Patents by Inventor Paolo Tessariol

Paolo Tessariol has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060205136
    Abstract: A method of making a non-volatile MOS semiconductor memory device includes a formation step, in a semiconductor material substrate, of STI isolation regions (shallow trench isolation) filled by field oxide and of memory cells separated each other by said STI isolation regions. The memory cells include a gate electrode electrically isolated from said semiconductor material substrate by a first dielectric layer, and the gate electrode includes a floating gate self-aligned to the STI isolation regions. The method includes a formation phase of said floating gate exhibiting a substantially saddle shape including a concavity; the formation step of said floating gate includes a deposition step of a first conformal conductor material layer.
    Type: Application
    Filed: December 22, 2005
    Publication date: September 14, 2006
    Inventors: Paolo Tessariol, Roberto Bez, Marcello Mariani