Abstract: A surface acoustic wave device includes a substrate at least a surface of which has a piezoelectric function, and an electrode formed on the substrate, wherein the electrode is composed of a first film of Al containing Cu at or over a solid solubility limit of Cu to Al and one or more unit(s) of a second film of Al containing Mg at or over a Solid solubility limit of Mg to Al and a third film of Al containing Cu at or over the solid solubility limit of Cu to Al formed on the first film in this order, and the first film and the third film contain Mg diffused from the second film.

Abstract: An antenna duplexer including two duplexer elements each including two surface acoustic wave filters having different center pass band frequencies and connecting terminals for connecting the duplexer elements and external circuits, which are grouped into an antenna terminal group for connection to an external antenna, a receiving terminal group for connection to an external circuit and a transmitting terminal group for connection to an external circuit, wherein regions for disposing the antenna terminal group, the receiving terminal group and the transmitting terminal group are separated planarly.

Abstract: A surface acoustic wave filter includes a piezoelectric substrate having formed thereon plural surface acoustic wave resonators electrically connected in a ladder form for exciting a surface acoustic wave, wherein each of the surface acoustic wave resonators is composed of an interdigital transducer and reflectors arranged closely on both sides of the transducer in a direction parallel to a propagation direction of the excited surface acoustic wave; the interdigital transducer of at least one of the surface acoustic wave resonators is composed of a prescribed number of pairs of comb form electrodes; and the surface acoustic wave excited by the pairs of comb form electrodes contains two kinds of surface acoustic waves having phases that are different from each other by 180°.

Abstract: A surface acoustic wave resonator includes a piezoelectric substrate having formed thereon a interdigital transducer part comprising plural electrode fingers having a period pi that is substantially equal to a wavelength of a surface acoustic wave to be excited, and at least one reflector arranged in the vicinity of the interdigital transducer part to reflect the surface acoustic wave excited by the interdigital transducer part in a direction parallel to a propagation direction of the surface acoustic wave. The interdigital transducer part has three or more electrode fingers within the period pi, and the reflector has plural gratings having a period pr that is equal to a half of a wavelength of a surface acoustic wave propagating in the reflector.

Abstract: A surface acoustic wave reflector includes a piezoelectric substrate and a plurality of perturbation members arranged at a first period on the piezoelectric substrate. A plurality of free-surface regions where no perturbation members exist are formed in an arrangement of the perturbation members.

Abstract: An acceleration sensor includes a piezoelectric single-plate having a weight part and a detection part. The piezoelectric single-plate is, for example, an X-cut plate of LiNbO3.

Abstract: A duplexer device of this invention includes two surface acoustic wave filters having different band center frequencies and a phase matching circuit for matching phases of the two surface acoustic wave filters. The phase matching circuit is composed of one or more line patterns, and at least one of the line patterns is formed as divided among a plurality of internal layers of a multi-layer package, and at least the line patterns formed on the internal layers adjacent to each other have pattern shapes different from each other. According to the invention, a duplexer device having a small size and stable filter characteristics can be provided.

Abstract: A surface acoustic wave filter includes a piezoelectric substrate, an exciting electrode formed on the piezoelectric substrate and exciting a surface acoustic wave, and a receiving electrode receiving the surface acoustic wave. Both the exciting and receiving electrodes are provided with interdigital electrode fingers having a period p. Either one of the exciting and receiving electrodes is constructed of a plurality of interdigital electrode sub-units having substantially the same electrode surface areas occupied by interdigital electrode fingers. The interdigital electrode sub-units are disposed in a direction perpendicular to a propagation direction of the excited surface acoustic wave and have a positional relation such that the interdigital electrode sub-units are offset to each other by (n±¼)p, wherein n is an integer, in a direction parallel to the propagation direction of the surface acoustic wave.

Abstract: A surface acoustic wave device includes a piezoelectric substrate of a single crystal LiTaO3 and an electrode pattern provided on the piezoelectric substrate. The electrode pattern contains Al as a primary component and has a thickness in a range of 0.03-0.15 times a wavelength of a surface acoustic wave excited on the piezoelectric substrate. The piezoelectric substrate has an orientation rotated about an X-axis thereof from a Y-axis thereof toward a Z-axis thereof, with a rotational angle of 38-46°.

Abstract: In A surface acoustic wave filter constituted with a ladder of resonators having a resonance frequency or an anti-resonance frequency, an input current flowing into a resonator in a parallel arm at the first stage from the input is so large as to deteriorate its lifetime caused from a heat generation by the resistance of the thin film wiring. As a measure to this problem, bonding wires (30, 31) connected onto points on connection electrodes (130, 131) for connecting an end of each of plural comb teeth electrodes 111 forming the resonators Rs1 & Rp1, or on a lead conductor (103-1) extended longitudinally from the connection electrode, are allotted at both sides of a center line (C1) of the plural comb teeth electrode group. Furthermore, a bonding wire may be connected substantially onto the center line C1 as well. It is preferable for the bonding wires to be located substantially symmetric with respect to the center line C1.

Abstract: A method of producing a SAW (Surface Acoustic Wave) device, including the steps of implanting ions in an entire surface of a piezoelectric member of the SAW device, so that an ion implantation layer is formed therein; performing a heat treatment of the piezoelectric member, so that a heat-treated ion implantation layer is formed in the entire surface of the piezoelectric member; and providing an electrode of a comb type resonator on the heat-treated ion implantation layer.

Abstract: The multimode surface acoustic wave filter includes two surface acoustic wave resonators closely arranged on a piezoelectric substrate in a direction perpendicular to the propagation direction of surface acoustic waves and acoustically coupled by a coupling section, each of the surface acoustic wave resonators including an interdigital transducer and two reflectors disposed closely on both sides of the interdigital transducer in a direction parallel to the propagation direction of the surface acoustic waves, the interdigital transducer having an excitation section for exciting the surface acoustic waves and a signal terminal section for inputting an electric signal, each of the reflectors having a grating section and a terminal section, wherein the velocity of surface acoustic waves propagating through the coupling section is a little larger than the velocity of the surface acoustic waves propagating through the excitation section of the interdigital transducer.

Abstract: A surface acoustic wave filter includes a piezoelectric substrate, input and output IDTs, and first and second direction changing electrodes, wherein at least one of the input and output IDTs includes a weighted interdigital transducer, the input and output IDTS being arranged in a direction perpendicular to a propagation direction of a surface acoustic wave (SAW) oscillated by the input IDT. The first direction changing electrode changes the propagation direction of the SAW, which has propagated in a left directed from the input IDT, into a direction towards the output IDT. The second direction changing electrode changes the propagation direction of the SAW, which has propagated in a right direction from the input IDT, into a direction towards the output IDTs and the first and second direction changing electrodes is set for obtaining at the output IDT the SAW having desired frequency characteristics.

Abstract: A filter device includes at least two filter elements provided in a package, each of the filter elements passing only signals within a predetermined frequency band, the predetermined frequency bands of the filter elements having center frequencies which are distinct from each other. An input terminal is connected to and shared by respective inputs of the filter elements. An output terminal is connected to and shared by respective outputs of the filter elements.

Abstract: A surface acoustic wave device includes a piezoelectric substrate and plural IDTs for sending and receiving SAW mounted on the substrate. At least one of the IDTs includes a positive electrode including plural positive split electrodes (PSEs) and a negative electrode including plural negative split electrodes (NSEs). The PSEs and NSEs are arranged alternately. Each of the PSEs andNSEs has apair of electrode fingers. Two electrode fingers of each of the split electrodes are different in width in a direction in which a SAW is excited. An angle .alpha. determined by a direction transverse to the electrode fingers from one of the two electrode fingers having a smaller reflection factor toward the other one having a larger reflection factor and a direction in which the SAW excited by the IDT including the split electrodes travels to one of the IDTs for receiving the SAW is equal to or larger than 0.degree. and smaller than 90.degree., i.e., 0.ltoreq..alpha.<90.

Abstract: A surface acoustic wave device includes a piezoelectric substrate of a single crystal LiTaO.sub.3 and an electrode pattern provided on the piezoelectric substrate. The electrode pattern contains Al as a primary component and has a thickness in a range of 0.03-0.15 times a wavelength of a surface acoustic wave excited on the piezoelectric substrate. The piezoelectric substrate has an orientation rotated about an X-axis thereof from a Y-axis thereof toward a Z-axis thereof, with a rotational angle of 39-46.degree..

Abstract: A surface acoustic wave device includes a plurality of surface acoustic wave filter chips having external connection terminals and a package accommodating the plural surface acoustic wave filter chips. The package is provided with a plurality of terminals for connection with the surface acoustic wave filter chips, and one of the external connection terminals of a first one of the surface acoustic wave filter chips is connected with one of the terminals of the package via a second one of the surface acoustic wave filter chips.

Abstract: A surface acoustic wave filter of multi-stage connection type including a plurality of surface acoustic wave filters formed on a piezoelectric substrate and a connection section for electrically connecting the surface acoustic wave filters in a cascade connection. Each of the surface acoustic wave filters includes interdigital transducers with two signal terminals for electric input and output, each interdigital transducer including an excitation section for exciting a surface acoustic wave and two terminal sections disposed on opposite sides of the excitation section, the two terminal sections serving as input or output terminal for electric signal and ground terminal. One of the signal terminal sections is connected to the connection section, and an electrode area of said one of the signal terminal sections is adjusted so that a parasitic capacitance formed between said one of the signal terminal sections and a grounding point of the surface acoustic wave filter is less than or equal to 0.01 pF.

Abstract: In a surface acoustic wave filter constituted with a ladder of resonators having a resonance frequency or an anti-resonance frequency, an input current flowing into a resonator in a parallel arm at the first stage from the input is so large as to deteriorate its lifetime caused from a heat generation by the resistance of the thin film wiring. As a measure to this problem, bonding wires (30, 31) connected onto points on connection electrodes (130, 131) for connecting an end of each of plural comb teeth electrodes 111 forming the resonators R.sub.s1 & R.sub.p1, or on a lead conductor (130-1) extended longitudinally from the connection electrode, are allotted at both sides of a center line (C1) of the plural comb teeth electrode group. Furthermore, a bonding wire may be connected substantially onto the center line C1 as well. It is preferable for the bonding wires to be located substantially symmetric with respect to the center line C1.

Abstract: A SAW filter includes a first SAW resonator having a pair of terminals and a predetermined resonance frequency (frp), the first SAW resonator being provided in a parallel arm of the SAW filter. A second SAW resonator has a pair of terminals and a predetermined resonance frequency (frs) approximately equal to a predetermined antiresonance frequency of the first SAW resonator (fap). The second SAW resonator is provided in a series arm of the SAW filter. An inductance element is connected in series to the first SAW resonator.