Abstract: An exposure system according to an aspect of the present disclosure includes a laser apparatus that outputs pulsed laser light, an illuminating optical system that guides the pulsed laser light to a reticle, a reticle stage, and a processor that controls the output of the pulsed laser light from the laser apparatus and the movement of the reticle performed by the reticle stage. The reticle has a first region where a first pattern is disposed and a second region where a second pattern is disposed, and the first and second regions are each a region continuous in a scan width direction perpendicular to a scan direction of the pulsed laser light, with the first and second regions arranged side by side in the scan direction. The processor controls the laser apparatus to output the pulsed laser light according to each of the first and second regions by changing the values of control parameters of the pulsed laser light in accordance with each of the first and second regions.

Abstract: An exposure system according to an aspect of the present disclosure includes a laser apparatus emitting a pulse laser beam, an illumination optical system guiding the pulse laser beam to a reticle, a reticle stage moving the reticle, and a processor controlling emission of the pulse laser beam and movement of the reticle. The exposure system performs scanning exposure of a semiconductor substrate by irradiating the reticle with the pulse laser beam. The reticle has first and second regions. The processor instructs the laser apparatus about, based on proximity effect characteristics corresponding to the first and second regions, a value of a control parameter of the pulse laser beam corresponding to each region so that the laser apparatus emits the pulse laser beam with which a difference of the proximity effect characteristic of each region from a reference proximity effect characteristic is in an allowable range.

Abstract: An exposure system that performs scanning exposure of a semiconductor substrate by irradiating a reticle with a pulse laser beam includes a laser apparatus configured to emit a pulse laser beam, an illumination optical system through which the pulse laser beam is guided to the reticle, a reticle stage, and a processor configured to control emission of the pulse laser beam from the laser apparatus and movement of the reticle by the reticle stage. The reticle includes a region in which multiple kinds of patterns are arranged in a mixed manner in a scanning width direction orthogonal to a scanning direction of the scanning exposure. The processor instructs the laser apparatus about a target wavelength such that the laser apparatus emits the pulse laser beam of a wavelength with which dispersion of best focus positions corresponding to respective patterns of the multiple kinds of patterns is minimum.

Abstract: A laser apparatus according to the present disclosure includes: a laser output unit configured to perform laser oscillation; and a control unit configured to acquire first laser performance data obtained when the laser output unit performs laser oscillation based on a first laser control parameter, and second laser performance data obtained when the laser output unit performs laser oscillation based on a second laser control parameter, while laser output from the laser output unit to an external device is stopped, and determine whether the second laser performance data has been improved as compared to the first laser performance data.

Abstract: A pulse width expansion apparatus according to an aspect of the present disclosure includes a polarization beam splitter and a transfer optical system. The transfer optical system includes ¼-wavelength and reflection mirror pairs. The ¼-wavelength mirror pair include first and second ¼-wavelength mirrors. The first ¼-wavelength mirror provides ¼-wavelength phase shift and reflects a pulse laser beam. The second ¼-wavelength mirror provides ¼-wavelength phase shift and reflects the pulse laser beam reflected by the first ¼-wavelength mirror. The reflection mirror pair are disposed on an optical path before and after or between the ¼-wavelength mirror pair. The transfer optical system transfers an image of an input pulse laser beam on the polarization beam splitter to the optical path between the ¼-wavelength mirror pair at one-to-one magnification as a first transfer image and transfers the first transfer image to the polarization beam splitter at one-to-one magnification as a second transfer image.

Abstract: A system for generating extreme ultraviolet light, in which a target material inside a chamber is irradiated with a laser beam to be turned into plasma, includes a first laser apparatus configured to output a first laser beam, a second laser apparatus configured to output a pedestal and a second laser beam, and a controller connected to the first and second laser apparatuses and configured to cause the first laser beam to be outputted first, the pedestal to be outputted after the first laser beam, and the second laser beam having higher energy than the pedestal to be outputted after the pedestal.

Abstract: A laser processing system includes: a wavelength-variable laser device configured to output each of a laser beam at an absorption line as a wavelength at which light is absorbed by oxygen and a laser beam at a non-absorption line as a wavelength at which the amount of light absorption by oxygen is smaller than at the absorption line; an optical system configured to irradiate a workpiece with the laser beam; and a laser control unit configured to control the wavelength-variable laser device, set the wavelength of the laser beam output from the wavelength-variable laser device to be the non-absorption line when laser processing is performed on the surface of the workpiece in gas containing oxygen, and set the wavelength of the laser beam output from the wavelength-variable laser device to be the absorption line when ozone cleaning is performed on the surface of the workpiece in gas containing oxygen.

Abstract: A laser apparatus includes: (A) a solid-state laser apparatus that outputs burst seed pulsed light containing a plurality of pulses; (B) an excimer amplifier that amplifies the burst seed pulsed light in a discharge space in a single occurrence of discharge and outputs the amplified light as amplified burst pulsed light; (C) an energy sensor that measures the energy of the amplified burst pulsed light; and (D) a laser controller that corrects the timing at which the solid-state laser apparatus is caused to output the burst seed pulsed light based on the relationship of the difference between the timing at which the solid-state laser apparatus outputs the burst seed pulsed light and the timing at which the discharge occurs in the discharge space with a measured value of the energy.

Abstract: A laser gas regenerating apparatus regenerates a discharged gas discharged from at least one ArF excimer laser apparatus and supplies the regenerated gas to the at least one ArF excimer laser apparatus connected to a first laser gas supply source that supplies a first laser gas and to a second laser gas supply source that supplies a second laser gas. The laser gas regenerating apparatus includes a data obtaining unit that obtains data on a supply amount of the second laser gas supplied to the at least one ArF excimer laser apparatus; a xenon adding unit that adds, to the regenerated gas, a third laser gas; and a control unit that controls, based on the supply amount, an addition amount of the third laser gas by the xenon adding unit.

Abstract: A data analyzer includes a data collector that acquires data on each analysis target parameter of each of a plurality of apparatuses from the apparatus, the plurality of apparatuses including a light source apparatus, an exposure apparatus that exposes a wafer to pulsed light outputted from the light source apparatus, and a wafer inspection apparatus that inspects the exposed wafer, an image generator that visualizes the data on each of the parameters collected by the data collector from the apparatuses that process the wafer for each predetermined area of the wafer to convert the data into an image and generates a plurality of mapped images for each of the parameters of the apparatuses, and a correlation computing section that performs pattern matching on arbitrary ones of the mapped images generated from the wafer to determine a correlation value between arbitrary ones of the parameters of the apparatuses.

Abstract: A maintenance management method for a lithography system according to a viewpoint of the present disclosure includes organizing and saving operating information for each of lithography cells that are each an apparatus group formed of a set of apparatuses and form the lithography system, organizing and saving maintenance information on consumables for each of the lithography cells, calculating a standard maintenance timing for each of the consumables for each of the lithography cells based on the operating information and the maintenance information on the consumable for each of the lithography cells, creating a maintenance schedule plan for each of the lithography cells or for each of manufacturing lines based on the standard maintenance timing, information on a downtime, and information on a loss cost due to the downtime for each of the lithography cells or for each of the manufacturing lines, and outputting the result of the creation of the maintenance schedule plan.

Abstract: A wavelength converter including: A. a crystal holder configured to hold a nonlinear crystal configured to convert a wavelength of a laser beam incident thereon and output the wavelength-converted laser beam; B. a first container configured to accommodate the crystal holder and include a light incident window so provided as to intersect an optical path of the laser beam incident on the nonlinear crystal and a light exiting window so provided as to intersect the optical path of the laser beam having exited out of the nonlinear crystal; C. a second container configured to accommodate the first container; D. a position adjusting mechanism configured to adjust at least a position of the first container; and E. an isolation mechanism configured to spatially isolate the light incident window and the light exiting window from the position adjusting mechanism.

Abstract: A laser apparatus including an optical element made of a CaF2 crystal and configured to transmit an ultraviolet laser beam obliquely incident on one surface of the optical element, the electric field axis of the P-polarized component of the laser beam propagating through the optical element coinciding with one axis contained in <111> of the CaF2 crystal, with the P-polarized component defined with respect to the one surface. A method for manufacturing an optical element, the method including causing a seed CaF2 crystal to undergo crystal growth along one axis contained in <111> to form an ingot, setting a cutting axis to be an axis inclining by an angle within 14.18±5° with respect to the crystal growth direction toward the direction of another axis contained in <111>, which differs from the crystal growth direction, and cutting the ingot along a plane perpendicular to the cutting axis.

Abstract: A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ?Zsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 ?m to 150 ?m inclusive at the transfer position.

Abstract: A laser system includes: A. a solid-state laser apparatus configured to output a pulse laser beam having light intensity distribution in a Gaussian shape that is rotationally symmetric about an optical path axis; B. an amplifier including a pair of discharge electrodes and configured to amplify the pulse laser beam in a discharge space between the pair of discharge electrodes; and C. a conversion optical system configured to convert the light intensity distribution of the pulse laser beam output from the amplifier into a top hat shape in each of a discharge direction of the pair of discharge electrodes and a direction orthogonal to the discharge direction.

Abstract: A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ?Zsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 ?m to 150 ?m inclusive at the transfer position.

Abstract: A gas laser apparatus may include a chamber filled with a laser gas; a window provided in the chamber and through which a laser beam passes; an optical path tube connected to the chamber to surround a position of the window in the chamber; a heated gas supply port configured to supply a heated purge gas into a closed space including a space in the optical path tube; and an exhaust port configured to exhaust a gas in the closed space.

Abstract: A method for manufacturing a semiconductor crystalline thin film according to a viewpoint of the present disclosure includes radiating first pulsed laser light having a first pulse duration to an amorphous semiconductor to poly-crystallize the amorphous semiconductor and radiating second pulsed laser light having a second pulse duration shorter than the first pulse duration to an area of a semiconductor crystal having undergone the poly-crystallization to lower the height of ridges of the semiconductor crystal.

Abstract: A gas laser apparatus includes: a magnetic bearing including an electromagnet capable of controlling a magnetic force, and configured to rotatably support a rotary shaft of a fan in a magnetically levitated state by the magnetic force, the fan being configured to supply a laser gas; an electromagnet control unit configured to control the magnetic force of the electromagnet based on displacement of a levitated position of the rotary shaft and adjust the levitated position; a motor configured to generate torque for rotating the fan; a magnetic coupling configured to couple the rotary shaft and a drive shaft of a motor with a magnetic attractive force and transmit the torque of the motor to the rotary shaft; an attractive force estimating sensor configured to detect a parameter that enables an attractive force of the magnetic coupling to be estimated; an attractive force measuring unit configured to measure the attractive force of the magnetic coupling based on the detected parameter; and a correction unit confi

Abstract: A machine learning method according to a viewpoint of the present disclosure is a machine learning method for creating a learning model configured to estimate the life of a consumable of a laser apparatus, the method including acquiring first life-related information containing data on a parameter relating to the life of the consumable, the data recorded in correspondence with different numbers of oscillation pulses during a period from the start of use of the consumable to replacement thereof, dividing the first life-related information into a plurality of levels each representing the degree of degradation of the consumable in accordance with the numbers of oscillation pulses to create training data, creating the learning model by performing machine learning using the created training data, and saving the created learning model.