Abstract: The present invention relates to process for the preparation of cannabidiol (A) from the coupling of (D) and (E) through the intermediates (C) and (D) starting from compound (B). The invention further relates to the novel compounds (B), (C), (D) and (E) and reagents used in this process. More specifically, this invention provides the manufacturing of Cannabidiol (A) in milligram to gram or kilogram scale.

Abstract: Provided herein is a method of determining an adjustment for the lens of a camera comprising: determining if liquid lens hardware is present; in accordance with determining that liquid lens hardware is present, commanding an initial voltage for the liquid lens hardware; setting a high threshold focus metric; the camera capturing an image frame and converting the image frame to data; calculating a focus metric of the image frame data and comparing the image frame data focus metric to the high threshold focus metric; and in accordance with the image frame data focus metric being higher than the high threshold focus metric, commanding a change in voltage to be delivered to the liquid lens hardware.

Abstract: Vehicle systems and methods are provided for monitoring symbology in a video stream associated with a software application. A method involves a programmable device identifying, within a first portion of a frame of a video stream, metadata identifying one or more characteristics of a symbol to be analyzed and corresponding indicia of an expected location of the symbol within a second portion of the frame, extracting a subset of pixels from the second portion of the frame encompassing the expected location, and providing the extracted subset of pixels from the second portion of the frame and the metadata from the first portion of the frame to a hardware symbol detector configurable to determine one or more metrics associated with the symbol based on the extracted subset of pixels and the metadata and provide the one or more metrics to the software application.

Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating insulative tiers and conductive tiers. Channel-material strings of memory-cell strings extend through the insulative and conductive tiers. Conductive vias are formed above and individually electrically coupled to individual of the channel-material strings. Insulating material is laterally-between immediately-adjacent of the conductive vias. At least some of the insulating material is vertically removed to form an upwardly-open void-space that is circumferentially about multiple of the conductive vias. Insulative material formed laterally-between the immediately-adjacent conductive vias to form a covered void-space from the upwardly-open void-space. Digitlines are formed above that are individually electrically coupled to a plurality of individual of the conductive vias there-below. Other embodiments, including structure independent of method, are disclosed.

Abstract: The disclosure herein describes platform-level checkpointing for deep learning (DL) jobs. The checkpointing is performed through capturing two kinds of state data: (i) GPU state (device state), and (ii) CPU state (host state). The GPU state includes GPU data (e.g., model parameters, optimizer state, etc.) that is located in the GPU and GPU context (e.g., the default stream in GPU, various handles created by the libraries such as DNN, Blas, etc.). Only a fraction of the GPU memory is copied because the checkpointing is done in a domain-aware manner. The “active” memory contains useful data like model parameters. To be able to capture the useful data, memory management is controlled to identify which parts of the memory are active. Also, to restore the destination GPU to the same context/state, a mechanism is used to capture such state-changing events on an original GPU and replayed on a destination GPU.

Abstract: A method of forming a microelectronic device comprises forming a stack structure comprising vertically alternating insulating structures and conductive structures arranged in tiers. Each of the tiers individually comprises one of the insulating structures and one of the conductive structures. A sacrificial material is formed over the stack structure and pillar structures are formed to extend vertically through the stack structure and the sacrificial material. The method comprises forming conductive plug structures within upper portions of the pillar structures, forming slots extending vertically through the stack structure and the sacrificial material, at least partially removing the sacrificial material to form openings horizontally interposed between the conductive plug structures, and forming a low-K dielectric material within the openings. Microelectronic devices, memory devices, and electronic systems are also described.

Abstract: Some embodiments include a ferroelectric transistor having an active region which includes a first source/drain region, a second source/drain region vertically offset from the first source/drain region, and a channel region between the first and second source/drain regions. A first conductive gate is operatively adjacent to the channel region of the active region. Insulative material is between the first conductive gate and the channel region. A second conductive gate is adjacent to the first conductive gate. Ferroelectric material is between the first and second conductive gates. Some embodiments include integrated memory. Some embodiments include methods of forming integrated assemblies.

Abstract: A surgical camera system comprising: a camera head including a housing; an image sensor within the housing; and the housing including a liquid lens therein for focusing an image received in the housing prior to transmission of the image to the image sensor, and a fixed solid lens adjacent the liquid lens.

Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating insulative tiers and conductive tiers. Channel-material strings of memory-cell strings extend through the insulative and conductive tiers. Conductive vias are formed above and individually electrically coupled to individual of the channel-material strings. Insulating material is laterally-between immediately-adjacent of the conductive vias. At least some of the insulating material is vertically removed to form an upwardly-open void-space that is circumferentially about multiple of the conductive vias. Insulative material is formed laterally-between the immediately-adjacent conductive vias to form a covered void-space from the upwardly-open void-space. Digitlines are formed above that are individually electrically coupled to a plurality of individual of the conductive vias there-below. Other embodiments, including structure independent of method, are disclosed.

Abstract: Methods, systems, and bitstream syntax are described for the fusion of latent features in multi-level, end-to-end, neural networks used in image and video compression. The fused architecture may be static or dynamic based on image characteristics (e.g., natural images versus screen content images) or other coding parameters, such as bitrate constrains or rate-distortion optimization. A variety of multi-level fusion architectures are discussed.

Abstract: Some embodiments include an integrated assembly having a supercapacitor supported by a semiconductor substrate. The supercapacitor includes first and second electrode bases. The first electrode base includes first laterally-projecting regions, and the second electrode base includes second laterally-projecting regions which are interdigitated with the first laterally-projecting regions. A distance between the first and second laterally-projecting regions is less than or equal to about 500 nm. Carbon nanotubes extend upwardly from the first and second electrode bases. The carbon nanotubes are configured as a first membrane structure associated with the first electrode base and as a second membrane structure associated with the second electrode base. Pseudocapacitive material is dispersed throughout the first and second membrane structures. Electrolyte material is within and between the first and second membrane structures. Some embodiments include methods of forming integrated assemblies.

Abstract: Some embodiments include a ferroelectric transistor having an active region which includes a first source/drain region, a second source/drain region vertically offset from the first source/drain region, and a channel region between the first and second source/drain regions. A first conductive gate is operatively adjacent to the channel region of the active region. Insulative material is between the first conductive gate and the channel region. A second conductive gate is adjacent to the first conductive gate. Ferroelectric material is between the first and second conductive gates. Some embodiments include integrated memory. Some embodiments include methods of forming integrated assemblies.

Abstract: Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a first conductive region; a second conductive region; a memory cell between the first and second conductive regions and including a first transistor including a first region coupled to the first and second conductive regions, and a charge storage structure separated from the first conduction region, and a second transistor including a second region coupled to the charge storage structure and the second conductive region; and a structure separated from the first region, the charge storage structure, and the second region by a dielectric structure, the structure forming part of a gate of the first transistor and the second transistor, and the structure including a first portion adjacent the dielectric structure, and a second portion adjacent the first portion, wherein the first portion includes a semiconductor material and the second portion includes a conductive material.

Abstract: A turbofan engine is provided. The turbofan engine includes a fan; a turbomachine operably coupled to the fan for driving the fan, wherein the turbomachine, the fan, or both include an engine component; a heat source; and a heat transfer system configured to reduce ice buildup or ice formation in the engine component, the heat transfer system in communication with the heat source, the heat transfer system comprising: a first heat transfer component in communication with the heat source; and a second heat transfer component that extends from the first heat transfer component to or through the engine component, wherein the first heat transfer component comprises one of a heat pipe or a graphene rod, and wherein the second heat transfer component comprises the other of the heat pipe or the graphene rod.

Abstract: Data is collected from a network graph, wherein the collected data is useful for training a machine learning model on a query domain. A domain-specific template corresponding to the query domain is received, the domain-specific template defining one or more classifiers to guide collection of content relevant to the query domain from the network graph. A collection starting point is analyzed based on the one or more classifiers of the domain-specific template to identify one or more relevant instances of the content. The one or more identified relevant instances of the content are added to a contextual protocol package. Each identified relevant instance of the content is analyzed based on the one or more classifiers of the domain-specific template to identify one or more additional relevant instances of the content. The one or more identified additional relevant instances of the content are added to the contextual protocol package.

Abstract: Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a first data line; a second data line adjacent the first data line and separated from the first data line by a first dielectric structure; and a memory cell formed over the first and second data lines. The memory cell includes a first transistor including a first channel region formed over and coupled to the first data line, and a charge storage structure separated from the first channel region; a second transistor including a second channel region formed over and coupled to the second data line, wherein the charge storage structure is formed over and coupled to the second channel region; and a second dielectric structure between the first channel region and each of the second channel region and the charge storage structure.

Abstract: A turbofan engine is provided. The turbofan engine includes a fan; a turbomachine operably coupled to the fan for driving the fan, wherein the turbomachine, the fan, or both include an engine component; a heat source; and a heat transfer system configured to reduce ice buildup or ice formation in the engine component, the heat transfer system in communication with the heat source, the heat transfer system comprising: a first heat transfer component in communication with the heat source; and a second heat transfer component that extends from the first heat transfer component to or through the engine component, wherein the first heat transfer component comprises one of a heat pipe or a graphene rod, and wherein the second heat transfer component comprises the other of the heat pipe or the graphene rod.

Abstract: Data is collected from a network graph, wherein the collected data is useful for training a machine learning model on a query domain. A domain-specific template corresponding to the query domain is received, the domain-specific template defining one or more classifiers to guide collection of content relevant to the query domain from the network graph. A collection starting point is analyzed based on the one or more classifiers of the domain-specific template to identify one or more relevant instances of the content. The one or more identified relevant instances of the content are added to a contextual protocol package. Each identified relevant instance of the content is analyzed based on the one or more classifiers of the domain-specific template to identify one or more additional relevant instances of the content. The one or more identified additional relevant instances of the content are added to the contextual protocol package.

Abstract: An electronic device comprises a stack comprising tiers of alternating conductive structures and insulative structures, and pillars vertically extending through the stack. The pillars comprise a tunnel dielectric material, a channel material, and an insulative material substantially surrounded by the channel material. The electronic device comprises a memory material horizontally adjacent to the conductive structures without being horizontally adjacent to the insulative structures. Related memory devices, systems, and methods of forming the electronic devices are also described.

Abstract: A method of forming a microelectronic device comprises forming a stack structure comprising vertically alternating insulating structures and conductive structures arranged in tiers. Each of the tiers individually comprises one of the insulating structures and one of the conductive structures. A sacrificial material is formed over the stack structure and pillar structures are formed to extend vertically through the stack structure and the sacrificial material. The method comprises forming conductive plug structures within upper portions of the pillar structures, forming slots extending vertically through the stack structure and the sacrificial material, at least partially removing the sacrificial material to form openings horizontally interposed between the conductive plug structures, and forming a low-K dielectric material within the openings. Microelectronic devices, memory devices, and electronic systems are also described.