Abstract: A method is for removing residue of plastic from metal parts of plastic packages of semiconductor devices, e.g., heat-sinks and terminals. The surfaces to be treated are subjected to pulsed laser radiation. The wavelength is chosen in such a way that residue of plastic in thin films have good transparency to the radiation, and the metal has a high absorption capacity with respect to the radiation. Moreover, the intensity and duration of application of the radiation causes the formation of plasma at the point of impact of the radiation with the surface to be treated.

Abstract: A process comprises the following operations: forming a structure of metal elements with functions of support and electrical connection, these metal elements having a high degree of surface finish; fixing a chip of semiconductor material, containing active parts and contact pads, to an area of a metal element of the structure acting as a support; electrically connecting the contact pads of the chip to predetermined metal elements of the structure acting as terminal conductors; and incorporating in plastic the chip of semiconductor material and part of the structure of metal elements. To improve the adhesion between the structure and the plastic, at least part of the surface of the metal elements is roughened by irradiation with a laser light beam.

Abstract: A method and apparatus for electrically insulating heat sinks in electronic power devices that includes the formation of an insulating layer on the face of the electronic device having the heat sink. The insulating layer may be formed from an epoxy resin, commonly known as "solder mask" in the manufacture of printed circuits.