Abstract: According to one embodiment, a pattern forming method includes transferring a first pattern area of a plurality of pattern areas to a to-be-processed substrate, by using a template on which the plurality of pattern areas, where patterns are formed on a substrate, are disposed, counting up a number of times of transfer of the first pattern area, and storing the number of times of transfer, determining whether the stored number of times of transfer of the pattern of the first pattern area has exceeded a specified number, and executing switching to a second pattern of the plurality of pattern areas when it is determined, at a time of the determining, that the stored number of times of transfer of the pattern of the first pattern area has exceeded the specified number, and transferring the second pattern area to the to-be-processed substrate.

Abstract: A mask pattern verifying method include obtaining first information about a hot spot from design data of a mask pattern, obtaining second information about the mask pattern actually formed on a photo mask, and determining a measuring spot of the mask pattern actually formed on the photo mask, based on the first and second information.

Abstract: A mask forming method includes preparing design data of mask including pattern regions having identical repetition patterns respectively, generating mask pattern data of mask based on the design data, generating inspection control information for controlling inspection of defect on mask based on the mask pattern data, the information including positional information of the pattern regions and inspection sensitivity information of the repetition pattern, providing the inspection control information to mask pattern data, forming mask pattern of mask based on the mask pattern data, and inspecting the mask pattern based on the mask pattern data comprising inspecting portion in the mask pattern different from the pattern regions by Die-to-Database comparison method, the inspecting the portion including selecting portion corresponding to repetition pattern from the mask pattern based on the positional information, and inspecting the selected portion by Die-to-Die comparison method at an inspection sensitivity corre

Abstract: A method of evaluating a photo mask, includes measuring each dimension of a plurality of pattern portions of a mask pattern formed on a photo mask, obtaining an inter-pattern distance between the pattern portion and a pattern different from the pattern portion with respect to each of the pattern portions, obtaining a dimensional difference between the measured dimension of the pattern portion and a target dimension of the pattern portion with respect to each of the pattern portions, grouping the dimensional difference obtained for each pattern portion into a plurality of groups in accordance with the inter-pattern distance obtained for each pattern portion, obtaining an evaluation value based on the dimensional difference in each group with respect to each of the groups, and evaluating the photo mask based on the evaluation value.

Abstract: According to a mask defect inspection data generating method, a distance between inspection areas neighboring in a predetermined direction is calculated based on inspection area control information defined in photomask inspection data. It is determined whether or not the calculated distance between inspection areas is less than a predetermined distance. When it is determined that the distance between inspection areas is less than a predetermined distance, the inspection area is combined to produce an optimization inspection area. The produced optimization inspection area information is defined in inspection layout data for making a reference in die-to-database defect inspection.

Abstract: A method of creating photo mask data includes preparing design data of a photo mask, generating drawing data of the photo mask by using the design data, generating inspection control information configured to control inspection of defect on the photo mask by using the drawing data, and generating drawing and inspection data including the drawing data and the inspection control information by providing the drawing data with the inspection control information.

Abstract: A method of evaluating a photo mask, includes measuring each dimension of a plurality of pattern portions of a mask pattern formed on a photo mask, obtaining an inter-pattern distance between the pattern portion and a pattern different from the pattern portion with respect to each of the pattern portions, obtaining a dimensional difference between the measured dimension of the pattern portion and a target dimension of the pattern portion with respect to each of the pattern portions, grouping the dimensional difference obtained for each pattern portion into a plurality of groups in accordance with the inter-pattern distance obtained for each pattern portion, obtaining an evaluation value based on the dimensional difference in each group with respect to each of the groups, and evaluating the photo mask based on the evaluation value.

Abstract: Design data of a wafer pattern to be formed on a semiconductor wafer is converted into mask data corresponding to a mask pattern to be formed on a photomask for use in the formation of the wafer pattern, and the mask pattern is formed on the photomask on the basis of the mask data. A code pattern obtained by coding information of the data conversion process of converting the design data into the mask data is formed on the photomask.

Abstract: According to a mask defect inspection data generating method, a distance between inspection areas neighboring in a predetermined direction is calculated based on inspection area control information defined in photomask inspection data. It is determined whether or not the calculated distance between inspection areas is less than a predetermined distance. When it is determined that the distance between inspection areas is less than a predetermined distance, the inspection area is combined to produce an optimization inspection area. The produced optimization inspection area information is defined in inspection layout data for making a reference in die-to-database defect inspection.

Abstract: A mask pattern verifying method include obtaining first information about a hot spot from design data of a mask pattern, obtaining second information about the mask pattern actually formed on a photo mask, and determining a measuring spot of the mask pattern actually formed on the photo mask, based on the first and second information.

Abstract: According to an aspect of the invention, there is provided a photomask formation method including forming, on a photomask, a pattern obtained by coding information including inspection information for inspecting the photomask and an information attribute which identifies a type of the inspection information; reading the inspection information from the pattern; and inspecting the photomask on the basis of the read inspection information.

Abstract: A method for evaluating a photo mask comprises preparing a photo mask including a unit drawing pattern, finding a dimensional variation relating to the photo mask, the dimensional variation including first and second dimensional variations, the first dimensional variation occurring due to a positional displacement and size mismatch of the unit drawing pattern in the photo mask and the second dimensional variation occurring due to etching and development relating to a manufacturing of the photo mask, estimating a deteriorated amount of an exposure latitude occurring due to the dimensional variation of the photo mask using the dimensional variation and a degree of influence of the dimensional variation for the exposure latitude, and judging quality of the photo mask by comparing the deteriorated amount of the exposure latitude and an allowable deteriorated amount of the exposure latitude.

Abstract: A photo mask includes a mask pattern formed by using a mask exposure pattern to exposure a mask substrate, the mask exposure pattern being formed by adding a proximity effect correction pattern to a design pattern that is a pattern image of design data, the design pattern having a first portion extending in a first direction and a second portion extending in a second direction that is oblique to the first direction, the correction pattern having a first correction portion added to the first portion and a second correction portion added to the second portion, and an edge portion of the second correction portion being shaped to incline to extend in the first direction or a direction orthogonal to the first direction.

Abstract: A method of creating photo mask data includes preparing design data of a photo mask, generating drawing data of the photo mask by using the design data, generating inspection control information configured to control inspection of defect on the photo mask by using the drawing data, and generating drawing and inspection data including the drawing data and the inspection control information by providing the drawing data with the inspection control information.

Abstract: A mask forming method includes preparing design data of mask including pattern regions having identical repetition patterns respectively, generating mask pattern data of mask based on the design data, generating inspection control information for controlling inspection of defect on mask based on the mask pattern data, the information including positional information of the pattern regions and inspection sensitivity information of the repetition pattern, providing the inspection control information to mask pattern data, forming mask pattern of mask based on the mask pattern data, and inspecting the mask pattern based on the mask pattern data comprising inspecting portion in the mask pattern different from the pattern regions by Die-to-Database comparison method, the inspecting the portion including selecting portion corresponding to repetition pattern from the mask pattern based on the positional information, and inspecting the selected portion by Die-to-Die comparison method at an inspection sensitivity corre

Abstract: There is disclosed a method of producing mask inspection data, including preparing design data of a semiconductor device preparing a lithography condition relevant to a lithography process for transferring a mask pattern formed on a photo mask onto a wafer, preparing a wafer processing condition relevant to wafer processing using a pattern transferred onto the wafer, preparing a first proximity correction model for correcting proximity effect relevant to the lithography condition and the wafer processing condition, generating mask pattern data based on the design data and the first proximity correction model, and generating mask inspection data corresponding to the mask pattern data.

Abstract: A pattern extracting system includes a sampler configured to sample test candidate patterns from a circuit pattern, based on a lithographic process tolerance, a space classification module configured to classify the test candidate patterns into space distance groups depending on a space distance to an adjacent pattern, a density classification module configured to classify the test candidate patterns into pattern density groups depending on a surrounding pattern density, and an assessment module configured to assess actual measurements of dimensional errors of the test candidate patterns classified into the space distance groups and the pattern density groups.

Abstract: Disclosed is a method of manufacturing a photo mask comprising preparing mask data for a mask pattern to be formed on a mask substrate, calculating edge moving sensitivity with respect to each of patterns included in the mask pattern using the mask data, the edge moving sensitivity corresponding to a difference between a proper exposure dose and an exposure dose to be set when a pattern edge varies, determining a monitor portion of the mask pattern, based on the calculated edge moving sensitivity, actually forming the mask pattern on the mask substrate, acquiring a dimension of a pattern included in that portion of the mask pattern formed on the mask substrate which corresponds to the monitor portion, determining evaluation value for the mask pattern formed on the mask substrate, based on the acquired dimension, and determining whether the evaluation value satisfies predetermined conditions.

Abstract: A method of manufacturing a photomask includes determining dimensions of a pattern in a photomask, determining an exposure latitude on the basis of the dimensions of the mask, and judging if the photomask is defective or non-defective on the basis of whether or not the exposure latitude falls within a prescribed exposure latitude. The pattern in the photomask includes dimensions of critical pattern portions in which an exposure latitude is low.

Abstract: A photo mask includes a mask pattern formed by using a mask exposure pattern to exposure a mask substrate, the mask exposure pattern being formed by adding a proximity effect correction pattern to a design pattern that is a pattern image of design data, the design pattern having a first portion extending in a first direction and a second portion extending in a second direction that is oblique to the first direction, the correction pattern having a first correction portion added to the first portion and a second correction portion added to the second portion, and an edge portion of the second correction portion being shaped to incline to extend in the first direction or a direction orthogonal to the first direction.