Abstract: The present invention relates to a thermoelectric conversion element and a method for manufacturing the same and relates to suppression of breakage and deterioration of the thermoelectric conversion element due to partial pressurization from the vertical direction. This thermoelectric conversion element has: at least one n-type semiconductor body; at least one p-type semiconductor body; a first connecting electrode; a first out-put electrode for n-side output; and a second output electrode for p-side output, wherein areas of respective joint sections of the n-type semiconductor body with the first connecting electrode, the first output electrode, and the second output electrode and of the p-type semiconductor body with the first connecting electrode, the first output electrode, and the second output electrode are greater than respective cross-sectional areas in other positions, in an axial direction, of the n-type semiconductor body and the p-type semiconductor body.

Abstract: A gas sensor including a first layer including copper (I) bromide, and a second layer, which is disposed on the first layer, and is a p-type semiconductor that is different from the copper (I) bromide, wherein one of the first layer and the second layer is more preferentially in contact with detection-target gas than the other.

Abstract: A gas sensor, which includes a solid electrolyte layer including positive charge carriers to which detection-target gas coordinates, an electrode arranged on part of a plane of the solid electrolyte layer, and a unit configured to accelerate movements of the positive charge carriers.

Abstract: A method of calculating a current correction formula may include first measuring voltage values at each of current measuring parts configured to measure currents in socket parts of a power strip in a state in which no current flows in the socket parts, second measuring the voltage values at each of the current measuring parts in a state in which a current flows in one of the socket parts, and calculating a correction formula formed by a inverse matrix of a matrix having as its elements differences between the voltage values measured by the second measuring and the voltage values measured by the first measuring.

Abstract: An actuator includes a first part having a magnetomotive element and configured to absorb heat up to at least a first temperature; a second part arranged so as to face the first part; a temperature-sensitive magnetic body provided between the first part and the second part and configured to move between a first position for contact with the first part and a second position for contact with the second part, the temperature-sensitive magnetic body having a Curie point lower than the first temperature and higher than a temperature of the second part; and a restoring part configured to restore the temperature-sensitive magnetic body from the first position to the second position.

Abstract: A gas sensor includes a p-type semiconductor layer in which a surface at a contacting side with detection target gas is covered with tertiary amine and two electrodes electrically coupled with each other through the p-type semiconductor layer.

Abstract: A microchannel cooling device includes a heat sink having a liquid refrigerant flow channel having a microscopic cross section and connected to a heat source thermally, and a thermoelectric element provided on the heat sink and extending parallel to a direction of extension of the liquid refrigerant flow channel.

Abstract: The invention relates to a semiconductor device, a method for manufacturing a semiconductor device and an electronic thermoelectric power generation device, a semiconductor device having a thermoelectric conversion element that is embedded in a semiconductor chip so as to be integrated with a semiconductor circuit can be implemented. A semiconductor substrate is provided with a through opening for a region in which a thermoelectric conversion element is to be formed, and a thermoelectric conversion element is embedded in the through opening, where the thermoelectric conversion element includes: a number of penetrating rods made of a thermoelectric conversion material; and an insulating reinforcement layer in which the penetrating rods are embedded and of which the thermal conductivity is lower than that of the thermoelectric conversion material.

Abstract: The following disclosure provides a power strip including: a busbar electrically connected to a power source; multiple electrical outlets allowing multiple power plugs to be inserted thereinto, respectively; distribution bars which are branched out from the busbar and respectively supply the electrical outlets with electric currents of the power source; and a plurality of electric current measurement units each configured to measure the electric current flowing through a corresponding one of the distribution bars.

Abstract: A micro movable device includes: a micro movable substrate including a micro movable unit, the micro movable unit including a frame section, a movable section, and a coupling section which couples the frame section and the movable section to each other; a support base; a first spacer and a second spacer which are provided between the frame section of the micro movable substrate and the base, the first and second spacers joining the frame section and the base to each other; and a fixation member provided between the frame section of the micro movable substrate and the base, the fixation member including a spacer portion which joins the frame section and the base to each other and an adhesive portion which covers the spacer portion and joins the frame section and the base to each other, the fixation member being provided between the first and second spacers.

Abstract: The following disclosure provides a power strip including: a busbar electrically connected to a power source; multiple electrical outlets allowing multiple power plugs to be inserted thereinto, respectively; distribution bars which are branched out from the busbar and respectively supply the electrical outlets with electric currents of the power source; and a plurality of electric current measurement units each configured to measure the electric current flowing through a corresponding one of the distribution bars.

Abstract: A power strip includes: a first power line; a second power line between which and the first power line a power supply voltage is applied; a jack portion; a current meter configured to measure a current being supplied to an external electrical device from the jack portion; a first photocoupler including a first light emitting diode connected between the first power line and the second power line and configured to output a first output signal whose level is changed when the power supply voltage exceeds a first threshold; and a computing unit configured to calculate a power value by using instantaneous values of the current measured by the current meter and instantaneous values of the power supply voltage estimated from the length of a period when the level of the first output signal is changed.

Abstract: A power strip includes a casing including a plurality of plug insertion portions each having a first insertion port and a second insertion port into which first and second plug blades of a socket plug are to be respectively inserted, a magnetic core which is provided in each of the plurality of plug insertion portions and includes a first opening into which the first plug blade is to be inserted, a second opening into which the second plug blade is to be inserted, and a slit to communicate between the first plug blade and the second plug blade, and a magnetic sensor provided inside the slit.

Abstract: A power strip includes: jack portions; current meters each configured to measure a current being supplied from the corresponding jack portion to one of external electrical devices, and to output a measurement signal corresponding to a magnitude of the current; and a computing unit configured to obtain instantaneous values of the current at a plurality of time points on the basis of the measurement signal, and to calculate a power value using the instantaneous values. The computing unit configured to obtain the instantaneous values-of the current by using any one of a first zero point and a second zero point as a reference.

Abstract: A three-dimensional mounting semiconductor device includes a layer structure including a plurality of first substrates with a trench-shaped concavity formed in and a plurality of second substrates with semiconductor elements formed in, which are alternately stacked, wherein an unevenness defined by a size difference between the first substrate and the second substrate is formed on a side surface, and a first through-hole are defined by an inside surface of the trench-shaped concavity and a surface of the second substrate, and a third substrate jointed to the side surface of the layer structure and having an unevenness formed on a surface jointed to the layer structure which are engaged with the unevenness formed on the side surface of the layer structure.

Abstract: A micro movable device includes: a micro movable substrate in which a micro movable unit is formed, the micro movable unit including a frame, a movable part, and a coupling part for coupling the frame and the movable part to define an axial center of rotation of the movable part; a supporting substrate; and a reinforced fixed part provided between the frame and the supporting substrate, and including a first spacer that joins the frame to the supporting substrate and an adhesive part that covers the first spacer and joins the frame to the supporting substrate, wherein the frame includes a first area facing the movable part in a direction of extent of the axial center, and a second area different from the first area, and the reinforced fixed part is bonded to the second area of the frame.

Abstract: An electronic device includes: a substrate; a first all-solid-state secondary cell provided on the substrate, the first all-solid-state secondary cell including a first electrode layer, a solid electrolyte layer, and a second electrode layer; a first transistor including a first source drain, a second source drain electrically connected to the second electrode layer, and a first gate electrode; a first terminal electrically connected to the first electrode layer; a second terminal to control a potential of the first gate electrode; a third terminal electrically connected to the first source drain; and a sealing layer covering the first all-solid-state secondary cell and the first transistor, wherein the first terminal, the second terminal, and the third terminal are exposed on an upper surface of the sealing layer.

Abstract: A power strip includes a casing including a plurality of plug insertion portions each having a first insertion port and a second insertion port into which first and second plug blades of a socket plug are to be respectively inserted, a magnetic core which is provided in each of the plurality of plug insertion portions and includes a first opening into which the first plug blade is to be inserted, a second opening into which the second plug blade is to be inserted, and a slit to communicate between the first plug blade and the second plug blade, and a magnetic sensor provided inside the slit.

Abstract: The invention relates to a semiconductor device, a method for manufacturing a semiconductor device and an electronic thermoelectric power generation device, a semiconductor device having a thermoelectric conversion element that is embedded in a semiconductor chip so as to be integrated with a semiconductor circuit can be implemented. A semiconductor substrate is provided with a through opening for a region in which a thermoelectric conversion element is to be formed, and a thermoelectric conversion element is embedded in the through opening, where the thermoelectric conversion element includes: a number of penetrating rods made of a thermoelectric conversion material; and an insulating reinforcement layer in which the penetrating rods are embedded and of which the thermal conductivity is lower than that of the thermoelectric conversion material.

Abstract: A thermoelectric conversion device includes: a thermoelectric conversion element in which a p-type thermoelectric material and an n-type thermoelectric material that are provided between an upper electrode and a lower electrode of the thermoelectric conversion element are alternately connected in series via the upper electrode and the lower electrode; an insulating layer that is provided between the upper electrode and the lower electrode and covers the p-type thermoelectric material and the n-type thermoelectric material; and an electric storage element that is provided between the upper electrode and the lower electrode and is covered by the insulating layer.