Patents by Inventor Oray Orkun Cellek
Oray Orkun Cellek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10687003Abstract: A pixel array for use in a high dynamic range image sensor includes a plurality of pixels arranged in a plurality of rows and columns in the pixel array. Each one of the pixels includes a linear subpixel and a log subpixel disposed in a semiconductor material. The linear subpixel is coupled to generate a linear output signal having a linear response, and the log subpixel is coupled to generate a log output signal having a logarithmic response in response to the incident light. A bitline is coupled to the linear subpixel and to the log subpixel to receive the linear output signal and the log output signal. The bitline is one of a plurality of bitlines coupled to the plurality of pixels. Each one of the plurality of bitlines is coupled to a corresponding grouping of the plurality of pixels.Type: GrantFiled: August 4, 2016Date of Patent: June 16, 2020Assignee: OmniVision Technologies, Inc.Inventors: Keiji Mabuchi, Dyson H. Tai, Oray Orkun Cellek, Duli Mao, Sohei Manabe
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Patent number: 10559615Abstract: A method for manufacturing a high-dynamic-range color image sensor includes (a) depositing a color filter layer on a silicon substrate having a photosensitive pixel array with a plurality of first pixels and a plurality of second pixels, to form (i) a plurality of first color filters above a first subset of each of the plurality of first pixels and the plurality of second pixels and (ii) a plurality of second color filters above a second subset of each of the plurality of first pixels and the plurality of second pixels, wherein thickness of the second color filters exceeds thickness of the first color filters, and (b) depositing, on the color filter layer, a dynamic-range extending layer including grey filters above the second pixels to attenuate light propagating toward the second pixels, combined thickness of the color filter layer and the dynamic-range extending layer being uniform across the photosensitive pixel array.Type: GrantFiled: April 2, 2018Date of Patent: February 11, 2020Assignee: OmniVision Technologies, Inc.Inventors: Chen-Wei Lu, Dajiang Yang, Oray Orkun Cellek, Duli Mao
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Patent number: 10481439Abstract: A liquid crystal display includes a display area and a border area at least partially surrounding the display area, where the display area displays images for viewing and the border area displays display-protection images, which are used to control ion migration in the liquid crystal layer. In a more particular embodiment, the border area displays a series of checkerboard pattern(s), where the checkerboard patterns can alternate between initial and inverted values. The display-protection images protect the liquid crystal display from migrating ions accumulating in particular regions of the pixel array and causing permanent defects in the display area. A liquid crystal display that includes a liquid crystal alignment layer having a plurality of liquid crystal alignment directions is also disclosed. The customized liquid crystal alignment director(s) over the border area promote ion migration away from the display area.Type: GrantFiled: November 21, 2016Date of Patent: November 19, 2019Assignee: OmniVision Technologies, Inc.Inventors: Christopher Morgan Walker, Libo Weng, Oray Orkun Cellek, Ming Zhang, Yin Qian, Dyson Hsin-Chih Tai, Regis Fan
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Patent number: 10429699Abstract: A liquid crystal display includes a display area and a border area at least partially surrounding the display area, where the display area displays images for viewing and the border area displays display-protection images, which are used to control ion migration in the liquid crystal layer. In a more particular embodiment, the border area displays a series of checkerboard pattern(s), where the checkerboard patterns can alternate between initial and inverted values. The display-protection images protect the liquid crystal display from migrating ions accumulating in particular regions of the pixel array and causing permanent defects in the display area. A liquid crystal display that includes a liquid crystal alignment layer having a plurality of liquid crystal alignment directions is also disclosed. The customized liquid crystal alignment director(s) over the border area promote ion migration away from the display area.Type: GrantFiled: February 9, 2017Date of Patent: October 1, 2019Assignee: OmniVision Technologies, Inc.Inventors: Christopher Morgan Walker, Libo Weng, Oray Orkun Cellek, Ming Zhang, Yin Qian, Dyson Hsin-Chih Tai, Regis Fan
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Patent number: 10411063Abstract: A single-exposure high dynamic range (HDR) image sensor includes a first photodiode and a second photodiode, with a smaller full-well capacity than the first photodiode, disposed in a semiconductor material. The image sensor also includes a first floating diffusion disposed in the semiconductor material and a first transfer gate coupled to the first photodiode to transfer first image charge accumulated in the first photodiode into the first floating diffusion. A second floating diffusion is disposed in the semiconductor material and a second transfer gate is coupled to the second photodiode to transfer second image charge accumulated in the second photodiode into the second floating diffusion. An attenuation layer is disposed between the second photodiode and image light directed towards the single-exposure HDR image sensor to block a portion of the image light from reaching the second photodiode.Type: GrantFiled: June 20, 2017Date of Patent: September 10, 2019Assignee: OmniVision Technologies, Inc.Inventors: Dajiang Yang, Oray Orkun Cellek, Duli Mao, Xianfu Cheng, Xin Wang, Bill Phan, Dyson Tai
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Patent number: 10317733Abstract: An alignment layer for a liquid crystal on silicon (LCOS) display includes a nano-particle layer. In a particular embodiment the nano-particle layer includes a lower nano-layer and an upper nano-layer, each formed onto oxide layers of the LCOS display. In a more particular embodiment, the lower nano-layer and the upper nano-layer are offset printed onto the oxide layers.Type: GrantFiled: October 26, 2016Date of Patent: June 11, 2019Assignee: OmniVision Technologies, Inc.Inventors: Ming Zhang, Yin Qian, Libo Weng, Oray Orkun Cellek, Dyson Hsin-Chih Tai, Lequn Liu, Dominic Massetti
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Patent number: 10236320Abstract: A method of manufacturing a fractal-edge thin film includes determining an area shape to be covered by the fractal-edge thin film. The method also includes generating a thin-film perimeter based upon the area shape, the thin-film perimeter having a fractal dimension exceeding one. The method also includes determining a photomask perimeter such that a photomask with the photomask perimeter, when used in a photolithography process, yields a fractal-edge thin film with the thin-film perimeter. The method may also include photolithographically etching a thin-film, the thin film having a photoresist layer disposed thereon, the photoresist layer having been exposed through the photomask, wherein the etching results in the fractal-edge thin film.Type: GrantFiled: September 16, 2016Date of Patent: March 19, 2019Assignee: OmniVision Technologies, Inc.Inventor: Oray Orkun Cellek
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Publication number: 20180366513Abstract: A single-exposure high dynamic range (HDR) image sensor includes a first photodiode and a second photodiode, with a smaller full-well capacity than the first photodiode, disposed in a semiconductor material. The image sensor also includes a first floating diffusion disposed in the semiconductor material and a first transfer gate coupled to the first photodiode to transfer first image charge accumulated in the first photodiode into the first floating diffusion. A second floating diffusion is disposed in the semiconductor material and a second transfer gate is coupled to the second photodiode to transfer second image charge accumulated in the second photodiode into the second floating diffusion. An attenuation layer is disposed between the second photodiode and image light directed towards the single-exposure HDR image sensor to block a portion of the image light from reaching the second photodiode.Type: ApplicationFiled: June 20, 2017Publication date: December 20, 2018Inventors: Dajiang Yang, Oray Orkun Cellek, Duli Mao, Xianfu Cheng, Xin Wang, Bill Phan, Dyson Tai
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Publication number: 20180226445Abstract: A method for manufacturing a high-dynamic-range color image sensor includes (a) depositing a color filter layer on a silicon substrate having a photosensitive pixel array with a plurality of first pixels and a plurality of second pixels, to form (i) a plurality of first color filters above a first subset of each of the plurality of first pixels and the plurality of second pixels and (ii) a plurality of second color filters above a second subset of each of the plurality of first pixels and the plurality of second pixels, wherein thickness of the second color filters exceeds thickness of the first color filters, and (b) depositing, on the color filter layer, a dynamic-range extending layer including grey filters above the second pixels to attenuate light propagating toward the second pixels, combined thickness of the color filter layer and the dynamic-range extending layer being uniform across the photosensitive pixel array.Type: ApplicationFiled: April 2, 2018Publication date: August 9, 2018Inventors: Chen-Wei LU, Dajiang YANG, Oray Orkun CELLEK, Duli MAO
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Patent number: 10044960Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.Type: GrantFiled: May 25, 2016Date of Patent: August 7, 2018Assignee: OmniVision Technologies, Inc.Inventors: Duli Mao, Trygve Willassen, Johannes Solhusvik, Keiji Mabuchi, Gang Chen, Sohei Manabe, Dyson H. Tai, Bill Phan, Oray Orkun Cellek, Zhiqiang Lin, Siguang Ma, Dajiang Yang, Boyd Albert Fowler
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Publication number: 20180144710Abstract: A liquid crystal display includes a display area and a border area at least partially surrounding the display area, where the display area displays images for viewing and the border area displays display-protection images, which are used to control ion migration in the liquid crystal layer. In a more particular embodiment, the border area displays a series of checkerboard pattern(s), where the checkerboard patterns can alternate between initial and inverted values. The display-protection images protect the liquid crystal display from migrating ions accumulating in particular regions of the pixel array and causing permanent defects in the display area. A liquid crystal display that includes a liquid crystal alignment layer having a plurality of liquid crystal alignment directions is also disclosed. The customized liquid crystal alignment director(s) over the border area promote ion migration away from the display area.Type: ApplicationFiled: November 21, 2016Publication date: May 24, 2018Applicant: OmniVision Technologies, Inc.Inventors: Christopher Morgan Walker, Libo Weng, Oray Orkun Cellek, Ming Zhang, Yin Qian, Dyson Hsin-Chih Tai, Regis Fan
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Publication number: 20180143498Abstract: A liquid crystal display includes a display area and a border area at least partially surrounding the display area, where the display area displays images for viewing and the border area displays display-protection images, which are used to control ion migration in the liquid crystal layer. In a more particular embodiment, the border area displays a series of checkerboard pattern(s), where the checkerboard patterns can alternate between initial and inverted values. The display-protection images protect the liquid crystal display from migrating ions accumulating in particular regions of the pixel array and causing permanent defects in the display area. A liquid crystal display that includes a liquid crystal alignment layer having a plurality of liquid crystal alignment directions is also disclosed. The customized liquid crystal alignment director(s) over the border area promote ion migration away from the display area.Type: ApplicationFiled: February 9, 2017Publication date: May 24, 2018Applicant: OmniVision Technologies, Inc.Inventors: Christopher Morgan Walker, Libo Weng, Oray Orkun Cellek, Ming Zhang, Yin Qian, Dyson Hsin-Chih Tai, Regis Fan
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Publication number: 20180113336Abstract: An alignment layer for a liquid crystal on silicon (LCOS) display includes a nano-particle layer. In a particular embodiment the nano-particle layer includes a lower nano-layer and an upper nano-layer, each formed onto oxide layers of the LCOS display. In a more particular embodiment, the lower nano-layer and the upper nano-layer are offset printed onto the oxide layers.Type: ApplicationFiled: October 26, 2016Publication date: April 26, 2018Applicant: OmniVision Technologies, Inc.Inventors: Ming Zhang, Yin Qian, Libo Weng, Oray Orkun Cellek, Dyson Hsin-Chih Tai, Lequn Liu, Dominic Massetti
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Patent number: 9955090Abstract: An image sensor includes a plurality of photodetectors that are identically sized and fabricated in semiconductor material with identical semiconductor processing conditions. The photodetectors are organized into virtual high-low sensitivity groupings, each including a first photodetector and a second photodetector. A plurality of attenuators is disposed over the semiconductor material. Each one of the plurality of attenuators is disposed along an optical path between a microlens and the first photodetector of each virtual high-low sensitivity grouping such that all incident light directed into the first photodetector is directed through a respective one of the plurality of attenuators. There is no attenuator along a second optical path between a microlens and the second photodetector of each virtual high-low sensitivity grouping such that all the incident light directed into the second photodetector is not directed through one of the plurality of attenuators.Type: GrantFiled: July 20, 2016Date of Patent: April 24, 2018Assignee: OmniVision Technologies, Inc.Inventors: Dajiang Yang, Gang Chen, Oray Orkun Cellek, Xin Wang, Chen-Wei Lu, Duli Mao, Dyson H. Tai
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Patent number: 9954020Abstract: A high-dynamic-range color image sensor includes (a) a silicon substrate having a photosensitive pixel array with a plurality of first pixels and a plurality of second pixels, (b) a color filter layer disposed on the silicon substrate and including at least (i) a plurality of first color filters positioned above a first subset of each of the plurality of first pixels and the plurality of second pixels and configured to selectively transmit light of a first color and (ii) a plurality of second color filters positioned above a second subset of each of the plurality of first pixels and the plurality of second pixels and configured to selectively transmit light of a second color, and (c) a dynamic-range extending layer disposed on the color filter layer and including grey filters disposed above the second plurality of pixels to attenuate light propagating toward the second plurality of pixels.Type: GrantFiled: December 30, 2016Date of Patent: April 24, 2018Assignee: OmniVision Technologies, Inc.Inventors: Chen-Wei Lu, Dajiang Yang, Oray Orkun Cellek, Duli Mao
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Publication number: 20180098008Abstract: Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity.Type: ApplicationFiled: October 4, 2016Publication date: April 5, 2018Inventors: Duli Mao, Trygve Willassen, Johannes Solhusvik, Keiji Mabuchi, Gang Chen, Sohei Manabe, Dyson H. Tai, Bill Phan, Oray Orkun Cellek, Zhiqiang Lin
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Patent number: 9936153Abstract: Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity.Type: GrantFiled: October 4, 2016Date of Patent: April 3, 2018Assignee: OmniVision Technologies, Inc.Inventors: Duli Mao, Trygve Willassen, Johannes Solhusvik, Keiji Mabuchi, Gang Chen, Sohei Manabe, Dyson H. Tai, Bill Phan, Oray Orkun Cellek, Zhiqiang Lin
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Patent number: 9911773Abstract: An image sensor includes photodiodes arranged in semiconductor material. Each of the photodiodes is identically sized and is fabricated in the semiconductor material with identical semiconductor processing conditions. The photodiodes are organized into virtual large-small groupings including a first photodiode and a second photodiode. Microlenses are disposed over the semiconductor material with each of microlenses disposed over a respective photodiode. A first microlens is disposed over the first photodiode, and a second microlens is disposed over the second photodiode. A mask is disposed between the first microlens and the first photodiode. The mask includes an opening through which a first portion of incident light directed through the first microlens is directed to the first photodiode. A second portion of the incident light directed through the first microlens is blocked by the mask from reaching the first photodiode. There is no mask between the second microlens and the second photodiode.Type: GrantFiled: June 18, 2015Date of Patent: March 6, 2018Assignee: OmniVision Technologies, Inc.Inventors: Dajiang Yang, Gang Chen, Oray Orkun Cellek, Zhenhong Fu, Chen-Wei Lu, Duli Mao, Dyson H. Tai
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Publication number: 20180041723Abstract: A pixel array for use in a high dynamic range image sensor includes a plurality of pixels arranged in a plurality of rows and columns in the pixel array. Each one of the pixels includes a linear subpixel and a log subpixel disposed in a semiconductor material. The linear subpixel is coupled to generate a linear output signal having a linear response, and the log subpixel is coupled to generate a log output signal having a logarithmic response in response to the incident light. A bitline is coupled to the linear subpixel and to the log subpixel to receive the linear output signal and the log output signal. The bitline is one of a plurality of bitlines coupled to the plurality of pixels. Each one of the plurality of bitlines is coupled to a corresponding grouping of the plurality of pixels.Type: ApplicationFiled: August 4, 2016Publication date: February 8, 2018Inventors: Keiji Mabuchi, Dyson H. Tai, Oray Orkun Cellek, Duli Mao, Sohei Manabe
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Publication number: 20180027196Abstract: An image sensor includes a plurality of photodetectors that are identically sized and fabricated in semiconductor material with identical semiconductor processing conditions. The photodetectors are organized into virtual high-low sensitivity groupings, each including a first photodetector and a second photodetector. A plurality of attenuators is disposed over the semiconductor material. Each one of the plurality of attenuators is disposed along an optical path between a microlens and the first photodetector of each virtual high-low sensitivity grouping such that all incident light directed into the first photodetector is directed through a respective one of the plurality of attenuators. There is no attenuator along a second optical path between a microlens and the second photodetector of each virtual high-low sensitivity grouping such that all the incident light directed into the second photodetector is not directed through one of the plurality of attenuators.Type: ApplicationFiled: July 20, 2016Publication date: January 25, 2018Inventors: Dajiang Yang, Gang Chen, Oray Orkun Cellek, Xin Wang, Chen-Wei Lu, Duli Mao, Dyson H. Tai