Patents by Inventor Osamu Tsuboi
Osamu Tsuboi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7151025Abstract: A method of manufacturing a semiconductor device on a semiconductor substrate having a first region and a second region. This method beings by forming a transistor in the first region of said semiconductor substrate. This transistor includes a pair of impurity diffusion regions and a gate electrode. Then forming a first insulating film over the first and second regions with this first insulating film covering the transistor in the first region. Thereafter, patterning the first insulating film to selectively remove the first insulating film in the second region. Then forming a second insulating film over the first and second regions. Thereafter, forming at least one contact hole through the second and first insulating film. The contact hole reaches one of the impurity diffusion regions. Finally, forming a conductive layer in the contact hole.Type: GrantFiled: March 17, 2003Date of Patent: December 19, 2006Assignee: Fujitsu LimitedInventors: Kazuo Itabashi, Osamu Tsuboi, Yuji Yokoyama, Kenichi Inoue, Koichi Hashimoto, Wataru Futo
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Patent number: 7145712Abstract: A micro mirror unit includes a moving part carrying a mirror portion, a frame and torsion bars connecting the moving part to the frame. The moving part, the frame and the torsion bars are formed integral from a material substrate. The frame includes a portion thicker than the moving part.Type: GrantFiled: October 13, 2004Date of Patent: December 5, 2006Assignee: Fujitsu LimitedInventors: Yoshihiro Mizuno, Satoshi Ueda, Osamu Tsuboi, Ippei Sawaki, Hisao Okuda, Norinao Kouma, Hiromitsu Soneda, Fumio Yamagishi
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Patent number: 7130099Abstract: A micromirror unit is provided which includes a frame, a mirror forming base upon which a mirror surface is formed, and a torsion connector which includes a first end connected to the mirror forming base and a second end connected to the frame. The torsion connector defines a rotation axis about which the mirror forming base is rotated relative to the frame. The torsion connector has a width measured in a direction which is parallel to the mirror surface and perpendicular to the rotation axis. The width of the torsion connector is relatively great at the first end. The width becomes gradually smaller from the first end toward the second end.Type: GrantFiled: January 29, 2004Date of Patent: October 31, 2006Assignee: Fujitsu LimitedInventors: Osamu Tsuboi, Satoshi Ueda, Yoshihiro Mizuno, Ippei Sawaki, Hisao Okuda
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Publication number: 20060233487Abstract: A micro movable element includes a micro movable substrate, a package base and an electroconductive connector. The micro movable substrate is provided with a micro movable unit that includes a frame, a pivotally movable portion, a torsion connector connecting the frame and the movable portion, and an actuator to generate driving force for the pivotal motion of the movable portion. The package base includes an internal interconnect structure. The electroconductive connector is provided between the micro movable substrate and the package base for electrically connecting the actuator and the internal interconnect structure to each other.Type: ApplicationFiled: March 22, 2006Publication date: October 19, 2006Applicant: FUJITSU LIMITEDInventors: Hiromitsu Soneda, Xiaoyu Mi, Hisao Okuda, Osamu Tsuboi, Norinao Kouma, Satoshi Ueda
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Publication number: 20060203319Abstract: A pair of comb-teeth electrodes are made from a material substrate including a first conduction layer, a second conduction layer and an intervening insulation layer. The paired electrodes includes first and second comb-teeth electrodes. The first comb-teeth electrode is composed of a first conductor derived from the first conduction layer, a second conductor derived from the second conduction layer and an insulator derived from the insulation layer. The second comb-teeth electrode is derived from the second conduction layer.Type: ApplicationFiled: March 9, 2006Publication date: September 14, 2006Applicant: FUJITSU LIMITEDInventors: Norinao Kouma, Osamu Tsuboi, Hiromitsu Soneda, Satoshi Ueda
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Patent number: 7099066Abstract: A method is provided for making a micromirror unit which includes a frame, a mirror forming base, and bridges connecting the frame to the mirror forming base. The method includes the following steps. First, a first mask pattern is formed on a substrate for masking portions of the substrate which are processed into the frame and the mirror forming base. Then, a second mask pattern is formed on the substrate for masking portions of the substrate which are processed into the bridges. Then, the substrate is subjected to a first etching process with the first and the second mask patterns present as masking means. Then, the second mask pattern is removed selectively. Then, the substrate is subjected to a second etching process with the first mask pattern present as masking means. Finally, the first mask pattern is removed.Type: GrantFiled: March 18, 2005Date of Patent: August 29, 2006Assignees: Fujitsu Limited, Fujitsu Media Devices LimitedInventors: Osamu Tsuboi, Satoshi Ueda, Yoshihiro Mizuno, Ippei Sawaki, Fumio Yamagishi
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Publication number: 20060180883Abstract: A micro-oscillating element includes a frame, a movable functional portion, and a torsional joint for joining the frame and the functional portion. The micro-oscillating element also includes first and second comb-tooth electrodes for generation of the driving force for the oscillating motion of the movable functional portion about the torsional joint. The first comb-tooth electrode includes a plurality of first electrode teeth each having a first conductor, an insulator and a second conductor laminated in the direction of the oscillating motion, where the first conductor and the second conductor are electrically connected with each other. The second comb-tooth electrode includes a plurality of second electrode teeth caused not to face the second conductor but to face the first conductor of the first electrode teeth during non-operation. The second electrode teeth are longer than the first conductor in the direction of the oscillating motion.Type: ApplicationFiled: February 13, 2006Publication date: August 17, 2006Applicant: FUJITSU LIMITEDInventors: Norinao Kouma, Osamu Tsuboi, Hiromitsu Soneda, Satoshi Ueda
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Publication number: 20060119216Abstract: A micro oscillating element includes a frame and an oscillation section connected to the frame via a torsional joining section. The oscillation section includes a movable functional section, an arm section and a first comb-tooth electrode. The arm section extends from the functional section. The first comb-tooth electrode includes first electrode teeth extending from the arm section in a direction intersecting the arm section. The micro oscillating element further includes a second comb-tooth electrode to cooperate with the first comb-tooth electrode for causing the oscillation section to oscillate about an oscillation axis defined by the torsional joining section. The second comb-tooth electrode includes second electrode teeth extending from the frame in a direction intersecting the arm section.Type: ApplicationFiled: November 14, 2005Publication date: June 8, 2006Applicant: FUJITSU LIMITEDInventors: Norinao Kouma, Osamu Tsuboi, Hiromitsu Soneda, Satoshi Ueda, Ippei Sawaki
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Publication number: 20060120425Abstract: A micro oscillating element is formed integrally from a material substrate made up of a first conductive layer, a second conductive layer and an insulating layer disposed between the first conductive layer and the second conductive layer. This oscillating element includes an oscillation section, an oscillation section supporting frame, and a torsional joining section. The oscillation section includes a movable functional section. The torsional joining section joins the oscillation section and the frame, and also defines an oscillation axis for oscillating action of the oscillation section. The movable functional section is a part formed in the first conductive layer, while the frame is a part formed in the second conductive layer.Type: ApplicationFiled: December 1, 2005Publication date: June 8, 2006Applicant: FUJITSU LIMITEDInventors: Norinao Kouma, Osamu Tsuboi, Hiromitsu Soneda, Satoshi Ueda, Ippei Sawaki
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Publication number: 20060093256Abstract: The optical switch includes: a spectroscopic device which separates wavelength division multiplexed (WDM) light into its component wavelengths; and a plurality of movable reflectors, arranged in a spectral direction at different intervals, for reflecting light of an individual component wavelength separated by said spectroscopic device. With this optical switch, deterioration of the characteristic of the pass band is avoided, so that the pass band characteristic is increased.Type: ApplicationFiled: January 24, 2005Publication date: May 4, 2006Applicant: Fujitsu LimitedInventors: Shinji Yamashita, Tsuyoshi Yamamoto, Tamotsu Akashi, Kohei Shibata, Hirofumi Aota, Osamu Tsuboi
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Patent number: 7038830Abstract: A micro-oscillation element includes a frame, a movable functional part, a driving mechanism, a beam extending from the functional part to the driving mechanism, and a torsion connector for connecting the frame and the beam to each other. The connector defines a rotational axis about which the functional part rotates. The rotational axis crosses the longitudinal direction of the beam. The beam is shorter than the functional part in the longitudinal direction of the rotational axis.Type: GrantFiled: August 26, 2004Date of Patent: May 2, 2006Assignees: Fujitsu Limited, Fujitsu Media Devices LimitedInventors: Osamu Tsuboi, Norinao Kouma, Hisao Okuda, Hiromitsu Soneda, Satoshi Ueda, Ippei Sawaki, Yoshitaka Nakamura
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Patent number: 7033515Abstract: A method is for manufacturing a microstructure having a thin-walled portion with use of a material substrate. The material substrate has a laminated structure which includes a first conductor layer 101, a second conductor layer 102, a third conductor layer 103, a first insulating layer 104 interposed between the first conductor layer and the second conductor layer, and a second insulating layer 105 interposed between the second conductor layer and the third conductor layer. The first insulating layer is patterned to have a first masking part for covering a thin-wall forming region of the second conductor layer. The second insulating layer is patterned to have a second masking part for covering the thin-wall forming region of the second conductor layer.Type: GrantFiled: October 17, 2003Date of Patent: April 25, 2006Assignees: Fujitsu Limited, Fujitsu Media Devices LimitedInventors: Norinao Kouma, Yoshihiro Mizuno, Osamu Tsuboi, Hisao Okuda, Hiromitsu Soneda, Satoshi Ueda, Ippei Sawaki, Yoshitaka Nakamura
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Patent number: 7031041Abstract: A micro-oscillating element is provided with a frame (113) and a oscillating member (111) connected with the frame (113) via a connector (112). Each connector (112) includes two torsion bars (112a), each torsion bar (112a) being constructed so that the rigidity becomes relatively high toward the frame (113) and relatively low toward the oscillating member (111) by forming a plurality of holes (112b).Type: GrantFiled: February 10, 2005Date of Patent: April 18, 2006Assignee: Fujitsu LimitedInventors: Xiaoyu Mi, Osamu Tsuboi, Satoshi Ueda, Ippei Sawaki
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Publication number: 20060057761Abstract: A method of making a microstructure with thin wall portions (T1-T3) includes a step of performing a first etching process to a material substrate having a laminate structure including a first conductive layer (11) and a second conductive layer (12) having a thickness of the thin wall portions (T1-T3), where the etching is performed from the side of the first conductive layer (11) thereby forming in the second conductive layer (12) pre thin wall portions (T1?-T3?) which has a pair of side surfaces apart from each other in an in-plane direction of the second conductive layer (12) and contact the first conductive layer (11). The method also includes a step of performing a second etching process from the side of the first conductive layer (11) for removing part of the first conductive layer (11) contacting the pre thin wall portions (T1?-T3?) to form the thin wall portions.Type: ApplicationFiled: October 25, 2005Publication date: March 16, 2006Applicant: Fujitsu LimitedInventors: Xiaoyu Mi, Norinao Kouma, Osamu Tsuboi, Masafumi Iwaki, Hisao Okuda, Hiromitsu Soneda, Satoshi Ueda, Ippei Sawaki
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Publication number: 20050277217Abstract: A method for manufacturing a micro-structural unit is provided. By the method, micro-machining is performed on a material substrate including first through third conductive layers and two insulating layers, one of which is interposed between the first and the second conductive layers, and the other between the second and the third conductive layers. The method includes several etching steps performed on the layers of the material substrate that are different in thickness.Type: ApplicationFiled: August 22, 2005Publication date: December 15, 2005Applicants: FUJITSU LIMITED, FUJITSU MEDIA DEVICES LIMITEDInventors: Norinao Kouma, Osamu Tsuboi, Hisao Okuda, Hiromitsu Soneda, Mi Xiaoyu, Satoshi Ueda, Ippei Sawaki, Yoshitaka Nakamura
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Patent number: 6969629Abstract: A method for manufacturing a micro-structural unit is provided. By the method, micro-machining is performed on a material substrate including first through third conductive layers and two insulating layers, one of which is interposed between the first and the second conductive layers, and the other between the second and the third conductive layers. The method includes several etching steps performed on the layers of the material substrate that are different in thickness.Type: GrantFiled: March 4, 2004Date of Patent: November 29, 2005Assignees: Fujitsu Limited, Fujitsu Media Devices LimitedInventors: Norinao Kouma, Osamu Tsuboi, Hisao Okuda, Hiromitsu Soneda, Mi Xiaoyu, Satoshi Ueda, Ippei Sawaki, Yoshitaka Nakamura
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Publication number: 20050231787Abstract: A micro-oscillation element includes a frame, a movable functional part, a driving mechanism, a beam extending from the functional part to the driving mechanism, and a torsion connector for connecting the frame and the beam to each other. The connector defines a rotational axis about which the functional part rotates. The rotational axis crosses the longitudinal direction of the beam. The beam is shorter than the functional part in the longitudinal direction of the rotational axis.Type: ApplicationFiled: August 26, 2004Publication date: October 20, 2005Applicants: FUJITSU LIMITED, FUJITSU MEDIA DEVICES LIMITEDInventors: Osamu Tsuboi, Norinao Kouma, Hisao Okuda, Hiromitsu Soneda, Satoshi Ueda, Ippei Sawaki, Yoshitaka Nakamura
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Patent number: 6946398Abstract: The method for fabricating a micro machine comprises the step of burying an oxide film 54 in a first semiconductor substrate 6, the step of bonding the first semiconductor substrate to the second semiconductor substrate with an insulation film 18 therebetween, the step of forming a first mask 66 with an opening in a first region and a second region on both sides of the first region, the step of etching the first semiconductor substrate with a first mask 66 and an oxide film 54 as a mask to thereby form a spring portion 20a integral with the first semiconductor substrate between the oxide film and the insulation film to thereby form a torsion bar including the spring portion, the step of forming a second mask 74 with an opening in the first region and the second region, the step of etching the second semiconductor substrate by using the second mask 74, and the step of etching the insulation film 18 in the first region and the second region. The thickness of the torsion bar can be easily controlled.Type: GrantFiled: August 29, 2003Date of Patent: September 20, 2005Assignee: Fujitsu LimitedInventors: Shoji Okuda, Hiroshi Tokunaga, Osamu Tsuboi
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Publication number: 20050200986Abstract: The micro-actuation element (X1) includes a movable unit (111), a frame (112) and a coupler (113) for connecting these, where the unit, the frame and the coupler are integrally formed in a material substrate having a multi-layer structure that consists of electroconductive layers (110a-110c), such as a core conduction layer (110b), and insulation layers (110d, 110e) intervening between the electroconductive layers (110a-110c). The movable unit (111) includes a first structure originating in the core conduction layer (110b). The frame (112) includes a second structure originating in the core conduction layer (110b). The coupler (113) includes a plurality of electrically separated torsion bars (113a, 113b) that originate in the core conduction layer (110b) and are connected continuously to the first structure and the second structure.Type: ApplicationFiled: April 8, 2005Publication date: September 15, 2005Applicants: FUJITSU LIMITED, FUJITSU MEDIA DEVICES LIMITEDInventors: Osamu Tsuboi, Yoshihiro Mizuno, Satoshi Ueda, Ippei Sawaki, Hisao Okuda, Fumio Yamagishi, Hiromitsu Soneda, Norinao Kouma
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Patent number: 6936510Abstract: A semiconductor memory device comprising: a first insulating film covering the upper and side surfaces of a gate electrode; a second insulating film formed on the substrate covering the first insulating film; a pair of contact holes formed through the second insulating film and reaching the impurity diffusion regions; a conductive plug embedded in one of the contact holes; a third insulating film formed on the second insulating film covering the conductive plug, and having a first aperture on the other contact hole; a bit line formed on the third insulating film and connected to the other impurity diffusion region through the first aperture and the other contact hole; a fourth insulating film covering the upper and side surfaces of the bit line; a second aperture formed through the third insulating film in alignment with the fourth insulating film covering the side surface of the bit line; a storage electrode formed to extend over the bit line, insulated from the bit line by the third and fourth insulating fiType: GrantFiled: March 17, 2003Date of Patent: August 30, 2005Assignee: Fujitsu LimitedInventors: Kazuo Itabashi, Osamu Tsuboi, Yuji Yokoyama, Kenichi Inoue, Koichi Hashimoto, Wataru Futo