Abstract: A method for electrolysis-ozone-corrosion inhibitor/electrolysis-ozone-hydrogen peroxide-corrosion inhibitor coupling treatment on toxic and refractory wastewater includes the following steps: adding toxic and refractory wastewater to be treated into a wastewater treatment reaction tank equipped with a plate anode and a plate cathode, and starting a direct current (DC) power supply connected to the plate anode and the plate cathode to treat the toxic and refractory wastewater at an appropriate current density under stirring, during which a corrosion inhibitor and hydrogen peroxide are added to the toxic and refractory wastewater to be treated and ozone is introduced into the toxic and refractory wastewater to be treated through an aeration device. The method can increase the production rate and production quantity of free radicals in a reaction system, effectively improve the treatment efficiency for toxic and refractory wastewater, and reduce the treatment cost.

Abstract: A control method for an autonomous driving vehicle is provided. The method includes: obtaining perception information of road conditions around a vehicle; determining a first control decision based on the perception information and autonomous driving decision logic; controlling the vehicle to perform autonomous driving according to the first control decision; determining, in response to detecting an assisted driving instruction, a second control decision that is different from the first control decision based on the perception information, the autonomous driving decision logic, and the assisted driving instruction; and controlling the vehicle to perform autonomous driving according to the second control decision.

Abstract: A method includes forming a fin on a substrate, forming an insulating material over the fin, recessing the insulating material to form an isolation region surrounding the fin, wherein an upper portion of the fin protrudes above the isolation region, performing a trimming process to reduce a width of the upper portion of the fin, and forming a gate structure extending over the isolation region and the upper portion of the fin.

Abstract: A full-ocean-depth fidelity enzymological measurement device for microbial extracellular enzyme is provided, comprising a pressure-maintaining sampling bottle, pressure-maintaining transfer equipment, a pressure-maintaining enzymological reactor, and heat preservation equipment and enzyme activity detection equipment. The pressure-maintaining enzymological reactor comprises a barrel body, a plug, polytetrafluoroethylene gaskets, an O-ring, a piston, a high-pressure straight-through valve, and a high-pressure connector. The pressure-maintaining enzymological reactor is in a closed barrel body shape and is internally provided with the piston, and the plug and the valve are arranged at each of two ends of the pressure-maintaining enzymological reactor; and the valve is connected to the pressure-maintaining transfer equipment through the high-pressure connector.

Abstract: A package structure includes a circuit substrate, a semiconductor package, a lid structure, a passive device and a barrier structure. The semiconductor package is disposed on and electrically connected to the circuit substrate. The lid structure is disposed on the circuit substrate covering the semiconductor package. The lid structure is attached to the circuit substrate through an adhesive material. The passive device is disposed on the circuit substrate in between the semiconductor package and the lid structure. The barrier structure is separating the passive device from the lid structure and the adhesive material, and the barrier structure is in contact with the adhesive material.

Abstract: A method includes forming a plurality of dielectric layers, which processes include forming a first plurality of dielectric layers having first thicknesses, and forming a second plurality of dielectric layers having second thicknesses smaller than the first thicknesses. The first plurality of dielectric layers and the second plurality of dielectric layers are laid out alternatingly. The method further includes forming a plurality of redistribution lines connected to form a conductive path, which processes include forming a first plurality of redistribution lines, each being in one of the first plurality of dielectric layers, and forming a second plurality of redistribution lines, each being in one of the second plurality of dielectric layers.

Abstract: Presented are systems and methods for enhancing the reliability of uplink transmissions. A wireless communication device may receive a scheduling grant of an uplink channel from a wireless communication node. The wireless communication device may transmit the uplink channel to the wireless communication node. The wireless communication device may transmit a transmission block indication for determining a transmission block size (TBS) of the uplink channel to the wireless communication node.

Abstract: A method for producing and purifying sodium bromide using the coke from waste circuit boards pyrolysis residues as reducing agent, belonging to the field of purifying sodium bromide and high-value utilization, and more particularly, relating to a method for reducing and purifying crude bromine salt obtained from waste circuit boards smelting ash by using the coke in waste circuit boards pyrolysis residues. The main steps are as follows: carbonization conversion, water dissolution, filtration, and concentrated crystallization under vacuum heating. The pure sodium bromide was obtained by reducing crude bromine salt enriched from waste circuit board smelting ash by using the coke in waste circuit boards pyrolysis residues, realizing the resource coupling and high-value utilization of the two wastes, avoiding the secondary pollution in the process of recycling the waste circuit boards. It has the characteristics of simple operation, high resource utilization rate and no tail liquid discharge.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a fin structure formed over a substrate, and a hard mask layer formed over the fin structure. The semiconductor device structure also includes a gate structure formed surrounding the hard mask layer and the fin structure, and a portion of the gate structure is interposed between the fin structure and the hard mask layer. The semiconductor device structure further includes a source/drain (S/D) structure formed adjacent to the gate structure.

Abstract: A package structure includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, a heat dissipation element and conductive balls. The insulating encapsulant is encapsulating the semiconductor die, and has a first surface and a second surface opposite to the first surface. The first redistribution layer is located on the first surface of the insulating encapsulant and includes at least one feed line and one ground plate. The second redistribution layer is located on the second surface of the insulating encapsulant and electrically connected to the semiconductor die and the first redistribution layer. The heat dissipation element is disposed on the first redistribution layer and includes a conductive base and antenna patterns, wherein the antenna patterns is electrically connected to the feed line and is electrically coupled to the ground plate of the first redistribution layer.

Abstract: An integrated circuit structure includes a substrate, a transistor, a first dielectric layer, a metal contact, a first low-k dielectric layer, a second dielectric layer, and a first metal feature. The transistor is over the substrate. The first dielectric layer is over the transistor. The metal contact is in the first dielectric layer and electrically connected to the transistor. The first low-k dielectric layer is over the first dielectric layer. The second dielectric layer is over the first low-k dielectric layer and has a dielectric constant higher than a dielectric constant of the first low-k dielectric layer. The first metal feature extends through both second dielectric layer and the first low-k dielectric layer to the metal contact.

Abstract: Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.

Abstract: A system and a method identify an adverse geological body in a tunnel based on hyperspectral technology analysis. The system includes a wall-climbing robot, a controller, and a signal processor, wherein the wall-climbing robot is provided with a plurality of groups of hyperspectral light sources and receivers, and the hyperspectral light sources and the receivers are arranged at intervals; the controller is configured to control the operation of the wall-climbing robot to ensure that the wall-climbing robot moves on a tunnel face according to a set spiral path; and the signal processor communicates with the receivers to receive the acquired spectrum data, draws a mineral distribution map of the tunnel face with the path raveled by the wall-climbing robot as a plane, and identifies an adverse geological body by identifying categories and distribution characteristics of the representative minerals.

Abstract: A method and device are disclosed from the perspective of a first User Equipment (UE) to establish one-to-one connection between the first UE and a second UE. In one embodiment, the method includes the first UE initiating a first procedure of establishing the one-to-one connection with the second UE for a unicast communication between the first UE and the second UE or for a UE-to-UE communication between the first UE and a third UE via the second UE or a second procedure of establishing the one-to-one connection with the second UE for a UE-to-Network communication between the first UE and a network node via the second UE.

Abstract: A method of combining different materials to produce the polymer In this polymer X1, X2, X3, and X4 are independently selected from the group consisting of: F, Cl, H, and combinations thereof. Additionally, in this polymer R15, R16, R17, and R18 are independently selected from the group consisting of: F, Cl, H, and combinations thereof. Finally, in this polymer R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from unsubstituted branched alkyls with 1 to 60 carbon atoms unsubstituted or substituted branched alkyls with 1 to 60 carbon atoms and unsubstituted or substituted linear alkyls with 1 to 60 carbon atoms.

Abstract: An isolated antigen-binding protein, having one or more of the following properties: 1) capable of binding to human and monkey-derived GITR proteins at a KD value of 7×10?12 or below, wherein the KD value is measured by BLI method; 2) capable of stimulating immune cell proliferation; 3) capable of stimulating immune cells to secrete IFN-?, wherein the secretion is measured in T cell viability assay; 4) capable of inhibiting tumor growth and/or tumor cell proliferation; 5) capable of activating GITR signaling pathway; 6) capable of inhibiting the binding of GITR to GITRL.

Abstract: Provided is a display substrate, including: a substrate, and multiple light-emitting units and multiple light-detecting units located on a substrate. At least one light-emitting unit includes a light-emitting element and a pixel driving circuit coupled with the light-emitting element, and at least one light-detecting unit includes an optical sensing element and a light-emitting detection circuit coupled with an optical sensing element; an optical sensing element is located on one side of a light-emitting detection circuit and a pixel driving circuit away from a substrate and between a light-emitting element and a substrate; the light-emitting element emits light from a side away from the substrate, and a light transmittance region is provided on one side of the light-emitting element facing the optical sensing element.

Abstract: In an embodiment, a device includes: a package component including integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure over the encapsulant and the integrated circuit dies, and sockets over the redistribution structure; a mechanical brace physically coupled to the sockets, the mechanical brace having openings, each one of the openings exposing a respective one of the sockets; a thermal module physically and thermally coupled to the encapsulant and the integrated circuit dies; and bolts extending through the thermal module, the mechanical brace, and the package component.

Abstract: A semiconductor device includes a fin structure disposed over a substrate. The semiconductor device includes a first interfacial layer straddling the fin structure. The semiconductor device includes a gate dielectric layer extending along sidewalls of the fin structure. The semiconductor device includes a second interfacial layer overlaying a top surface of the fin structure. The semiconductor device includes a gate structure straddling the fin structure. The first interfacial layer and the gate dielectric layer are disposed between the sidewalls of the fin structure and the gate structure.

Abstract: Methods and systems for crystallizing a thin film provide a laser beam spot that is continually advanced across tire thin film to create a sustained complete or partial molten zone that is translated across the thin film, and crystallizes to form uniform, small-grained crystalline structures or grains.