Abstract: A water amount measurement device includes a light emitting element to emit light, a light receiving element to receive the light reflected by a liquid surface and by a liquid bottom at a bottom surface within a pipeline, a storage to store a distance from the light emitting element to the liquid bottom, and a processor. The processor computes a water level of the liquid flowing through the pipeline according to different formulas depending on whether a comparison result of distance data obtained based on an output signal of the light receiving element, and the distance at a time of measurement, includes a component corresponding to a distance exceeding the distance generated by the reflection from the liquid bottom, or the comparison result includes a component corresponding to a distance less than the distance generated by the reflection from the liquid surface.

Abstract: A gas sensor includes a p-type semiconductor layer that contains copper or silver cations and contacts with detection target gas, a first electrode that is a Schottky electrode to the p-type semiconductor layer, a high-resistance layer that is provided between the p-type semiconductor layer and the first electrode such that the p-type semiconductor layer and the first electrode partly contact with each other and has resistance higher than that of each of the p-type semiconductor layer and the first electrode, and a second electrode that is an ohmic electrode to the p-type semiconductor layer.

Abstract: A sensor device includes a first electrode and a second electrode disposed over a substrate, and a sensitive film including a base film which couples the first electrode and the second electrode to each other and contains Cu and a halogen element and PEDOT/PSS which bonds to the base film.

Abstract: A semiconductor material includes polythiophene, sulfonic acid, and copper ion. The copper ion is bonded to the sulfonic acid.

Abstract: A gas sensor device includes a first electrode, a second electrode, and a polythiophene film which is formed between the first and second electrodes to be electrically coupled to the first and second electrodes, and to which cuprous bromide is adsorbed.

Abstract: A distance measuring device includes one or more processors configured to: detect a wave formed by synthesizing a frequency-swept electromagnetic wave transmitted to an object with a wave reflected on the object; measure, based on the synthesized wave, a distance to the object; calculate a displacement-caused inclination, caused by the displacement of the object, of a power spectrum of the synthesized wave; and measure the distance based on a signal in which the displacement-caused inclination has been removed from the power spectrum.

Abstract: A measurement device includes a first flow passage, a heating unit provided on one end side of the first flow passage, a gas detection unit provided on one end side of the first flow passage and capable of detecting a gas through heat applied from the heating unit, and a particle measurement unit which optically measures, at an upper side than the heating unit of the first flow passage, particles passing through the first flow passage.

Abstract: A gas sensor including a first layer including copper (I) bromide, and a second layer, which is disposed on the first layer, and is a p-type semiconductor that is different from the copper (I) bromide, wherein one of the first layer and the second layer is more preferentially in contact with detection-target gas than the other.

Abstract: A thermoelectric conversion device includes: a thermoelectric conversion element in which a p-type thermoelectric material and an n-type thermoelectric material that are provided between an upper electrode and a lower electrode of the thermoelectric conversion element are alternately connected in series via the upper electrode and the lower electrode; an insulating layer that is provided between the upper electrode and the lower electrode and covers the p-type thermoelectric material and the n-type thermoelectric material; and an electric storage element that is provided between the upper electrode and the lower electrode and is covered by the insulating layer.

Abstract: A gas sensor device has a crystalline film of copper(I) bromide, wherein a crystal surface of the copper(I) bromide is formed of a stepped terrace having a flat face and a steep slope.

Abstract: The following disclosure provides a power strip including: a busbar electrically connected to a power source; multiple electrical outlets allowing multiple power plugs to be inserted thereinto, respectively; distribution bars which are branched out from the busbar and respectively supply the electrical outlets with electric currents of the power source; and a plurality of electric current measurement units each configured to measure the electric current flowing through a corresponding one of the distribution bars.

Abstract: A downsized current sensor with a switch function is disclosed. The current sensor includes: a magnetic circuit to converge a magnetic flux generated from an electric circuit at a magnetic sensor; a switch to open and close the electric circuit in a way that operates together with a movable magnetic body configuring a part of the magnetic circuit; and a magnetizing coil to generate magnetic force enabling the movable magnetic body to be attracted to a fixed magnetic body configuring a part of the magnetic circuit.

Abstract: A gas sensor includes a p-type semiconductor layer that contains copper or silver cations and contacts with detection target gas, a first electrode that is a Schottky electrode to the p-type semiconductor layer, a high-resistance layer that is provided between the p-type semiconductor layer and the first electrode such that the p-type semiconductor layer and the first electrode partly contact with each other and has resistance higher than that of each of the p-type semiconductor layer and the first electrode, and a second electrode that is an ohmic electrode to the p-type semiconductor layer.

Abstract: A gas sensor includes a p-type semiconductor layer that contains a compound of copper or silver and contacts with detection target gas, a first electrode that is a Schottky electrode to the p-type semiconductor layer, a high-resistance layer that is provided between the p-type semiconductor layer and the first electrode and has resistance higher than that of each of the p-type semiconductor layer and the first electrode, and a second electrode that is an ohmic electrode to the p-type semiconductor layer.

Abstract: A power generation device includes a thermoelectric conversion part; a cooling member configured to be disposed on one principal surface of the thermoelectric conversion part; and a heat generation part configured to be disposed on another principal surface of the thermoelectric conversion part, to be formed of a viscoelastic body having a plurality of cavities formed in the viscoelastic body, and to generate heat by violation.

Abstract: A gas analyzer including: a chamber; a first gas sensor provided in the chamber and including a first gas sensitive member; a second gas sensor provided in the chamber and including a second gas sensitive member; and a detector that detects each of resistance changes of the first and the second gas sensitive members; wherein the first gas sensitive member is an oxide semiconductor mainly composed of at least one of Sn, W, Zn and In or a semiconductor mainly composed of C, and the second gas sensitive member is mainly composed of a halide or an oxide of Cu or Ag.

Abstract: A gas sensor device includes: a sensor film including a sensor surface and a resistance which increases with an increase in an amount of gas adsorbed on the sensor surface; a first electrode, a second electrode, and a third electrode that are electrically coupled to the sensor film; and a protective film that covers the sensor surface in a region between the first electrode and the second electrode, wherein the sensor surface is exposed in a region near the third electrode.

Abstract: A water amount measurement device includes a light emitting element to emit light, a light receiving element to receive the light reflected by a liquid surface and by a liquid bottom at a bottom surface within a pipeline, a storage to store a distance from the light emitting element to the liquid bottom, and a processor. The processor computes a water level of the liquid flowing through the pipeline according to different formulas depending on whether a comparison result of distance data obtained based on an output signal of the light receiving element, and the distance at a time of measurement, includes a component corresponding to a distance exceeding the distance generated by the reflection from the liquid bottom, or the comparison result includes a component corresponding to a distance less than the distance generated by the reflection from the liquid surface.

Abstract: An electronic device includes: a substrate; a first all-solid-state secondary cell provided on the substrate, the first all-solid-state secondary cell including a first electrode layer, a solid electrolyte layer, and a second electrode layer; a first transistor including a first source drain, a second source drain electrically connected to the second electrode layer, and a first gate electrode; a first terminal electrically connected to the first electrode layer; a second terminal to control a potential of the first gate electrode; a third terminal electrically connected to the first source drain; and a sealing layer covering the first all-solid-state secondary cell and the first transistor, wherein the first terminal, the second terminal, and the third terminal are exposed on an upper surface of the sealing layer.

Abstract: A measurement device includes a first flow passage, a heating unit provided on one end side of the first flow passage, a gas detection unit provided on one end side of the first flow passage and capable of detecting a gas through heat applied from the heating unit, and a particle measurement unit which optically measures, at an upper side than the heating unit of the first flow passage, particles passing through the first flow passage.