Abstract: Pests can be controlled by applying an effective amount of a compound of formula (1): wherein R is C2–C6 alkyl, C3–C6 cycloalkyl, (C3–C6 cycloalkyl)C1–C2 alkyl, 3,3,3-trifluoropropyl or 3,3,3-trifluoro-2-methylpropyl to pests or habitats of pests.

Abstract: To provide a non-aqueous ink composition which is small in generation of strike through or smear marks and free from the problem of clogging of the nozzle. A non-aqueous ink composition includes solvent, dispersant and coloring material of pigment or dye. The solvent contains therein at least not smaller than 10% by weight non-polar organic solvent which is not higher than 260° C. in 50% running point and at least not smaller than 20% by weight polar organic solvent which is not lower than 300° C. in 50% running point.

Abstract: A system is provided to recover unutilized energy as electric power in hydraulic turbine power generation. The system includes a heat storage tank, a pump for pumping water from the heat storage tank and to air conditioning loads, a first water feed pipe connected between an outlet of the storage pump and the air conditioning loads, and a second water feed pipe for returning the water discharged from the air-conditioning loads. A hydraulic turbine driven generator is provided on a lower portion of the second water feed pipe at such a position as to recover the potential energy of the water discharged from the air conditioning loads.

Abstract: Provided is a GaN-based semiconductor light emitting device formed on a GaN single-crystal substrate and having a configuration capable of reducing a current leak. A GaN-based semiconductor laser device (50) is disclosed as an example of the GaN-based semiconductor light emitting device, and it is a semiconductor laser device having a structure such that a p-side electrode and an n-side electrode are provided on a multilayer structure of GaN-based compound semiconductor layers. The GaN-based semiconductor laser device (50) is similar in configuration to a conventional GaN-based semiconductor laser device formed on a sapphire substrate except that a GaN single-crystal substrate (52) is used in place of the sapphire substrate and that the multilayer structure is directly formed on the GaN single-crystal substrate (52) without providing a GaN-ELO structure layer. The GaN single-crystal substrate (52) has continuous belt-shaped core portions (52a) each having a width of 10 ?m.

Abstract: A non-aqueous ink composition includes pigment, solvent and dispersant. The dispersant has an ester structure and the solvent contains not smaller than 60% by weight polar organic solvent. The polar organic solvent contains not smaller than 10% by weight ester solvent.

Abstract: A system is provided to recover unutilized energy as electric power in hydraulic turbine power generation. The system includes a heat storage tank, a pump for pumping water from the heat storage tank and to air conditioning loads, a first water feed pipe connected between an outlet of the storage pump and the air conditioning loads, and a second water feed pipe for returning the water discharged from the air-conditioning loads. A hydraulic turbine driven generator is provided on a lower portion of the second water feed pipe at such a position as to recover the potential energy of the water discharged from the air conditioning loads.

Abstract: A current driven D/A converter sets an OFF control voltage (BIAS3) for turning off NMOS transistors M12P, M12N, M22P, M22N, M32P and M32N at a voltage close to an ON control voltage (BIAS2). This makes it possible to reduce the swing of the control voltage (ON control voltage—OFF control voltage) of the NMOS transistors, and hence to reduce the noise due to charge injections through parasitic capacitances, and noise of a ground voltage or power supply voltage due to flowing of discharge currents from the parasitic capacitances to the ground or power supply at turn off of the transistors, thereby being able to offer a high performance current driven D/A converter.

Abstract: In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

Abstract: In the carrier member, the connecting fiber connects a periphery part of the opening of the front surface layer and a periphery part of the opening of the back surface layer in each opening. At least one part of at least one connecting fiber is located inside each virtual space. The virtual space is a space which is surrounded with both surface layers and virtual vertical walls. The virtual vertical walls are extended, from inner edges of the periphery part of the opening of one layer, to the other layer. Since the carrier member has many opportunities for the volatile component to touch the air blow, the carrier member is superior in ability to volatilize the volatile component held by the carrier member.

Abstract: A frequency converter for outputting a power to drive a motor, having: an inverter unit for inverting a d.c. power to an a.c. power; a control unit for controlling the inverter unit; and a housing for supporting at least the inverter unit and control unit, wherein a rise time change unit is provided in the housing, the rise time change unit changes a rise time of a waveform of a voltage output from the inverter unit.

Abstract: A method of fabricating a nitride semiconductor includes the steps of forming a nitride semiconductor doped with a p-type impurity, treating the surface of the nitride semiconductor in an atmosphere containing active oxygen to remove carbon remaining on the surface and form an oxide film thereon, and activating the p-type impurity to turn the conductive type of the nitride semiconductor into a p-type. Since carbon remaining on the surface of the nitride semiconductor is removed and the oxide film is formed thereon, the surface of the nitride semiconductor is prevented from being deteriorated by the activating treatment and the rate of activating the p-type impurity is enhanced. As a result, it is possible to reduce the contact resistance of the nitride semiconductor with an electrode and, hence, the variation in characteristics of the nitride semiconductor.

Abstract: The support member is comprised of a carrier which holds a volatile component. The carrier is comprised of a three-dimensional knitted fabric. The three-dimensional knitted fabric is comprised of a first knitted fabric layer, a second knitted fabric layer, and connecting yarns between them. The connecting yarns connect the first knitted fabric layer with the second knitted fabric layer. At least one knitted fabric layer has a mesh-like structure. A plurality of connecting yarns extend from each stitch of the first knitted fabric layer to each stitch of the second knitted fabric layer and connect each other's stitch. The volatile component is impregnated by the carrier or adhered to the carrier, so that the volatile component is held by the carrier.

Abstract: Pests can be controlled by applying an effective amount of a compound of formula (1): wherein R is C2-C6 alkyl, C3-C6 cycloalkyl, (C3-C6 cycloalkyl)C1-C2 alkyl, 3,3,3-trifluoropropyl or 3,3,3-trifluoro-2-methylpropyl to pests or habitats of pests.

Abstract: The present invention relates to an optical mask at low cost and so on having a structure capable of reducing further a peak of beam intensity caused by diffraction. The optical mask is constructed by overlapping a first mask and a second mask. The first mask and second mask each are a serrated aperture mask. The schematic shapes of the respective apertures of the first mask and second mask are almost rectangular and identical to each other. The fringe defining the aperture of the first mask is machined in a serrated shape, and the fringe defining the aperture of the second mask also is machined in a serrated shape. In the optical mask, the first mask and second mask are overlapped so that the serrations of the fringes defining the respective apertures of the first mask and second mask are located alternately.

Abstract: The invention discloses a method for counting foreign matter particles in a vinyl chloride resin powder comprising the steps of: forming an aqueous dispersion of the resin particles in a vessel having a transparent bottom, allowing the particles to settle forming a layer together with the foreign matter particles and viewing the layer of the deposited particles through the transparent bottom of the vessel to count the foreign matter particles in the deposited layer. The invention also provides an apparatus system for automatically counting foreign matter particles which comprises a vessel having a transparent bottom, a feed means for the resin powder, a water supply means, a stirrer means to form an aqueous dispersion in the vessel, a viewing means such as a CCD camera for recording the bottom image of the deposited layer through the transparent bottom of the vessel, and a control means for bringing the various parts of the system into a sequential linkage motion.

Abstract: An ink for inkjet recording containing a vehicle, coloring agents dispersed therein, and a dispersing agent for the coloring agents as required, is provided. The vehicle contains at least a first solvent component and a second solvent component. The first solvent component has the lowest boiling point among the components in the ink, and has a higher viscosity than the ink. The second solvent component has a higher boiling point than the first one. The boiling point of the first solvent component is preferably 280 degree C. or below, and the content thereof is preferably 10 to 80% by weight based on the total weight of the ink. Even when the ink is printed on non-coated papers, the vehicle penetrates little in the thickness direction and bleeds little in the horizontal direction. Clogging in the nozzles can be prevented effectively using the ink even when it has been left in an open atmosphere for a long time.

Abstract: In a multi-beam semiconductor laser including nitride III-V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III-V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

Abstract: A Veff detector circuit generates input voltages VEP, VEN on the basis of a bias voltage which is fed back so that the difference between these input voltages may be a saturation voltage Veff, and a four-input operational amplifier means receives the input voltages VEP, VEN generated by the Veff detector circuit and generates the bias voltage VB by using reference voltages VERP, VERN which are externally inputted.

Abstract: It is provided an object of the invention to recover unutilized energy as electric power by the hydraulic turbine power generation so as to reuse it.

Abstract: A non-aqueous ink composition includes solvent, dispersant and coloring material. The solvent contains therein not smaller than 10% by weight non-polar organic solvent which is not higher than 280° C. in 50% running point and not smaller than 20% by weight polar organic solvent which is not lower than 300° C. in 50% running point.