Abstract: High performance hose is disclosed which is characterized by enhanced heat resistance, leading to prolonged service life, and hence are suitable for use in automobile power steering units. The inner tube has a double-layered construction composed of an inner layer of hydrogenated acrylonitrile/butadiene copolymer rubber and an outer layer of rubber composition which comprises specified amounts of a selected class of sulfurs, organic peroxide and triazine compounds combined with selected sulfur-curable base rubbers.

Abstract: Rubber compositions are disclosed which are characterized by enhanced adhesion to hydrogenated acrylonitrile-butadiene rubbers and to metallic and fibrous materials, and also be improved modulus at 100% elongation, and hence are suitable particularly for use in tires, belts, molded articles, rubber rolls and hoses. Such physical characteristics are obtained by the use of specified amounts of a selected class of sulfurs, organic peroxides and triazine compounds combined with selected sulfur-curable base rubbers.

Abstract: A semiconductor device comprising a semiconductor substrate, a plurality of IIL gates formed in the substrate, each consisting of an inverter transistor and an injector transistor, and polysilicon films of P and N conductivity types connected to each other and formed as electrode layers connected with diffusion layers of P and N conductivity types which are formed on the substrate, respectively.

Abstract: An exposed surface of a semiconductor substrate with an integrated injection logic semiconductor region having a first conductivity injector region of which one surface is exposed, a first conductivity type base region of which part of the surface is exposed, and a second conductivity type collector region of which one surface is exposed and the remaining surfaces are surrounded by the base region, is covered with SiO.sub.2. Contact holes are holed in the SiO.sub.2 layer at the locations facing the injector regions, the base regions and the collector region. Through the contact holes, first conductivity type ions are injected into the semiproduct of the semiconductor device. As a result, the surface impurity concentrations of the injector region, the base region and the collector region are 1.times.10.sup.19 /cm.sup.3 or more. Interconnection electrodes of, for example, MoSi.sub.2 make ohmic contact with the respective regions.

Abstract: A process for fabricating a bipolar integrated circuit comprises the steps of:forming isolation regions in an epitaxial layer of a second conductivity type formed on a semiconductor substrate of a first conductivity type;forming a thermal oxidation layer on the surface of said epitaxial layer;forming a diffusion region of the first conductivity type for a lower part electrode by selectively implanting by ion implantation an impurity of the first conductivity type in a capacitor-forming region of surrounded by said isolation region through said thermal oxidation layer and annealing thereafter;forming a diffusion region of the second conductivity type for an external electrode by selectively diffusing an impurity of the second conductivity type into said capacitor-forming region through a contact hole formed in said thermal oxidation layer; andforming a contact hole for exposing part of said diffusion layer of the first conductivity type; and forming a metal layer for electrodes on the surface of said epitaxial