Patents by Inventor Parijat Deb
Parijat Deb has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11959800Abstract: An automotive headlight is disclosed including: an optical unit including a plurality of optical elements, each optical element having a different central direction; a segmented light-emitting diode (LED) chip including a plurality of LEDs that are separated by trenches formed on the segmented LED chip and arranged in a plurality of sections, each section being aligned with a different respective optical element, and each section including at least one first LED and at least one second LED; and a controller configured to: apply a forward bias to each of the first LEDs, apply a reverse bias to each of the second LEDs, and change a brightness of the first LEDs in any section based on a signal generated by the second LED in that section.Type: GrantFiled: July 26, 2022Date of Patent: April 16, 2024Assignee: Lumileds LLCInventors: Erik Charles Nelson, Isaac Wildeson, Parijat Deb, Kenneth Vampola
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Publication number: 20230175671Abstract: A light-emitting diode (LED) can have a light-emitting surface that can emit emitted light. A filter, disposed on the light-emitting surface, can be at least partially transmissive in a first area and at least partially reflective in a second area. The first area can direct at least some of the emitted light through the filter to form shaped light that extends over an area corresponding to a shape of a static light pattern. The second area can reflect at least some of the emitted light into the LED through the light-emitting surface. A lens can bring the shaped light to a focus that has the shape of the static light pattern. To increase a contrast of the focus, an absorber, disposed on the second area of the filter, can absorb emitted light that is transmitted through the second area of the filter.Type: ApplicationFiled: November 21, 2022Publication date: June 8, 2023Inventors: Gregoire Denis, Rohit Modi, Benno Spinger, Niels Jeroen van der Veen, Parijat Deb
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Publication number: 20220364913Abstract: An automotive headlight is disclosed including: an optical unit including a plurality of optical elements, each optical element having a different central direction; a segmented light-emitting diode (LED) chip including a plurality of LEDs that are separated by trenches formed on the segmented LED chip and arranged in a plurality of sections, each section being aligned with a different respective optical element, and each section including at least one first LED and at least one second LED; and a controller configured to: apply a forward bias to each of the first LEDs, apply a reverse bias to each of the second LEDs, and change a brightness of the first LEDs in any section based on a signal generated by the second LED in that section.Type: ApplicationFiled: July 26, 2022Publication date: November 17, 2022Inventors: Erik Charles Nelson, Isaac Wildeson, Parijat Deb, Kenneth Vampola
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Publication number: 20220320380Abstract: This specification discloses pcLEDs in which the wavelength converting structure comprises one or more layers of phosphor particles disposed on a transparent substrate at high packing density. The particles are coated with an inorganic non-absorbing layer which mechanically stabilizes the phosphor particle layers and provides a thermally conductive connection between the phosphor particles. The wavelength converting structure is attached to a semiconductor LED die with the transparent substrate of the wavelength converting structure facing away from the die by a thin glue layer that bonds a light emitting surface of the die to the phosphor particle layers. Methods for fabricating such pcLEDs are also disclosed.Type: ApplicationFiled: March 31, 2021Publication date: October 6, 2022Applicant: LUMILEDS LLCInventors: Hans-Helmut Bechtel, Parijat Deb, Niels Jeroen van der Veen
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Patent number: 11435225Abstract: An automotive headlight is disclosed including: an optical unit including a plurality of optical elements, each optical element having a different central direction; a segmented light-emitting diode (LED) chip including a plurality of LEDs that are separated by trenches formed on the segmented LED chip and arranged in a plurality of sections, each section being aligned with a different respective optical element, and each section including at least one first LED and at least one second LED; and a controller configured to: apply a forward bias to each of the first LEDs, apply a reverse bias to each of the second LEDs, and change a brightness of the first LEDs in any section based on a signal generated by the second LED in that section.Type: GrantFiled: September 15, 2020Date of Patent: September 6, 2022Assignee: Lumileds LLCInventors: Erik Charles Nelson, Isaac Wildeson, Parijat Deb, Kenneth Vampola
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Patent number: 11404599Abstract: In a method according to embodiments of the invention, a semiconductor structure including a III-nitride light emitting layer disposed between a p-type region and an n-type region is grown. The p-type region is buried within the semiconductor structure. A trench is formed in the semiconductor structure. The trench exposes the p-type region. After forming the trench, the semiconductor structure is annealed.Type: GrantFiled: July 2, 2020Date of Patent: August 2, 2022Assignee: LUMILEDS LLCInventors: Isaac Wildeson, Erik Charles Nelson, Parijat Deb
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Patent number: 11322650Abstract: A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer.Type: GrantFiled: July 12, 2018Date of Patent: May 3, 2022Assignee: Lumileds LLCInventors: Lekhnath Bhusal, Theodore Chung, Parijat Deb
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Publication number: 20220131028Abstract: Described are light emitting diode (LED) devices having patterned substrates and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The nucleation layer results in growth of smooth coalesced III-nitride layers over the patterns.Type: ApplicationFiled: January 7, 2022Publication date: April 28, 2022Applicant: Lumileds LLCInventors: Isaac Wildeson, Toni Lopez, Hee-Jin Kim, Robert Armitage, Parijat Deb
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Publication number: 20220085236Abstract: Described are light emitting diode (LED) devices having patterned substrates and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The nucleation layer results in growth of smooth coalesced III-nitride layers over the patterns.Type: ApplicationFiled: November 22, 2021Publication date: March 17, 2022Applicant: Lumileds LLCInventors: Isaac Wildeson, Toni Lopez, Hee-Jin Kim, Robert Armitage, Parijat Deb
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Patent number: 11264530Abstract: Described are light emitting diode (LED) devices having patterned substrates and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The nucleation layer results in growth of smooth coalesced III-nitride layers over the patterns.Type: GrantFiled: December 19, 2019Date of Patent: March 1, 2022Assignee: LUMILEDS LLCInventors: Isaac Wildeson, Toni Lopez, Hee-Jin Kim, Robert Armitage, Parijat Deb
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Patent number: 11211527Abstract: Light emitting diode (LED) devices comprise: a patterned substrate comprising a substrate body, a plurality of integral features protruding from the substrate body, and a base surface defined by spaces between the plurality of integral features; a selective layer comprising a dielectric material located on the surfaces of the integral features, wherein there is an absence of the selective layer on the base surface; and a III-nitride layer comprising a III-nitride material on the selective layer and the base surface.Type: GrantFiled: December 19, 2019Date of Patent: December 28, 2021Assignee: Lumileds LLCInventors: Isaac Wildeson, Toni Lopez, Robert Armitage, Parijat Deb
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Patent number: 11069525Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: GrantFiled: April 14, 2020Date of Patent: July 20, 2021Assignee: LUMILEDS LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
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Patent number: 11069836Abstract: Described herein are methods for growing light emitting devices under ultra-violet (UV) illumination. A method includes growing a III-nitride n-type layer over a III-nitride p-type layer under UV illumination. Another method includes growing a light emitting device structure on a growth substrate and growing a tunnel junction on the light emitting device structure, where certain layers are grown under UV illumination. Another method includes forming a III-nitride tunnel junction n-type layer over the III-nitride p-type layer to form a tunnel junction light emitting diode. A surface of the III-nitride tunnel junction n-type layer is done under illumination during an initial period and a remainder of the formation is completed absent illumination. The UV light has photon energy higher than the III-nitride p-type layer's band gap energy. The UV illumination inhibits formation of Mg—H complexes within the III-nitride p-type layer resulting from hydrogen present in a deposition chamber.Type: GrantFiled: December 17, 2019Date of Patent: July 20, 2021Assignee: LUMILEDS LLCInventors: Tsutomu Ishikawa, Isaac Wildeson, Erik Charles Nelson, Parijat Deb
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Patent number: 11069524Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: GrantFiled: February 27, 2020Date of Patent: July 20, 2021Assignee: LUMILEDS LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
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Publication number: 20210193869Abstract: Light emitting diode (LED) devices comprise: a patterned substrate comprising a substrate body, a plurality of integral features protruding from the substrate body, and a base surface defined by spaces between the plurality of integral features; a selective layer comprising a dielectric material located on the surfaces of the integral features, wherein there is an absence of the selective layer on the base surface; and a III-nitride layer comprising a III-nitride material on the selective layer and the base surface.Type: ApplicationFiled: December 19, 2019Publication date: June 24, 2021Applicant: Lumileds LLCInventors: Isaac Wildeson, Toni Lopez, Robert Armitage, Parijat Deb
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Publication number: 20210193863Abstract: Described are light emitting diode (LED) devices having patterned substrates and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The nucleation layer results in growth of smooth coalesced III-nitride layers over the patterns.Type: ApplicationFiled: December 19, 2019Publication date: June 24, 2021Applicant: Lumileds LLCInventors: Isaac Wildeson, Toni Lopez, Hee-Jin Kim, Robert Armitage, Parijat Deb
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Publication number: 20210066545Abstract: A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, wherein at least a portion of the electron blocking layer is arranged to have a tensile strain, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer.Type: ApplicationFiled: July 12, 2018Publication date: March 4, 2021Applicant: Lumileds LLCInventors: Lekhnath BHUSAL, Theodore CHUNG, Parijat DEB
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Publication number: 20200413500Abstract: An automotive headlight is disclosed including: an optical unit including a plurality of optical elements, each optical element having a different central direction; a segmented light-emitting diode (LED) chip including a plurality of LEDs that are separated by trenches formed on the segmented LED chip and arranged in a plurality of sections, each section being aligned with a different respective optical element, and each section including at least one first LED and at least one second LED; and a controller configured to: apply a forward bias to each of the first LEDs, apply a reverse bias to each of the second LEDs, and change a brightness of the first LEDs in any section based on a signal generated by the second LED in that section.Type: ApplicationFiled: September 15, 2020Publication date: December 31, 2020Inventors: Erik Charles Nelson, Isaac Wildeson, Parijat Deb, Kenneth Vampola
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Publication number: 20200411720Abstract: A light emitting diode (LED) array may include a first pixel and a second pixel on a substrate. The first pixel and the second pixel may include one or more tunnel junctions on one or more LEDs. The LED array may include a first trench between the first pixel and the second pixel. The trench may extend to the substrate.Type: ApplicationFiled: September 2, 2020Publication date: December 31, 2020Applicant: Lumileds LLCInventors: Isaac Wildeson, Parijat Deb, Robert Armitage
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Publication number: 20200335657Abstract: In a method according to embodiments of the invention, a semiconductor structure including a III-nitride light emitting layer disposed between a p-type region and an n-type region is grown. The p-type region is buried within the semiconductor structure. A trench is formed in the semiconductor structure. The trench exposes the p-type region. After forming the trench, the semiconductor structure is annealed.Type: ApplicationFiled: July 2, 2020Publication date: October 22, 2020Applicant: Lumileds LLCInventors: Isaac Wildeson, Erik Charles Nelson, Parijat Deb