Abstract: A semiconductor chip on which a light receiving element is mounted, a preamplifier for amplifying an output signal from the light receiving element, and an insulating carrier substrate on which the light receiving element is mounted are connected such that the output signal from the light receiving element is input to the preamplifier through electrodes on the carrier substrate, and there are provided two electrodes, on the carrier substrate, having a capacitance value of 40 fF or more therebetween in a state where no light receiving element is mounted.

Abstract: When it is assumed that there is a first imaginary straight line connecting between the center of gravity of the first antenna wire and the center of gravity of the second antenna wire, the first imaginary straight line is called a transverse line, and when it is assumed that there is a second imaginary line obtained by endlessly extending the transverse line, the second imaginary line is called an endless transverse line; when the center between closest portions of the first antenna wire and the second antenna wire is called an antenna center; independent conductor A is disposed on a side closer to the first antenna wire with respect to the antenna center; independent conductor B is disposed on a side closer to the second antenna wire with respect to the antenna center; and independent conductor A and independent conductor B are disposed on or in a dielectric substrate so that the endless transverse line passes through independent conductor A and independent conductor B or extends over or under independent c

Abstract: The present invention provides an optical transmission module configured such that a driver IC chip to drive a semiconductor laser device, a first insulation plate having the semiconductor laser device mounted thereon and a coupling optical component are mounted in this order, a thin film inductor element and thin film resistor element which are connected in parallel are formed on a second insulation plate and a bias current is supplied to the semiconductor laser device via this LR element.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: The present invention provides an optical modulator module comprising: a chip carrier; a semiconductor optical modulator for modulating light based on an electronic signal; a strip conductor electrically connected to the semiconductor optical modulator; a first resistor electrically connected to the semiconductor optical modulator; and a second resistor electrically connected in series to the first resistor; wherein the semiconductor optical modulator, the strip conductor, and the first and second resistors are disposed on the chip carrier; and wherein the frequency characteristics of the optical modulator module is adjusted by selecting to short or not to short both ends of the first resistor by use of a wire as necessary.

Abstract: Even for a driving impedance of 25 ?, high transmission waveform quality of an optical transmission module is maintained using an optical modulator element designed for a driving impedance of 50 ?. The above can be achieved by adopting an optical module 100 that includes an input electrode for electrical signals, an optical modulator element for modulating laser light using the electrical signals, a termination resistance element, a first bonding wire for connecting the input electrode and the optical modulator element, a second bonding wire for connecting the optical modulator element and the termination resistance element, and a third bonding wire for connecting the input electrode and the termination resistance element.

Abstract: The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation.

Abstract: A high frequency substrate, on which a high frequency substrate transmission line for connecting a chip carrier transmission line and a package substrate transmission line is formed, is mounted while being inclined with respect to a package, so that each distance between the transmission lines can be reduced. Thereby, the lengths of wires for connecting the transmission lines can be reduced so as to improve frequency characteristics of an optical modulator module.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: In a directly modulated optical module, the input current to drive the semiconductor laser is controlled so as to make a rate of change in fall time smaller than a rate of change in rise time (inclination) in order to improve the eye opening of an eye pattern and extend the transmission distance. In addition, the input current is overshot at least during the period of transient state following the rising edge.

Abstract: An optical module having: a first transmission line and a second transmission line, both connected in series to transmit electrical signals; a laser diode element; an optical modulator element; a termination resistance element for impedance matching; a first bonding wire connecting one end of the first transmission line and the optical modulator element; and a second bonding wire connecting the optical modulator element and the termination resistance element. The resistance value of the termination resistance element is set to stay in a range from 40 to 60 ?, the characteristic impedance of the second transmission line is set to 50 ?, and the characteristic impedance of the first transmission line is set to stay in a range from 20 to 30 ?.

Abstract: The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation.

Abstract: Even for a driving impedance of 25 ?, high transmission waveform quality of an optical transmission module is maintained using an optical modulator element designed for a driving impedance of 50 ?. The above can be achieved by adopting an optical module 100 that includes an input electrode for electrical signals, an optical modulator element for modulating laser light using the electrical signals, a termination resistance element, a first bonding wire for connecting the input electrode and the optical modulator element, a second bonding wire for connecting the optical modulator element and the termination resistance element, and a third bonding wire for connecting the input electrode and the termination resistance element.

Abstract: An optical module having: a first transmission line and a second transmission line, both connected in series to transmit electrical signals; a laser diode element; an optical modulator element; a termination resistance element for impedance matching; a first bonding wire connecting one end of the first transmission line and the optical modulator element; and a second bonding wire connecting the optical modulator element and the termination resistance element. The resistance value of the termination resistance element is set to stay in a range from 40 to 60 ?, the characteristic impedance of the second transmission line is set to 50 ?, and the characteristic impedance of the first transmission line is set to stay in a range from 20 to 30 ?.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: The present invention provides an optical modulator module comprising: a chip carrier; a semiconductor optical modulator for modulating light based on an electronic signal; a strip conductor electrically connected to the semiconductor optical modulator; a first resistor electrically connected to the semiconductor optical modulator; and a second resistor electrically connected in series to the first resistor; wherein the semiconductor optical modulator, the strip conductor, and the first and second resistors are disposed on the chip carrier; and wherein the frequency characteristics of the optical modulator module is adjusted by selecting to short or not to short both ends of the first resistor by use of a wire as necessary.

Abstract: The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation.

Abstract: There are disposed first coupling conductors, which comprise a pair of coupling branch lines 1 and 2 connected to the first antenna conductor 3 and extend inward from the first antenna conductor. The coupling branch lines 1 and 2 have open ends 1a and 2a disposed so as to be adjacent to each other and be capacitively coupled to each other. The open ends 1a and 2a of the coupling branch lines 1 and 2 are located at closest or substantially closest portions to each other. The second antenna conductor 13 includes second coupling conductors, which comprise a pair of coupling branch lines 11 and 12 connected the second antenna conductor 13 and extending inward from the second antenna conductor. The coupling branch lines 11 and 12 have open ends disposed so as to be adjacent to each other and be capacitively coupled to each other. The open ends of the coupling branch lines 11 and 12 are located at closest or substantially closest portions to each other.