Abstract: A CMOS light-to-current sensor built on silicon substrate is disclosed in this invention. This light-to-current sensor includes a photo-diode and two MOS transistors. The first MOS transistor is connected as the load transistor for the photo-generated current from the photo-diode, and the second MOS transistor is connected as the current-mirror transistor for the first transistor to output a current linearly proportional to the photo-generated current to the external resistor connected to the sensor.

Abstract: A single-linear color CIS image sensor chip built on silicon substrate is disclosed in this invention. This color image-sensing chip is realized by coating the RGB filters sequentially, in the order of RGBRGB . . . on each photo-detecting element of the sensor chip. A CIS scanner module incorporates these sensor chips as the image sensing array, and a fluorescent lamp as the light source will perform high speed, high quality color image scanning.

Abstract: A near-contact optical touch-screen sensor module is disclosed in this invention. This sensor module includes a patterned light filtering top glass plate having an array of light filtering window slit holes as the locations for the sensor switches, a LED diode lightened light guide placed in parallel underneath the patterned light filtering top glass plate emitting out a uniform band of light beams transmitting through the window slit holes of the top glass plate, and a serial-scan linear image sensing array supported on a print circuit board having the photo-detecting elements placed closely underneath the neighbor of each of the window slit holes of the top glass plate. The output signals of the image sensing array will indicate if a particular window slit has been touched by the fingertip.

Abstract: A card device comprises a card-dispensing stop board which is provided with two racks mounted thereon. The stop board can be adjusted in position by a gear shaft of the card device. The gear shaft is provided with two gears mounted on both ends thereof such that the two gears are meshed with the two racks of the stop board. The gear shaft is provided at one end with a rotary knob for actuating the gear shaft to drive the stop board to displace upward or downward.

Abstract: A CMOS charge-integration mode photo-detector built on an n-type substrate is disclosed in this invention. This photo-detector includes a p+n photodiode with the n-type substrate constituting an n-region and a p+ diffusion region disposed near a top surface of the n-type substrate, the p+ diffusion region constituting a charge integration node. The photodetector further includes a gate-biased charge storable n-type MOS transistor functioning as a photo-conversion voltage amplifier supported on the substrate formed with a threshold voltage of Vt0 having a gate terminal connected to the charge-integration node. The photodetector further includes a MOS transistor supported on the substrate functioning as a constant current-source load transistor having a drain terminal connected to a source terminal of the gate-biased charge storable n-type MOS transistor and a gate terminal connected to a bias reference voltage.

Abstract: A CMOS charge-integration mode photo-detector built on an n-type substrate is disclosed in this invention. This photo-detector includes a p+n photodiode with the n-type substrate constituting an n-region and a p+ diffusion region disposed near a top surface of the n-type substrate, the p+ diffusion region constituting a charge integration node. The photodetector further includes a gate-biased charge storable n-type MOS transistor functioning as a photo-conversion voltage amplifier supported on the substrate formed with a threshold voltage of Vt0 having a gate terminal connected to the charge-integration node. The photodetector further includes a MOS transistor supported on the substrate functioning as a constant current-source load transistor having a drain terminal connected to a source terminal of the gate-biased charge storable n-type MOS transistor and a gate terminal connected to a bias reference voltage.

Abstract: A CMOS charge-integration mode photo-detector built on an n-type substrate is disclosed in this invention. This photo-detector includes a p+n photodiode with the n-type substrate constituting an n-region and a p+ diffusion region disposed near a top surface of the n-type substrate, the p+ diffusion region constituting a charge integration node. The photo-detector further includes a gate-biased charge storable n-type MOS transistor functioning as a photo-conversion voltage amplifier supported on the substrate formed with a threshold voltage of Vt0 having a gate terminal connected to the charge integration node. The photo-detector further includes a MOS transistor supported on the substrate functioning as a readout switch transistor having a source terminal connected to a drain terminal of the gate-based charge storable n-type MOS transistor.

Abstract: A decoration article with an automatic flaking device has a bottom basin in which are disposed a battery power source and a motor and an electric circuit including a sound actuating device; and a flake circulating tube having a top outlet and a bottom inlet disposed at both ends thereof with the bottom inlet in contact with an inclined surface disposed on top of the bottom basin is provided with a screw conveyor by which the snow flakes are delivered to the top of the circulating tube and a dispersing device secured to the upper end of the screw conveyer is employed to disperse the flakes evenly via an obliquely located guide plate so that a continual snowing scene can be created with the addition of sound and light effects, making the decoration article more appealing and fascinating.