Patents by Inventor Parijat Deb
Parijat Deb has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10813184Abstract: An automotive headlight is disclosed including: an optical unit including a plurality of optical elements, each optical element having a different central direction; a segmented light-emitting diode (LED) chip including a plurality of LEDs that are separated by trenches formed on the segmented LED chip and arranged in a plurality of sections, each section being aligned with a different respective optical element, and each section including at least one first LED and at least one second LED; and a controller configured to: apply a forward bias to each of the first LEDs, apply a reverse bias to each of the second LEDs, and change a brightness of the first LEDs in any section based on a signal generated by the second LED in that section.Type: GrantFiled: March 27, 2019Date of Patent: October 20, 2020Assignee: Lumileds LLCInventors: Erik Charles Nelson, Isaac Wildeson, Parijat Deb, Kenneth Vampola
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Patent number: 10749070Abstract: In a method according to embodiments of the invention, a semiconductor structure including a III-nitride light emitting layer disposed between a p-type region and an n-type region is grown. The p-type region is buried within the semiconductor structure. A trench is formed in the semiconductor structure. The trench exposes the p-type region. After forming the trench, the semiconductor structure is annealed.Type: GrantFiled: May 11, 2017Date of Patent: August 18, 2020Assignee: LUMILEDS LLCInventors: Isaac Wildeson, Erik Charles Nelson, Parijat Deb
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Publication number: 20200243331Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: ApplicationFiled: April 14, 2020Publication date: July 30, 2020Applicant: Lumileds LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
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Publication number: 20200235263Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.Type: ApplicationFiled: April 8, 2020Publication date: July 23, 2020Applicant: Lumileds LLCInventors: Isaac Wildeson, Patrick Nolan Grillot, Tigran Nshanian, Parijat Deb
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Publication number: 20200203158Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: ApplicationFiled: February 27, 2020Publication date: June 25, 2020Applicant: Lumileds LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
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Publication number: 20200127166Abstract: Described herein are methods for growing light emitting devices under ultra-violet (UV) illumination. A method includes growing a III-nitride n-type layer over a III-nitride p-type layer under UV illumination. Another method includes growing a light emitting device structure on a growth substrate and growing a tunnel junction on the light emitting device structure, where certain layers are grown under UV illumination. Another method includes forming a III-nitride tunnel junction n-type layer over the III-nitride p-type layer to form a tunnel junction light emitting diode. A surface of the III-nitride tunnel junction n-type layer is done under illumination during an initial period and a remainder of the formation is completed absent illumination. The UV light has photon energy higher than the III-nitride p-type layer's band gap energy. The UV illumination inhibits formation of Mg—H complexes within the III-nitride p-type layer resulting from hydrogen present in a deposition chamber.Type: ApplicationFiled: December 17, 2019Publication date: April 23, 2020Applicant: Lumileds LLCInventors: Tsutomu Ishikawa, Isaac Wildeson, Erik Charles Nelson, Parijat Deb
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Patent number: 10622206Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: GrantFiled: February 13, 2019Date of Patent: April 14, 2020Assignee: Lumileds LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
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Patent number: 10541352Abstract: Described herein are methods for growing light emitting devices under ultra-violet (UV) illumination. A method includes growing a III-nitride n-type layer over a III-nitride p-type layer under UV illumination. Another method includes growing a light emitting device structure on a growth substrate and growing a tunnel junction on the light emitting device structure, where certain layers are grown under UV illumination. Another method includes forming a III-nitride tunnel junction n-type layer over the III-nitride p-type layer to form a tunnel junction light emitting diode. A surface of the III-nitride tunnel junction n-type layer is done under illumination during an initial period and a remainder of the formation is completed absent illumination. The UV light has photon energy higher than the III-nitride p-type layer's band gap energy. The UV illumination inhibits formation of Mg—H complexes within the III-nitride p-type layer resulting from hydrogen present in a deposition chamber.Type: GrantFiled: October 25, 2017Date of Patent: January 21, 2020Inventors: Tsutomu Ishikawa, Isaac Wildeson, Erik Charles Nelson, Parijat Deb
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Patent number: 10522717Abstract: A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer. The active layer may include a first barrier layer arranged to have a tensile strain, a second barrier layer arranged to have a tensile strain, and a first well layer disposed between the first barrier layer and the second barrier layer. The active layer may also include a first unstrained barrier layer, a second unstrained barrier layer, and a second well layer disposed between the first unstrained barrier layer and the second unstrained barrier layer.Type: GrantFiled: September 25, 2018Date of Patent: December 31, 2019Assignee: Lumileds LLCInventors: Lekhnath Bhusal, Theodore Chung, Parijat Deb
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Publication number: 20190223267Abstract: An automotive headlight is disclosed including: an optical unit including a plurality of optical elements, each optical element having a different central direction; a segmented light-emitting diode (LED) chip including a plurality of LEDs that are separated by trenches formed on the segmented LED chip and arranged in a plurality of sections, each section being aligned with a different respective optical element, and each section including at least one first LED and at least one second LED; and a controller configured to: apply a forward bias to each of the first LEDs, apply a reverse bias to each of the second LEDs, and change a brightness of the first LEDs in any section based on a signal generated by the second LED in that section.Type: ApplicationFiled: March 27, 2019Publication date: July 18, 2019Applicant: Lumileds LLCInventors: Erik Charles Nelson, Isaac Wildeson, Parijat Deb, Kenneth Vampola
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Publication number: 20190189436Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: ApplicationFiled: February 13, 2019Publication date: June 20, 2019Applicant: Lumileds LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
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Patent number: 10285236Abstract: An automotive headlight is disclosed including: an optical unit including a plurality of optical elements, each optical element having a different central direction; a segmented light-emitting diode (LED) chip including a plurality of LEDs that are separated by trenches formed on the segmented LED chip and arranged in a plurality of sections, each section being aligned with a different respective optical element, and each section including at least one first LED and at least one second LED; and a controller configured to: apply a forward bias to each of the first LEDs, apply a reverse bias to each of the second LEDs, and change a brightness of the first LEDs in any section based on a signal generated by the second LED in that section.Type: GrantFiled: April 9, 2018Date of Patent: May 7, 2019Assignee: Lumileds, LLCInventors: Erik Charles Nelson, Isaac Wildeson, Parijat Deb, Kenneth Vampola
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Patent number: 10236409Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: GrantFiled: May 19, 2017Date of Patent: March 19, 2019Assignee: Lumileds LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
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Publication number: 20190082508Abstract: An automotive headlight is disclosed including: an optical unit including a plurality of optical elements, each optical element having a different central direction; a segmented light-emitting diode (LED) chip including a plurality of LEDs that are separated by trenches formed on the segmented LED chip and arranged in a plurality of sections, each section being aligned with a different respective optical element, and each section including at least one first LED and at least one second LED; and a controller configured to: apply a forward bias to each of the first LEDs, apply a reverse bias to each of the second LEDs, and change a brightness of the first LEDs in any section based on a signal generated by the second LED in that section.Type: ApplicationFiled: April 9, 2018Publication date: March 14, 2019Applicant: Lumileds LLCInventors: Erik Charles Nelson, Isaac Wildeson, Parijat Deb, Kenneth Vampola
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Publication number: 20190035977Abstract: A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer. The active layer may include a first barrier layer arranged to have a tensile strain, a second barrier layer arranged to have a tensile strain, and a first well layer disposed between the first barrier layer and the second barrier layer. The active layer may also include a first unstrained barrier layer, a second unstrained barrier layer, and a second well layer disposed between the first unstrained barrier layer and the second unstrained barrier layer.Type: ApplicationFiled: September 25, 2018Publication date: January 31, 2019Applicant: Lumileds LLCInventors: Lekhnath Bhusal, Theodore Chung, Parijat Deb
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Patent number: 10141477Abstract: A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer.Type: GrantFiled: July 28, 2017Date of Patent: November 27, 2018Assignee: Lumileds LLCInventors: Lekhnath Bhusal, Theodore Chung, Parijat Deb
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Patent number: 9974135Abstract: An apparatus is disclosed that includes a segmented light-emitting diode (LED) chip having a plurality of LEDs that are separated by trenches formed on the segmented LED chip and arranged in a plurality of sections, each section including at least one first LED and at least one second LED; and a controller configured to: apply a forward bias to each of the first LEDs; apply a reverse bias to each of the second LEDs; and change a brightness of the first LEDs in any section based on a signal generated by the second LED in that section.Type: GrantFiled: September 8, 2017Date of Patent: May 15, 2018Assignee: Lumileds LLCInventors: Erik Charles Nelson, Isaac Wildeson, Parijat Deb, Kenneth Vampola
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Publication number: 20180122989Abstract: Described herein are methods for growing light emitting devices under ultra-violet (UV) illumination. A method includes growing a III-nitride n-type layer over a III-nitride p-type layer under UV illumination. Another method includes growing a light emitting device structure on a growth substrate and growing a tunnel junction on the light emitting device structure, where certain layers are grown under UV illumination. Another method includes forming a III-nitride tunnel junction n-type layer over the III-nitride p-type layer to form a tunnel junction light emitting diode. A surface of the III-nitride tunnel junction n-type layer is done under illumination during an initial period and a remainder of the formation is completed absent illumination. The UV light has photon energy higher than the III-nitride p-type layer's band gap energy. The UV illumination inhibits formation of Mg—H complexes within the III-nitride p-type layer resulting from hydrogen present in a deposition chamber.Type: ApplicationFiled: October 25, 2017Publication date: May 3, 2018Applicant: Lumileds LLCInventors: Tsutomu ISHIKAWA, Isaac WILDESON, Erik Charles NELSON, Parijat DEB
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Publication number: 20170338369Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: ApplicationFiled: May 19, 2017Publication date: November 23, 2017Applicant: Lumileds LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
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Publication number: 20170338373Abstract: In a method according to embodiments of the invention, a semiconductor structure including a III-nitride light emitting layer disposed between a p-type region and an n-type region is grown. The p-type region is buried within the semiconductor structure. A trench is formed in the semiconductor structure. The trench exposes the p-type region. After forming the trench, the semiconductor structure is annealed.Type: ApplicationFiled: May 11, 2017Publication date: November 23, 2017Inventors: Isaac Wildeson, Erik Charles Nelson, Parijat Deb