Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The electron blocking layer is located between the active region and the p-type contact layer. In an embodiment, the electron blocking layer can include a plurality of sublayers that vary in composition.

Abstract: There is set forth herein obtaining data traffic monitoring data, the data traffic monitoring data being in dependence on monitoring of traffic received by a container of a protected computing environment; obtaining data traffic monitoring data, the data traffic monitoring data being in dependence on monitoring of traffic received by a processing resource of a computing environment; obtaining a state of the processing resource and provisioning a utility processing resource to include the state of the processing resource; and configuring the computing environment to route data traffic to the utility processing resource.

Abstract: An ophthalmic lens having a front surface and a back surface, wherein at least one of the front and back surfaces is aspherical and said aspherical surface comprises: a neutral region, located substantially in the center of the lens, in which the addition power and the cylinder power are both negligible, and a functional region, located next to the neutral region and in a periphery of at least a lower half of said aspherical surface, in which the addition power and the cylinder power are increasing radially toward the periphery of the lens. Spectacles having such lenses and methods for designing and manufacturing such lenses.

Abstract: One embodiment provides a semiconducting device for at least one of detecting, producing or manipulating electromagnetic radiation having a frequency of at least 100 gigahertz (GHz). The semiconducting device includes a heterodimensional plasmonic structure, and an active layer. The heterodimensional plasmonic structure includes at least one nanostructure configured to form a heterodimensional junction with the active layer and having a tunable resonant plasmon frequency.

Abstract: A mounting structure for mounting a set of optoelectronic devices is provided. A mounting structure for a set of optoelectronic devices can include: a body formed of an insulating material; and a heatsink element embedded within the body. A heatsink can be located adjacent to the mounting structure. The set of optoelectronic devices can be mounted on a side of the mounting structure opposite of the heatsink.

Abstract: A computer-program product, a system, and a computer-implemented method include a processor(s) obtaining a configuration of a network including configurations of multiple network nodes and configurations of the network communication devices. The program code automatically models the network to generate a system model. The program code derives, from the system model, a loop-free Bayesian inference model, by generating a loop-free Bayesian network from the network.

Abstract: An approach for controlling ultraviolet intensity over a surface of a light sensitive object is described. Aspects involve using ultraviolet radiation with a wavelength range that includes ultraviolet-A and ultraviolet-B radiation to irradiate the surface. Light sensors measure light intensity at the surface, wherein each sensor measures light intensity in a wavelength range that corresponds to a wavelength range emitted from at least one of the sources. A controller controls the light intensity over the surface by adjusting the power of the sources as a function of the light intensity measurements. The controller uses the light intensity measurements to determine whether each source is illuminating the surface with an intensity that is within an acceptable variation with a predetermined intensity value targeted for the surface. The controller adjusts the power of the sources as a function of the variation to ensure an optimal distribution of light intensity over the surface.

Abstract: A resin composition is provided.

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

Abstract: An approach for controlling light exposure of a light sensitive object is described. Aspects of this approach involve using a first set of radiation sources to irradiate the object with visible radiation and infrared radiation. A second set of radiation sources spot irradiate the object in a set of locations with a target ultraviolet radiation having a range of wavelengths. Radiation sensors detect radiation reflected from the object and environment condition sensors detect conditions of the environment in which the object is located during irradiation. A controller controls irradiation of the light sensitive object by the first and second set of radiation sources according to predetermined optimal irradiation settings specified for various environmental conditions. In addition, the controller adjusts irradiation settings of the first and second set of radiation sources as a function of measurements obtained by the various sensors.

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

Abstract: There is described a system and method for managing timeseries data. A timeseries consumer receives timeseries data from multiple devices, provides the timeseries data to a particular partition of a data table based on an insert time of the timeseries data to the data table, and records metadata associated with the timeseries data provided to the particular partition at a track table. A timeseries archiver identifies recent records of the data table based on insert time(s) and archival time(s) of a milestone table, archives the timeseries data of the data table associated with the recent records to an external system, and updates the archival time(s) of the milestone table and the track table. The timeseries purger drops an archived partition of the data table based on determining that all records of the archived partition have been archived.

Abstract: A mounting structure for mounting a set of optoelectronic devices is provided. A mounting structure for a set of optoelectronic devices can include: a body formed of an insulating material; and a heatsink element embedded within the body. A heatsink can be located adjacent to the mounting structure. The set of optoelectronic devices can be mounted on a side of the mounting structure opposite of the heatsink.

Abstract: A scintillator assembly including an entrance surface for receiving charged particles into the scintillator assembly, the charged particles including first charged particles at a first energy level and second charged particles at a second energy level. A first scintillator structure configured for receiving the first charged particles and generating a corresponding first signal formed of first photons with a first wavelength of ?1, a second scintillator structure configured for receiving the second charged particles and generating a corresponding second signal of second photons with a second wavelength of ?2, and an emitting surface for egress of a combined signal from the scintillator assembly, the combined signal including the first and second photons, and at least one beam splitter for receiving the combined signal and separating the combined signal to first and second photons.

Abstract: A prepreg is provided. The prepreg is prepared by impregnating a liquid crystal polymer non-woven fabric with a thermal-curable resin composition or by coating a thermal-curable resin composition onto a liquid crystal polymer non-woven fabric and drying the impregnated or coated liquid crystal polymer non-woven fabric, wherein the thermal-curable resin composition includes: (A) an unsaturated monomer; and (B) a cyclic olefin copolymer including the following repeating units: (B-1) a repeating unit of formula (I), (B-2) a repeating unit of formula (II), and (B-3) a repeating unit of formula (III), R1 to R22, m, n, o, and p in formulas (I) to (III) are as defined in the specification, wherein based on the total moles of the repeating units (B-1) to (B-3), the content of the repeating unit (B-2) is 19 mol % to 36 mol %, and wherein the weight ratio of the cyclic olefin copolymer (B) to the unsaturated monomer (A) is 0.5 to 7.

Abstract: A solution for controlling mildew in a cultivated area is described. The solution can include a set of ultraviolet sources that are configured to emit ultraviolet and/or blue-ultraviolet radiation to harm mildew present on a plant or ground surface. A set of sensors can be utilized to acquire plant data for at least one plant surface of a plant, which can be processed to determine a presence of mildew on the at least one plant surface. Additional features can be included to further affect the growth environment for the plant. A feedback process can be implemented to improve one or more aspects of the growth environment.

Abstract: An approach for controlling light exposure of a light sensitive object is described. Aspects of this approach involve using a first set of radiation sources to irradiate the object with visible radiation and infrared radiation. A second set of radiation sources spot irradiate the object in a set of locations with a target ultraviolet radiation having a range of wavelengths. Radiation sensors detect radiation reflected from the object and environment condition sensors detect conditions of the environment in which the object is located during irradiation. A controller controls irradiation of the light sensitive object by the first and second set of radiation sources according to predetermined optimal irradiation settings specified for various environmental conditions. In addition, the controller adjusts irradiation settings of the first and second set of radiation sources as a function of measurements obtained by the various sensors.

Abstract: A diffusive layer including a laminate of a plurality of transparent films is provided. At least one of the plurality of transparent films includes a plurality of diffusive elements with a concentration that is less than a percolation threshold. The plurality of diffusive elements are optical elements that diffuse light that is impinging on such element. The plurality of diffusive elements can be diffusively reflective, diffusively transmitting or combination of both. The plurality of diffusive elements can include fibers, grains, domains, and/or the like. The at least one film can also include a powder material for improving the diffusive emission of radiation and a plurality of particles that are fluorescent when exposed to radiation.

Abstract: Various embodiments disclose a quasi progressive lens including a first optical zone capable of providing distance vision, a second optical zone capable of providing near vision and a transition zone connecting the first and second optical zones. Physical dimensions (e.g., length and width) of the transition zone are adjusted to increase the size of the second optical zone in comparison to progressive lenses and to reduce residual cylinder power and aberrations along the convergence path in comparison to bifocal lenses.

Abstract: Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.