second conductive contacts of the first hardware interface are each in direct contact with a respective one of third conductive contacts of the second hardware interface. A third hardware interface comprises: one or more interconnect structures, each coupled to a respective one of the one or more first conductive contacts and each comprising a fourth conductive contact, and fifth conductive contacts at a third side of the second die, wherein the one or more interconnect structures are each to electrically couple the third hardware interface to the first die.

Abstract: Integrated circuit assemblies can be fabricated on a wafer scale, wherein a base template, having a plurality of openings, may cover a base substrate, such as a die wafer, wherein the base substrate has a plurality of first integrated circuit devices formed therein and wherein at least one second integrated circuit device is electrically attached to a corresponding first integrated circuit device through a respective opening in the base template. Thus, when the base substrate and base template are singulated into individual integrated circuit assemblies, the individual integrated circuit assemblies will each have a first integrated circuit that is edge aligned to a singulated portion of the base template. The singulated portion of the base template can provide an improved thermal path, mechanical strength, and/or electrical paths for the individual integrated circuit assemblies.

Abstract: Techniques and mechanisms for a reconstituted circuit device to be formed using a flow of material, by capillary action, in a region between a first die and a second die. In an embodiment, a rigid mass extends around, and between, the first die and the second die. The rigid mass comprises a first body of a first material, and a second body of second material, wherein the bodies each extend across the region to respective sidewall structures of the first and second dies. In the region, a portion of the first body forms a surface structure which adjoins the second body. A concave or convex shape of the surface structure is an artefact of a meniscus formed by the first material during a liquid state thereof. In another embodiment, the reconstituted circuit device further comprises an interconnect which adjoins, and extends through, the rigid mass.

Abstract: Integrated circuit assemblies can be fabricated on a wafer scale, wherein a base template, having a plurality of openings, may cover a base substrate, such as a die wafer, wherein the base substrate has a plurality of first integrated circuit devices formed therein and wherein at least one second integrated circuit device is electrically attached to a corresponding first integrated circuit device through a respective opening in the base template. Thus, when the base substrate and base template are singulated into individual integrated circuit assemblies, the individual integrated circuit assemblies will each have a first integrated circuit that is edge aligned to a singulated portion of the base template. The singulated portion of the base template can provide an improved thermal path, mechanical strength, and/or electrical paths for the individual integrated circuit assemblies.

Abstract: Microelectronic stacked die package structures formed according to some embodiments may include a first die comprising a first conductive layer over a substrate layer. A second die may be on the first conductive layer. A third die is on the second die. An edge region of the stacked die package structure comprises a first portion over a second portion, the first portion comprising edges of the third die, the second die, and the first conductive layer, and the second portion comprising the substrate layer of the first die, wherein the first portion comprises a curved profile, and the second portion comprises a substantially vertical profile.

Abstract: An electronic device may include a photonic integrated circuit (PIC) coupled with a substrate. The PIC may communicate a photonic signal with one or more optical fibers. The PIC may process the photonic signal into an electronic signal. The electronic device may include an electronic integrated circuit (EIC) coupled with the substrate. The EIC may communicate with the PIC. The EIC may transmit the electronic signal to the PIC. The EIC may receive the electronic signal from the PIC. The electronic device may include a lens assembly. The lens assembly may include at least one gradient refractive index (GRIN) lens.

Abstract: Stacked die assemblies having a moisture sealant layer according to embodiments are described herein. A microelectronic package structure having a first die with a second and an adjacent third die on the first die. Each of the second and third die comprise hybrid bonding interfaces with the first die. A first layer is on a region of the first die adjacent sidewalls of the second and the third dies, and adjacent an edge portion of the first die. The first layer comprises a diffusion barrier material A second layer is over the first layer, the second layer, wherein a top surface of the second layer is substantially coplanar with the top surfaces of the second and third dies. The first layer provides a hermetic moisture sealant layer for stacked die package structures.

Abstract: An electronic device may include a photonic integrated circuit (PIC) coupled with a substrate. The PIC may communicate a photonic signal with one or more optical fibers. The PIC may process the photonic signal into an electronic signal. The PIC may extend between a first end and a second end. An electronic integrated circuit (EIC) may be coupled with the substrate. The EIC may communicate with the PIC. The EIC may transmit the electronic signal to the PIC. The EIC may receive the electronic signal from the PIC. The electronic device may include a lens assembly. The lens assembly may be coupled with the first end of the PIC. In an example, optical interconnects of the PIC are aligned with the lens assembly such that the lens assembly is configured to transmit the photonic signal communicated between PIC and the optical fibers.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device includes a laser package. In selected examples, the laser package can include a substrate having a substrate front surface and defining a cavity that extends into the substrate front surface. The laser package can further include a photonic integrated circuit (PIC) attached to the substrate within the cavity at a first surface of the PIC, and laser circuitry communicably coupled to a second surface of the PIC opposite the first surface.

Abstract: An electronic assembly that includes a substrate having an upper surface and a bridge that includes an upper surface. The bridge is within a cavity in the upper surface of the substrate. A first electronic component is attached to the upper surface of the bridge and the upper surface of the substrate and a second electronic component is attached to the upper surface of the bridge and the upper surface of the substrate, wherein the bridge electrically connects the first electronic component to the second electronic component.

Abstract: Embodiments include an electronic package that includes a radio frequency (RF) front end. In an embodiment, the RF front end may comprise a package substrate and a first die attached to a first surface of the package substrate. In an embodiment, the first die may include CMOS components. In an embodiment, the RF front end may further comprise a second die attached to the first surface of the package substrate. In an embodiment, the second die may comprise amplification circuitry. In an embodiment, the RF front end may further comprise an antenna attached to a second surface of the package substrate. In an embodiment, the second surface is opposite from the first surface.

Abstract: A wide bandwidth signal connector plug, comprising a plurality of signal pins having a first anchor portion and a first mating portion, and a plurality of ground pins having a second anchor portion and a second mating portion. The plurality of ground pins is adjacent to the plurality of signal pins. The plurality of signal pins has a first thickness and the plurality of ground pins has a second thickness that is greater than the first thickness. The first anchor portion has a first width and the second anchor portion has a second width that is greater than the first width.