Patents by Inventor Parviz Keshtbod
Parviz Keshtbod has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120003757Abstract: A multi-state current-switching magnetic memory element includes a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.Type: ApplicationFiled: September 16, 2011Publication date: January 5, 2012Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Rajiv Yadav Ranjan, Mahmud Assar, Parviz Keshtbod
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Publication number: 20120002463Abstract: A multi-state current-switching magnetic memory element includes a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.Type: ApplicationFiled: September 16, 2011Publication date: January 5, 2012Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Rajiv Yadav Ranjan, Mahmud Assar, Parviz Keshtbod
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Patent number: 8084835Abstract: A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.Type: GrantFiled: February 12, 2007Date of Patent: December 27, 2011Assignee: Avalanche Technology, Inc.Inventors: Rajiv Yadav Ranjan, Petro Estakhri, Mahmud Assar, Parviz Keshtbod
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Publication number: 20110303998Abstract: A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.Type: ApplicationFiled: August 18, 2011Publication date: December 15, 2011Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Rajiv Yadav Ranjan, Parviz Keshtbod, Roger Klas Malmhall
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Publication number: 20110305078Abstract: A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.Type: ApplicationFiled: August 24, 2011Publication date: December 15, 2011Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Rajiv Yadav Ranjan, Parviz Keshtbod, Roger Klas Malmhall
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Patent number: 8063459Abstract: A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.Type: GrantFiled: July 12, 2007Date of Patent: November 22, 2011Assignee: Avalanche Technologies, Inc.Inventors: Rajiv Yadav Ranjan, Parviz Keshtbod, Roger Klas Malmhall
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Patent number: 8058696Abstract: A multi-state current-switching magnetic memory element includes a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.Type: GrantFiled: February 23, 2007Date of Patent: November 15, 2011Assignee: Avalanche Technology, Inc.Inventors: Rajiv Yadav Ranjan, Mahmud Assar, Parviz Keshtbod
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Patent number: 8018011Abstract: A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.Type: GrantFiled: September 24, 2007Date of Patent: September 13, 2011Assignee: Avalanche Technology, Inc.Inventors: Rajiv Yadav Ranjan, Parviz Keshtbod, Roger Klas Malmhall
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Publication number: 20110103143Abstract: A multi-state low-current-switching magnetic memory element (magnetic memory element) comprising a free layer, two stacks, and a magnetic tunneling junction is disclosed. The stacks and magnetic tunneling junction are disposed upon surfaces of the free layer, with the magnetic tunneling junction located between the stacks. The stacks pin magnetic domains within the free layer, creating a free layer domain wall. A current passed from stack to stack pushes the domain wall, repositioning the domain wall within the free layer. The position of the domain wall relative to the magnetic tunnel junction corresponds to a unique resistance value, and passing current from a stack to the magnetic tunnel junction reads the magnetic memory element's resistance. Thus, unique memory states may be achieved by moving the domain wall.Type: ApplicationFiled: January 7, 2011Publication date: May 5, 2011Applicant: AVALANCHE TECHNOLOGY INC.Inventors: Rajiv Yadav RANJAN, Roger Klas MALMHALL, Parviz KESHTBOD
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Publication number: 20110096593Abstract: A multi-state low-current-switching magnetic memory element (magnetic memory element) comprising a free layer, two stacks, and a magnetic tunneling junction is disclosed. The stacks and magnetic tunneling junction are disposed upon surfaces of the free layer, with the magnetic tunneling junction located between the stacks. The stacks pin magnetic domains within the free layer, creating a free layer domain wall. A current passed from stack to stack pushes the domain wall, repositioning the domain wall within the free layer. The position of the domain wall relative to the magnetic tunnel junction corresponds to a unique resistance value, and passing current from a stack to the magnetic tunnel junction reads the magnetic memory element's resistance. Thus, unique memory states may be achieved by moving the domain wall.Type: ApplicationFiled: January 5, 2011Publication date: April 28, 2011Applicant: AVALANCHE TECHNOLOGY INC.Inventors: Rajiv Yadav RANJAN, Roger Klas MALMHALL, Parviz KESHTBOD
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Publication number: 20110089511Abstract: A method of making a magnetic random access memory cell includes forming a magnetic tunnel junction (MTJ) on top of a wafer, depositing oxide on top of the MTJ, depositing a photo-resist layer on top of the oxide layer, forming a trench in the photo-resist layer and oxide layer where the trench has a width that is substantially the same as that of the MTJ. Then, the photo-resist layer is removed and a hard mask layer is deposited on top of the oxide layer in the trench and the wafer is planarized to remove the portion of the hard mask layer that is not in the trench to substantially level the top of oxide layer and the hard layer on the wafer. The remaining oxide layer is etched and the the MTJ is etched to remove the portion of the MTJ which is not covered by the hard mask layer.Type: ApplicationFiled: December 21, 2010Publication date: April 21, 2011Applicant: AVALANCHE TECHNOLOGY, INC.Inventors: Parviz KESHTBOD, Roger Klas MALMHALL, Rajiv Yadav RANJAN
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Patent number: 7869266Abstract: A multi-state low-current-switching magnetic memory element (magnetic memory element) comprising a free layer, two stacks, and a magnetic tunneling junction is disclosed. The stacks and magnetic tunneling junction are disposed upon surfaces of the free layer, with the magnetic tunneling junction located between the stacks. The stacks pin magnetic domains within the free layer, creating a free layer domain wall. A current passed from stack to stack pushes the domain wall, repositioning the domain wall within the free layer. The position of the domain wall relative to the magnetic tunnel junction corresponds to a unique resistance value, and passing current from a stack to the magnetic tunnel junction reads the magnetic memory element's resistance. Thus, unique memory states may be achieved by moving the domain wall.Type: GrantFiled: October 21, 2008Date of Patent: January 11, 2011Assignee: Avalanche Technology, Inc.Inventors: Rajiv Yadav Ranjan, Roger Klas Malmhall, Parviz Keshtbod
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Publication number: 20100221848Abstract: A magnetic random access memory (MRAM) cell includes an embedded MRAM and an access transistor. The embedded MRAM is formed on a number of metal-interposed-in-interlayer dielectric (ILD) layers, which each include metal dispersed therethrough and are formed on top of the access transistor. An magneto tunnel junction (MTJ) is formed on top of a metal formed in the ILD layers that is in close proximity to a bit line. An MTJ mask is used to pattern the MTJ and is etched to expose the MTJ. Ultimately, metal is formed on top of the bit line and extended to contact the MTJ.Type: ApplicationFiled: May 12, 2010Publication date: September 2, 2010Applicant: Avalanche Technology, Inc.Inventors: Parviz KESHTBOD, Ebrahim ABEDIFARD
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Publication number: 20090218645Abstract: A multi-state spin-torque transfer magnetic random access memory (STTMRAM) is formed on a film and includes a first magnetic tunneling junctions (MTJ) having a first fixed layer, a first sub-magnetic tunnel junction (sub-MTJ) layer and a first free layer. The first fixed layer and first free layer each have a first magnetic anisotropy. The STTMRAM further includes a non-magnetic spacing layer formed on top of the first MTJ layer and a second MTJ formed on top of the non-magnetic spacing layer. The second MTJ has a second fixed layer, a second sub-MTJ layer and a second free layer. The second fixed and second free layers each have a second magnetic anisotropy, wherein at least one of the first or second magnetic anisotropy is perpendicular to the plane of the film.Type: ApplicationFiled: March 3, 2009Publication date: September 3, 2009Applicant: Yadav Technology Inc.Inventors: Rajiv Yadav RANJAN, Parviz KESHTBOD
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Publication number: 20090154229Abstract: A sensing circuit includes a sense amplifier circuit having a first and second nodes through which a magnetic memory element is sensed. A first current source is coupled to the first node a second current source is coupled to the second node. A reference magnetic memory element has a resistance associated therewith and is coupled to the first node, the reference magnetic memory element receives current from the first current source. At least one memory element, having a resistance associated therewith, is coupled to the second node and receives current from the second current source. Current from the first current source and current from the second current source are substantially the same. The logic state of the at least one memory element is sensed by a comparison of the resistance of the at least one memory element to the resistance of the reference magnetic memory element.Type: ApplicationFiled: May 22, 2008Publication date: June 18, 2009Applicant: YADAV TECHNOLOGY INC.Inventor: Parviz KESHTBOD
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Publication number: 20090109739Abstract: A multi-state low-current-switching magnetic memory element (magnetic memory element) comprising a free layer, two stacks, and a magnetic tunneling junction is disclosed. The stacks and magnetic tunneling junction are disposed upon surfaces of the free layer, with the magnetic tunneling junction located between the stacks. The stacks pin magnetic domains within the free layer, creating a free layer domain wall. A current passed from stack to stack pushes the domain wall, repositioning the domain wall within the free layer. The position of the domain wall relative to the magnetic tunnel junction corresponds to a unique resistance value, and passing current from a stack to the magnetic tunnel junction reads the magnetic memory element's resistance. Thus, unique memory states may be achieved by moving the domain wall.Type: ApplicationFiled: October 21, 2008Publication date: April 30, 2009Applicant: YADAV TECHNOLOGY, INC.Inventors: Rajiv Yadav RANJAN, Roger Klaus Malmhall, Parviz Keshtbod
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Publication number: 20090046501Abstract: A flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die.Type: ApplicationFiled: July 30, 2008Publication date: February 19, 2009Applicant: YADAV TECHNOLOGY, INC.Inventors: Rajiv Yadav RANJAN, Parviz KESHTBOD, Mahmud ASSAR
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Publication number: 20080293165Abstract: In accordance with a method of the present invention, a method of manufacturing a magnetic random access memory (MRAM) cell and a corresponding structure thereof are disclosed to include a multi-stage manufacturing process. The multi-stage manufacturing process includes performing a front end on-line (FEOL) stage to manufacture logic and non-magnetic portions of the memory cell by forming an intermediate interlayer dielectric (ILD) layer, forming intermediate metal pillars embedded in the intermediate ILD layer, depositing a conductive metal cap on top of the intermediate ILD layer and the metal pillars, performing magnetic fabrication stage to make a magnetic material portion of the memory cell being manufactured, and performing back end on-line (BEOL) stage to make metal and contacts of the memory cell being manufactured.Type: ApplicationFiled: February 29, 2008Publication date: November 27, 2008Applicant: YADAV TECHNOLOGY, INC.Inventors: Rajiv Yadav RANJAN, Parviz KESHTBOD, Roger Klas MALMHALL
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Publication number: 20080246104Abstract: One embodiment of the present invention includes multi-state current-switching magnetic memory element including a stack of two or more magnetic tunneling junctions (MTJs), each MTJ having a free layer and being separated from other MTJs in the stack by a seeding layer formed upon an isolation layer, the stack for storing more than one bit of information, wherein different levels of current applied to the memory element causes switching to different states.Type: ApplicationFiled: October 3, 2007Publication date: October 9, 2008Applicant: YADAV TECHNOLOGYInventors: Rajiv Yadav Ranjan, Parviz Keshtbod, Roger Klas Malmhall
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Publication number: 20080225585Abstract: An embodiment of the present invention includes a multi-state current-switching magnetic memory element having a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.Type: ApplicationFiled: September 24, 2007Publication date: September 18, 2008Applicant: YADAV TECHNOLOGYInventors: Rajiv Yadav Ranjan, Parviz Keshtbod, Roger Klas Malmhall