Abstract: A semiconductor device includes a semiconductor substrate having a first surface, a through silicon via (TSV) that is formed so that at least a part thereof penetrates through the semiconductor substrate, and an insulation ring. The insulation ring is formed so as to penetrate through the semiconductor substrate and so as to surround the TSV. The insulation ring includes a tapered portion and a vertical portion. The tapered portion has a sectional area which is gradually decreased from the first surface toward a thickness direction of the semiconductor substrate. The vertical portion has a constant sectional area smaller than the tapered portion.

Abstract: An important component selection device is provided for selecting a component having a higher importance in a simulation calculation, so that the component having a higher priority is calculated firstly by a calculation device and the importance of the updated component is re-evaluated so as to be reflected in the calculation thereafter. When a high speed is required, the ranking of the important components are realized by hardware. Moreover, when a storage device has a plurality of candidate value data for each of the component data and the calculation device updates the candidate values one by one, the magnitude of variety of the candidate values is used as the importance of the component data and the component having this value which is large is calculated with a higher priority so that the calculation of the component having a small change is omitted, thereby increasing the simulation speed.

Abstract: A controller of a cell phone serving as the position detector reads time-sequentially anteroposterior positional information Pi?1, Pi+1, together with interest positional information Pi that is an object of determination (S103), and calculates, for example, vectors V1 and V2 showing a shift from Pi?1, to Pi and a shift from Pi to Pi+1, respectively (S104, S105), in order to calculate an amplitude of fluctuation representing a direction of change. The amplitude of fluctuation representing a direction of change is expressed by a value of dot product of the calculated vectors V1 and V2 (S106). When the value of dot product is lower than a predetermined value (S107: YES), a position is shown to greatly deviate in the vicinity of the interest positional information Pi. Therefore, the amplitude of fluctuation representing a direction of change is judged to be large, and the positional information is determined to be error (S108).

Abstract: A semiconductor device includes an element isolation film, which exhibits less variations in the height dimension from the surface of the substrate and has a desired height dimension from the surface of the substrate. A process for manufacturing a semiconductor device includes: providing a predetermined pattern of a silicon nitride film and a protective film which covers the silicon nitride film, on a semiconductor substrate; selectively etching the semiconductor substrate using the protective film as a mask to form a trenched portion; removing the protective film to expose the silicon nitride film; depositing an element isolation film, so as to fill the trenched portion therewith and cover the silicon nitride film; removing the element isolation film formed on the silicon nitride film by polishing thereof until the silicon nitride film is exposed; and removing the silicon nitride film.

Abstract: Fabrication method of semiconductor device to reduce leak current at junction interface of p-type well and n-type well. The method includes forming a first trench portion by selective dry etching of a silicon substrate using a first etching gas and forming a second trench portion including an enlarged width portion downward from a bottom of the first trench portion by additional dry etching of a silicon substrate at the bottom of the first trench portion using a second etching gas. A mixture gas of a chlorine gas and a fluorocarbon gas is used as the second etching gas and also a bias voltage lower than that in the process to form the first trench portion are used in the process to form the second trench portion.

Abstract: A hydraulic control system for an internal combustion engine, includes a driven mechanism driven by hydraulic pressure fed through a flowing passage change-over valve. The flowing passage change-over valve includes a valve body formed with a plurality of ports which are respectively communicated with the supply passage and the oil passage, and a spool valve body slidably disposed in the valve body to open and close the plurality of ports, the ports including a supplying port communicated with the supplying passage. The maximum cross-sectional area of the supplying port is larger than a minimum cross-sectional area of the supplying passage. The flowing passage change-over valve is supplied with electric current to heat hydraulic fluid kept in the flowing passage change-over valve so as to lower a viscosity of the hydraulic fluid.

Abstract: When performing simulation of a system having a plenty of components such as a physical phenomenon and a social phenomenon, there has been a problem that an enormous calculation time is required if the number of components increases. In order to solve this problem, an important component selection device is provided for selecting a component having a higher importance in the simulation calculation, so that the component having a higher priority is calculated firstly by a calculation device and the importance of the updated component is re-evaluated so as to be reflected in the calculation thereafter. When a high speed is required, the ranking of the important components are realized by hardware.

Abstract: A hydraulic control system for an internal combustion engine, includes a driven mechanism driven by hydraulic pressure fed through a flowing passage change-over valve. The flowing passage change-over valve includes a valve body formed with a plurality of ports which are respectively communicated with the supply passage and the oil passage, and a spool valve body slidably disposed in the valve body to open and close the plurality of ports, the ports including a supplying port communicated with the supplying passage. The maximum cross-sectional area of the supplying port is larger than a minimum cross-sectional area of the supplying passage. The flowing passage change-over valve is supplied with electric current to heat hydraulic fluid kept in the flowing passage change-over valve so as to lower a viscosity of the hydraulic fluid.

Abstract: A semiconductor device includes an element isolation film, which exhibits less variations in the height dimension from the surface of the substrate and has a desired height dimension from the surface of the substrate. A process for manufacturing a semiconductor device includes: providing a predetermined pattern of a silicon nitride film and a protective film which covers the silicon nitride film, on a semiconductor substrate; selectively etching the semiconductor substrate using the protective film as a mask to form a trenched portion; removing the protective film to expose the silicon nitride film; depositing an element isolation film, so as to fill the trenched portion therewith and cover the silicon nitride film; removing the element isolation film formed on the silicon nitride film by polishing thereof until the silicon nitride film is exposed; and removing the silicon nitride film.

Abstract: Fabrication method of semiconductor device to reduce leak current at junction interface of p-type well and n-type well. The method comprises forming a first trench portion 109 by selective dry etching of a silicon substrate 101 using a first etching gas and forming a second trench portion 113 including an enlarged width portion downward from the bottom of the first trench portion 109 by additional dry etching of a silicon substrate 101 at the bottom of the first trench portion 109 using a second etching gas. A mixture gas of a chlorine gas and a fluorocarbon gas is used as the second etching gas and also a bias voltage lower than that in the process to form the first trench portion 109 are used in the process to form the second trench portion 113.

Abstract: In a vane type valve timing control apparatus, when an amplitude of a rotation phase of a cam shaft with respect to a crank shaft is above a predetermined value, a target value for the rotation phase is forcibly changed to a maximum advance angle and a maximum delay angle, so that oil of an advance angle side hydraulic chamber and a delay angle side hydraulic chamber is discharged together with air.

Abstract: A photosensitive lithographic printing plate has an aluminum support anodized and treated with an aqueous solution of polyvinylphosphonic acid adjusted to pH 1.5 or below to ensure no deterioration of impression capacity and prevention of the water-ink balance scum in the lithographic printing plate made therefrom even when a cleaner is used in the course of printing.

Abstract: A feed-screw unit includes a rotor formed with a female screw, and a reciprocating shaft disposed inside the rotor to be moved forward and backward in the axial direction of the rotor in accordance with rotation thereof. The reciprocating shaft includes a male screw with a first portion to be in engagement with the female screw of the rotor and a second portion to be in non-engagement therewith.

Abstract: A contrasting composition for gastrointestinal tract MRI which contains a trace amount of unchelated manganese is disclosed. The composition has a marked contrasting effect in MRI without causing harm to a living body.

Abstract: An air bag activation device for a vehicle air bag system eliminates the need to feed a small test current during the standby state so that the power consumption is minimized, and detects faults of the air bag activating device accurately even if the battery voltage fluctuates, and prevents the air bag from expanding erroneously. The device bases the fault detection on the calculation of the difference between an amplified voltage when a small constant current is fed to the air bag activating device from a constant current circuit, and an amplified voltage in the absence of the current.

Abstract: In a brush motor comprising a stator assembly constituted by a permanent magnet assembly and a cylindrical yoke, a stator provided with coils diametrically opposing to each other and rotatably disposed within the stator assembly, and a brush, the permanent magnet assembly is constituted by two arc segment magnets each having magnetic anisotropy in a radial direction and an arc angle .theta. of 170.degree.-180.degree., so that the permanent magnet assembly has a magnetic flux density distribution having a smooth wave form substantially free from localized deformations in a circumferential direction approximately on an inner surface thereof. Such an arc segment magnet is manufactured by a wet molding method and sintering.

Abstract: The present invention purports to provide a novel B-class complementary circuit of direct-coupling type having good characteristics of low dispersions of voltage gain and low temperature dependency. The apparatus of the present invention can perform the above-mentioned excellent characteristics by utilizing several current-mirror circuits in a direct coupled circuit which comprisesan output stage driving circuit,a B-class complementary connected output stage, anda bias-stabilization circuit, formed as a differential amplifier working as a pre-drive stage for driving the output stage driving circuit; andby utilizing further current-mirror circuits for constant current feeding to a load circuit of the driving circuit and for the bias stabilizing circuit.

Abstract: A magnetic circuit for a loudspeaker characterized in a substantially rectangular parellelepiped yoke provided with a hollow penetrating two opposed lateral faces thereof has a substantially rectangular parallelepiped sintered magnet mounted therein of a specified size and composition and having a recoil permeance coefficient from 1.0 to 1.2, a polepiece connected to the top surface of said parallelepiped sintered magnet forms a magnetic air gap with the end of a through hole formed in the top face of said rectangular yoke for a movable coil.

Abstract: A protective circuit for a class B OTL circuit such as a vertical deflection circuit and a sound output circuit of a television set. The protective circuit comprises a first voltage comparator circuit having one input terminal applied with a detection signal in the form of an average voltage of an output signal of the OTL circuit and the other input terminal applied with a first reference voltage, and a second voltage comparator circuit having one input terminal applied with the detection signal and the other input terminal applied with a second reference voltage which is different from the first reference voltage. Either one of the voltage comparator circuits is operated when the output terminal of the OTL circuit is short-circuited to either the power supply voltage line or earth.

Abstract: A vertical deflection circuit having a vertical amplifier stage bias voltage stabilizing circuit including a differential amplifier circuit which operates only during the retrace period. One input of the differential amplifier circuit receives a D.C. bias voltage and the other input receives the mean voltage of an output signal. The output of the differential amplifier circuit is fed back to a drive stage to stabilize the bias voltage.