Abstract: Disclosed is a method of manufacturing a photo mask comprising preparing mask data for a mask pattern to be formed on a mask substrate, calculating edge moving sensitivity with respect to each of patterns included in the mask pattern using the mask data, the edge moving sensitivity corresponding to a difference between a proper exposure dose and an exposure dose to be set when a pattern edge varies, determining a monitor portion of the mask pattern, based on the calculated edge moving sensitivity, actually forming the mask pattern on the mask substrate, acquiring a dimension of a pattern included in that portion of the mask pattern formed on the mask substrate which corresponds to the monitor portion, determining evaluation value for the mask pattern formed on the mask substrate, based on the acquired dimension, and determining whether the evaluation value satisfies predetermined conditions.

Abstract: A method for evaluating a photo mask comprises preparing a photo mask including a unit drawing pattern, finding a dimensional variation relating to the photo mask, the dimensional variation including first and second dimensional variations, the first dimensional variation occurring due to a positional displacement and size mismatch of the unit drawing pattern in the photo mask and the second dimensional variation occurring due to etching and development relating to a manufacturing of the photo mask, estimating a deteriorated amount of an exposure latitude occurring due to the dimensional variation of the photo mask using the dimensional variation and a degree of influence of the dimensional variation for the exposure latitude, and judging quality of the photo mask by comparing the deteriorated amount of the exposure latitude and an allowable deteriorated amount of the exposure latitude.

Abstract: A method of manufacturing a photomask includes determining an average value of dimensions of a pattern in a photomask. determining an in-plane uniformity of the dimensions, determining an exposure latitude on the basis of the average value and the in-plane uniformity. The exposure latitude depends on dimensional accuracy of the pattern.

Abstract: A method of manufacturing a photomask includes determining dimensions of a pattern in a photomask, determining an exposure latitude on the basis of the dimensions of the mask, and judging if the photomask is defective or non-defective on the basis of whether or not the exposure latitude falls within a prescribed exposure latitude. The pattern in the photomask includes dimensions of critical pattern portions in which an exposure latitude is low.

Abstract: A mask trading system for trading a photo mask includes a purchase mediating section configured to exchange information with a mask buyer through a network. The system further includes a line information storing section and a calculating section. The line information storing section is configured to store line information, which includes information concerning processing lines for performing a plurality of processing modes. When the mask is manufactured by the processing modes in a mask factory, although substantially the same result is obtained in function of the mask, good/no-good evaluations in delivery date and price of the mask are reverse to each other in a case. The calculating section is configured to calculate an estimated delivery date and an estimated price of an ordered mask, in each of the cases of using the plurality of processing modes.

Abstract: A method of manufacturing a photomask comprises determining an average value and an in-plane uniformity in a dimension of a pattern of the photomask, determining an exposure latitude as the photomask is employed on the basis of the average value and the in-plane uniformity in the dimension of the pattern, and judging if the photomask is defective or non-defective on the basis of whether or not the exposure latitude is determined satisfy a prescribed exposure latitude.

Abstract: Resist film patterns are formed on a light shielding film formed on a surface of the glass substrate. The resist film patterns cover regions A and B of the surface of the substrate. Then, using the resist film patterns as a mask, the light shielding film is patterned to form the light shielding film pattern in the regions A and B. The light shielding film pattern formed in region B is used as a dummy pattern. Then, a further resist film is formed over the light shielding film patterns of the regions A and B. The resist film is patterned to provide only a resist film pattern covering the region A. Thereafter, an etching processing is applied for removing the light shielding film pattern in the region B using the resist film pattern as a mask. In this method, the presence of the dummy pattern is an important feature.

Abstract: Resist film patterns are formed on a light shielding film formed on a surface of the glass substrate. The resist film patterns cover regions A and B of the surface of the substrate. Then, using the resist film patterns as a mask, the light shielding film is patterned to form the light shielding film pattern in the regions A and B. The light shielding film pattern formed in region B is used as a dummy pattern. Then, a further resist film is formed over the light shielding film patterns of the regions A and B. The resist film is patterned to provide only a resist film pattern covering the region A. Thereafter, an etching processing is applied for removing the light shielding film pattern in the region B using the resist film pattern as a mask. In this method, the presence of the dummy pattern is an important feature.

Abstract: It is determined whether a pattern of subfield region having a pattern extending from region which is determined by main deflection width P is included in the frame region of maximum deflection width R (=P+Q), and pattern data of the subfield having a pattern extending into an adjacent frame is processed as data which is included in the range of maximum deflection width R.

Abstract: There is disclosed a specific method, which is applied to a charged particle beam pattern drawing system, for drawing a circuit pattern on a workpiece using a charged particle beam. A circuit pattern to be drawn is first divided into unit figures by parallel line segments extending from the vertexes of the figure that has a polygonal planar shape in a first reference direction. Each of the unit figures corresponds to a specific reference figure registered in advance. When the divided unit figures include an elongated too-small figure having at least one side shorter than a predetermined minimum allowable length, the too-small figure is merged with at least one unit figure adjacent to it at least once, and thus an expanded unit figure is defined. The expanded unit figure is divided into new unit figures by parallel line segments extending from its vertexes in a second reference direction perpendicular to the first reference direction so as to correspond to the reference figures.

Abstract: In a mark position-detecting apparatus, a rectangular reference mark is performed on a workpiece or photomask. The apparatus includes a movable table for supporting the photomask, a stationary light source for radiating light for forming a light spot on the photomask, a photodetector for detecting a change in light component transmitted through the mask, and a computer control section. The table moves forwardly and reversely in a Y-direction so that the photodetector scans two opposite edges of the reference mark in opposite directions in the Y-direction. The table is then moved forwardly and reversely in a X-direction so that the photodetector scans other two opposite mark edges. The signal detector thus produces edge position data representing the four mark edge scanned. The computer control section computes the coordinates of the mark center based on the edge position data.

Abstract: A mask inspection apparatus is arranged to compare a measured data signal obtained by optically measuring a photomask with a design data signal representing an integrated circuit pattern so as to inspect defects of the photomask on which the integrated circuit pattern is drawn. To inspect the pattern area and its peripheral area of the mask in one step, a reference signal generator in the mask inspection apparatus is arranged to generate a reference signal containing a predetermined additional data signal representing the peripheral area of the integrated circuit pattern, in addition to the design data signal representing the integrated circuit pattern. The reference signal is compared with the measured data signal of the pattern area and its peripheral area.