Abstract: A Silicon Carbide (SiC) Gate Turn-Off (GTO) thyristor is formed of a substrate having at least three epi-layers provided thereon as first, second and third doped regions, respectively, and the substrate being a fourth doped region, wherein the at least four doped regions alternate between a p-type doping and an n-type doping, with the regions being at least partially overlaid. An anode is arranged on the first region, and a base is arranged on the second region. A controlling gate is arranged on the third region, and a cathode is arranged on the fourth region. A current divider divides the load current between the anode and the base. This reduces the voltage drop of a portion of the load current passing through the thyristor, allowing for the switching of higher current densities than in prior art thyristors, faster switching speeds and reduced junction temperatures.

Abstract: A gate turn-off thyristor includes a substrate formed of n-type silicon carbide; a growth buffer formed of n-type silicon carbide and positioned to overlie said substrate; a field buffer region formed of p-type silicon carbide and positioned to overlie said growth buffer; a drift region formed of p-type silicon carbide and positioned to overlie said field buffer region; a gated base region formed of n-type silicon carbide and positioned to overlie said drift region; a modified anode region formed of first, second and third layers of silicon carbide and positioned to overlie said gated base region, said first layer comprising p-type silicon carbide and disposed adjacent said gated base region, said second layer comprising n-type silicon carbide and disposed adjacent said first layer, said third layer comprising p-type silicon carbide and disposed adjacent said second layer; an anode contact disposed on said third layer of said modified anode region; a cathode contact disposed on said substrate; and a gate cont

Abstract: A high speed, compact and reliable semiconductor device for spatially switching light in optical switching networks, optical computers and optical interconnection networks is provided. The semiconductor device for spatially switching light comprises stacked P-anode, inner n-base, inner p-base and cathode layers, with an anode cathode on the P-anode layer defining a ridge. A low reverse bias is provided by a biasing means connected to a gate electrode disposed on a ledge of one base layer. A light emission region on the gate electrode side emits light, and a current flow induces a transversely flowing, narrow, light emitting channel that can be spatially shifted by switching the single gate electrode's bias. A high reverse bias also provides a spatially shifted light emission region in another part of the device's face.

Abstract: A method of distributing a plurality of data files to a plurality of recipients including the steps of: placing encrypted copies of the data files to be distributed on a plurality of identical media and providing the recipients with media reading devices having data file decryption capability; logically arranging the data files into data file groups; in response to a recipient's request for access to selected file groups providing the recipient with a group access map indicative of the file groups to which access is requested; in further response to a recipient's request for access to selected file groups providing the recipient with a password to be used for access verification; completing an access verification operation using the group access map and the password and data indicative of the media being read and data indicative of the reading device being used; providing access to the data files in the file groups to which access is requested by use of the group access map; and decrypting the accessed data f