Patents by Inventor Oscar M. K. Law
Oscar M. K. Law has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9559003Abstract: A system and method for making semiconductor die connections with through-substrate vias are disclosed. Through substrate vias are formed through the substrate to allow for signal connections as well as power and ground connections. In one embodiment the substrate has an interior region and a periphery region surrounding the interior region. A first set of through substrate vias are located within the periphery region, and a second set of through substrate vias are located within the interior region, wherein the second set of through substrate vias are part of a power matrix. The second set of through substrate vias bisect the substrate into a first part and a second part.Type: GrantFiled: August 17, 2015Date of Patent: January 31, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Oscar M. K. Law, Kuo H. Wu
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Publication number: 20150357240Abstract: A system and method for making semiconductor die connections with through-substrate vias are disclosed. Through substrate vias are formed through the substrate to allow for signal connections as well as power and ground connections. In one embodiment the substrate has an interior region and a periphery region surrounding the interior region. A first set of through substrate vias are located within the periphery region, and a second set of through substrate vias are located within the interior region, wherein the second set of through substrate vias are part of a power matrix. The second set of through substrate vias bisect the substrate into a first part and a second part.Type: ApplicationFiled: August 17, 2015Publication date: December 10, 2015Inventors: Oscar M. K. Law, Kuo H. Wu
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Patent number: 9111936Abstract: A system and method for making semiconductor die connections with through-substrate vias are disclosed. Through substrate vias are formed through the substrate to allow for signal connections as well as power and ground connections. In one embodiment the substrate has an interior region and a periphery region surrounding the interior region. A first set of through substrate vias are located within the periphery region, and a second set of through substrate vias are located within the interior region, wherein the second set of through substrate vias are part of a power matrix. The second set of through substrate vias bisect the substrate into a first part and a second part.Type: GrantFiled: May 29, 2014Date of Patent: August 18, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Oscar M. K. Law, Kuo H. Wu
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Patent number: 9099540Abstract: A system and method for making semiconductor die connections with through-silicon vias (TSVs) are disclosed. A semiconductor die is manufactured with both via-first TSVs as well as via-last TSVs in order to establish low resistance paths for die connections between adjacent dies as well as for providing a low resistance path for feedthrough channels between multiple dies.Type: GrantFiled: April 16, 2013Date of Patent: August 4, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Oscar M. K. Law, Kuo H. Wu
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Publication number: 20140264941Abstract: A system and method for making semiconductor die connections with through-substrate vias are disclosed. Through substrate vias are formed through the substrate to allow for signal connections as well as power and ground connections. In one embodiment the substrate has an interior region and a periphery region surrounding the interior region. A first set of through substrate vias are located within the periphery region, and a second set of through substrate vias are located within the interior region, wherein the second set of through substrate vias are part of a power matrix. The second set of through substrate vias bisect the substrate into a first part and a second part.Type: ApplicationFiled: May 29, 2014Publication date: September 18, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Oscar M. K. Law, Kuo H. Wu
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Patent number: 8753939Abstract: A system and method for making semiconductor die connections with through-silicon vias (TSVs) are disclosed. TSVs are formed through the substrate to allow for signal connections as well as power and ground connections. In one embodiment this allows these connections to be made throughout the substrate instead of on the periphery of the substrate. In another embodiment, the TSVs are used as part of a power matrix to supply power and ground connections to the active devices and metallization layers through the substrate.Type: GrantFiled: August 2, 2013Date of Patent: June 17, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Oscar M. K. Law, Kuo H. Wu
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Patent number: 8674510Abstract: A three dimensional (3D) integrated circuit (IC) structure having improved power and thermal management is described. The 3D IC structure includes at least first and second dies. Each of the first and second dies has at least one power through silicon via (TSV) and one signal TSV. The at least one power and signal TSVs of the first die are connected to the at least one power and signal TSVs of the second die, respectively. The 3D IC structure also includes one or more peripheral TSV structures disposed adjacent to one or more sides of the first and/or the second die. The peripheral TSV structures supply at least power and/or signals.Type: GrantFiled: July 29, 2010Date of Patent: March 18, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Oscar M. K. Law, Kuo H. Wu
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Publication number: 20130316530Abstract: A system and method for making semiconductor die connections with through-silicon vias (TSVs) are disclosed. TSVs are formed through the substrate to allow for signal connections as well as power and ground connections. In one embodiment this allows these connections to be made throughout the substrate instead of on the periphery of the substrate. In another embodiment, the TSVs are used as part of a power matrix to supply power and ground connections to the active devices and metallization layers through the substrate.Type: ApplicationFiled: August 2, 2013Publication date: November 28, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Oscar M.K. Law, Kuo H. Wu
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Patent number: 8589847Abstract: A programmable transistor array circuit is disclosed comprising a semiconductor substrate; and a plurality of basic transistor units (BTUs) arranged in rows and columns of uniformly spaced cells, the BTUs further comprising PMOS transistor units (PTUs), NMOS transistor units (NTUs) and dummy transistor units (DTUs) each BTU having conductors arranged in a single direction running through the BTUs and the conductors being uniformly spaced with respect to each other. The arrangement of the BTUs is subject to restricted design rules. Logical transistor units (LTUs) are formed from the BTUs using first and second layers of metallization. Additional embodiments are disclosed incorporating the programmable transistor array circuit.Type: GrantFiled: November 12, 2012Date of Patent: November 19, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Oscar M. K. Law, Kuo H. Wu
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Patent number: 8552563Abstract: A system and method for making semiconductor die connections with through-silicon vias (TSVs) are disclosed. TSVs are formed through the substrate to allow for signal connections as well as power and ground connections. In one embodiment this allows these connections to be made throughout the substrate instead of on the periphery of the substrate. In another embodiment, the TSVs are used as part of a power matrix to supply power and ground connections to the active devices and metallization layers through the substrate.Type: GrantFiled: January 6, 2010Date of Patent: October 8, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Oscar M. K. Law, Kuo H. Wu
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Patent number: 8549460Abstract: An integrated circuit structure includes a chip including a substrate and a power distribution network. The power distribution network includes a plurality of power through-silicon vias (TSVs) penetrating the substrate, wherein the plurality of power TSVs forms a grid; and a plurality of metal lines in a bottom metallization layer (M1), wherein the plurality of metal lines couples the plurality of power TSVs to integrated circuit devices on the substrate.Type: GrantFiled: July 26, 2012Date of Patent: October 1, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Oscar M. K. Law, Kuo H. Wu, Wei-Chih Yeh
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Patent number: 8487444Abstract: A system and method for making semiconductor die connections with through-silicon vias (TSVs) are disclosed. A semiconductor die is manufactured with both via-first TSVs as well as via-last TSVs in order to establish low resistance paths for die connections between adjacent dies as well as for providing a low resistance path for feedthrough channels between multiple dies.Type: GrantFiled: December 4, 2009Date of Patent: July 16, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Oscar M. K. Law, Kuo H. Wu
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Patent number: 8332794Abstract: A programmable transistor array circuit is disclosed comprising a semiconductor substrate; and a plurality of basic transistor units (BTUs) arranged in rows and columns of uniformly spaced cells, the BTUs further comprising PMOS transistor units (PTUs), NMOS transistor units (NTUs) and dummy transistor units (DTUs) each BTU having conductors arranged in a single direction running through the BTUs and the conductors being uniformly spaced with respect to each other. The arrangement of the BTUs is subject to restricted design rules. Logical transistor units (LTUs) are formed from the BTUs using first and second layers of metallization. Methods for producing integrated circuits are disclosed forming programmable transistor arrays and implementing customer specified system designs upon the programmable transistor arrays.Type: GrantFiled: October 23, 2009Date of Patent: December 11, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Oscar M. K. Law, Kuo H. Wu
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Patent number: 8314635Abstract: A method of designing integrated circuits includes providing a first chip and a second chip identical to each other. Each of the first chip and the second chip includes a base layer including a Logic Transistor Unit (LTU) array. The LTU array includes LTUs identical to each other and arranged in rows and columns. The method further includes connecting the base layer of the first chip to form a first application chip; and connecting the base layer of the second chip to form a second application chip different from the first application chip.Type: GrantFiled: November 12, 2009Date of Patent: November 20, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Oscar M. K. Law, Kuo H. Wu
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Publication number: 20120290996Abstract: An integrated circuit structure includes a chip including a substrate and a power distribution network. The power distribution network includes a plurality of power through-silicon vias (TSVs) penetrating the substrate, wherein the plurality of power TSVs forms a grid; and a plurality of metal lines in a bottom metallization layer (M1), wherein the plurality of metal lines couples the plurality of power TSVs to integrated circuit devices on the substrate.Type: ApplicationFiled: July 26, 2012Publication date: November 15, 2012Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Oscar M. K. Law, Kuo H. Wu, Wei-Chih Yeh
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Patent number: 8264067Abstract: A through silicon via architecture for integrated circuits is provided. The integrated circuit (IC) includes a substrate with a top surface and a bottom surface with circuitry formed on the top surface, a plurality of bonding pads formed along a periphery of the bottom surface, and a backside metal layer (BML) formed on the bottom surface and electrically coupled to a second subset of bonding pads in the plurality of bonding pads. A first subset of bonding pads in the plurality of bonding pads is electrically coupled to circuitry on the top surface with through silicon vias (TSV). The BML distributes electrical signals provided by the second subset of bonding pads.Type: GrantFiled: July 16, 2010Date of Patent: September 11, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Oscar M. K. Law, Kuo H. Wu, Wei-Chih Yeh
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Patent number: 8247906Abstract: An integrated circuit structure includes a chip including a substrate and a power distribution network. The power distribution network includes a plurality of power through-silicon vias (TSVs) penetrating the substrate, wherein the plurality of power TSVs forms a grid; and a plurality of metal lines in a bottom metallization layer (M1), wherein the plurality of metal lines couples the plurality of power TSVs to integrated circuit devices on the substrate.Type: GrantFiled: April 28, 2010Date of Patent: August 21, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Oscar M. K. Law, Kuo H. Wu, Wei-Chih Yeh
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Patent number: 8173491Abstract: Structures and methods for standard cell layouts having variable rules for spacing of layers to cell boundaries are disclosed. In one embodiment, a first standard cell layout is provided with a conductive layer having at least two portions spaced apart by a minimum spacing distance, the conductive layer having at least one portion spaced from a cell boundary by a first spacing distance of less than half of the minimum spacing distance; a second standard cell disposed adjacent the first standard cell with at least one second portion of the conductive layer in the second cell disposed adjacent the first portion in the first standard cell and spaced apart from a common cell boundary by a second spacing greater than half of the minimum; wherein the sum of the first and second spacings is at least as great as the minimum spacing. A method for forming standard is disclosed.Type: GrantFiled: March 29, 2011Date of Patent: May 8, 2012Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Oscar M. K. Law, Manoj Achyutrao Joshi, Kong-Beng Thei, Harry Chuang
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Patent number: 8120086Abstract: An integrated circuit structure includes a semiconductor substrate including a first region and a second region; an insulation region in the second region of the semiconductor substrate; and an inter-layer dielectric (ILD) over the insulation region. A transistor is in the first region. The transistor includes a gate dielectric and a gate electrode over the gate dielectric. A first conductive line and a second conductive line are over the insulation region. The first conductive line and the second conductive line are substantially parallel to each other and extending in a first direction. A first metal line and a second metal line are in a bottom metal layer (M1) and extending in the first direction. The first metal line and the second metal line substantially vertically overlap the first conductive line and the second conductive line, respectively. The first metal line and the second metal line form two capacitor electrodes of a capacitor.Type: GrantFiled: December 9, 2008Date of Patent: February 21, 2012Assignee: Taiwan Semiconductor Manufacturing Co., LtdInventors: Oscar M. K. Law, Kong-Beng Thei, Harry Chuang
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Publication number: 20120025388Abstract: A three dimensional (3D) integrated circuit (IC) structure having improved power and thermal management is described. The 3D IC structure includes at least first and second dies. Each of the first and second dies has at least one power through silicon via (TSV) and one signal TSV. The at least one power and signal TSVs of the first die are connected to the at least one power and signal TSVs of the second die, respectively. The 3D IC structure also includes one or more peripheral TSV structures disposed adjacent to one or more sides of the first and/or the second die. The peripheral TSV structures supply at least power and/or signals.Type: ApplicationFiled: July 29, 2010Publication date: February 2, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Oscar M. K. LAW, Kuo H. WU