Patents by Inventor Osamu Fujita
Osamu Fujita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12077677Abstract: Provided is a method for producing a cured product film, which is capable of increasing the formation accuracy of a fine cured product film and also increasing the adhesion of the cured product film. The method for producing a curable film according to the present invention includes an application step in which a curable composition that is photocurable and thermocurable and also is in liquid form is applied using an ink jet device, a first light irradiation step in which the curable composition is irradiated with light from a first light irradiation part, and a heating step in which a precured product film irradiated with light is heated, the ink jet device has an ink tank to store the curable composition, a discharge part, and a circulation flow path part, and in the application step, the curable composition is applied while being circulated in the ink jet device.Type: GrantFiled: December 10, 2021Date of Patent: September 3, 2024Assignee: SEKISUI CHEMICAL CO., LTD.Inventors: Mitsuru Tanikawa, Takashi Watanabe, Michihisa Ueda, Shigeru Nakamura, Hiroshi Maenaka, Ryosuke Takahashi, Takanori Inoue, Yoshito Fujita, Osamu Inui
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Patent number: 12070719Abstract: According to one embodiment, a gas processing equipment includes an oxygen remover 2 that removes oxygen contained in exhaust gas G, and a gas processing device 3 that processes pretreated exhaust gas G (P), from which the oxygen has been removed by the oxygen remover 2, with a carbon dioxide absorbent solvent S as a treatment agent.Type: GrantFiled: March 15, 2022Date of Patent: August 27, 2024Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATIONInventors: Daigo Muraoka, Koshito Fujita, Shinji Murai, Hayato Morigaki, Osamu Shibasaki, Yasuhiro Kato, Satoshi Saito, Takehiko Muramatsu, Ryosuke Shibata, Yusuke Handa
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Publication number: 20220238236Abstract: Methods and systems to train a global model to estimate numbers of patients treated for each of multiple medical conditions by a medical facility, based on medicines administered by the medical facility. Training of the model may be tailored for a situation in which a first one of the medicines is administered for a plurality of the medical conditions and a second one of the medicines is administered for a subset of the plurality of medical conditions. Where the medicines include a general medicine administered for a plurality of the medical conditions, and one or more exclusive medicines, each administered for a respective one of the plurality of medical conditions, parameters of the model may be modified for the selected medical facility based a ratio at which the selected medical facility administers the general medicine amongst patients of a plurality of the diseases.Type: ApplicationFiled: March 29, 2021Publication date: July 28, 2022Inventors: Xiaojun MA, Shuichi BEPPU, Matsuru YAMAZAKI, Osamu FUJITA, Genryou UMITSUKI
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Patent number: 11393828Abstract: A semiconductor device comprises laterally-neighboring word lines having respective word line caps thereon, an active region between the laterally-neighboring word lines and word line caps, an insulating material and a semiconductive material adjacent the word line caps, and a digit line contact between opposing substantially vertical surfaces of the semiconductive material, between opposing substantially vertical surfaces of the insulating material, adjacent to substantially horizontal surfaces of the word line caps, and between opposing substantially vertical surfaces of the word line caps. A transition surface extending between and connecting the substantially horizontal surface and the substantially vertical surface of the respective word line caps projects toward a longitudinal axis extending centrally through the digit line contact. Methods of forming the semiconductor device are also disclosed, as are electronic systems including the semiconductor device.Type: GrantFiled: August 27, 2020Date of Patent: July 19, 2022Assignee: Micron Technology, Inc.Inventors: Naoyoshi Kobayashi, Osamu Fujita, Katsumi Koge
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Publication number: 20200395365Abstract: A semiconductor device comprises laterally-neighboring word lines having respective word line caps thereon, an active region between the laterally-neighboring word lines and word line caps, an insulating material and a semiconductive material adjacent the word line caps, and a digit line contact between opposing substantially vertical surfaces of the semiconductive material, between opposing substantially vertical surfaces of the insulating material, adjacent to substantially horizontal surfaces of the word line caps, and between opposing substantially vertical surfaces of the word line caps. A transition surface extending between and connecting the substantially horizontal surface and the substantially vertical surface of the respective word line caps projects toward a longitudinal axis extending centrally through the digit line contact. Methods of forming the semiconductor device are also disclosed, as are electronic systems including the semiconductor device.Type: ApplicationFiled: August 27, 2020Publication date: December 17, 2020Inventors: Naoyoshi Kobayashi, Osamu Fujita, Katsumi Koge
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Patent number: 10770466Abstract: A semiconductor device comprises laterally-neighboring word lines having respective word line caps thereon, an active region between the laterally-neighboring word lines and word line caps, an insulating material and a semiconductive material adjacent the word line caps, and a digit line contact between opposing substantially vertical surfaces of the semiconductive material, between opposing substantially vertical surfaces of the insulating material, adjacent to substantially horizontal surfaces of the word line caps, and between opposing substantially vertical surfaces of the word line caps. A transition surface extending between and connecting the substantially horizontal surface and the substantially vertical surface of the respective word line caps projects toward a longitudinal axis extending centrally through the digit line contact. Methods of forming the semiconductor device are also disclosed, as are electronic systems including the semiconductor device.Type: GrantFiled: January 25, 2019Date of Patent: September 8, 2020Assignee: Micron Technology, Inc.Inventors: Naoyoshi Kobayashi, Osamu Fujita, Katsumi Koge
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Publication number: 20200243539Abstract: A semiconductor device comprises laterally-neighboring word lines having respective word line caps thereon, an active region between the laterally-neighboring word lines and word line caps, an insulating material and a semiconductive material adjacent the word line caps, and a digit line contact between opposing substantially vertical surfaces of the semiconductive material, between opposing substantially vertical surfaces of the insulating material, adjacent to substantially horizontal surfaces of the word line caps, and between opposing substantially vertical surfaces of the word line caps. A transition surface extending between and connecting the substantially horizontal surface and the substantially vertical surface of the respective word line caps projects toward a longitudinal axis extending centrally through the digit line contact. Methods of forming the semiconductor device are also disclosed, as are electronic systems including the semiconductor device.Type: ApplicationFiled: January 25, 2019Publication date: July 30, 2020Inventors: Naoyoshi Kobayashi, Osamu Fujita, Katsumi Koge
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Patent number: 9443790Abstract: A semiconductor device includes a semiconductor substrate having a first surface, a through silicon via (TSV) that is formed so that at least a part thereof penetrates through the semiconductor substrate, and an insulation ring. The insulation ring is formed so as to penetrate through the semiconductor substrate and so as to surround the TSV. The insulation ring includes a tapered portion and a vertical portion. The tapered portion has a sectional area which is gradually decreased from the first surface toward a thickness direction of the semiconductor substrate. The vertical portion has a constant sectional area smaller than the tapered portion.Type: GrantFiled: January 22, 2014Date of Patent: September 13, 2016Assignee: PS4 Luxco S.a.r.l.Inventor: Osamu Fujita
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Patent number: 9004029Abstract: A variable valve actuating apparatus includes: a first rotary member which includes a rotor fixed to one of the inner cam shaft and the outer cam shaft, and a receiving chamber formed within the first rotary member, and which is arranged to be rotated in an advance angle direction or in a retard angle direction relative to the drive rotary member by a hydraulic pressure selectively supplied to or drained from the advance angle operation chamber and the retard angle operation chamber; and a second rotary member fixed to the other of the inner cam shaft and the outer cam shaft, rotatably received within the receiving chamber of the first rotary member, and arranged to be rotated relative to the first rotary member and the drive rotary member within a predetermined angle range.Type: GrantFiled: April 22, 2013Date of Patent: April 14, 2015Assignee: Hitachi Automotive Systems, Ltd.Inventors: Atsushi Watanabe, Osamu Fujita, Tomoya Tsukada
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Patent number: 8936948Abstract: A hard mask, a protective film, which protects the hard mask film from oxidation, a first mask film and a first organic film are sequentially stacked. The first organic film is processed into a first pattern, and the first mask film is etched using the patterned first organic film as a mask. After the first organic film is removed, a second organic film is formed. The second organic film is processed into a second pattern. The first mask film is secondary etched using the patterned second organic film as a mask so that the surface of the first mask film is exposed but the surface of the protective film is not exposed, thereby selectively patterning only the first mask film. After that, when removing the residual second organic film by ashing, it is possible to ensure the function of the protective film that protects the hard mask film from oxidation.Type: GrantFiled: July 26, 2012Date of Patent: January 20, 2015Assignee: PS4 Luxco S.A.R.L.Inventor: Osamu Fujita
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Patent number: 8863708Abstract: Even if an internal combustion engine is stopped having a lock pin of a vane rotor kept disengaged from a lock recess, subsequent engine starting can instantly move the vane rotor to a desired angular position where the lock member an be engaged with the lock recess. The vane rotor has therein two passage control mechanisms each having a hydraulically actuated valve body. When the valve body is moved to a given position, retarding and advancing hydraulic holes become communicated to each other through an annular groove of the valve body. Due to this ON communication, retarding and advancing operation chambers become communicated, so that reciprocative swing movement of the vane rotor induced by an alternating torque produced at the starting of the engine is effectively made and thus the vane rotor can be quickly turned to the desired angular position for ease of engine starting.Type: GrantFiled: September 13, 2012Date of Patent: October 21, 2014Assignee: Hitachi Automotive Systems, Ltd.Inventors: Atsushi Watanabe, Yasuhide Takada, Osamu Fujita, Tetsuya Shibukawa
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Patent number: 8847400Abstract: A semiconductor device comprises a material layer including a first surface and a trench with an opening in the first surface. The trench is formed in the material layer. The trench comprises a tapered portion and a vertical portion. The tapered portion is in contact with the opening and comprises a scalloping-forming trench. The vertical portion has a substantially vertical sidewall. A width of the scalloping-forming trench is larger than a width of the vertical portion.Type: GrantFiled: February 29, 2012Date of Patent: September 30, 2014Assignee: PS4 Luxco S.A.R.L.Inventors: Osamu Fujita, Yuki Togashi
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Publication number: 20140217560Abstract: A semiconductor device includes a semiconductor substrate having a first surface, a through silicon via (TSV) that is formed so that at least a part thereof penetrates through the semiconductor substrate, and an insulation ring. The insulation ring is formed so as to penetrate through the semiconductor substrate and so as to surround the TSV. The insulation ring includes a tapered portion and a vertical portion. The tapered portion has a sectional area which is gradually decreased from the first surface toward a thickness direction of the semiconductor substrate. The vertical portion has a constant sectional area smaller than the tapered portion.Type: ApplicationFiled: January 22, 2014Publication date: August 7, 2014Applicant: Elpida Memory, Inc.Inventor: Osamu FUJITA
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Patent number: 8659152Abstract: A semiconductor device includes a semiconductor substrate having a first surface, a through silicon via (TSV) that is formed so that at least a part thereof penetrates through the semiconductor substrate, and an insulation ring. The insulation ring is formed so as to penetrate through the semiconductor substrate and so as to surround the TSV. The insulation ring includes a tapered portion and a vertical portion. The tapered portion has a sectional area which is gradually decreased from the first surface toward a thickness direction of the semiconductor substrate. The vertical portion has a constant sectional area smaller than the tapered portion.Type: GrantFiled: September 7, 2011Date of Patent: February 25, 2014Inventor: Osamu Fujita
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Publication number: 20130284132Abstract: A variable valve actuating apparatus includes: a first rotary member which includes a rotor fixed to one of the inner cam shaft and the outer cam shaft, and a receiving chamber formed within the first rotary member, and which is arranged to be rotated in an advance angle direction or in a retard angle direction relative to the drive rotary member by a hydraulic pressure selectively supplied to or drained from the advance angle operation chamber and the retard angle operation chamber; and a second rotary member fixed to the other of the inner cam shaft and the outer cam shaft, rotatably received within the receiving chamber of the first rotary member, and arranged to be rotated relative to the first rotary member and the drive rotary member within a predetermined angle range.Type: ApplicationFiled: April 22, 2013Publication date: October 31, 2013Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.Inventors: Atsushi WATANABE, Osamu Fujita, Tomoya Tsukada
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Publication number: 20130233261Abstract: Even if an internal combustion engine is stopped having a lock pin of a vane rotor kept disengaged from a lock recess, subsequent engine starting can instantly move the vane rotor to a desired angular position where the lock member an be engaged with the lock recess. The vane rotor has therein two passage control mechanisms each having a hydraulically actuated valve body. When the valve body is moved to a given position, retarding and advancing hydraulic holes become communicated to each other through an annular groove of the valve body. Due to this ON communication, retarding and advancing operation chambers become communicated, so that reciprocative swing movement of the vane rotor induced by an alternating torque produced at the starting of the engine is effectively made and thus the vane rotor can be quickly turned to the desired angular position for ease of engine starting.Type: ApplicationFiled: September 13, 2012Publication date: September 12, 2013Inventors: Atsushi WATANABE, Yasuhide TAKADA, Osamu FUJITA, Tetsuya SHIBUKAWA
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Patent number: 8396691Abstract: A controller of a cell phone serving as the position detector reads time-sequentially anteroposterior positional information Pi?1, Pi+1, together with interest positional information Pi that is an object of determination (S103), and calculates, for example, vectors V1 and V2 showing a shift from Pi?1, to Pi and a shift from Pi to Pi+1, respectively (S104, S105), in order to calculate an amplitude of fluctuation representing a direction of change. The amplitude of fluctuation representing a direction of change is expressed by a value of dot product of the calculated vectors V1 and V2 (S106). When the value of dot product is lower than a predetermined value (S107: YES), a position is shown to greatly deviate in the vicinity of the interest positional information Pi. Therefore, the amplitude of fluctuation representing a direction of change is judged to be large, and the positional information is determined to be error (S108).Type: GrantFiled: January 21, 2008Date of Patent: March 12, 2013Assignee: Osaka Kyoiku UniversityInventor: Osamu Fujita
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Publication number: 20130029436Abstract: A hard mask made of a material in which the pattern precision is degraded by oxidation, a protective film, which protects the hard mask film from oxidation, a first mask film and a first organic film are sequentially stacked. The first organic film is processed into a first pattern, and the first mask film is firstly etched using the patterned the first organic film as a mask. After the first organic film is removed, a second organic film is formed. The second organic film is processed into a second pattern. The first mask film is secondary etched using the patterned second organic film as a mask so that the surface of the first mask film is exposed but the surface of the protective film is not exposed, thereby selectively patterning only the first mask film. After that, when removing the residual second organic film by ashing, it is possible to ensure the function of the protective film that protects the hard mask film from oxidation.Type: ApplicationFiled: July 26, 2012Publication date: January 31, 2013Applicant: ELPIDA MEMORY, INC.Inventor: Osamu FUJITA
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Publication number: 20120199984Abstract: A semiconductor device comprises a material layer including a first surface and a trench with an opening in the first surface. The trench is formed in the material layer. The trench comprises a tapered portion and a vertical portion. The tapered portion is in contact with the opening and comprises a scalloping-forming trench. The vertical portion has a substantially vertical sidewall. A width of the scalloping-forming trench is larger than a width of the vertical portion.Type: ApplicationFiled: February 29, 2012Publication date: August 9, 2012Applicant: Elpida Memory, Inc.Inventors: Osamu FUJITA, Yuki TOGASHI
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Publication number: 20120070918Abstract: A method of manufacturing a semiconductor device may include, but is not limited to the following processes. First and second grooves are formed in a semiconductor substrate having a first surface. The first and second grooves have substantially the same vertical dimension. The first surface has first and second regions surrounded by the first and second grooves, respectively. An actual resistance value of the semiconductor substrate between a first point on the first region and a second point on the second region is measured. The vertical dimension of the first and second grooves is calculated with reference to the actual resistance value.Type: ApplicationFiled: September 14, 2011Publication date: March 22, 2012Applicant: ELPIDA MEMORY, INC.Inventor: Osamu Fujita