Abstract: Process for manufacturing a MEMS device, including: forming a dielectric region which coats part of a semiconductive substrate of a first semiconductive wafer; forming a region which is permeable to gases and coats the dielectric region; coupling the first semiconductive wafer to a second semiconductive wafer so as to form a first chamber, which houses a first movable mass and has a pressure equal to a first value, and a second chamber, which houses a second movable mass and has a pressure equal to the first value, the permeable region facing the second chamber; selectively removing a portion of the semiconductor substrate and an underlying portion of the dielectric region, so as to expose a part of the permeable region, so as to allow gas exchanges through the permeable region; placing the first and the second semiconductive wafers in an environment with a pressure equal to a second value, so that the pressure in the second chamber becomes equal to the second value; and subsequently forming, on the exposed p

Abstract: A thermoelectric generator includes a substrate and one or more thermoelectric elements on the substrate and each configured to convert a thermal drop across the thermoelectric elements into an electric potential by Seebeck effect. The thermoelectric generator includes a cavity between the substrate and the thermoelectric elements. The thermoelectric generator includes, within the cavity, a support structure for supporting the thermoelectric elements. The support structure has a thermal conductivity lower than a thermal conductivity of the substrate.

Abstract: MEMS thermoelectric generator comprising: a thermoelectric cell including one or more thermoelectric elements partially extending on a cavity of the thermoelectric cell; a thermoplastic layer extending on the thermoelectric cell and having a top surface and a bottom surface opposite to each other along a first axis, the bottom surface facing the thermoelectric cell and the thermoplastic layer being of thermally insulating material and configured to be processed through laser direct structuring, LDS, technique; a heat sink configured to exchange heat with the thermoelectric cell interposed, along the first axis, between the heat sink and the thermoplastic layer; and a thermal via of metal material, extending through the thermoplastic layer from the top surface to the bottom surface so that it is superimposed, along the first axis, on the cavity, wherein the thermoelectric cell may exchange heat with a thermal source through the thermal via.

Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectri

Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectri

Abstract: The present disclosure is directed to a method for manufacturing a micro-electro-mechanical device. The method includes the steps of forming, on a substrate, a first protection layer of crystallized aluminum oxide, impermeable to HF; forming, on the first protection layer, a sacrificial layer of silicon oxide removable with HF; forming, on the sacrificial layer, a second protection layer of crystallized aluminum oxide; exposing a sacrificial portion of the sacrificial layer; forming, on the sacrificial portion, a first membrane layer of a porous material, permeable to HF; forming a cavity by removing the sacrificial portion through the first membrane layer; and sealing pores of the first membrane layer by forming a second membrane layer on the first membrane layer.

Abstract: Method for manufacturing a micro-electro-mechanical system, MEMS, integrating a first MEMS device and a second MEMS device. The first MEMS device is a capacitive pressure sensor and the second MEMS device is an inertial sensor. The steps of manufacturing the first and second MEMS devices are, at least partly, shared with each other, resulting in a high degree of integration on a single die, and allowing to implement a manufacturing process with high yield and controlled costs.

Abstract: MEMS device formed in a semiconductor body which is monolithic and has a first and a second main surface. A buried cavity extends into the semiconductor body below and at a distance from the first main surface. A diaphragm extends between the buried cavity and the first main surface of the semiconductor body and has a buried face facing the buried cavity. A diaphragm insulating layer extends on the buried face of the diaphragm and a lateral insulating region extends into the semiconductor body along a closed line, between the first main surface and the diaphragm insulating layer, above the buried cavity. The lateral insulating region laterally delimits the diaphragm and forms, with the diaphragm insulating layer, a diaphragm insulating region which delimits the diaphragm and electrically insulates it from the rest of the wafer.

Abstract: A semiconductor device includes: a substrate; a transduction microstructure integrated in the substrate; a cap joined to the substrate and having a first face adjacent to the substrate and a second, outer, face; and a channel extending through the cap from the second face to the first face and communicating with the transduction microstructure. A protective membrane made of porous polycrystalline silicon permeable to aeriform substances is set across the channel.

Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectri

Abstract: A thermoelectric generator includes a substrate and one or more thermoelectric elements on the substrate and each configured to convert a thermal drop across the thermoelectric elements into an electric potential by Seebeck effect. The thermoelectric generator includes a cavity between the substrate and the thermoelectric elements. The thermoelectric generator includes, within the cavity, a support structure for supporting the thermoelectric elements. The support structure has a thermal conductivity lower than a thermal conductivity of the substrate.

Abstract: Methods for manufacturing a microfluidic delivery device comprising a semiconductor structure, such as silicon, are provided. In particular, the structure for delivering fluid may be formed from polycrystalline silicon, also called polysilicon, or epitaxial silicon. The microfluidic delivery device that predominantly uses semiconductor material, such as silicon, to form the structures that are in contact with the dispensed fluid results in a device that is compatible with a wide set of fluids and applications.

Abstract: Process for transforming synthetic and vegetable fibres into a non-woven fabric of the type which provides the following sequence of processing steps: flock opening step, during which fibrous materials of different shapes and sizes are transformed into fibre flocks of different lengths; drawing and treatment step of the material selected in the previous step; cutting and trimming step: once the drawing and treatment step of the material has been completed, the non-woven fabric is subject to longitudinal cutting and trimming, to make a series of rolls, usually two or three, for final use, characterised in that, after the opening step, the flocks are transferred to a condenser, where the long-fibre flocks are separated from the short-fibre flocks, by means of a perforated mesh screen.

Abstract: A method for feeding an antistatic compound to a polymerization reactor comprising the steps of: a) dispersing, under mixing conditions, a catalyst powder and an antistatic compound in an oil, so as to form a suspension of catalyst powder and antistatic compound in said oil; b) successively adding, under mixing conditions, a molten thickening agent to said suspension from step a), while maintaining said suspension at a temperature such that said thickening agent solidifies on contact with said suspension; c) transferring the product obtained from b) to a polymerization reactor.

Abstract: Device and method to deliver at least a substance with a liquid base for cosmetic, pharmaceutical, medical and/or trichological use, comprising at least one tank containing the substance (11) and a nebulizing group to nebulize and deliver the substance.

Abstract: A microfluidic device, comprising: a semiconductor body, having a first side and a second side, opposite to one another in a first direction; and at least one well, configured for containing a fluid, extending in the semiconductor body starting from the first side and being delimited at the bottom by a bottom surface. The microfluidic device further comprises a stirring structure integrated in the well at the bottom surface, the stirring structure including a first stirring portion coupled to the semiconductor body and provided with at least one first suspended beam configured for being moved in a second direction so as to generate, in use, agitation of the fluid present in said well.

Abstract: Embodiments disclose herein are directed to a microfluidic delivery device that has a predominantly semiconductor structure, such as silicon. In particular, the structure for delivering fluid may be formed from polycrystalline silicon, also called polysilicon, or epitaxial silicon. The microfluidic delivery device that predominantly uses silicon based materials to form the structures that are in contact with the dispensed fluid results in a device that is compatible with a wide set of fluids and applications.

Abstract: A microfluidic device, comprising: a semiconductor body, having a first side and a second side, opposite to one another in a first direction; and at least one well, configured for containing a fluid, extending in the semiconductor body starting from the first side and being delimited at the bottom by a bottom surface. The microfluidic device further comprises a stirring structure integrated in the well at the bottom surface, the stirring structure including a first stirring portion coupled to the semiconductor body and provided with at least one first suspended beam configured for being moved in a second direction so as to generate, in use, agitation of the fluid present in said well.

Abstract: Embodiments disclose herein are directed to a microfluidic delivery device that has a predominantly semiconductor structure, such as silicon. In particular, the structure for delivering fluid may be formed from polycrystalline silicon, also called polysilicon, or epitaxial silicon. The microfluidic delivery device that predominantly uses silicon based materials to form the structures that are in contact with the dispensed fluid results in a device that is compatible with a wide set of fluids and applications.

Abstract: Embodiments disclose herein are directed to a microfluidic delivery device that has a predominantly semiconductor structure, such as silicon. In particular, the structure for delivering fluid may be formed from polycrystalline silicon, also called polysilicon, or epitaxial silicon. The microfluidic delivery device that predominantly uses silicon based materials to form the structures that are in contact with the dispensed fluid results in a device that is compatible with a wide set of fluids and applications.