Abstract: A space 12 is formed at a tip portion of a nozzle 1 so as to decrease a thermal transfer of the nozzle 1. Alternatively, a center portion of one of a semi-spherically protruded surface of the tip portion of the nozzle 1 and a semi-spherically recessed surface of a sprue bush protrudes so that the radius of curvature of one semi-spherical surface is the same as the radius of curvature of the other semi-spherical surface. As a result, since the nozzle 1 and the sprue bush 2 are surface-contacted, heat of the tip portion of the nozzle 1 absorbed to the sprue bush 2 is increased. Thus, the temperature of the tip portion of the nozzle 1 can be lowered easily. After the resin material injected into the molding cavity 11 is cooled, when the sprue portion is removed from the fixed die, a tip portion of a rod-shaped protrusion portion of the sprue can be properly cut.

Abstract: The present invention provides an input/output device capable of bringing a per-unit input/output circuit into a simple configuration without impairing reliability even when logic levels opposite in polarity are outputted between input/output devices made conductive to the outside. The input/output device is equipped with one reference port Pk selected from a port group which inputs and outputs signals, target ports Pt selected from other than the reference port of the port group, and a conduction detector which detects that conduction is made between input/output terminals for the reference port Pk and the target ports Pt.

Abstract: On forming a ferroelectric capacitor structure, an IrO2 film and an IrOx film which are constituents of an upper electrode layer are sequentially formed on a capacitor film. By RTA treatment at 600° C. to 750° C., in this case, at 725° C. for about one minute under an O2 atmosphere, only a surface layer of the IrOx film is oxidized, and a highly oxidized layer which is higher in oxidation degree as compared with the other portion of the IrOx film is formed.

Abstract: A linear drive apparatus comprising: a guide having an internal body; a slider moved along the guide, a driving mechanism for generating a driving force by magnetic interaction of the slider with the guide so as to linearly drive the slider; and a magnetic measurement unit having a magnetic scale and a detector which are opposed to each other and change a relative position relative to each other in order to obtain the relative position of the slider relative to the guide, wherein an opposing direction of the magnetic scale and the detector is the direction of the outer circumference of the guide, and the detector detects a signal from the magnetic scale in accordance with the relative position of the slider, whereby the relative position of the slider is obtained.

Abstract: A ferroelectric capacitor includes a pair of electrodes, and at least one ferroelectric held between the pair of electrodes, in which the ferroelectric includes a first ferroelectric layer having a surface roughness (RMS) determined with an atomic force microscope of 10 nm or more; and a second ferroelectric layer being arranged adjacent to the first ferroelectric layer and having an RMS of 5 nm or less. A process produces such a ferroelectric capacitor by forming a first ferroelectric layer on or above one of a pair of electrodes at a temperature equal to or higher than a crystallization temperature at which the first ferroelectric layer takes on a ferroelectric crystalline structure, and forming a second ferroelectric layer on the first ferroelectric layer at a temperature lower than a crystallization temperature at which the second ferroelectric layer takes on a ferroelectric crystalline structure.

Abstract: A photosensitive recording medium cartridge comprising: a photosensitive recording medium; a cartridge body including a disc storage portion where the photosensitive recording medium is received rotatably, an opening portion formed in a side surface of the cartridge body in an insertion direction, shutter slide surfaces offset inward and formed in an outer surface of the cartridge body so as to be connected to the opening portion-side side surface, and an inner opening for exposing a center and a recording surface of the photosensitive recording medium to the outside; a shutter as defined herein; and a lid fixed to the side surface of the cartridge body so as to close the opening portion, wherein the shutter is attached to the shutter slide surfaces while the movement of the shutter is limited by the lid and first step portions formed in boundaries between the shutter slide surfaces and the outer surface.

Abstract: A manufacturing method of a semiconductor device is disclosed. The manufacturing method includes the steps of forming a contact plug in an insulation film so as to be connected to an element on a semiconductor substrate, applying a PLA process to the insulation film in an NH3 atmosphere, forming a Ti film on the contact plug, nitriding the Ti film to form a TiN film as a part of a lower electrode of a capacitor, and forming a metal film as another part of the lower electrode of the capacitor on the titanium nitride film.

Abstract: A manufacturing method of a semiconductor device is disclosed. The manufacturing method includes the steps of forming a contact plug in an insulation film so as to be connected to an element on a semiconductor substrate, applying PLA pretreatment to the insulation film in an NH3 atmosphere, forming a Ti film over the contact plug, nitriding the Ti film to form a TiN film as a part of a lower electrode of a capacitor, and forming a metal film as another part of the lower electrode of the capacitor on the titanium nitride film.

Abstract: A system for recording/reproducing a photosensitive recording medium, comprising: a photosensitive recording medium cartridge including a cartridge body, a shutter, and a lock mechanism as defined herein; and a recording/reproducing device including a housing, an insertion port shutter, an unlock mechanism, and a shutter opening mechanism as defined herein.

Abstract: A bottom electrode (52) made of Ir, an initial layer (53), a core layer (54) and a termination layer (55) of a PZT film, and a top electrode (56) made of IrO2, are formed on an underlining film (51). The initial layer (53) is formed in a low oxygen partial pressure with a thickness of 5 nm. The thickness of the core layer (54) is set to 120 nm. The termination layer (55) is set to be an excess Zr layer. In other words, as for the composition of the termination layer (55), “Zr/(Zr+Ti)” is set to be larger than 0.5, and in the termination layer (55) Zr is contained more excessively than the morphotropic phase boundary composition.

Abstract: A resin ring 51 is press-fitted into a grove portion formed in an inner periphery surface of an interlocking ring 4. The resin ring 51 is made of a hard resin such as Teflon. The resin ring 51 as a low frictional lubricative member is interposed between the interlock ring 4 and an outer periphery ring 3. In addition, a cavity 6 as a closed space is formed between a stamper 1b as a molding surface of a fixed side mirror 1 and a mirror side molding surface 2b of a moving side mirror 2. While the moving side mirror 2 is being press-contracted to the fixed side mirror 1, when a resin material is filled into the cavity 6, the outer periphery ring 3 is slidably held in a groove of the moving side mirror 2 with predetermined clearances. In the interlock ring 4, a plurality of openings 4a which relieve gas produced by the disc resin material filled into the cavity 6 are formed.

Abstract: In a semiconductor device comprising a non-volatile memory, a reset input control circuit is provided not to supply the reset signal to the non-volatile memory even when the reset signal is supplied from the external side while the BUSY/READY signal from the non-volatile memory is activated. With the reset input control circuit, over-erase of the non-volatile memory can e prevented because reset is never conducted while the non-volatile memory executes the erase process.

Abstract: A ferroelectric capacitor includes a pair of electrodes, and at least one ferroelectric held between the pair of electrodes, in which the ferroelectric includes a first ferroelectric layer having a surface roughness (RMS) determined with an atomic force microscope of 10 nm or more; and a second ferroelectric layer being arranged adjacent to the first ferroelectric layer and having an RMS of 5 nm or less. A process produces such a ferroelectric capacitor by forming a first ferroelectric layer on or above one of a pair of electrodes at a temperature equal to or higher than a crystallization temperature at which the first ferroelectric layer takes on a ferroelectric crystalline structure, and forming a second ferroelectric layer on the first ferroelectric layer at a temperature lower than a crystallization temperature at which the second ferroelectric layer takes on a ferroelectric crystalline structure.

Abstract: After a MOS transistor is formed on a semiconductor substrate, an Ir film, LT film, PZT film, and IrO2 film are formed in this order on the entire surface. Although the LT film itself is not a ferroelectric film, a ferroelectric film is formed by a stacked film of the LT film and PZT film. In a ferroelectric capacitor having this ferroelectric film, the LT film does not contain Pb, so the alignment can be readily controlled during the film formation. This raises the alignment of the LT film. The crystal structure of the LT film is a perovskite structure similar to that of the PZT film. Since the PZT film is formed on this LT film, the alignment of the LT film is taken over when the PZT film is grown. This raises the alignment of the PZT film.

Abstract: A clamping apparatus includes a fixed die plate (21) fixed to a frame (26), four tie rods (23), (24) extending in the horizontal direction and respectively fixed to the fixed die plate (21) in parallel to each other, a moving die plate (22) supported to the four tie rods (23), (24) so that the moving die plate (22) can slide freely and a clamping mechanism for moving the moving die plate (22) forward and backward along the four tie rods (23), (24). This clamping apparatus comprises a guide mechanism (25) for downwardly or upwardly supporting the moving die plate (22) and which allows the moving die plate (22) to move in the opposite direction of gravitation.

Abstract: A ferroelectric capacitor includes a pair of electrodes, and at least one ferroelectric held between the pair of electrodes, in which the ferroelectric includes a first ferroelectric layer having a surface roughness (RMS) determined with an atomic force microscope of 10 nm or more; and a second ferroelectric layer being arranged adjacent to the first ferroelectric layer and having an RMS of 5 nm or less. A process produces such a ferroelectric capacitor by forming a first ferroelectric layer on or above one of a pair of electrodes at a temperature equal to or higher than a crystallization temperature at which the first ferroelectric layer takes on a ferroelectric crystalline structure, and forming a second ferroelectric layer on the first ferroelectric layer at a temperature lower than a crystallization temperature at which the second ferroelectric layer takes on a ferroelectric crystalline structure.

Abstract: A ferroelectric capacitor having a ferroelectric layer and a pair of electrodes, in which the ferroelectric layer contains carbon or carbon atoms of 5×1018 cm−3 or less, and the pair of electrodes is formed by a MOCVD (Metal Organic Chemical Vapor Deposition) method. A process for manufacturing a ferroelectric capacitor having the steps of forming a ferroelectric layer on one of a pair of electrodes; heating the layer at a temperature higher than when forming the layer, and to form the other electrode on the ferroelectric layer, or the steps of forming a ferroelectric layer on one of a pair of electrodes; forming the other electrode on the ferroelectric layer; and heating the layer at a temperature higher than when forming the layer to form the other electrode on the ferroelectric layer, to control carbon atoms of the ferroelectric layer to be 5×1018 cm−3 or less.

Abstract: A space 12 is formed at a tip portion of a nozzle 1 so as to decrease a thermal transfer of the nozzle 1. Alternatively, a center portion of one of a semi-spherically protruded surface of the tip portion of the nozzle 1 and a semi-spherically recessed surface of a sprue bush protrudes so that the radius of curvature of one semi-spherical surface is the same as the radius of curvature of the other semi-spherical surface. As a result, since the nozzle 1 and the sprue bush 2 are surface-contacted, heat of the tip portion of the nozzle 1 absorbed to the sprue bush 2 is increased. Thus, the temperature of the tip portion of the nozzle 1 can be easily lowered. After resin material injected into the molding cavity 11 is cooled, when the sprue is removed, a tip portion of a rod-shaped protrusion portion of the sprue can be properly cut.

Abstract: A ferroelectric capacitor includes a pair of electrodes, and at least one ferroelectric held between the pair of electrodes, in which the ferroelectric includes a first ferroelectric layer having a surface roughness (RMS) determined with an atomic force microscope of 10 nm or more; and a second ferroelectric layer being arranged adjacent to the first ferroelectric layer and having an RMS of 5 nm or less. A process produces such a ferroelectric capacitor by forming a first ferroelectric layer on or above one of a pair of electrodes at a temperature equal to or higher than a crystallization temperature at which the first ferroelectric layer takes on a ferroelectric crystalline structure, and forming a second ferroelectric layer on the first ferroelectric layer at a temperature lower than a crystallization temperature at which the second ferroelectric layer takes on a ferroelectric crystalline structure.

Abstract: After a MOS transistor is formed on a semiconductor substrate, an Ir film, LT film, PZT film, and IrO2 film are formed in this order on the entire surface. Although the LT film itself is not a ferroelectric film, a ferroelectric film is formed by a stacked film of the LT film and PZT film. In a ferroelectric capacitor having this ferroelectric film, the LT film does not contain Pb, so the alignment can be readily controlled during the film formation. This raises the alignment of the LT film. The crystal structure of the LT film is a perovskite structure similar to that of the PZT film. Since the PZT film is formed on this LT film, the alignment of the LT film is taken over when the PZT film is grown. This raises the alignment of the PZT film.