Patents by Inventor Pascal Chevalier

Pascal Chevalier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250120106
    Abstract: A method of making a bipolar transistor includes: forming a first collector part of a first conductivity type in a semiconductor layer; forming a first insulating region made of a first insulating material on the first collector part; forming a conduction layer intended to form a first doped base part of the second conductivity type on the first insulating region; forming an opening having a first width in the conduction layer that emerges onto the first insulating region; forming an insulating layer on the conduction layer and in the opening; forming a cavity in the insulating layer and in the first insulating region that emerges onto a portion of the first collector part through the opening, the cavity having at the level of the opening a second width smaller than the first width; and forming a second collector part in the cavity on the portion of the first collector part.
    Type: Application
    Filed: October 3, 2024
    Publication date: April 10, 2025
    Applicant: STMicroelectronics International N.V.
    Inventors: Arnaud RIVAL, Alexis GAUTHIER, Edoardo BREZZA, Pascal CHEVALIER
  • Publication number: 20240404873
    Abstract: The present description concerns an integrated circuit chip including a semiconductor substrate and a radiofrequency component arranged inside and on top of an active region of the semiconductor substrate. The semiconductor substrate includes an amorphous buried layer in contact, by its upper surface, with a lower surface of the active region of the semiconductor substrate.
    Type: Application
    Filed: May 22, 2024
    Publication date: December 5, 2024
    Inventors: Pascal Chevalier, Siddhartha Dhar, Frederic Monsieur
  • Publication number: 20240404940
    Abstract: A device includes a bipolar transistor. The bipolar transistor includes: a collector region, a base region, and an emitter region. A first metallization is in contact with the emitter region, a second metallization is in contact with the base region, and a third metallization is in contact with the collector region. A first connection element is coupled to the first metallization and has dimensions, in a plane of the interface between the first metallization and the connection element, greater than dimensions of the first metallization. A second connection element is coupled to the second metallization and passes through spacers, which at least partially cover the second metallization, surrounding the emitter region. A third connection element is coupled to the third metallization and passes through spacers, which at least partially cover the third metallization, surrounding the base region.
    Type: Application
    Filed: May 30, 2024
    Publication date: December 5, 2024
    Applicant: STMicroelectronics International N.V.
    Inventor: Pascal CHEVALIER
  • Publication number: 20240355913
    Abstract: An electronic device includes a bipolar transistor. A collector of the bipolar transistor is formed by first and second regions. The second region is located between the first region and a base of the bipolar transistor. A conductive element at least partially surrounds and is insulated from the second region. The conductive element is located between the first region and the base.
    Type: Application
    Filed: April 16, 2024
    Publication date: October 24, 2024
    Applicant: STMicroelectronics International N.V.
    Inventors: Pascal CHEVALIER, Nicolas GUITARD
  • Patent number: 12125894
    Abstract: A bipolar transistor includes a collector. The collector is formed by: a first portion of the collector which extends under an insulating trench, and a second portion of the collector which crosses through the insulating trench. The first and second portions of the collector are in physical contact.
    Type: Grant
    Filed: October 26, 2023
    Date of Patent: October 22, 2024
    Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics France
    Inventors: Alexis Gauthier, Pascal Chevalier
  • Publication number: 20240332406
    Abstract: A bipolar transistor includes a first PN junction and a second PN junction. A first gate is located on the first PN junction. A second gate is located on the second PN junction.
    Type: Application
    Filed: March 20, 2024
    Publication date: October 3, 2024
    Applicant: STMicroelectronics International N.V.
    Inventors: Alexis GAUTHIER, Pascal CHEVALIER, Olivier WEBER, Franck ARNAUD
  • Patent number: 11996465
    Abstract: A bipolar transistor includes a collector. The collector is produced by a process wherein a first substantially homogeneously doped layer is formed at the bottom of a cavity. A second gradually doped layer is then formed by diffusion of dopants of the first substantially homogeneously doped layer.
    Type: Grant
    Filed: September 27, 2021
    Date of Patent: May 28, 2024
    Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SA
    Inventors: Alexis Gauthier, Pascal Chevalier
  • Publication number: 20240162328
    Abstract: A bipolar transistor is manufactured by: forming a collector region; forming a first layer made of a material of a base region and an insulating second layer; forming a cavity reaching the collector region; forming a portion of the collector region and a portion of the base region in the cavity; forming an insulating fourth layer made of a same material as the insulating second layer in the periphery of the bottom of the cavity, the insulating fourth layer having a same thickness as the insulating second layer; forming an emitter region; and simultaneously removing the insulating second and a portion of the insulating fourth layer not covered by the emitter region.
    Type: Application
    Filed: November 7, 2023
    Publication date: May 16, 2024
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Alexis GAUTHIER, Pascal CHEVALIER, Edoardo BREZZA, Nicolas GUITARD, Gregory AVENIER
  • Publication number: 20240162329
    Abstract: An electronic device includes an insulating first layer covering a second layer made of a doped semiconductor material. A cavity is formed to cross through the first layer and reach the second layer. Insulating spacers are forming against lateral walls of the cavity. A first doped semiconductor region fills the cavity. The first doped semiconductor region has a doping concentration decreasing from the second layer.
    Type: Application
    Filed: November 6, 2023
    Publication date: May 16, 2024
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Alexis GAUTHIER, Pascal CHEVALIER, Edoardo BREZZA, Nicolas GUITARD
  • Patent number: 11984360
    Abstract: A circuit includes at least one bipolar transistor and at least one variable capacitance diode. The circuit is fabricated using a method whereby the bipolar transistor and variable capacitance diode are jointly produced on a common substrate.
    Type: Grant
    Filed: April 25, 2022
    Date of Patent: May 14, 2024
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Gregory Avenier, Alexis Gauthier, Pascal Chevalier
  • Publication number: 20240063290
    Abstract: A bipolar transistor includes a collector. The collector is formed by: a first portion of the collector which extends under an insulating trench, and a second portion of the collector which crosses through the insulating trench. The first and second portions of the collector are in physical contact.
    Type: Application
    Filed: October 26, 2023
    Publication date: February 22, 2024
    Applicants: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SA
    Inventors: Alexis GAUTHIER, Pascal CHEVALIER
  • Patent number: 11837647
    Abstract: A bipolar transistor includes a collector. The collector is formed by: a first portion of the collector which extends under an insulating trench, and a second portion of the collector which crosses through the insulating trench. The first and second portions of the collector are in physical contact.
    Type: Grant
    Filed: March 3, 2022
    Date of Patent: December 5, 2023
    Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SA
    Inventors: Alexis Gauthier, Pascal Chevalier
  • Publication number: 20230387208
    Abstract: A lateral bipolar transistor includes an emitter region doped with a first conductivity type, having a first width and a first average doping concentration; a collector region doped with the first conductivity type, having a second width greater than the first width of the emitter region and a second average doping concentration lower than the first average doping concentration ; and a base region positioned between the emitter and collector regions. The emitter, collector and base regions are arranged in a silicon layer on an insulator layer on a substrate. A substrate region that is deprived of the silicon and insulator layers is positioned on a side of the collector region. A bias circuit is coupled, and configured to deliver, to the substrate region a bias voltage. This bias voltage is controlled to modulate an electrostatic doping of the collector region.
    Type: Application
    Filed: May 16, 2023
    Publication date: November 30, 2023
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Pascal CHEVALIER, Sebastien FREGONESE, Thomas ZIMMER
  • Patent number: 11817353
    Abstract: At least one bipolar transistor and at least one variable capacitance diode are jointly produced by a method on a common substrate.
    Type: Grant
    Filed: January 4, 2022
    Date of Patent: November 14, 2023
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Pascal Chevalier, Alexis Gauthier, Gregory Avenier
  • Patent number: 11804521
    Abstract: A device including a transistor is fabricated by forming a first part of a first region of the transistor through the implantation of dopants through a first opening. The second region of the transistor is then formed in the first opening by epitaxy.
    Type: Grant
    Filed: January 26, 2022
    Date of Patent: October 31, 2023
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Alexis Gauthier, Pascal Chevalier, Gregory Avenier
  • Patent number: 11776995
    Abstract: A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.
    Type: Grant
    Filed: May 2, 2022
    Date of Patent: October 3, 2023
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Alexis Gauthier, Pascal Chevalier, Gregory Avenier
  • Patent number: 11710776
    Abstract: A bipolar transistor includes a stack of an emitter, a base, and a collector. The base is structured to have a comb shape including fingers oriented in a plane orthogonal to a stacking direction of the stack.
    Type: Grant
    Filed: August 13, 2021
    Date of Patent: July 25, 2023
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Alexis Gauthier, Edoardo Brezza, Pascal Chevalier
  • Patent number: 11417756
    Abstract: A method of making a bipolar transistor includes forming a stack of a first, second, third and fourth insulating layers on a substrate. An opening is formed in the stack to reach the substrate. An epitaxial process forms the collector of the transistor on the substrate and selectively etches an annular opening in the third layer. The intrinsic part of the base is then formed by epitaxy on the collector, with the intrinsic part being separated from the third layer by the annular opening. The junction between the collector and the intrinsic part of the base is surrounded by the second layer. The emitter is formed on the intrinsic part and the third layer is removed. A selective deposition of a semiconductor layer on the second layer and in direct contact with the intrinsic part forms the extrinsic part of the base.
    Type: Grant
    Filed: February 15, 2021
    Date of Patent: August 16, 2022
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Edoardo Brezza, Alexis Gauthier, Fabien Deprat, Pascal Chevalier
  • Publication number: 20220254686
    Abstract: A circuit includes at least one bipolar transistor and at least one variable capacitance diode. The circuit is fabricated using a method whereby the bipolar transistor and variable capacitance diode are jointly produced on a common substrate.
    Type: Application
    Filed: April 25, 2022
    Publication date: August 11, 2022
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Gregory AVENIER, Alexis GAUTHIER, Pascal CHEVALIER
  • Publication number: 20220254879
    Abstract: A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.
    Type: Application
    Filed: May 2, 2022
    Publication date: August 11, 2022
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Alexis GAUTHIER, Pascal CHEVALIER, Gregory AVENIER